KR100738990B1 - 플라즈마 알에프 소스의 계측을 위한 다중속도 처리시스템 및 방법 - Google Patents

플라즈마 알에프 소스의 계측을 위한 다중속도 처리시스템 및 방법 Download PDF

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KR100738990B1
KR100738990B1 KR1020047016541A KR20047016541A KR100738990B1 KR 100738990 B1 KR100738990 B1 KR 100738990B1 KR 1020047016541 A KR1020047016541 A KR 1020047016541A KR 20047016541 A KR20047016541 A KR 20047016541A KR 100738990 B1 KR100738990 B1 KR 100738990B1
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signal
digital
frequency
power
analog
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KR20050039751A (ko
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데이비드 제이 코우무
미셸 엘 키르크
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이엔아이 테크놀로지, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H17/00—Networks using digital techniques
    • H03H17/02—Frequency selective networks
    • H03H17/06—Non-recursive filters
    • H03H17/0621—Non-recursive filters with input-sampling frequency and output-delivery frequency which differ, e.g. extrapolation; Anti-aliasing
    • H03H17/0635—Non-recursive filters with input-sampling frequency and output-delivery frequency which differ, e.g. extrapolation; Anti-aliasing characterized by the ratio between the input-sampling and output-delivery frequencies
    • H03H17/0671—Cascaded integrator-comb [CIC] filters
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020047016541A 2002-07-10 2003-04-14 플라즈마 알에프 소스의 계측을 위한 다중속도 처리시스템 및 방법 Expired - Lifetime KR100738990B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/192,196 2002-07-10
US10/192,196 US6707255B2 (en) 2002-07-10 2002-07-10 Multirate processing for metrology of plasma RF source
PCT/US2003/011266 WO2004008502A2 (en) 2002-07-10 2003-04-14 Multirate processing for metrology of plasma rf source

Publications (2)

Publication Number Publication Date
KR20050039751A KR20050039751A (ko) 2005-04-29
KR100738990B1 true KR100738990B1 (ko) 2007-07-13

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Country Link
US (1) US6707255B2 (enExample)
EP (1) EP1520288B1 (enExample)
JP (2) JP2005532668A (enExample)
KR (1) KR100738990B1 (enExample)
CN (1) CN100339943C (enExample)
AU (1) AU2003224937A1 (enExample)
WO (1) WO2004008502A2 (enExample)

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US7477711B2 (en) * 2005-05-19 2009-01-13 Mks Instruments, Inc. Synchronous undersampling for high-frequency voltage and current measurements
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US7822565B2 (en) * 2007-12-31 2010-10-26 Advanced Energy Industries, Inc. System, method, and apparatus for monitoring characteristics of RF power
US7839223B2 (en) * 2008-03-23 2010-11-23 Advanced Energy Industries, Inc. Method and apparatus for advanced frequency tuning
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US7970562B2 (en) * 2008-05-07 2011-06-28 Advanced Energy Industries, Inc. System, method, and apparatus for monitoring power
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CN102981156A (zh) * 2011-09-06 2013-03-20 中国科学院声学研究所 一种超声成像后处理方法及装置
KR102009541B1 (ko) * 2012-02-23 2019-08-09 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치, 및 고주파 발생기
WO2014016357A2 (en) * 2012-07-25 2014-01-30 Impedans Ltd Analysing rf signals from a plasma system
CN104871430B (zh) 2012-12-18 2018-01-12 通快许廷格两合公司 用于产生高频功率的方法和具有用于给负载供送功率的功率转换器的功率供送系统
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US10821542B2 (en) * 2013-03-15 2020-11-03 Mks Instruments, Inc. Pulse synchronization by monitoring power in another frequency band
CN103731148B (zh) * 2013-12-31 2017-04-26 上海英威腾工业技术有限公司 一种电流采样处理装置及电机驱动器
US9336997B2 (en) * 2014-03-17 2016-05-10 Applied Materials, Inc. RF multi-feed structure to improve plasma uniformity
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US9947514B2 (en) * 2015-09-01 2018-04-17 Mks Instruments, Inc. Plasma RF bias cancellation system
US10044338B2 (en) * 2015-10-15 2018-08-07 Lam Research Corporation Mutually induced filters
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KR101930440B1 (ko) * 2017-01-04 2018-12-18 주식회사 메디플 플라즈마 생성을 위한 전력 공급 장치
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Also Published As

Publication number Publication date
WO2004008502A2 (en) 2004-01-22
CN1647237A (zh) 2005-07-27
AU2003224937A8 (en) 2004-02-02
JP5631628B2 (ja) 2014-11-26
AU2003224937A1 (en) 2004-02-02
CN100339943C (zh) 2007-09-26
WO2004008502A3 (en) 2004-09-10
EP1520288B1 (en) 2018-10-17
JP2010212252A (ja) 2010-09-24
US20040007984A1 (en) 2004-01-15
EP1520288A2 (en) 2005-04-06
KR20050039751A (ko) 2005-04-29
JP2005532668A (ja) 2005-10-27
US6707255B2 (en) 2004-03-16

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