ATE547496T1 - Cmp-massen, herstellungsverfahren dafür und ihre verwendung - Google Patents
Cmp-massen, herstellungsverfahren dafür und ihre verwendungInfo
- Publication number
- ATE547496T1 ATE547496T1 AT06823817T AT06823817T ATE547496T1 AT E547496 T1 ATE547496 T1 AT E547496T1 AT 06823817 T AT06823817 T AT 06823817T AT 06823817 T AT06823817 T AT 06823817T AT E547496 T1 ATE547496 T1 AT E547496T1
- Authority
- AT
- Austria
- Prior art keywords
- cmp
- polycrystalline silicon
- silicon surface
- masses
- production process
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 239000002002 slurry Substances 0.000 abstract 3
- 239000004094 surface-active agent Substances 0.000 abstract 3
- 238000005498 polishing Methods 0.000 abstract 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000003002 pH adjusting agent Substances 0.000 abstract 1
- -1 perfluoroalkyl sulfonyl compound Chemical class 0.000 abstract 1
- 125000001453 quaternary ammonium group Chemical group 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
- C01G25/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Geology (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060109195A KR100827594B1 (ko) | 2006-11-07 | 2006-11-07 | 다결정 실리콘 연마용 cmp 슬러리 조성물 및 이의 제조방법 |
PCT/KR2006/005109 WO2008056847A1 (en) | 2006-11-07 | 2006-11-29 | Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE547496T1 true ATE547496T1 (de) | 2012-03-15 |
Family
ID=39364647
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT06823817T ATE547496T1 (de) | 2006-11-07 | 2006-11-29 | Cmp-massen, herstellungsverfahren dafür und ihre verwendung |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP2092034B1 (de) |
JP (1) | JP5101625B2 (de) |
KR (1) | KR100827594B1 (de) |
CN (1) | CN101535441B (de) |
AT (1) | ATE547496T1 (de) |
IL (1) | IL198531A0 (de) |
TW (1) | TWI346694B (de) |
WO (1) | WO2008056847A1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103432959B (zh) * | 2013-09-18 | 2015-01-14 | 华中师范大学 | 含六氟丙烯三聚体基的表面活性剂及其制备方法 |
CN103464049B (zh) * | 2013-09-18 | 2014-12-31 | 华中师范大学 | 全氟己基磺酰氧基苄基阳离子表面活性剂及其制备方法与应用 |
FR3043568B1 (fr) * | 2015-11-13 | 2021-01-29 | Ifp Energies Now | Fluide pour la depollution de moteurs thermiques utilisant des suspensions stables de particules colloidales metalliques et modes de preparation dudit fluide |
CN106486210A (zh) * | 2016-10-17 | 2017-03-08 | 浙江凯盈新材料有限公司 | 一种提高导电浆料丝网印刷线形高宽比的方法 |
KR102421467B1 (ko) * | 2019-03-25 | 2022-07-14 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼 연마 방법 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4710449A (en) | 1986-01-29 | 1987-12-01 | Petrarch Systems, Inc. | High contrast low metal ion positive photoresist developing method using aqueous base solutions with surfactants |
DE4217366A1 (de) * | 1992-05-26 | 1993-12-02 | Bayer Ag | Imide und deren Salze sowie deren Verwendung |
WO2001076819A1 (en) * | 2000-04-07 | 2001-10-18 | Cabot Microelectronics Corporation | Integrated chemical-mechanical polishing |
JP2001303027A (ja) * | 2000-04-26 | 2001-10-31 | Seimi Chem Co Ltd | 研磨用組成物及び研磨方法 |
KR100398141B1 (ko) * | 2000-10-12 | 2003-09-13 | 아남반도체 주식회사 | 화학적 기계적 연마 슬러리 조성물 및 이를 이용한반도체소자의 제조방법 |
KR100396881B1 (ko) * | 2000-10-16 | 2003-09-02 | 삼성전자주식회사 | 웨이퍼 연마에 이용되는 슬러리 및 이를 이용한 화학기계적 연마 방법 |
US6612911B2 (en) * | 2001-01-16 | 2003-09-02 | Cabot Microelectronics Corporation | Alkali metal-containing polishing system and method |
US6555510B2 (en) * | 2001-05-10 | 2003-04-29 | 3M Innovative Properties Company | Bis(perfluoroalkanesulfonyl)imides and their salts as surfactants/additives for applications having extreme environments and methods therefor |
CN101058713B (zh) * | 2001-10-31 | 2011-02-09 | 日立化成工业株式会社 | 研磨液及研磨方法 |
US20030168627A1 (en) * | 2002-02-22 | 2003-09-11 | Singh Rajiv K. | Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers |
JP3984902B2 (ja) * | 2002-10-31 | 2007-10-03 | Jsr株式会社 | ポリシリコン膜又はアモルファスシリコン膜研磨用化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法 |
JP2004266155A (ja) * | 2003-03-03 | 2004-09-24 | Jsr Corp | 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法 |
JP3974127B2 (ja) * | 2003-09-12 | 2007-09-12 | 株式会社東芝 | 半導体装置の製造方法 |
JP2006066874A (ja) * | 2004-07-27 | 2006-03-09 | Asahi Denka Kogyo Kk | Cmp用研磨組成物および研磨方法 |
KR100643628B1 (ko) * | 2005-11-04 | 2006-11-10 | 제일모직주식회사 | 다결정 실리콘 연마용 cmp 슬러리 조성물 및 이의 제조방법 |
-
2006
- 2006-11-07 KR KR1020060109195A patent/KR100827594B1/ko active IP Right Grant
- 2006-11-28 TW TW095143936A patent/TWI346694B/zh active
- 2006-11-29 CN CN2006800563039A patent/CN101535441B/zh active Active
- 2006-11-29 WO PCT/KR2006/005109 patent/WO2008056847A1/en active Application Filing
- 2006-11-29 AT AT06823817T patent/ATE547496T1/de active
- 2006-11-29 JP JP2009535197A patent/JP5101625B2/ja active Active
- 2006-11-29 EP EP06823817A patent/EP2092034B1/de active Active
-
2009
- 2009-05-04 IL IL198531A patent/IL198531A0/en unknown
Also Published As
Publication number | Publication date |
---|---|
CN101535441B (zh) | 2012-07-11 |
CN101535441A (zh) | 2009-09-16 |
KR100827594B1 (ko) | 2008-05-07 |
JP5101625B2 (ja) | 2012-12-19 |
EP2092034A1 (de) | 2009-08-26 |
JP2010509753A (ja) | 2010-03-25 |
IL198531A0 (en) | 2010-02-17 |
EP2092034B1 (de) | 2012-02-29 |
TW200821373A (en) | 2008-05-16 |
TWI346694B (en) | 2011-08-11 |
WO2008056847A1 (en) | 2008-05-15 |
EP2092034A4 (de) | 2010-08-25 |
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