ATE551719T1 - Verfahren zur herstellung von halbleiterbauelementen mittels laserglühen zur selektiven aktivierung von implantierten dotiersubstanzen - Google Patents

Verfahren zur herstellung von halbleiterbauelementen mittels laserglühen zur selektiven aktivierung von implantierten dotiersubstanzen

Info

Publication number
ATE551719T1
ATE551719T1 AT09178466T AT09178466T ATE551719T1 AT E551719 T1 ATE551719 T1 AT E551719T1 AT 09178466 T AT09178466 T AT 09178466T AT 09178466 T AT09178466 T AT 09178466T AT E551719 T1 ATE551719 T1 AT E551719T1
Authority
AT
Austria
Prior art keywords
conductivity type
dopants
regions
temperature
dopant
Prior art date
Application number
AT09178466T
Other languages
English (en)
Inventor
Jan Vobecky
Munaf Rahimo
Original Assignee
Abb Technology Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Technology Ag filed Critical Abb Technology Ag
Application granted granted Critical
Publication of ATE551719T1 publication Critical patent/ATE551719T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
AT09178466T 2009-12-09 2009-12-09 Verfahren zur herstellung von halbleiterbauelementen mittels laserglühen zur selektiven aktivierung von implantierten dotiersubstanzen ATE551719T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP09178466A EP2360717B1 (de) 2009-12-09 2009-12-09 Verfahren zur Herstellung von Halbleiterbauelementen mittels Laserglühen zur selektiven Aktivierung von implantierten Dotiersubstanzen

Publications (1)

Publication Number Publication Date
ATE551719T1 true ATE551719T1 (de) 2012-04-15

Family

ID=42102468

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09178466T ATE551719T1 (de) 2009-12-09 2009-12-09 Verfahren zur herstellung von halbleiterbauelementen mittels laserglühen zur selektiven aktivierung von implantierten dotiersubstanzen

Country Status (6)

Country Link
US (1) US8501548B2 (de)
EP (1) EP2360717B1 (de)
JP (1) JP5718026B2 (de)
CN (1) CN102097306B (de)
AT (1) ATE551719T1 (de)
ES (1) ES2384428T3 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102420133B (zh) * 2011-09-30 2013-07-24 上海华虹Nec电子有限公司 Igbt器件的制造方法
JP5742711B2 (ja) * 2011-12-28 2015-07-01 株式会社デンソー 半導体装置
FR2985605B1 (fr) * 2012-01-05 2014-10-17 Commissariat Energie Atomique Procede de fabrication de composant microelectronique
GB201200890D0 (en) * 2012-01-19 2012-02-29 Univ Dundee An ion exchange substrate and metalized product and apparatus and method for production thereof
JP5793456B2 (ja) * 2012-03-23 2015-10-14 株式会社東芝 半導体装置およびその製造方法、基板
CN104979283B (zh) * 2014-04-03 2020-06-19 中国科学院微电子研究所 Ti-igbt的制作方法
DE102014105790B4 (de) * 2014-04-24 2019-08-29 Infineon Technologies Dresden Gmbh Halbleitervorrichtung mit elektrostatischer Entladungsschutzstruktur
CN104037208B (zh) * 2014-06-24 2017-09-26 江苏中科君芯科技有限公司 一种双模式绝缘栅晶体管
CN104576368A (zh) * 2014-09-23 2015-04-29 上海华虹宏力半导体制造有限公司 逆导型igbt背面工艺的形成方法
CN104637803B (zh) * 2015-01-30 2018-02-06 上海华虹宏力半导体制造有限公司 改善igbt背面金属化的工艺方法
JP6429168B2 (ja) * 2015-05-29 2018-11-28 新電元工業株式会社 パワー半導体装置及びパワー半導体装置の製造方法
JP2017055046A (ja) * 2015-09-11 2017-03-16 トヨタ自動車株式会社 半導体装置の製造方法
CN108417549B (zh) * 2017-02-09 2021-09-24 株式会社东芝 半导体装置及电气设备
CN109830531A (zh) * 2019-01-15 2019-05-31 上海华虹宏力半导体制造有限公司 Rc-igbt器件及其制造方法
CN109950395B (zh) * 2019-04-17 2020-08-28 河南大学 一种均匀体限制型阻变存储器及其制备方法
CN110808284A (zh) * 2019-11-06 2020-02-18 全球能源互联网研究院有限公司 一种逆导型绝缘栅双极晶体管及其制备方法
CN111415984B (zh) * 2020-04-03 2022-11-25 江苏芯长征微电子集团股份有限公司 逆导型igbt器件的制造方法
CN113224131B (zh) * 2021-04-27 2024-02-06 上海华虹宏力半导体制造有限公司 半导体器件及其制造方法
CN113161426B (zh) * 2021-04-27 2023-08-22 上海华虹宏力半导体制造有限公司 二极管及其制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4590880B2 (ja) * 2003-06-24 2010-12-01 富士電機システムズ株式会社 半導体素子の製造方法
DE102004030268B4 (de) * 2003-06-24 2013-02-21 Fuji Electric Co., Ltd Verfahren zum Herstellen eines Halbleiterelements
JP5283827B2 (ja) * 2006-03-30 2013-09-04 富士通セミコンダクター株式会社 半導体装置の製造方法
DE102008003953A1 (de) * 2007-02-28 2008-09-04 Fuji Electric Device Technology Co. Ltd. Verfahren zur Herstellung eines Halbleiterelements
JP5267036B2 (ja) * 2007-12-05 2013-08-21 株式会社デンソー 半導体装置の製造方法
EP2073271A1 (de) * 2007-12-19 2009-06-24 ABB Technology AG Rückwärtsleitender, bipolarer Transistor mit isoliertem Gate und Herstellungsverfahren dafür
US7842590B2 (en) * 2008-04-28 2010-11-30 Infineon Technologies Austria Ag Method for manufacturing a semiconductor substrate including laser annealing

Also Published As

Publication number Publication date
US8501548B2 (en) 2013-08-06
EP2360717B1 (de) 2012-03-28
JP5718026B2 (ja) 2015-05-13
JP2011124566A (ja) 2011-06-23
ES2384428T3 (es) 2012-07-04
CN102097306A (zh) 2011-06-15
EP2360717A1 (de) 2011-08-24
US20110136300A1 (en) 2011-06-09
CN102097306B (zh) 2015-02-25

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