CN100339943C - 用于等离子体rf源的度量的多速率处理 - Google Patents

用于等离子体rf源的度量的多速率处理 Download PDF

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Publication number
CN100339943C
CN100339943C CNB038080818A CN03808081A CN100339943C CN 100339943 C CN100339943 C CN 100339943C CN B038080818 A CNB038080818 A CN B038080818A CN 03808081 A CN03808081 A CN 03808081A CN 100339943 C CN100339943 C CN 100339943C
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China
Prior art keywords
signal
digital
frequency
power
analog
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Expired - Lifetime
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CNB038080818A
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Chinese (zh)
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CN1647237A (zh
Inventor
戴维·J·库穆
迈克尔·L·柯克
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MKS Instruments Inc
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ENI TECHNOLOGY Co
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Publication of CN1647237A publication Critical patent/CN1647237A/zh
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H17/00—Networks using digital techniques
    • H03H17/02—Frequency selective networks
    • H03H17/06—Non-recursive filters
    • H03H17/0621—Non-recursive filters with input-sampling frequency and output-delivery frequency which differ, e.g. extrapolation; Anti-aliasing
    • H03H17/0635—Non-recursive filters with input-sampling frequency and output-delivery frequency which differ, e.g. extrapolation; Anti-aliasing characterized by the ratio between the input-sampling and output-delivery frequencies
    • H03H17/0671—Cascaded integrator-comb [CIC] filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
CNB038080818A 2002-07-10 2003-04-14 用于等离子体rf源的度量的多速率处理 Expired - Lifetime CN100339943C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/192,196 2002-07-10
US10/192,196 US6707255B2 (en) 2002-07-10 2002-07-10 Multirate processing for metrology of plasma RF source
PCT/US2003/011266 WO2004008502A2 (en) 2002-07-10 2003-04-14 Multirate processing for metrology of plasma rf source

Publications (2)

Publication Number Publication Date
CN1647237A CN1647237A (zh) 2005-07-27
CN100339943C true CN100339943C (zh) 2007-09-26

Family

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Family Applications (1)

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CNB038080818A Expired - Lifetime CN100339943C (zh) 2002-07-10 2003-04-14 用于等离子体rf源的度量的多速率处理

Country Status (7)

Country Link
US (1) US6707255B2 (enExample)
EP (1) EP1520288B1 (enExample)
JP (2) JP2005532668A (enExample)
KR (1) KR100738990B1 (enExample)
CN (1) CN100339943C (enExample)
AU (1) AU2003224937A1 (enExample)
WO (1) WO2004008502A2 (enExample)

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US7477711B2 (en) * 2005-05-19 2009-01-13 Mks Instruments, Inc. Synchronous undersampling for high-frequency voltage and current measurements
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US7196650B1 (en) 2006-01-27 2007-03-27 Analog Devices, Inc. Signal converter systems and methods with enhanced signal-to-noise ratios
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US7408495B2 (en) * 2006-05-15 2008-08-05 Guzik Technical Enterprises Digital equalization of multiple interleaved analog-to-digital converters
US8055203B2 (en) * 2007-03-14 2011-11-08 Mks Instruments, Inc. Multipoint voltage and current probe system
DE102007056468A1 (de) * 2007-11-22 2009-06-04 Hüttinger Elektronik Gmbh + Co. Kg Messsignalverarbeitungseinrichtung und Verfahren zur Verarbeitung von zumindest zwei Messsignalen
US7822565B2 (en) * 2007-12-31 2010-10-26 Advanced Energy Industries, Inc. System, method, and apparatus for monitoring characteristics of RF power
US7839223B2 (en) * 2008-03-23 2010-11-23 Advanced Energy Industries, Inc. Method and apparatus for advanced frequency tuning
US8213885B2 (en) * 2008-04-11 2012-07-03 Nautel Limited Impedance measurement in an active radio frequency transmitter
US7970562B2 (en) * 2008-05-07 2011-06-28 Advanced Energy Industries, Inc. System, method, and apparatus for monitoring power
US8040068B2 (en) 2009-02-05 2011-10-18 Mks Instruments, Inc. Radio frequency power control system
CN102469675A (zh) * 2010-11-05 2012-05-23 北京北方微电子基地设备工艺研究中心有限责任公司 功率匹配装置和半导体设备
CN102981156A (zh) * 2011-09-06 2013-03-20 中国科学院声学研究所 一种超声成像后处理方法及装置
KR102009541B1 (ko) * 2012-02-23 2019-08-09 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치, 및 고주파 발생기
WO2014016357A2 (en) * 2012-07-25 2014-01-30 Impedans Ltd Analysing rf signals from a plasma system
CN104871430B (zh) 2012-12-18 2018-01-12 通快许廷格两合公司 用于产生高频功率的方法和具有用于给负载供送功率的功率转换器的功率供送系统
DE202013012714U1 (de) 2012-12-18 2018-10-15 TRUMPF Hüttinger GmbH + Co. KG Leistungsversorgungssystem mit einem Leistungswandler
US10821542B2 (en) * 2013-03-15 2020-11-03 Mks Instruments, Inc. Pulse synchronization by monitoring power in another frequency band
CN103731148B (zh) * 2013-12-31 2017-04-26 上海英威腾工业技术有限公司 一种电流采样处理装置及电机驱动器
US9336997B2 (en) * 2014-03-17 2016-05-10 Applied Materials, Inc. RF multi-feed structure to improve plasma uniformity
DE102015212242A1 (de) * 2015-06-30 2017-01-05 TRUMPF Hüttinger GmbH + Co. KG Verfahren zum Abtasten eines mit einem Plasmaprozess in Beziehung stehenden Signalgemischs
US9947514B2 (en) * 2015-09-01 2018-04-17 Mks Instruments, Inc. Plasma RF bias cancellation system
US10044338B2 (en) * 2015-10-15 2018-08-07 Lam Research Corporation Mutually induced filters
WO2017105497A1 (en) 2015-12-18 2017-06-22 Olympus Corporation Method and apparatus for accurate and efficient spectrum estimation using improved sliding dft
US9748076B1 (en) 2016-04-20 2017-08-29 Advanced Energy Industries, Inc. Apparatus for frequency tuning in a RF generator
KR101930440B1 (ko) * 2017-01-04 2018-12-18 주식회사 메디플 플라즈마 생성을 위한 전력 공급 장치
US10546724B2 (en) 2017-05-10 2020-01-28 Mks Instruments, Inc. Pulsed, bidirectional radio frequency source/load
US11042140B2 (en) 2018-06-26 2021-06-22 Mks Instruments, Inc. Adaptive control for a power generator
US11901159B2 (en) 2018-09-13 2024-02-13 Hitachi Kokusai Electric Inc. RF generator device and substrate processing apparatus
US10623013B1 (en) * 2018-10-29 2020-04-14 Texas Instruments Incorporated Systems with pairs of voltage level shifter switches to couple voltage level shifters to anti-aliasing filters
US11158488B2 (en) 2019-06-26 2021-10-26 Mks Instruments, Inc. High speed synchronization of plasma source/bias power delivery
US12394604B2 (en) 2020-09-11 2025-08-19 Applied Materials, Inc. Plasma source with floating electrodes
US11776793B2 (en) 2020-11-13 2023-10-03 Applied Materials, Inc. Plasma source with ceramic electrode plate

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EP0412568A2 (en) * 1989-08-11 1991-02-13 Applied Materials, Inc. Matching network and method for using same
EP0727923A1 (en) * 1995-02-15 1996-08-21 Applied Materials, Inc. Modifications in or relating to RF plasma reactors and methods of operation thereof
US5936481A (en) * 1997-09-10 1999-08-10 Adtec Corporation Limited System for impedance matching and power control for apparatus for high frequency plasma treatment
US6046594A (en) * 1997-02-11 2000-04-04 Advanced Energy Voorhees, Inc. Method and apparatus for monitoring parameters of an RF powered load in the presence of harmonics

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EP0412568A2 (en) * 1989-08-11 1991-02-13 Applied Materials, Inc. Matching network and method for using same
EP0727923A1 (en) * 1995-02-15 1996-08-21 Applied Materials, Inc. Modifications in or relating to RF plasma reactors and methods of operation thereof
US6046594A (en) * 1997-02-11 2000-04-04 Advanced Energy Voorhees, Inc. Method and apparatus for monitoring parameters of an RF powered load in the presence of harmonics
US5936481A (en) * 1997-09-10 1999-08-10 Adtec Corporation Limited System for impedance matching and power control for apparatus for high frequency plasma treatment

Also Published As

Publication number Publication date
WO2004008502A2 (en) 2004-01-22
KR100738990B1 (ko) 2007-07-13
CN1647237A (zh) 2005-07-27
AU2003224937A8 (en) 2004-02-02
JP5631628B2 (ja) 2014-11-26
AU2003224937A1 (en) 2004-02-02
WO2004008502A3 (en) 2004-09-10
EP1520288B1 (en) 2018-10-17
JP2010212252A (ja) 2010-09-24
US20040007984A1 (en) 2004-01-15
EP1520288A2 (en) 2005-04-06
KR20050039751A (ko) 2005-04-29
JP2005532668A (ja) 2005-10-27
US6707255B2 (en) 2004-03-16

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Owner name: MKS EQUIPMENT CO.,LTD.

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Effective date: 20090724

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Patentee after: MKS Instruments, Inc.

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Patentee before: ENI TECHNOLOGY, Inc.

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Granted publication date: 20070926

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