AU2002313756A1 - Process for making a mim capacitor - Google Patents

Process for making a mim capacitor

Info

Publication number
AU2002313756A1
AU2002313756A1 AU2002313756A AU2002313756A AU2002313756A1 AU 2002313756 A1 AU2002313756 A1 AU 2002313756A1 AU 2002313756 A AU2002313756 A AU 2002313756A AU 2002313756 A AU2002313756 A AU 2002313756A AU 2002313756 A1 AU2002313756 A1 AU 2002313756A1
Authority
AU
Australia
Prior art keywords
making
mim capacitor
mim
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002313756A
Other languages
English (en)
Inventor
Eric Luckowski
Douglas R. Roberts
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2002313756A1 publication Critical patent/AU2002313756A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/68Capacitors having no potential barriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76816Aspects relating to the layout of the pattern or to the size of vias or trenches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76843Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76883Post-treatment or after-treatment of the conductive material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223Capacitor integral with wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AU2002313756A 2001-08-29 2002-08-13 Process for making a mim capacitor Abandoned AU2002313756A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/942,208 US6461914B1 (en) 2001-08-29 2001-08-29 Process for making a MIM capacitor
US09/942,208 2001-08-29
PCT/US2002/025909 WO2003021661A2 (en) 2001-08-29 2002-08-13 Process for making a mim capacitor

Publications (1)

Publication Number Publication Date
AU2002313756A1 true AU2002313756A1 (en) 2003-03-18

Family

ID=25477722

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002313756A Abandoned AU2002313756A1 (en) 2001-08-29 2002-08-13 Process for making a mim capacitor

Country Status (8)

Country Link
US (1) US6461914B1 (enExample)
EP (1) EP1425793A2 (enExample)
JP (1) JP4414221B2 (enExample)
KR (1) KR20040029106A (enExample)
CN (1) CN1639861A (enExample)
AU (1) AU2002313756A1 (enExample)
TW (1) TW558822B (enExample)
WO (1) WO2003021661A2 (enExample)

Families Citing this family (122)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7192827B2 (en) * 2001-01-05 2007-03-20 Micron Technology, Inc. Methods of forming capacitor structures
KR100359299B1 (en) * 2001-03-26 2002-11-07 Samsung Electronics Co Ltd Semiconductor memory device having resist pattern and method for forming metal contact thereof
KR100400252B1 (ko) * 2001-06-29 2003-10-01 주식회사 하이닉스반도체 탄탈륨 옥사이드 캐퍼시터의 형성 방법
US8026161B2 (en) 2001-08-30 2011-09-27 Micron Technology, Inc. Highly reliable amorphous high-K gate oxide ZrO2
US6717193B2 (en) * 2001-10-09 2004-04-06 Koninklijke Philips Electronics N.V. Metal-insulator-metal (MIM) capacitor structure and methods of fabricating same
US6900122B2 (en) 2001-12-20 2005-05-31 Micron Technology, Inc. Low-temperature grown high-quality ultra-thin praseodymium gate dielectrics
US6809026B2 (en) * 2001-12-21 2004-10-26 Applied Materials, Inc. Selective deposition of a barrier layer on a metal film
US6770565B2 (en) * 2002-01-08 2004-08-03 Applied Materials Inc. System for planarizing metal conductive layers
US6767795B2 (en) 2002-01-17 2004-07-27 Micron Technology, Inc. Highly reliable amorphous high-k gate dielectric ZrOXNY
US6893984B2 (en) * 2002-02-20 2005-05-17 Micron Technology Inc. Evaporated LaA1O3 films for gate dielectrics
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7335552B2 (en) * 2002-05-15 2008-02-26 Raytheon Company Electrode for thin film capacitor devices
US6720608B2 (en) * 2002-05-22 2004-04-13 United Microelectronics Corp. Metal-insulator-metal capacitor structure
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
KR100456829B1 (ko) * 2002-06-17 2004-11-10 삼성전자주식회사 듀얼다마신공정에 적합한 엠아이엠 캐패시터 및 그의제조방법
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
JP2004063807A (ja) * 2002-07-29 2004-02-26 Elpida Memory Inc 半導体装置の製造方法
KR100456697B1 (ko) * 2002-07-30 2004-11-10 삼성전자주식회사 반도체 장치의 캐패시터 및 그 제조방법
US20040027783A1 (en) * 2002-08-08 2004-02-12 United Microelectronics Corp. Structure of metal-metal capacitor
US6790791B2 (en) 2002-08-15 2004-09-14 Micron Technology, Inc. Lanthanide doped TiOx dielectric films
US6916722B2 (en) * 2002-12-02 2005-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. Method to fabricate high reliable metal capacitor within copper back-end process
US20040063295A1 (en) * 2002-09-30 2004-04-01 Intel Corporation One-mask process flow for simultaneously constructing a capacitor and a thin film resistor
US7279423B2 (en) * 2002-10-31 2007-10-09 Intel Corporation Forming a copper diffusion barrier
US6709918B1 (en) * 2002-12-02 2004-03-23 Chartered Semiconductor Manufacturing Ltd. Method for making a metal-insulator-metal (MIM) capacitor and metal resistor for a copper back-end-of-line (BEOL) technology
US20040120097A1 (en) * 2002-12-23 2004-06-24 Chambers Stephen T. Methods of forming metal-insulator-metal capacitors
KR100500444B1 (ko) * 2002-12-26 2005-07-12 삼성전자주식회사 금속전극들을 갖는 커패시터 제조방법
KR20040067012A (ko) * 2003-01-21 2004-07-30 주식회사 하이닉스반도체 반도체 소자의 엠아이엠 캐패시터 형성방법
US7192892B2 (en) 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
KR100539198B1 (ko) * 2003-03-10 2005-12-27 삼성전자주식회사 금속-절연체-금속 캐패시터 및 그 제조 방법
US7239000B2 (en) * 2003-04-15 2007-07-03 Honeywell International Inc. Semiconductor device and magneto-resistive sensor integration
US7265543B2 (en) * 2003-04-15 2007-09-04 Honeywell International Inc. Integrated set/reset driver and magneto-resistive sensor
US7206693B2 (en) * 2003-04-15 2007-04-17 Honeywell International Inc. Method and apparatus for an integrated GPS receiver and electronic compassing sensor device
US7183186B2 (en) 2003-04-22 2007-02-27 Micro Technology, Inc. Atomic layer deposited ZrTiO4 films
US6812110B1 (en) * 2003-05-09 2004-11-02 Micron Technology, Inc. Methods of forming capacitor constructions, and methods of forming constructions comprising dielectric materials
KR100471408B1 (ko) * 2003-06-30 2005-03-14 주식회사 하이닉스반도체 반도체 소자의 금속선 패터닝 방법
JP2005093597A (ja) * 2003-09-16 2005-04-07 Shinko Electric Ind Co Ltd 薄膜キャパシタ及びその製造方法
US6933191B2 (en) * 2003-09-18 2005-08-23 International Business Machines Corporation Two-mask process for metal-insulator-metal capacitors and single mask process for thin film resistors
DE10344389A1 (de) 2003-09-25 2005-05-19 Infineon Technologies Ag Verfahren zur Herstellung einer multifunktionellen Dielektrikumschicht auf einem Substrat
KR100548998B1 (ko) * 2003-09-25 2006-02-02 삼성전자주식회사 동일레벨에 퓨즈와 커패시터를 갖는 반도체소자 및 그것을제조하는 방법
US6876028B1 (en) * 2003-09-30 2005-04-05 International Business Machines Corporation Metal-insulator-metal capacitor and method of fabrication
WO2005055178A1 (en) * 2003-12-02 2005-06-16 Semiconductor Energy Laboratory Co., Ltd. Display device, method for manufacturing the same, and television apparatus
KR100573897B1 (ko) * 2003-12-30 2006-04-26 동부일렉트로닉스 주식회사 반도체 제조 방법
KR100564801B1 (ko) * 2003-12-30 2006-03-28 동부아남반도체 주식회사 반도체 제조 방법
KR100538444B1 (ko) * 2003-12-31 2005-12-22 동부아남반도체 주식회사 비아 홀 및 트렌치 형성 방법
US7301752B2 (en) * 2004-06-04 2007-11-27 International Business Machines Corporation Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US7091542B1 (en) * 2005-01-28 2006-08-15 International Business Machines Corporation Method of forming a MIM capacitor for Cu BEOL application
KR100809321B1 (ko) 2005-02-01 2008-03-05 삼성전자주식회사 다중 mim 캐패시터 및 이의 제조 방법
US20060197183A1 (en) * 2005-03-01 2006-09-07 International Business Machines Corporation Improved mim capacitor structure and process
US7223654B2 (en) * 2005-04-15 2007-05-29 International Business Machines Corporation MIM capacitor and method of fabricating same
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
KR100870178B1 (ko) 2005-08-10 2008-11-25 삼성전자주식회사 엠아이엠 커패시터를 구비하는 반도체 소자들 및 그제조방법들
US8110469B2 (en) 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers
US20070080426A1 (en) * 2005-10-11 2007-04-12 Texas Instruments Incorporated Single lithography-step planar metal-insulator-metal capacitor and resistor
US7483258B2 (en) * 2005-12-13 2009-01-27 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor in a copper damascene interconnect
US7420365B2 (en) 2006-03-15 2008-09-02 Honeywell International Inc. Single chip MR sensor integrated with an RF transceiver
US7439127B2 (en) * 2006-04-20 2008-10-21 Advanced Micro Devices, Inc. Method for fabricating a semiconductor component including a high capacitance per unit area capacitor
WO2008010028A1 (en) * 2006-06-15 2008-01-24 Freescale Semiconductor, Inc. Mim capacitor integration
US7582549B2 (en) 2006-08-25 2009-09-01 Micron Technology, Inc. Atomic layer deposited barium strontium titanium oxide films
JP2008171886A (ja) * 2007-01-09 2008-07-24 Rohm Co Ltd 半導体装置およびその製造方法
US20080174015A1 (en) * 2007-01-23 2008-07-24 Russell Thomas Herrin Removal of etching process residual in semiconductor fabrication
JP5334199B2 (ja) 2008-01-22 2013-11-06 ルネサスエレクトロニクス株式会社 容量素子を有する半導体装置
TW200947670A (en) * 2008-05-13 2009-11-16 Nanya Technology Corp Method for fabricating a semiconductor capacitor device
KR101090932B1 (ko) * 2008-12-24 2011-12-08 매그나칩 반도체 유한회사 캐패시터 및 그의 제조방법
US8298902B2 (en) * 2009-03-18 2012-10-30 International Business Machines Corporation Interconnect structures, methods for fabricating interconnect structures, and design structures for a radiofrequency integrated circuit
US20110012229A1 (en) * 2009-07-14 2011-01-20 United Microelectronics Corp. Semiconductor device with capacitor and method of fabricating the same
DE102009035438B4 (de) * 2009-07-31 2013-02-07 Globalfoundries Dresden Module One Llc & Co. Kg Verwendung von Dielektrika mit großem ε als sehr selektive Ätzstoppmaterialien in Halbleiterbauelementen, sowie Halbleiterbauelemente
CN101989621B (zh) * 2009-08-06 2012-03-07 中芯国际集成电路制造(上海)有限公司 Mim电容器及其制造方法
US8363379B2 (en) * 2010-08-18 2013-01-29 International Business Machines Corporation Altering capacitance of MIM capacitor having reactive layer therein
US8405135B2 (en) 2010-10-05 2013-03-26 International Business Machines Corporation 3D via capacitor with a floating conductive plate for improved reliability
CN102420104B (zh) * 2011-06-07 2013-12-04 上海华力微电子有限公司 一种mim(金属-绝缘层-金属)电容制作方法
US8692608B2 (en) 2011-09-19 2014-04-08 United Microelectronics Corp. Charge pump system capable of stabilizing an output voltage
US9030221B2 (en) 2011-09-20 2015-05-12 United Microelectronics Corporation Circuit structure of test-key and test method thereof
US8395455B1 (en) 2011-10-14 2013-03-12 United Microelectronics Corp. Ring oscillator
US8421509B1 (en) 2011-10-25 2013-04-16 United Microelectronics Corp. Charge pump circuit with low clock feed-through
US8588020B2 (en) 2011-11-16 2013-11-19 United Microelectronics Corporation Sense amplifier and method for determining values of voltages on bit-line pair
US8493806B1 (en) 2012-01-03 2013-07-23 United Microelectronics Corporation Sense-amplifier circuit of memory and calibrating method thereof
US9142607B2 (en) 2012-02-23 2015-09-22 Freescale Semiconductor, Inc. Metal-insulator-metal capacitor
CN102637660A (zh) * 2012-04-24 2012-08-15 上海宏力半导体制造有限公司 集成无源器件、mim电容、极板及极板的形成方法
US8970197B2 (en) 2012-08-03 2015-03-03 United Microelectronics Corporation Voltage regulating circuit configured to have output voltage thereof modulated digitally
US8724404B2 (en) 2012-10-15 2014-05-13 United Microelectronics Corp. Memory, supply voltage generation circuit, and operation method of a supply voltage generation circuit used for a memory array
US8669897B1 (en) 2012-11-05 2014-03-11 United Microelectronics Corp. Asynchronous successive approximation register analog-to-digital converter and operating method thereof
US8711598B1 (en) 2012-11-21 2014-04-29 United Microelectronics Corp. Memory cell and memory cell array using the same
US8873295B2 (en) 2012-11-27 2014-10-28 United Microelectronics Corporation Memory and operation method thereof
US8643521B1 (en) 2012-11-28 2014-02-04 United Microelectronics Corp. Digital-to-analog converter with greater output resistance
US9030886B2 (en) 2012-12-07 2015-05-12 United Microelectronics Corp. Memory device and driving method thereof
US8953401B2 (en) 2012-12-07 2015-02-10 United Microelectronics Corp. Memory device and method for driving memory array thereof
US8906773B2 (en) * 2012-12-12 2014-12-09 Freescale Semiconductor, Inc. Integrated circuits including integrated passive devices and methods of manufacture thereof
US8809149B2 (en) 2012-12-12 2014-08-19 Globalfoundries Inc. High density serial capacitor device and methods of making such a capacitor device
US8917109B2 (en) 2013-04-03 2014-12-23 United Microelectronics Corporation Method and device for pulse width estimation
CN103311181B (zh) * 2013-06-03 2016-02-03 上海华力微电子有限公司 改善金属层-绝缘介质层-金属层失配参数的方法
US9105355B2 (en) 2013-07-04 2015-08-11 United Microelectronics Corporation Memory cell array operated with multiple operation voltage
US8901711B1 (en) 2013-08-07 2014-12-02 International Business Machines Corporation Horizontal metal-insulator-metal capacitor
US8947911B1 (en) 2013-11-07 2015-02-03 United Microelectronics Corp. Method and circuit for optimizing bit line power consumption
US8866536B1 (en) 2013-11-14 2014-10-21 United Microelectronics Corp. Process monitoring circuit and method
US9143143B2 (en) 2014-01-13 2015-09-22 United Microelectronics Corp. VCO restart up circuit and method thereof
US9548266B2 (en) 2014-08-27 2017-01-17 Nxp Usa, Inc. Semiconductor package with embedded capacitor and methods of manufacturing same
US9349787B1 (en) 2014-12-10 2016-05-24 GlobalFoundries, Inc. Integrated circuits with capacitors and methods of producing the same
US9373680B1 (en) 2015-02-02 2016-06-21 Globalfoundries Inc. Integrated circuits with capacitors and methods of producing the same
US9640608B1 (en) 2016-02-25 2017-05-02 Globalfoundries Inc. Serial capacitor device with middle electrode contact and methods of making same
US10090240B2 (en) 2016-06-03 2018-10-02 Globalfoundries Inc. Interconnect structure with capacitor element and related methods
US9875959B2 (en) 2016-06-09 2018-01-23 International Business Machines Corporation Forming a stacked capacitor
US10032711B2 (en) 2016-07-25 2018-07-24 International Business Machines Corporation Integrating metal-insulator-metal capacitors with air gap process flow
US9893144B1 (en) 2016-08-05 2018-02-13 International Business Machines Corporation Methods for fabricating metal-insulator-metal capacitors
US9704856B1 (en) 2016-09-23 2017-07-11 International Business Machines Corporation On-chip MIM capacitor
US9698213B1 (en) 2016-09-28 2017-07-04 International Business Machines Corporation Vertical MIM capacitor
US9876068B1 (en) 2016-10-31 2018-01-23 International Business Machines Corporation High-K metal-insulator-metal capacitor and method of manufacturing the same
US20180138263A1 (en) * 2016-11-14 2018-05-17 United Microelectronics Corp. Semiconductor structure and method for forming the same
US10032855B1 (en) 2017-01-05 2018-07-24 International Business Machines Corporation Advanced metal insulator metal capacitor
US10008558B1 (en) 2017-01-05 2018-06-26 International Business Machines Corporation Advanced metal insulator metal capacitor
US10090378B1 (en) 2017-03-17 2018-10-02 International Business Machines Corporation Efficient metal-insulator-metal capacitor
DE102018107387B4 (de) 2017-09-28 2022-08-25 Taiwan Semiconductor Manufacturing Co. Ltd. Metall-isolator-metall-kondensatorstruktur mit hoher kapazität und verfahren zu deren herstellung
US10658455B2 (en) 2017-09-28 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Metal insulator metal capacitor structure having high capacitance
US10748986B2 (en) * 2017-11-21 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with capacitors
US11031457B2 (en) 2017-12-15 2021-06-08 International Business Machines Corporation Low resistance high capacitance density MIM capacitor
CN109037445A (zh) * 2018-08-01 2018-12-18 德淮半导体有限公司 Mim电容器及其制造方法
US10497519B1 (en) 2018-09-27 2019-12-03 International Business Machines Corporation Back-end-of-the line capacitor
CN112447663B (zh) * 2019-09-03 2024-06-21 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN112086441A (zh) * 2020-08-26 2020-12-15 中国电子科技集团公司第十三研究所 无源器件制备方法及无源器件
JP7585728B2 (ja) 2020-11-16 2024-11-19 株式会社村田製作所 受動部品
CN114864486A (zh) * 2022-04-21 2022-08-05 绍兴中芯集成电路制造股份有限公司 半导体结构的制备方法、半导体结构和数字隔离器

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5561082A (en) * 1992-07-31 1996-10-01 Kabushiki Kaisha Toshiba Method for forming an electrode and/or wiring layer by reducing copper oxide or silver oxide
JP3326698B2 (ja) * 1993-03-19 2002-09-24 富士通株式会社 集積回路装置の製造方法
US5708559A (en) * 1995-10-27 1998-01-13 International Business Machines Corporation Precision analog metal-metal capacitor
JP3304754B2 (ja) * 1996-04-11 2002-07-22 三菱電機株式会社 集積回路の多段埋め込み配線構造
EP0862203A1 (en) 1997-01-31 1998-09-02 Texas Instruments Incorporated Method for fabricating a semiconductor memory capacitor
US6130102A (en) * 1997-11-03 2000-10-10 Motorola Inc. Method for forming semiconductor device including a dual inlaid structure
US6025226A (en) * 1998-01-15 2000-02-15 International Business Machines Corporation Method of forming a capacitor and a capacitor formed using the method
US6090661A (en) * 1998-03-19 2000-07-18 Lsi Logic Corporation Formation of novel DRAM cell capacitors by integration of capacitors with isolation trench sidewalls
US6107136A (en) * 1998-08-17 2000-08-22 Motorola Inc. Method for forming a capacitor structure
US6255217B1 (en) * 1999-01-04 2001-07-03 International Business Machines Corporation Plasma treatment to enhance inorganic dielectric adhesion to copper
JP2000260963A (ja) * 1999-03-12 2000-09-22 Toshiba Corp 半導体装置およびその製造方法
JP2000349255A (ja) * 1999-06-03 2000-12-15 Oki Electric Ind Co Ltd 半導体記憶装置およびその製造方法
EP1081746A2 (en) * 1999-08-31 2001-03-07 Lucent Technologies Inc. Metal-oxide-metal structure having a Cu/TaN/Ta2O5 stacked structure incorporated therein
TW432689B (en) 1999-10-18 2001-05-01 Taiwan Semiconductor Mfg Fabricating method of stacked capacitor
US6114243A (en) * 1999-11-15 2000-09-05 Chartered Semiconductor Manufacturing Ltd Method to avoid copper contamination on the sidewall of a via or a dual damascene structure
US6498364B1 (en) * 2000-01-21 2002-12-24 Agere Systems Inc. Capacitor for integration with copper damascene processes
US6368953B1 (en) * 2000-05-09 2002-04-09 International Business Machines Corporation Encapsulated metal structures for semiconductor devices and MIM capacitors including the same
US6329234B1 (en) * 2000-07-24 2001-12-11 Taiwan Semiconductor Manufactuirng Company Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flow
US6313003B1 (en) * 2000-08-17 2001-11-06 Taiwan Semiconductor Manufacturing Company Fabrication process for metal-insulator-metal capacitor with low gate resistance
US6537912B1 (en) * 2000-08-25 2003-03-25 Micron Technology Inc. Method of forming an encapsulated conductive pillar
JP3895126B2 (ja) * 2001-04-23 2007-03-22 株式会社東芝 半導体装置の製造方法

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JP2005526378A (ja) 2005-09-02
EP1425793A2 (en) 2004-06-09
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WO2003021661A3 (en) 2003-07-24
WO2003021661A2 (en) 2003-03-13

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