CN111415984B - 逆导型igbt器件的制造方法 - Google Patents
逆导型igbt器件的制造方法 Download PDFInfo
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- CN111415984B CN111415984B CN202010260320.6A CN202010260320A CN111415984B CN 111415984 B CN111415984 B CN 111415984B CN 202010260320 A CN202010260320 A CN 202010260320A CN 111415984 B CN111415984 B CN 111415984B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 230000004913 activation Effects 0.000 claims abstract description 41
- 150000002500 ions Chemical class 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000012535 impurity Substances 0.000 claims abstract description 20
- 238000000137 annealing Methods 0.000 claims abstract description 19
- 238000002347 injection Methods 0.000 claims abstract description 17
- 239000007924 injection Substances 0.000 claims abstract description 17
- 238000005224 laser annealing Methods 0.000 claims abstract description 12
- 230000003213 activating effect Effects 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims description 21
- 238000005468 ion implantation Methods 0.000 claims description 18
- 238000002513 implantation Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 abstract description 6
- 238000001994 activation Methods 0.000 description 33
- 238000010586 diagram Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202010260320.6A CN111415984B (zh) | 2020-04-03 | 2020-04-03 | 逆导型igbt器件的制造方法 |
Applications Claiming Priority (1)
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CN202010260320.6A CN111415984B (zh) | 2020-04-03 | 2020-04-03 | 逆导型igbt器件的制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN111415984A CN111415984A (zh) | 2020-07-14 |
CN111415984B true CN111415984B (zh) | 2022-11-25 |
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CN202010260320.6A Active CN111415984B (zh) | 2020-04-03 | 2020-04-03 | 逆导型igbt器件的制造方法 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113224131B (zh) * | 2021-04-27 | 2024-02-06 | 上海华虹宏力半导体制造有限公司 | 半导体器件及其制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102097306A (zh) * | 2009-12-09 | 2011-06-15 | Abb技术有限公司 | 使用激光退火选择激活注入掺杂剂的半导体器件制作方法 |
CN104425251A (zh) * | 2013-08-30 | 2015-03-18 | 无锡华润上华半导体有限公司 | 一种反向导通场截止型绝缘栅双极型晶体管的制造方法 |
CN104576368A (zh) * | 2014-09-23 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | 逆导型igbt背面工艺的形成方法 |
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2020
- 2020-04-03 CN CN202010260320.6A patent/CN111415984B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102097306A (zh) * | 2009-12-09 | 2011-06-15 | Abb技术有限公司 | 使用激光退火选择激活注入掺杂剂的半导体器件制作方法 |
CN104425251A (zh) * | 2013-08-30 | 2015-03-18 | 无锡华润上华半导体有限公司 | 一种反向导通场截止型绝缘栅双极型晶体管的制造方法 |
CN104576368A (zh) * | 2014-09-23 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | 逆导型igbt背面工艺的形成方法 |
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Effective date of registration: 20220906 Address after: Room 1106-3, No. 62, Suyuan Avenue, Jiangning Development Zone, Nanjing City, Jiangsu Province, 211100 (Jiangning Development Zone) Applicant after: Jiangsu Chip Long March Microelectronics Group Co.,Ltd. Applicant after: Nanjing Xinchangzheng Technology Co.,Ltd. Address before: 10th Floor, Block A2, Jiulong Lake International Enterprise Headquarters Park, No. 19, Suyuan Avenue, Jiangning District, Nanjing City, Jiangsu Province, 211100 Applicant before: Nanjing Xinchangzheng Technology Co.,Ltd. |
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