JPS6490522A - Plasma cvd system - Google Patents

Plasma cvd system

Info

Publication number
JPS6490522A
JPS6490522A JP24882687A JP24882687A JPS6490522A JP S6490522 A JPS6490522 A JP S6490522A JP 24882687 A JP24882687 A JP 24882687A JP 24882687 A JP24882687 A JP 24882687A JP S6490522 A JPS6490522 A JP S6490522A
Authority
JP
Japan
Prior art keywords
plasma
spread
plasma etching
earth shield
earth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24882687A
Other languages
Japanese (ja)
Other versions
JP2554896B2 (en
Inventor
Eiji Togawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62248826A priority Critical patent/JP2554896B2/en
Publication of JPS6490522A publication Critical patent/JPS6490522A/en
Application granted granted Critical
Publication of JP2554896B2 publication Critical patent/JP2554896B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE:To remove deposit which was deposited out of a plasma producing area owing to gas flow through a plasma etching process, by making an earth shield which has controlled the spread of plasma to be at the same potential as that of an electrode which applies a voltage in the plasma etching. CONSTITUTION:In the thin film formation being performed owing to plasma decomposition, an earth shield 9 is connected through both contacts A and C to the earth so that the spread of the plasma is effectively controlled. On the other hand, in plasma etching being performed, the earth shield 9 is connected through both contacts A and B to a power source to be at the same potential as that of an electrode 2, so that the plasma is made to be sufficiently spread. As a result, the deposit which was deposited out of a plasma producing area owing to gas flow is effectively etched away by the plasma etching.
JP62248826A 1987-10-01 1987-10-01 Plasma CVD equipment Expired - Fee Related JP2554896B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62248826A JP2554896B2 (en) 1987-10-01 1987-10-01 Plasma CVD equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62248826A JP2554896B2 (en) 1987-10-01 1987-10-01 Plasma CVD equipment

Publications (2)

Publication Number Publication Date
JPS6490522A true JPS6490522A (en) 1989-04-07
JP2554896B2 JP2554896B2 (en) 1996-11-20

Family

ID=17183997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62248826A Expired - Fee Related JP2554896B2 (en) 1987-10-01 1987-10-01 Plasma CVD equipment

Country Status (1)

Country Link
JP (1) JP2554896B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013080956A (en) * 2006-02-15 2013-05-02 Lam Research Corporation Plasma processing reactor equipped with plural volumes and inductive plasma sources

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62130524A (en) * 1985-12-02 1987-06-12 Hitachi Ltd Plasma processing apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62130524A (en) * 1985-12-02 1987-06-12 Hitachi Ltd Plasma processing apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013080956A (en) * 2006-02-15 2013-05-02 Lam Research Corporation Plasma processing reactor equipped with plural volumes and inductive plasma sources
US8906197B2 (en) 2006-02-15 2014-12-09 Lam Research Corporation Plasma processing chamber having electrodes for cleaning chamber

Also Published As

Publication number Publication date
JP2554896B2 (en) 1996-11-20

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees