ATE54341T1 - Mikrowellenvorrichtung und verfahren zur herstellung von halbleiterteilen und halbleiterteile nach diesem verfahren. - Google Patents

Mikrowellenvorrichtung und verfahren zur herstellung von halbleiterteilen und halbleiterteile nach diesem verfahren.

Info

Publication number
ATE54341T1
ATE54341T1 AT86104253T AT86104253T ATE54341T1 AT E54341 T1 ATE54341 T1 AT E54341T1 AT 86104253 T AT86104253 T AT 86104253T AT 86104253 T AT86104253 T AT 86104253T AT E54341 T1 ATE54341 T1 AT E54341T1
Authority
AT
Austria
Prior art keywords
members
microwave energy
photoconductive
semiconductor parts
layer
Prior art date
Application number
AT86104253T
Other languages
English (en)
Inventor
Annette G Johncock
Stephen J Hudgens
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of ATE54341T1 publication Critical patent/ATE54341T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Photovoltaic Devices (AREA)
  • Electronic Switches (AREA)
  • Light Receiving Elements (AREA)
  • Control Of High-Frequency Heating Circuits (AREA)
  • Constitution Of High-Frequency Heating (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Conductive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AT86104253T 1985-05-15 1986-03-27 Mikrowellenvorrichtung und verfahren zur herstellung von halbleiterteilen und halbleiterteile nach diesem verfahren. ATE54341T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/734,576 US4619729A (en) 1984-02-14 1985-05-15 Microwave method of making semiconductor members
EP86104253A EP0204907B1 (de) 1985-05-15 1986-03-27 Mikrowellenvorrichtung und Verfahren zur Herstellung von Halbleiterteilen und Halbleiterteile nach diesem Verfahren

Publications (1)

Publication Number Publication Date
ATE54341T1 true ATE54341T1 (de) 1990-07-15

Family

ID=24952243

Family Applications (1)

Application Number Title Priority Date Filing Date
AT86104253T ATE54341T1 (de) 1985-05-15 1986-03-27 Mikrowellenvorrichtung und verfahren zur herstellung von halbleiterteilen und halbleiterteile nach diesem verfahren.

Country Status (12)

Country Link
US (1) US4619729A (de)
EP (1) EP0204907B1 (de)
JP (1) JPH0693431B2 (de)
AT (1) ATE54341T1 (de)
AU (1) AU572395B2 (de)
BR (1) BR8602112A (de)
CA (1) CA1244964A (de)
DE (1) DE3672398D1 (de)
IE (1) IE57299B1 (de)
IN (1) IN166431B (de)
MX (1) MX167077B (de)
ZA (1) ZA862694B (de)

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US5130170A (en) * 1989-06-28 1992-07-14 Canon Kabushiki Kaisha Microwave pcvd method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation
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US5629054A (en) * 1990-11-20 1997-05-13 Canon Kabushiki Kaisha Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
US5314780A (en) 1991-02-28 1994-05-24 Canon Kabushiki Kaisha Method for treating metal substrate for electro-photographic photosensitive member and method for manufacturing electrophotographic photosensitive member
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JP3102721B2 (ja) * 1993-03-23 2000-10-23 キヤノン株式会社 電子写真感光体の製造方法
JP3563789B2 (ja) 1993-12-22 2004-09-08 キヤノン株式会社 電子写真感光体の製造方法及び該製造方法に用いられる治具
JP3630831B2 (ja) * 1995-04-03 2005-03-23 キヤノン株式会社 堆積膜の形成方法
US6096389A (en) * 1995-09-14 2000-08-01 Canon Kabushiki Kaisha Method and apparatus for forming a deposited film using a microwave CVD process
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US6156472A (en) * 1997-11-06 2000-12-05 Canon Kabushiki Kaisha Method of manufacturing electrophotographic photosensitive member
US6406554B1 (en) 1997-12-26 2002-06-18 Canon Kabushiki Kaisha Method and apparatus for producing electrophotographic photosensitive member
JP3890153B2 (ja) * 1997-12-26 2007-03-07 キヤノン株式会社 電子写真感光体の製造方法及び製造装置
JP2000162789A (ja) 1997-12-26 2000-06-16 Canon Inc 基体の洗浄方法および洗浄装置
JP3658257B2 (ja) 1998-12-24 2005-06-08 キヤノン株式会社 洗浄方法及び洗浄装置及び電子写真感光体及び電子写真感光体の製造方法
EP1754691B1 (de) 1999-12-02 2009-02-11 Cardinal CG Company Gegen Anlaufen beständiges durchsichtiges Beschichtungssystem
JP3477148B2 (ja) 1999-12-02 2003-12-10 カーディナル・シージー・カンパニー 耐曇り性透明フィルム積層体
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KR20210120732A (ko) * 2020-03-27 2021-10-07 (주)포인트엔지니어링 양극산화막 구조체 및 이를 포함하는 프로브 헤드 및 이를 포함하는 프로브 카드
KR20210131691A (ko) * 2020-04-24 2021-11-03 (주)포인트엔지니어링 적층형 양극산화막 구조체 및 이를 이용한 프로브 카드의 가이드 플레이트 및 이를 구비하는 프로브 카드

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Also Published As

Publication number Publication date
DE3672398D1 (de) 1990-08-09
CA1244964A (en) 1988-11-15
IE57299B1 (en) 1992-07-15
JPS61283116A (ja) 1986-12-13
JPH0693431B2 (ja) 1994-11-16
EP0204907A2 (de) 1986-12-17
BR8602112A (pt) 1987-01-13
US4619729A (en) 1986-10-28
IN166431B (de) 1990-05-05
EP0204907A3 (en) 1987-08-26
ZA862694B (en) 1986-12-30
MX167077B (es) 1993-03-02
EP0204907B1 (de) 1990-07-04
AU572395B2 (en) 1988-05-05
AU5725786A (en) 1986-11-20
IE860863L (en) 1986-11-15

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