WO2010062818A3 - Two-line mixing of chemical and abrasive particles with endpoint control for chemical mechanical polishing - Google Patents

Two-line mixing of chemical and abrasive particles with endpoint control for chemical mechanical polishing Download PDF

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Publication number
WO2010062818A3
WO2010062818A3 PCT/US2009/065017 US2009065017W WO2010062818A3 WO 2010062818 A3 WO2010062818 A3 WO 2010062818A3 US 2009065017 W US2009065017 W US 2009065017W WO 2010062818 A3 WO2010062818 A3 WO 2010062818A3
Authority
WO
WIPO (PCT)
Prior art keywords
chemical
mechanical polishing
abrasive particles
substrate
processing components
Prior art date
Application number
PCT/US2009/065017
Other languages
French (fr)
Other versions
WO2010062818A2 (en
Inventor
Yuchun Wang
Long Cheng
Kuo-Lih Chang
Wei-Yung Hsu
Wen-Chiang Tu
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to JP2011537589A priority Critical patent/JP2012510161A/en
Publication of WO2010062818A2 publication Critical patent/WO2010062818A2/en
Publication of WO2010062818A3 publication Critical patent/WO2010062818A3/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

Embodiments described herein provide a method for polishing a substrate surface. The methods generally include storing processing components in multiple storage units during processing, and combining the processing components to create a slurry while flowing the processing components to a polishing pad. A substrate is polished using the slurry, and the thickness of a material layer disposed on the substrate is determined. The flow rate of one or more processing components is then adjusted to affect the rate of removal of the material layer disposed on the substrate.
PCT/US2009/065017 2008-11-26 2009-11-18 Two-line mixing of chemical and abrasive particles with endpoint control for chemical mechanical polishing WO2010062818A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011537589A JP2012510161A (en) 2008-11-26 2009-11-18 Two-line mixing of chemical and abrasive particles with end point control for chemical mechanical polishing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11813408P 2008-11-26 2008-11-26
US61/118,134 2008-11-26

Publications (2)

Publication Number Publication Date
WO2010062818A2 WO2010062818A2 (en) 2010-06-03
WO2010062818A3 true WO2010062818A3 (en) 2010-08-12

Family

ID=42196755

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/065017 WO2010062818A2 (en) 2008-11-26 2009-11-18 Two-line mixing of chemical and abrasive particles with endpoint control for chemical mechanical polishing

Country Status (5)

Country Link
US (1) US20100130101A1 (en)
JP (1) JP2012510161A (en)
KR (1) KR20110102378A (en)
TW (1) TW201027612A (en)
WO (1) WO2010062818A2 (en)

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US8916473B2 (en) * 2009-12-14 2014-12-23 Air Products And Chemicals, Inc. Method for forming through-base wafer vias for fabrication of stacked devices
TW201206630A (en) * 2010-06-30 2012-02-16 Applied Materials Inc Endpoint control during chemical mechanical polishing by detecting interface between different layers through selectivity change
US20120034844A1 (en) * 2010-08-05 2012-02-09 Applied Materials, Inc. Spectrographic monitoring using index tracking after detection of layer clearing
US9023667B2 (en) 2011-04-27 2015-05-05 Applied Materials, Inc. High sensitivity eddy current monitoring system
KR20130090209A (en) 2012-02-03 2013-08-13 삼성전자주식회사 Apparatus and method for treating substrate
CN103894918A (en) * 2012-12-28 2014-07-02 安集微电子(上海)有限公司 Chemical mechanical polishing method
US9770804B2 (en) 2013-03-18 2017-09-26 Versum Materials Us, Llc Slurry supply and/or chemical blend supply apparatuses, processes, methods of use and methods of manufacture
US9227294B2 (en) * 2013-12-31 2016-01-05 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and method for chemical mechanical polishing
US10226852B2 (en) * 2013-12-31 2019-03-12 Nova Measuring Instruments Ltd. Surface planarization system and method
WO2017115377A1 (en) 2015-12-31 2017-07-06 Nova Measuring Instruments Ltd. Method and system for processing patterned structures
US10875149B2 (en) * 2017-03-30 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for timed dispensing various slurry components
KR102428923B1 (en) 2020-01-22 2022-08-04 주식회사 씨티에스 CMP apparatus
US11794302B2 (en) 2020-12-15 2023-10-24 Applied Materials, Inc. Compensation for slurry composition in in-situ electromagnetic inductive monitoring

Citations (4)

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US20030008599A1 (en) * 2001-07-09 2003-01-09 Motorola, Inc. Method for chemical mechanical polishing (CMP) with altering the concentration of oxidizing agent in slurry
JP2007220710A (en) * 2006-02-14 2007-08-30 Nikon Corp Method of detecting polishing end point in cmp apparatus
JP2007234969A (en) * 2006-03-02 2007-09-13 Tokyo Seimitsu Co Ltd Abrasive preparing device and preparing method of cmp polishing device
US20070233306A1 (en) * 2006-03-31 2007-10-04 Elpida Memory, Inc. Polishing apparatus and method of controlling the same

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US5643060A (en) * 1993-08-25 1997-07-01 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including heater
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US5664990A (en) * 1996-07-29 1997-09-09 Integrated Process Equipment Corp. Slurry recycling in CMP apparatus
JP3382138B2 (en) * 1997-08-21 2003-03-04 富士通株式会社 Chemical liquid supply device and chemical liquid supply method
JP3667113B2 (en) * 1998-10-06 2005-07-06 株式会社ルネサステクノロジ Manufacturing method of semiconductor device
US6409936B1 (en) * 1999-02-16 2002-06-25 Micron Technology, Inc. Composition and method of formation and use therefor in chemical-mechanical polishing
IL151862A0 (en) * 2000-04-07 2003-04-10 Cabot Microelectronics Corp Integrated chemical-mechanical polishing
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US7392818B2 (en) * 2006-07-21 2008-07-01 Taiwan Semiconductor Manufacturing Co., Ltd. Slurry dispensing system
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US20080242089A1 (en) * 2007-03-30 2008-10-02 Texas Instruments Incorporated Method for Distributed Processing at Copper CMP
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Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US20030008599A1 (en) * 2001-07-09 2003-01-09 Motorola, Inc. Method for chemical mechanical polishing (CMP) with altering the concentration of oxidizing agent in slurry
JP2007220710A (en) * 2006-02-14 2007-08-30 Nikon Corp Method of detecting polishing end point in cmp apparatus
JP2007234969A (en) * 2006-03-02 2007-09-13 Tokyo Seimitsu Co Ltd Abrasive preparing device and preparing method of cmp polishing device
US20070233306A1 (en) * 2006-03-31 2007-10-04 Elpida Memory, Inc. Polishing apparatus and method of controlling the same

Also Published As

Publication number Publication date
JP2012510161A (en) 2012-04-26
KR20110102378A (en) 2011-09-16
WO2010062818A2 (en) 2010-06-03
TW201027612A (en) 2010-07-16
US20100130101A1 (en) 2010-05-27

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