ATE555876T1 - Halbleiter-wafer-herstellungsverfahren - Google Patents
Halbleiter-wafer-herstellungsverfahrenInfo
- Publication number
- ATE555876T1 ATE555876T1 AT08833192T AT08833192T ATE555876T1 AT E555876 T1 ATE555876 T1 AT E555876T1 AT 08833192 T AT08833192 T AT 08833192T AT 08833192 T AT08833192 T AT 08833192T AT E555876 T1 ATE555876 T1 AT E555876T1
- Authority
- AT
- Austria
- Prior art keywords
- semiconductor wafer
- carrier
- production process
- polishing
- wafer production
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007247743A JP5301802B2 (ja) | 2007-09-25 | 2007-09-25 | 半導体ウェハの製造方法 |
PCT/JP2008/066412 WO2009041277A1 (ja) | 2007-09-25 | 2008-09-11 | 半導体ウェハの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE555876T1 true ATE555876T1 (de) | 2012-05-15 |
Family
ID=40511166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT08833192T ATE555876T1 (de) | 2007-09-25 | 2008-09-11 | Halbleiter-wafer-herstellungsverfahren |
Country Status (6)
Country | Link |
---|---|
US (1) | US8545712B2 (de) |
EP (1) | EP2194568B1 (de) |
JP (1) | JP5301802B2 (de) |
AT (1) | ATE555876T1 (de) |
TW (1) | TWI440080B (de) |
WO (1) | WO2009041277A1 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8952496B2 (en) | 2009-12-24 | 2015-02-10 | Sumco Corporation | Semiconductor wafer and method of producing same |
JP5423384B2 (ja) | 2009-12-24 | 2014-02-19 | 株式会社Sumco | 半導体ウェーハおよびその製造方法 |
US9393669B2 (en) | 2011-10-21 | 2016-07-19 | Strasbaugh | Systems and methods of processing substrates |
US8968052B2 (en) | 2011-10-21 | 2015-03-03 | Strasbaugh | Systems and methods of wafer grinding |
WO2013106777A1 (en) * | 2012-01-11 | 2013-07-18 | Strasbaugh | Systems and methods of processing substrates |
US8860040B2 (en) | 2012-09-11 | 2014-10-14 | Dow Corning Corporation | High voltage power semiconductor devices on SiC |
US9457446B2 (en) | 2012-10-01 | 2016-10-04 | Strasbaugh | Methods and systems for use in grind shape control adaptation |
US9610669B2 (en) | 2012-10-01 | 2017-04-04 | Strasbaugh | Methods and systems for use in grind spindle alignment |
US9018639B2 (en) * | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
US9427841B2 (en) | 2013-03-15 | 2016-08-30 | Ii-Vi Incorporated | Double-sided polishing of hard substrate materials |
US8896964B1 (en) | 2013-05-16 | 2014-11-25 | Seagate Technology Llc | Enlarged substrate for magnetic recording medium |
US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
JP6593318B2 (ja) * | 2016-12-20 | 2019-10-23 | 株式会社Sumco | キャリアプレートの厚み調整方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3929484A1 (de) * | 1989-09-05 | 1991-03-14 | Wacker Chemitronic | Verfahren zum zweiseitigen chemomechanischen polieren von halbleiterscheiben, sowie vorrichtung zu seiner durchfuehrung und dadurch erhaeltliche halbleiterscheiben |
JPH03228568A (ja) * | 1990-01-29 | 1991-10-09 | Shin Etsu Chem Co Ltd | 極薄ウェーハの製造方法 |
JPH10329032A (ja) * | 1997-05-29 | 1998-12-15 | Sumitomo Osaka Cement Co Ltd | Lsi酸化膜研磨用砥石およびlsi酸化膜研磨方法 |
JPH11254305A (ja) * | 1998-03-12 | 1999-09-21 | Shin Etsu Handotai Co Ltd | ウエーハの両面研磨方法と該研磨方法に用いるウエーハキャリア |
DE19905737C2 (de) | 1999-02-11 | 2000-12-14 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Halbleiterscheibe mit verbesserter Ebenheit |
US20020004358A1 (en) * | 2000-03-17 | 2002-01-10 | Krishna Vepa | Cluster tool systems and methods to eliminate wafer waviness during grinding |
CN1203530C (zh) * | 2000-04-24 | 2005-05-25 | 三菱住友硅晶株式会社 | 半导体晶片的制造方法 |
JP2001328063A (ja) * | 2000-05-22 | 2001-11-27 | Toshiba Ceramics Co Ltd | 研磨装置及びその装置を用いた研磨方法 |
DE10132504C1 (de) | 2001-07-05 | 2002-10-10 | Wacker Siltronic Halbleitermat | Verfahren zur beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben und seine Verwendung |
JP2005288558A (ja) * | 2004-03-31 | 2005-10-20 | Shin Etsu Chem Co Ltd | 被処理物の平面研磨加工方法 |
JP4301102B2 (ja) * | 2004-07-22 | 2009-07-22 | ソニー株式会社 | 音声処理装置および音声処理方法、プログラム、並びに記録媒体 |
WO2006013996A1 (en) * | 2004-08-02 | 2006-02-09 | Showa Denko K.K. | Method of manufacturing polishing carrier and silicon substrate for magnetic recording medium, and silicon substrate for magnetic recording medium |
JP2006068895A (ja) * | 2004-08-02 | 2006-03-16 | Showa Denko Kk | 研磨用キャリア及び磁気記録媒体用シリコン基板の製造方法並びに磁気記録媒体用シリコン基板 |
JP4641395B2 (ja) * | 2004-08-17 | 2011-03-02 | Okiセミコンダクタ株式会社 | 半導体装置の研削方法、及び研削装置 |
JP2006205265A (ja) * | 2005-01-25 | 2006-08-10 | Speedfam Co Ltd | 研磨方法および研磨用組成物 |
JP2006303136A (ja) * | 2005-04-20 | 2006-11-02 | Shin Etsu Handotai Co Ltd | 両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法 |
DE102005045339B4 (de) * | 2005-09-22 | 2009-04-02 | Siltronic Ag | Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben |
US7601049B2 (en) * | 2006-01-30 | 2009-10-13 | Memc Electronic Materials, Inc. | Double side wafer grinder and methods for assessing workpiece nanotopology |
-
2007
- 2007-09-25 JP JP2007247743A patent/JP5301802B2/ja active Active
-
2008
- 2008-07-18 TW TW097127323A patent/TWI440080B/zh active
- 2008-09-11 AT AT08833192T patent/ATE555876T1/de active
- 2008-09-11 WO PCT/JP2008/066412 patent/WO2009041277A1/ja active Application Filing
- 2008-09-11 EP EP08833192A patent/EP2194568B1/de active Active
- 2008-09-11 US US12/679,731 patent/US8545712B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP5301802B2 (ja) | 2013-09-25 |
EP2194568B1 (de) | 2012-05-02 |
EP2194568A1 (de) | 2010-06-09 |
US20100285665A1 (en) | 2010-11-11 |
WO2009041277A1 (ja) | 2009-04-02 |
EP2194568A4 (de) | 2011-01-05 |
TWI440080B (zh) | 2014-06-01 |
US8545712B2 (en) | 2013-10-01 |
TW200915410A (en) | 2009-04-01 |
JP2009081186A (ja) | 2009-04-16 |
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