DE3672398D1 - Mikrowellenvorrichtung und verfahren zur herstellung von halbleiterteilen und halbleiterteile nach diesem verfahren. - Google Patents

Mikrowellenvorrichtung und verfahren zur herstellung von halbleiterteilen und halbleiterteile nach diesem verfahren.

Info

Publication number
DE3672398D1
DE3672398D1 DE8686104253T DE3672398T DE3672398D1 DE 3672398 D1 DE3672398 D1 DE 3672398D1 DE 8686104253 T DE8686104253 T DE 8686104253T DE 3672398 T DE3672398 T DE 3672398T DE 3672398 D1 DE3672398 D1 DE 3672398D1
Authority
DE
Germany
Prior art keywords
members
microwave energy
photoconductive
semiconductor parts
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686104253T
Other languages
English (en)
Inventor
Annette G Johncock
Stephen J Hudgens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of DE3672398D1 publication Critical patent/DE3672398D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Electronic Switches (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Constitution Of High-Frequency Heating (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Control Of High-Frequency Heating Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Conductive Materials (AREA)
DE8686104253T 1985-05-15 1986-03-27 Mikrowellenvorrichtung und verfahren zur herstellung von halbleiterteilen und halbleiterteile nach diesem verfahren. Expired - Fee Related DE3672398D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/734,576 US4619729A (en) 1984-02-14 1985-05-15 Microwave method of making semiconductor members

Publications (1)

Publication Number Publication Date
DE3672398D1 true DE3672398D1 (de) 1990-08-09

Family

ID=24952243

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686104253T Expired - Fee Related DE3672398D1 (de) 1985-05-15 1986-03-27 Mikrowellenvorrichtung und verfahren zur herstellung von halbleiterteilen und halbleiterteile nach diesem verfahren.

Country Status (12)

Country Link
US (1) US4619729A (de)
EP (1) EP0204907B1 (de)
JP (1) JPH0693431B2 (de)
AT (1) ATE54341T1 (de)
AU (1) AU572395B2 (de)
BR (1) BR8602112A (de)
CA (1) CA1244964A (de)
DE (1) DE3672398D1 (de)
IE (1) IE57299B1 (de)
IN (1) IN166431B (de)
MX (1) MX167077B (de)
ZA (1) ZA862694B (de)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756924A (en) * 1984-11-05 1988-07-12 Energy Conversion Devices, Inc. Method for the microwave fabrication of boron doped semiconductor materials
US4808555A (en) * 1986-07-10 1989-02-28 Motorola, Inc. Multiple step formation of conductive material layers
JPS63293167A (ja) * 1987-05-26 1988-11-30 Canon Inc マイクロ波プラズマｃｖｄ法による機能性堆積膜形成法
US4891330A (en) * 1987-07-27 1990-01-02 Energy Conversion Devices, Inc. Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements
US5016565A (en) * 1988-09-01 1991-05-21 Canon Kabushiki Kaisha Microwave plasma chemical vapor deposition apparatus for forming functional deposited film with means for stabilizing plasma discharge
US5129359A (en) * 1988-11-15 1992-07-14 Canon Kabushiki Kaisha Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate
US5114770A (en) * 1989-06-28 1992-05-19 Canon Kabushiki Kaisha Method for continuously forming functional deposited films with a large area by a microwave plasma cvd method
US5130170A (en) * 1989-06-28 1992-07-14 Canon Kabushiki Kaisha Microwave pcvd method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation
JP2824808B2 (ja) * 1990-11-16 1998-11-18 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する装置
JP2841243B2 (ja) * 1990-11-19 1998-12-24 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による堆積膜形成装置
US5629054A (en) * 1990-11-20 1997-05-13 Canon Kabushiki Kaisha Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
US5314780A (en) * 1991-02-28 1994-05-24 Canon Kabushiki Kaisha Method for treating metal substrate for electro-photographic photosensitive member and method for manufacturing electrophotographic photosensitive member
US5204272A (en) * 1991-12-13 1993-04-20 United Solar Systems Corporation Semiconductor device and microwave process for its manufacture
US5256576A (en) * 1992-02-14 1993-10-26 United Solar Systems Corporation Method of making pin junction semiconductor device with RF deposited intrinsic buffer layer
JP3102722B2 (ja) * 1993-03-23 2000-10-23 キヤノン株式会社 アモルファスシリコン系電子写真用感光体の製造方法
JP3102721B2 (ja) * 1993-03-23 2000-10-23 キヤノン株式会社 電子写真感光体の製造方法
JP3563789B2 (ja) 1993-12-22 2004-09-08 キヤノン株式会社 電子写真感光体の製造方法及び該製造方法に用いられる治具
JP3630831B2 (ja) * 1995-04-03 2005-03-23 キヤノン株式会社 堆積膜の形成方法
US6096389A (en) * 1995-09-14 2000-08-01 Canon Kabushiki Kaisha Method and apparatus for forming a deposited film using a microwave CVD process
US6316111B1 (en) * 1996-03-01 2001-11-13 Cardinal Cg Company Heat-emperable coated glass article
US6231999B1 (en) * 1996-06-21 2001-05-15 Cardinal Ig Company Heat temperable transparent coated glass article
US6435130B1 (en) 1996-08-22 2002-08-20 Canon Kabushiki Kaisha Plasma CVD apparatus and plasma processing method
FR2764309B1 (fr) * 1997-06-06 1999-08-27 Corning Inc Procede de creation d'une couche de silicium sur une surface
US6156472A (en) * 1997-11-06 2000-12-05 Canon Kabushiki Kaisha Method of manufacturing electrophotographic photosensitive member
US6321759B1 (en) 1997-12-26 2001-11-27 Canon Kabushiki Kaisha Method for cleaning a substrate
US6406554B1 (en) 1997-12-26 2002-06-18 Canon Kabushiki Kaisha Method and apparatus for producing electrophotographic photosensitive member
JP3890153B2 (ja) * 1997-12-26 2007-03-07 キヤノン株式会社 電子写真感光体の製造方法及び製造装置
JP3658257B2 (ja) 1998-12-24 2005-06-08 キヤノン株式会社 洗浄方法及び洗浄装置及び電子写真感光体及び電子写真感光体の製造方法
EP1754691B1 (de) 1999-12-02 2009-02-11 Cardinal CG Company Gegen Anlaufen beständiges durchsichtiges Beschichtungssystem
JP3477148B2 (ja) * 1999-12-02 2003-12-10 カーディナル・シージー・カンパニー 耐曇り性透明フィルム積層体
US6919133B2 (en) 2002-03-01 2005-07-19 Cardinal Cg Company Thin film coating having transparent base layer
EP1748035B1 (de) * 2002-03-01 2010-10-20 Cardinal CG Company Dünnfilmbeschichtung mit einer transparenten Grundierungsschicht
US7557364B2 (en) * 2004-05-25 2009-07-07 Panasonic Corporation Charge neutralizing device
CA2602675C (en) * 2005-03-31 2014-03-11 Cardinal Cg Company Haze-resistant low-emissivity coatings
US20100224264A1 (en) * 2005-06-22 2010-09-09 Advanced Technology Materials, Inc. Apparatus and process for integrated gas blending
CN103170447B (zh) 2005-08-30 2015-02-18 先进科技材料公司 使用替代的氟化含硼前驱体的硼离子注入和用于注入的大氢化硼的形成
US7572511B2 (en) * 2005-10-11 2009-08-11 Cardinal Cg Company High infrared reflection coatings
US7342716B2 (en) * 2005-10-11 2008-03-11 Cardinal Cg Company Multiple cavity low-emissivity coatings
US7339728B2 (en) * 2005-10-11 2008-03-04 Cardinal Cg Company Low-emissivity coatings having high visible transmission and low solar heat gain coefficient
KR20110005683A (ko) 2008-02-11 2011-01-18 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 반도체 가공 시스템에서의 이온 공급원 세정법
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US10040719B2 (en) 2012-01-17 2018-08-07 Cardinal Cg Company Low solar transmittance coatings
US9469566B2 (en) 2015-03-20 2016-10-18 Cardinal Cg Company Nickel-aluminum blocker film low-emissivity coatings
US9745792B2 (en) 2015-03-20 2017-08-29 Cardinal Cg Company Nickel-aluminum blocker film multiple cavity controlled transmission coating
US9752377B2 (en) 2015-03-20 2017-09-05 Cardinal Cg Company Nickel-aluminum blocker film controlled transmission coating
KR20210120732A (ko) * 2020-03-27 2021-10-07 (주)포인트엔지니어링 양극산화막 구조체 및 이를 포함하는 프로브 헤드 및 이를 포함하는 프로브 카드
KR20210131691A (ko) * 2020-04-24 2021-11-03 (주)포인트엔지니어링 적층형 양극산화막 구조체 및 이를 이용한 프로브 카드의 가이드 플레이트 및 이를 구비하는 프로브 카드

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217374A (en) 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4226898A (en) 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4363828A (en) * 1979-12-12 1982-12-14 International Business Machines Corp. Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas
US4464415A (en) * 1980-03-03 1984-08-07 Shunpei Yamazaki Photoelectric conversion semiconductor manufacturing method
JPS574053A (en) * 1980-06-09 1982-01-09 Canon Inc Photoconductive member
US4394425A (en) * 1980-09-12 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(C) barrier layer
US4394426A (en) * 1980-09-25 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(N) barrier layer
JPS5779621A (en) * 1980-11-05 1982-05-18 Mitsubishi Electric Corp Plasma processing device
US4443488A (en) * 1981-10-19 1984-04-17 Spire Corporation Plasma ion deposition process
GB2115570B (en) * 1981-12-28 1985-07-10 Canon Kk Photoconductive member
US4439463A (en) * 1982-02-18 1984-03-27 Atlantic Richfield Company Plasma assisted deposition system
JPH0635323B2 (ja) * 1982-06-25 1994-05-11 株式会社日立製作所 表面処理方法
US4517223A (en) * 1982-09-24 1985-05-14 Sovonics Solar Systems Method of making amorphous semiconductor alloys and devices using microwave energy
US4515107A (en) 1982-11-12 1985-05-07 Sovonics Solar Systems Apparatus for the manufacture of photovoltaic devices
JPS59172716A (ja) * 1983-03-23 1984-09-29 Oki Electric Ind Co Ltd 半導体製造方法
US4533564A (en) * 1983-09-07 1985-08-06 Oki Electric Industry Co., Ltd. Method of manufacturing an electrophotographic photoreceptor
EP0151754B1 (de) * 1984-02-14 1991-12-18 Energy Conversion Devices, Inc. Verfahren zur Herstellung eines fotoleitfähigen Elementes
JPH0652716B2 (ja) * 1984-08-24 1994-07-06 日本電信電話株式会社 半導体結晶性膜製造装置

Also Published As

Publication number Publication date
CA1244964A (en) 1988-11-15
JPH0693431B2 (ja) 1994-11-16
IE57299B1 (en) 1992-07-15
MX167077B (es) 1993-03-02
BR8602112A (pt) 1987-01-13
AU572395B2 (en) 1988-05-05
IN166431B (de) 1990-05-05
EP0204907B1 (de) 1990-07-04
US4619729A (en) 1986-10-28
EP0204907A3 (en) 1987-08-26
ATE54341T1 (de) 1990-07-15
JPS61283116A (ja) 1986-12-13
ZA862694B (en) 1986-12-30
EP0204907A2 (de) 1986-12-17
AU5725786A (en) 1986-11-20
IE860863L (en) 1986-11-15

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee