ATE555423T1 - Zusammensetzung und verfahren zum entfernen von ätzresten - Google Patents
Zusammensetzung und verfahren zum entfernen von ätzrestenInfo
- Publication number
- ATE555423T1 ATE555423T1 AT03754886T AT03754886T ATE555423T1 AT E555423 T1 ATE555423 T1 AT E555423T1 AT 03754886 T AT03754886 T AT 03754886T AT 03754886 T AT03754886 T AT 03754886T AT E555423 T1 ATE555423 T1 AT E555423T1
- Authority
- AT
- Austria
- Prior art keywords
- composition
- weight
- removal
- etch residue
- dimethylacetamide
- Prior art date
Links
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 abstract 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 abstract 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 abstract 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 abstract 1
- 239000004372 Polyvinyl alcohol Substances 0.000 abstract 1
- -1 alkylene glycol ether Chemical compound 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229940116333 ethyl lactate Drugs 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 239000003112 inhibitor Substances 0.000 abstract 1
- LZCLXQDLBQLTDK-UHFFFAOYSA-N lactic acid ethyl ester Natural products CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229920002451 polyvinyl alcohol Polymers 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Detergent Compositions (AREA)
- Weting (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/254,785 US7166419B2 (en) | 2002-09-26 | 2002-09-26 | Compositions substrate for removing etching residue and use thereof |
PCT/US2003/030237 WO2004030038A2 (en) | 2002-09-26 | 2003-09-26 | Compositions substrate for removing etching residue and use thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE555423T1 true ATE555423T1 (de) | 2012-05-15 |
Family
ID=32029051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03754886T ATE555423T1 (de) | 2002-09-26 | 2003-09-26 | Zusammensetzung und verfahren zum entfernen von ätzresten |
Country Status (8)
Country | Link |
---|---|
US (3) | US7166419B2 (de) |
EP (2) | EP2107420A1 (de) |
JP (3) | JP5431630B2 (de) |
KR (2) | KR101107433B1 (de) |
CN (1) | CN100367114C (de) |
AT (1) | ATE555423T1 (de) |
AU (1) | AU2003272688A1 (de) |
WO (1) | WO2004030038A2 (de) |
Families Citing this family (50)
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US7166419B2 (en) * | 2002-09-26 | 2007-01-23 | Air Products And Chemicals, Inc. | Compositions substrate for removing etching residue and use thereof |
TW200428512A (en) * | 2003-05-02 | 2004-12-16 | Ekc Technology Inc | Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing |
JP4626978B2 (ja) * | 2004-03-03 | 2011-02-09 | ダイセル化学工業株式会社 | リソグラフィー用洗浄剤及びリンス液 |
JP4390616B2 (ja) | 2004-04-27 | 2009-12-24 | Necエレクトロニクス株式会社 | 洗浄液及び半導体装置の製造方法 |
US20060003910A1 (en) * | 2004-06-15 | 2006-01-05 | Hsu Jiun Y | Composition and method comprising same for removing residue from a substrate |
US8030263B2 (en) * | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
US9217929B2 (en) * | 2004-07-22 | 2015-12-22 | Air Products And Chemicals, Inc. | Composition for removing photoresist and/or etching residue from a substrate and use thereof |
US20060116313A1 (en) * | 2004-11-30 | 2006-06-01 | Denise Geitz | Compositions comprising tannic acid as corrosion inhibitor |
US7867779B2 (en) | 2005-02-03 | 2011-01-11 | Air Products And Chemicals, Inc. | System and method comprising same for measurement and/or analysis of particles in gas stream |
US20060183055A1 (en) * | 2005-02-15 | 2006-08-17 | O'neill Mark L | Method for defining a feature on a substrate |
US8329634B2 (en) * | 2005-06-10 | 2012-12-11 | Bortz Steven H | Water based paint thinner |
US7785413B2 (en) * | 2005-06-10 | 2010-08-31 | Bortz Steven H | Lacquer thinner |
US8337608B2 (en) * | 2005-06-10 | 2012-12-25 | Bortz Steven H | Soy ester based multi-purpose solvent |
TWI339780B (en) * | 2005-07-28 | 2011-04-01 | Rohm & Haas Elect Mat | Stripper |
KR101200938B1 (ko) * | 2005-09-30 | 2012-11-13 | 삼성전자주식회사 | 반도체 장치의 패턴 형성 방법 |
KR20070052943A (ko) * | 2005-11-18 | 2007-05-23 | 주식회사 동진쎄미켐 | 포토레지스트 제거용 씬너 조성물 |
US7858572B2 (en) | 2005-12-26 | 2010-12-28 | Liquid Technology Co., Ltd. | Composition for removing polymer residue of photosensitive etching-resistant layer |
KR100752446B1 (ko) * | 2005-12-26 | 2007-08-24 | 리퀴드테크놀로지(주) | 감광성 내식각막의 잔사제거용 조성물 |
US20070179072A1 (en) * | 2006-01-30 | 2007-08-02 | Rao Madhukar B | Cleaning formulations |
JP2007211203A (ja) * | 2006-02-13 | 2007-08-23 | Three M Innovative Properties Co | フッ素含有化合物を含む洗浄剤組成物及びその使用方法 |
US20070284200A1 (en) * | 2006-06-09 | 2007-12-13 | Federal-Mogul World Wide, Inc. | Brake disc assembly and method of construction |
CN101126053A (zh) * | 2006-08-17 | 2008-02-20 | 安集微电子(上海)有限公司 | 用于半导体工业中等离子刻蚀残留物的清洗液组合物 |
KR100860367B1 (ko) * | 2006-08-21 | 2008-09-25 | 제일모직주식회사 | 금속실리사이드막 대비 실리콘 산화막에 대한 상대적인 식각 선택성이 향상된 식각용액 |
JP5159066B2 (ja) * | 2006-08-24 | 2013-03-06 | ダイキン工業株式会社 | 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法 |
JP4642001B2 (ja) * | 2006-10-24 | 2011-03-02 | 関東化学株式会社 | フォトレジスト残渣及びポリマー残渣除去液組成物 |
US8026201B2 (en) * | 2007-01-03 | 2011-09-27 | Az Electronic Materials Usa Corp. | Stripper for coating layer |
US20090096106A1 (en) * | 2007-10-12 | 2009-04-16 | Air Products And Chemicals, Inc. | Antireflective coatings |
US8987039B2 (en) | 2007-10-12 | 2015-03-24 | Air Products And Chemicals, Inc. | Antireflective coatings for photovoltaic applications |
WO2009064336A1 (en) * | 2007-11-16 | 2009-05-22 | Ekc Technology, Inc. | Compositions for removal of metal hard mask etching residues from a semiconductor substrate |
CN101959977B (zh) * | 2008-02-29 | 2013-12-04 | 安万托特性材料股份有限公司 | 微电子基底清洁组合物 |
US20090229629A1 (en) * | 2008-03-14 | 2009-09-17 | Air Products And Chemicals, Inc. | Stripper For Copper/Low k BEOL Clean |
TW201013338A (en) * | 2008-08-04 | 2010-04-01 | Advanced Tech Materials | Environmentally friendly polymer stripping compositions |
US20100151206A1 (en) | 2008-12-11 | 2010-06-17 | Air Products And Chemicals, Inc. | Method for Removal of Carbon From An Organosilicate Material |
MX2011008789A (es) | 2009-02-25 | 2011-09-29 | Avantor Performance Mat Inc | Composiciones removedoras para limpiar polimero fotosensible implantado ionicamente de obleas de dispositivos semiconductores. |
CA2753399A1 (en) * | 2009-02-25 | 2010-09-02 | Avantor Performance Materials, Inc. | Multipurpose acidic, organic solvent based microelectronic cleaning composition |
US8101561B2 (en) * | 2009-11-17 | 2012-01-24 | Wai Mun Lee | Composition and method for treating semiconductor substrate surface |
WO2011109811A2 (en) * | 2010-03-05 | 2011-09-09 | Alta Devices, Inc. | Substrate clean solution for copper contamination removal |
FR2976290B1 (fr) * | 2011-06-09 | 2014-08-15 | Jerome Daviot | Composition de solutions et conditions d'utilisation permettant le retrait et la dissolution complete de resines photo-lithographiques |
US8900802B2 (en) | 2013-02-23 | 2014-12-02 | International Business Machines Corporation | Positive tone organic solvent developed chemically amplified resist |
US10189712B2 (en) | 2013-03-15 | 2019-01-29 | International Business Machines Corporation | Oxidation of porous, carbon-containing materials using fuel and oxidizing agent |
WO2015152212A1 (ja) * | 2014-03-31 | 2015-10-08 | 富士フイルム株式会社 | 除去液及び除去方法 |
KR102375342B1 (ko) | 2014-05-13 | 2022-03-16 | 바스프 에스이 | Tin 풀-백 및 클리닝 조성물 |
KR102427699B1 (ko) | 2015-04-27 | 2022-08-01 | 삼성전자주식회사 | 포토레지스트 제거용 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
TWI790196B (zh) * | 2015-12-11 | 2023-01-21 | 日商富士軟片股份有限公司 | 洗淨液、基板洗淨方法及半導體元件的製造方法 |
JP6518788B2 (ja) * | 2015-12-11 | 2019-05-22 | 富士フイルム株式会社 | 半導体デバイス用処理液の保管方法、処理液収容体 |
KR101697336B1 (ko) | 2016-03-03 | 2017-01-17 | 주식회사 엘지화학 | 액정 배향막의 제조방법 |
IL274880B2 (en) | 2017-12-08 | 2024-04-01 | Basf Se | Composition and process for selectively burning a layer containing an aluminum compound in the presence of layers of materials with low K, copper and/or cobalt |
US20220220421A1 (en) | 2019-05-23 | 2022-07-14 | Basf Se | Composition and process for electively etching a hard mask and/or an etch-stop layer in the presence of layers of low-k materials, copper, cobalt and/or tungsten |
CN110295011B (zh) * | 2019-07-17 | 2021-06-04 | 中国工程物理研究院机械制造工艺研究所 | 一种用于kdp晶体的抛光液及其制备方法、应用 |
EP4388069A1 (de) * | 2021-09-23 | 2024-06-26 | Versum Materials US, LLC | Formulierung zur entfernung von fotolack- und metallhaltigen rückständen nach dem trockenätzen |
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JP3389166B2 (ja) * | 1999-09-10 | 2003-03-24 | 日本電気株式会社 | レジスト用剥離液組成物 |
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CN1248057C (zh) * | 2001-05-21 | 2006-03-29 | 东进瑟弥侃株式会社 | 抗蚀剂剥离剂组合物 |
US20030022800A1 (en) * | 2001-06-14 | 2003-01-30 | Peters Darryl W. | Aqueous buffered fluoride-containing etch residue removers and cleaners |
JP3403187B2 (ja) | 2001-08-03 | 2003-05-06 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
TWI297102B (en) * | 2001-08-03 | 2008-05-21 | Nec Electronics Corp | Removing composition |
KR100434491B1 (ko) * | 2001-08-17 | 2004-06-05 | 삼성전자주식회사 | 레지스트 또는 식각 부산물 제거용 조성물 및 이를 이용한레지스트 제거 방법 |
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US6677286B1 (en) * | 2002-07-10 | 2004-01-13 | Air Products And Chemicals, Inc. | Compositions for removing etching residue and use thereof |
US7166419B2 (en) * | 2002-09-26 | 2007-01-23 | Air Products And Chemicals, Inc. | Compositions substrate for removing etching residue and use thereof |
-
2002
- 2002-09-26 US US10/254,785 patent/US7166419B2/en not_active Ceased
-
2003
- 2003-09-26 KR KR1020057005163A patent/KR101107433B1/ko active IP Right Grant
- 2003-09-26 EP EP09166509A patent/EP2107420A1/de not_active Withdrawn
- 2003-09-26 AT AT03754886T patent/ATE555423T1/de active
- 2003-09-26 KR KR1020107014200A patent/KR20100082033A/ko not_active Application Discontinuation
- 2003-09-26 EP EP03754886A patent/EP1552342B1/de not_active Expired - Lifetime
- 2003-09-26 CN CNB038232162A patent/CN100367114C/zh not_active Expired - Lifetime
- 2003-09-26 WO PCT/US2003/030237 patent/WO2004030038A2/en active Search and Examination
- 2003-09-26 AU AU2003272688A patent/AU2003272688A1/en not_active Abandoned
- 2003-09-26 JP JP2004539901A patent/JP5431630B2/ja not_active Expired - Lifetime
-
2006
- 2006-05-19 US US11/436,544 patent/US7129029B2/en not_active Expired - Lifetime
-
2009
- 2009-01-22 US US12/321,730 patent/USRE42128E1/en not_active Expired - Lifetime
- 2009-11-16 JP JP2009261187A patent/JP5537126B2/ja not_active Expired - Lifetime
-
2012
- 2012-11-15 JP JP2012251510A patent/JP2013092776A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US7129029B2 (en) | 2006-10-31 |
EP2107420A1 (de) | 2009-10-07 |
USRE42128E1 (en) | 2011-02-08 |
EP1552342B1 (de) | 2012-04-25 |
KR20100082033A (ko) | 2010-07-15 |
WO2004030038A2 (en) | 2004-04-08 |
EP1552342A2 (de) | 2005-07-13 |
JP5431630B2 (ja) | 2014-03-05 |
KR20050062564A (ko) | 2005-06-23 |
AU2003272688A8 (en) | 2004-04-19 |
WO2004030038B1 (en) | 2004-09-02 |
US20040063042A1 (en) | 2004-04-01 |
JP2013092776A (ja) | 2013-05-16 |
AU2003272688A1 (en) | 2004-04-19 |
CN1688930A (zh) | 2005-10-26 |
JP2006501327A (ja) | 2006-01-12 |
JP2010047770A (ja) | 2010-03-04 |
US20060205622A1 (en) | 2006-09-14 |
US7166419B2 (en) | 2007-01-23 |
WO2004030038A3 (en) | 2004-07-08 |
EP1552342A4 (de) | 2006-06-21 |
JP5537126B2 (ja) | 2014-07-02 |
KR101107433B1 (ko) | 2012-01-19 |
CN100367114C (zh) | 2008-02-06 |
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