AU2003242472A1 - Magnetron plasma processing apparatus - Google Patents

Magnetron plasma processing apparatus

Info

Publication number
AU2003242472A1
AU2003242472A1 AU2003242472A AU2003242472A AU2003242472A1 AU 2003242472 A1 AU2003242472 A1 AU 2003242472A1 AU 2003242472 A AU2003242472 A AU 2003242472A AU 2003242472 A AU2003242472 A AU 2003242472A AU 2003242472 A1 AU2003242472 A1 AU 2003242472A1
Authority
AU
Australia
Prior art keywords
processing apparatus
plasma processing
magnetron plasma
magnetron
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003242472A
Inventor
Daisuke Hayashi
Hidenori Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2003242472A1 publication Critical patent/AU2003242472A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
AU2003242472A 2002-06-21 2003-06-19 Magnetron plasma processing apparatus Abandoned AU2003242472A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-182009 2002-06-21
JP2002182009A JP4236873B2 (en) 2002-06-21 2002-06-21 Magnetron plasma processing equipment
PCT/JP2003/007802 WO2004001831A1 (en) 2002-06-21 2003-06-19 Magnetron plasma processing apparatus

Publications (1)

Publication Number Publication Date
AU2003242472A1 true AU2003242472A1 (en) 2004-01-06

Family

ID=29996637

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003242472A Abandoned AU2003242472A1 (en) 2002-06-21 2003-06-19 Magnetron plasma processing apparatus

Country Status (5)

Country Link
JP (1) JP4236873B2 (en)
CN (1) CN100378923C (en)
AU (1) AU2003242472A1 (en)
TW (1) TW200402794A (en)
WO (1) WO2004001831A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8236105B2 (en) * 2004-04-08 2012-08-07 Applied Materials, Inc. Apparatus for controlling gas flow in a semiconductor substrate processing chamber
JP6284825B2 (en) * 2014-05-19 2018-02-28 東京エレクトロン株式会社 Plasma processing equipment
CN105097406B (en) * 2015-06-11 2017-06-09 京东方科技集团股份有限公司 Smoothing apparatus, smoothing method, thin film transistor (TFT), display base plate and display device
JP6573498B2 (en) * 2015-07-22 2019-09-11 東京エレクトロン株式会社 Plasma processing equipment
CN110729161A (en) * 2019-10-21 2020-01-24 上海华虹宏力半导体制造有限公司 Plasma etching device
JP7365892B2 (en) * 2019-12-19 2023-10-20 東京エレクトロン株式会社 Baffle members and substrate processing equipment

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4842683A (en) * 1986-12-19 1989-06-27 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
ES2058132T3 (en) * 1986-12-19 1994-11-01 Applied Materials Inc REACTOR FOR PLASMA ATTACK INTENSIFIED BY A MAGNETIC FIELD.
US6051100A (en) * 1997-10-24 2000-04-18 International Business Machines Corporation High conductance plasma containment structure
JP3375302B2 (en) * 1998-07-29 2003-02-10 東京エレクトロン株式会社 Magnetron plasma processing apparatus and processing method

Also Published As

Publication number Publication date
CN1663029A (en) 2005-08-31
CN100378923C (en) 2008-04-02
TW200402794A (en) 2004-02-16
WO2004001831A1 (en) 2003-12-31
TWI337761B (en) 2011-02-21
JP2004031447A (en) 2004-01-29
JP4236873B2 (en) 2009-03-11

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase