WO2009041277A1 - 半導体ウェハの製造方法 - Google Patents

半導体ウェハの製造方法 Download PDF

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Publication number
WO2009041277A1
WO2009041277A1 PCT/JP2008/066412 JP2008066412W WO2009041277A1 WO 2009041277 A1 WO2009041277 A1 WO 2009041277A1 JP 2008066412 W JP2008066412 W JP 2008066412W WO 2009041277 A1 WO2009041277 A1 WO 2009041277A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor wafer
carrier
wafer manufacturing
polished
polishing
Prior art date
Application number
PCT/JP2008/066412
Other languages
English (en)
French (fr)
Inventor
Hiroshi Takai
Kenji Satomura
Yuichi Nakayoshi
Katsutoshi Yamamoto
Kouji Mizowaki
Original Assignee
Sumco Techxiv Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Techxiv Corporation filed Critical Sumco Techxiv Corporation
Priority to EP08833192A priority Critical patent/EP2194568B1/en
Priority to US12/679,731 priority patent/US8545712B2/en
Priority to AT08833192T priority patent/ATE555876T1/de
Publication of WO2009041277A1 publication Critical patent/WO2009041277A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　半導体ウェハ（Ｓ）を収納するキャリア（５０）と、このキャリア（５０）を挟む上定盤（１０）及び下定盤（２０）とを備えた両面研磨機（１）により、半導体ウェハ（Ｓ）の表裏面を同時に研磨加工する半導体ウェハの製造方法は、半導体ウェハ（Ｓ）の厚さ寸法を、キャリア（５０）の厚さ寸法よりも０μm以上５μm以下の範囲で大きくしてキャリア（５０）に収納し、半導体ウェハ（Ｓ）の面及び定盤（１０、２０）の面の間に研磨スラリを供給して研磨を行う研磨工程を含み、研磨工程では、半導体ウェハの取代を、両面で５μm以下とする。
PCT/JP2008/066412 2007-09-25 2008-09-11 半導体ウェハの製造方法 WO2009041277A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08833192A EP2194568B1 (en) 2007-09-25 2008-09-11 Semiconductor wafer manufacturing method
US12/679,731 US8545712B2 (en) 2007-09-25 2008-09-11 Semiconductor wafer manufacturing method
AT08833192T ATE555876T1 (de) 2007-09-25 2008-09-11 Halbleiter-wafer-herstellungsverfahren

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-247743 2007-09-25
JP2007247743A JP5301802B2 (ja) 2007-09-25 2007-09-25 半導体ウェハの製造方法

Publications (1)

Publication Number Publication Date
WO2009041277A1 true WO2009041277A1 (ja) 2009-04-02

Family

ID=40511166

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066412 WO2009041277A1 (ja) 2007-09-25 2008-09-11 半導体ウェハの製造方法

Country Status (6)

Country Link
US (1) US8545712B2 (ja)
EP (1) EP2194568B1 (ja)
JP (1) JP5301802B2 (ja)
AT (1) ATE555876T1 (ja)
TW (1) TWI440080B (ja)
WO (1) WO2009041277A1 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8952496B2 (en) 2009-12-24 2015-02-10 Sumco Corporation Semiconductor wafer and method of producing same
JP5423384B2 (ja) 2009-12-24 2014-02-19 株式会社Ｓｕｍｃｏ 半導体ウェーハおよびその製造方法
US9393669B2 (en) 2011-10-21 2016-07-19 Strasbaugh Systems and methods of processing substrates
TW201323149A (zh) 2011-10-21 2013-06-16 Strasbaugh 晶圓研磨之系統與方法
WO2013106777A1 (en) * 2012-01-11 2013-07-18 Strasbaugh Systems and methods of processing substrates
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9610669B2 (en) 2012-10-01 2017-04-04 Strasbaugh Methods and systems for use in grind spindle alignment
US9457446B2 (en) 2012-10-01 2016-10-04 Strasbaugh Methods and systems for use in grind shape control adaptation
US9018639B2 (en) * 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9427841B2 (en) 2013-03-15 2016-08-30 Ii-Vi Incorporated Double-sided polishing of hard substrate materials
US8896964B1 (en) 2013-05-16 2014-11-25 Seagate Technology Llc Enlarged substrate for magnetic recording medium
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP6593318B2 (ja) * 2016-12-20 2019-10-23 株式会社Ｓｕｍｃｏ キャリアプレートの厚み調整方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001328063A (ja) * 2000-05-22 2001-11-27 Toshiba Ceramics Co Ltd 研磨装置及びその装置を用いた研磨方法
JP2006068895A (ja) 2004-08-02 2006-03-16 Showa Denko Kk 研磨用キャリア及び磁気記録媒体用シリコン基板の製造方法並びに磁気記録媒体用シリコン基板
JP2006205265A (ja) * 2005-01-25 2006-08-10 Speedfam Co Ltd 研磨方法および研磨用組成物
JP2006303136A (ja) * 2005-04-20 2006-11-02 Shin Etsu Handotai Co Ltd 両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3929484A1 (de) * 1989-09-05 1991-03-14 Wacker Chemitronic Verfahren zum zweiseitigen chemomechanischen polieren von halbleiterscheiben, sowie vorrichtung zu seiner durchfuehrung und dadurch erhaeltliche halbleiterscheiben
JPH03228568A (ja) * 1990-01-29 1991-10-09 Shin Etsu Chem Co Ltd 極薄ウェーハの製造方法
JPH10329032A (ja) * 1997-05-29 1998-12-15 Sumitomo Osaka Cement Co Ltd Ｌｓｉ酸化膜研磨用砥石およびｌｓｉ酸化膜研磨方法
JPH11254305A (ja) * 1998-03-12 1999-09-21 Shin Etsu Handotai Co Ltd ウエーハの両面研磨方法と該研磨方法に用いるウエーハキャリア
DE19905737C2 (de) * 1999-02-11 2000-12-14 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe mit verbesserter Ebenheit
US20010024877A1 (en) * 2000-03-17 2001-09-27 Krishna Vepa Cluster tool systems and methods for processing wafers
DE10196115B4 (de) * 2000-04-24 2011-06-16 Sumitomo Mitsubishi Silicon Corp. Verfahren zum Polieren eines Halbleiterwafers
DE10132504C1 (de) 2001-07-05 2002-10-10 Wacker Siltronic Halbleitermat Verfahren zur beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben und seine Verwendung
JP2005288558A (ja) * 2004-03-31 2005-10-20 Shin Etsu Chem Co Ltd 被処理物の平面研磨加工方法
JP4301102B2 (ja) * 2004-07-22 2009-07-22 ソニー株式会社 音声処理装置および音声処理方法、プログラム、並びに記録媒体
US20080318493A1 (en) 2004-08-02 2008-12-25 Showa Denko K.K. Method of Manufacturing Polishing Carrier and Silicon Substrate for Magnetic Recording Medium, and Silicon Substrate for Magnetic Recording Medium
JP4641395B2 (ja) * 2004-08-17 2011-03-02 Ｏｋｉセミコンダクタ株式会社 半導体装置の研削方法、及び研削装置
DE102005045339B4 (de) * 2005-09-22 2009-04-02 Siltronic Ag Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben
US7601049B2 (en) * 2006-01-30 2009-10-13 Memc Electronic Materials, Inc. Double side wafer grinder and methods for assessing workpiece nanotopology

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001328063A (ja) * 2000-05-22 2001-11-27 Toshiba Ceramics Co Ltd 研磨装置及びその装置を用いた研磨方法
JP2006068895A (ja) 2004-08-02 2006-03-16 Showa Denko Kk 研磨用キャリア及び磁気記録媒体用シリコン基板の製造方法並びに磁気記録媒体用シリコン基板
JP2006205265A (ja) * 2005-01-25 2006-08-10 Speedfam Co Ltd 研磨方法および研磨用組成物
JP2006303136A (ja) * 2005-04-20 2006-11-02 Shin Etsu Handotai Co Ltd 両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法

Also Published As

Publication number Publication date
TWI440080B (zh) 2014-06-01
JP5301802B2 (ja) 2013-09-25
EP2194568A4 (en) 2011-01-05
JP2009081186A (ja) 2009-04-16
ATE555876T1 (de) 2012-05-15
EP2194568A1 (en) 2010-06-09
US20100285665A1 (en) 2010-11-11
US8545712B2 (en) 2013-10-01
TW200915410A (en) 2009-04-01
EP2194568B1 (en) 2012-05-02

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