ATE532390T1 - Verfahren zur erzeugung von extrem-ultraviolett- strahlung - Google Patents

Verfahren zur erzeugung von extrem-ultraviolett- strahlung

Info

Publication number
ATE532390T1
ATE532390T1 AT03712605T AT03712605T ATE532390T1 AT E532390 T1 ATE532390 T1 AT E532390T1 AT 03712605 T AT03712605 T AT 03712605T AT 03712605 T AT03712605 T AT 03712605T AT E532390 T1 ATE532390 T1 AT E532390T1
Authority
AT
Austria
Prior art keywords
ultraviolet radiation
extreme ultraviolet
generating extreme
basic material
lithium
Prior art date
Application number
AT03712605T
Other languages
English (en)
Inventor
Guenther Hans Derra
Ulrich Niemann
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE532390T1 publication Critical patent/ATE532390T1/de

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001Production of X-ray radiation generated from plasma
    • H05G2/003Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00Gas-discharge or vapour-discharge lamps
    • H01J61/02Details
    • H01J61/12Selection of substances for gas fillings; Specified operating pressure or temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00Gas-discharge or vapour-discharge lamps
    • H01J61/02Details
    • H01J61/24Means for obtaining or maintaining the desired pressure within the vessel
    • H01J61/28Means for producing, introducing, or replenishing gas or vapour during operation of the lamp
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001Production of X-ray radiation generated from plasma
    • H05G2/003Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/005Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state containing a metal as principal radiation generating component
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001Production of X-ray radiation generated from plasma
    • H05G2/008Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Discharge Lamp (AREA)
AT03712605T 2002-04-30 2003-04-22 Verfahren zur erzeugung von extrem-ultraviolett- strahlung ATE532390T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10219173A DE10219173A1 (de) 2002-04-30 2002-04-30 Verfahren zur Erzeugung von Extrem-Ultraviolett-Strahlung
PCT/IB2003/001611 WO2003094581A1 (en) 2002-04-30 2003-04-22 Method of generating extreme ultraviolet radiation

Publications (1)

Publication Number Publication Date
ATE532390T1 true ATE532390T1 (de) 2011-11-15

Family

ID=29264908

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03712605T ATE532390T1 (de) 2002-04-30 2003-04-22 Verfahren zur erzeugung von extrem-ultraviolett- strahlung

Country Status (10)

Country Link
US (1) US7385211B2 (de)
EP (1) EP1502485B1 (de)
JP (1) JP4657709B2 (de)
KR (1) KR101068677B1 (de)
CN (1) CN100342759C (de)
AT (1) ATE532390T1 (de)
AU (1) AU2003216694A1 (de)
DE (1) DE10219173A1 (de)
TW (1) TWI304306B (de)
WO (1) WO2003094581A1 (de)

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US7465946B2 (en) * 2004-03-10 2008-12-16 Cymer, Inc. Alternative fuels for EUV light source
TWI275325B (en) * 2003-03-08 2007-03-01 Cymer Inc Discharge produced plasma EUV light source
JP4337648B2 (ja) * 2004-06-24 2009-09-30 株式会社ニコン Euv光源、euv露光装置、及び半導体デバイスの製造方法
WO2006001459A1 (ja) 2004-06-24 2006-01-05 Nikon Corporation Euv光源、euv露光装置、及び半導体デバイスの製造方法
JP5503108B2 (ja) * 2004-11-29 2014-05-28 コーニンクレッカ フィリップス エヌ ヴェ 約1nmから約30nmの波長範囲の放射線を発生させる方法および機器、ならびにリソグラフィー装置
DE102005007884A1 (de) 2005-02-15 2006-08-24 Xtreme Technologies Gmbh Vorrichtung und Verfahren zur Erzeugung von extrem ultravioletter (EUV-) Strahlung
JP5176037B2 (ja) * 2005-05-30 2013-04-03 国立大学法人大阪大学 極端紫外光源用ターゲット
US7141806B1 (en) * 2005-06-27 2006-11-28 Cymer, Inc. EUV light source collector erosion mitigation
DE102005030304B4 (de) 2005-06-27 2008-06-26 Xtreme Technologies Gmbh Vorrichtung und Verfahren zur Erzeugung von extrem ultravioletter Strahlung
DE102005041567B4 (de) * 2005-08-30 2009-03-05 Xtreme Technologies Gmbh EUV-Strahlungsquelle mit hoher Strahlungsleistung auf Basis einer Gasentladung
JP5574705B2 (ja) * 2006-05-16 2014-08-20 コーニンクレッカ フィリップス エヌ ヴェ Euvランプおよび/または軟x線ランプおよび対応する装置の変換効率を高める方法
US7897948B2 (en) * 2006-09-06 2011-03-01 Koninklijke Philips Electronics N.V. EUV plasma discharge lamp with conveyor belt electrodes
WO2008120171A2 (en) * 2007-04-03 2008-10-09 Koninklijke Philips Electronics N.V. Discharge lamp comprising a low stability halogen donor material
US8493548B2 (en) * 2007-08-06 2013-07-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8519367B2 (en) * 2008-07-07 2013-08-27 Koninklijke Philips N.V. Extreme UV radiation generating device comprising a corrosion-resistant material
EP2161725B1 (de) * 2008-09-04 2015-07-08 ASML Netherlands B.V. Strahlungsquelle und entsprechendes Verfahren
DE102009020776B4 (de) 2009-05-08 2011-07-28 XTREME technologies GmbH, 37077 Anordnung zur kontinuierlichen Erzeugung von flüssigem Zinn als Emittermaterial in EUV-Strahlungsquellen
CN102714911A (zh) * 2010-01-07 2012-10-03 Asml荷兰有限公司 Euv辐射源和光刻设备
KR102306612B1 (ko) 2014-01-31 2021-09-29 램 리써치 코포레이션 진공-통합된 하드마스크 프로세스 및 장치
GB201609447D0 (en) * 2016-05-27 2016-07-13 Hanovia Ltd Mercury-free gas discharge lamp
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
WO2020102085A1 (en) 2018-11-14 2020-05-22 Lam Research Corporation Methods for making hard masks useful in next-generation lithography
KR20210149893A (ko) 2019-04-30 2021-12-09 램 리써치 코포레이션 극자외선 리소그래피 레지스트 개선을 위한 원자 층 에칭 및 선택적인 증착 프로세스
SG11202108851RA (en) 2020-01-15 2021-09-29 Lam Res Corp Underlayer for photoresist adhesion and dose reduction
WO2023135322A1 (en) * 2022-01-17 2023-07-20 Isteq B.V. Target material, high-brightness euv source and method for generating euv radiation

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JPS6366836A (ja) * 1986-09-06 1988-03-25 Yoshiaki Arata 大出力軟x線連続発生方法
JPH02230601A (ja) * 1989-03-03 1990-09-13 Toshiba Corp 高効率真空紫外光源装置
US5499282A (en) * 1994-05-02 1996-03-12 University Of Central Florida Efficient narrow spectral width soft-X-ray discharge sources
US6031241A (en) 1997-03-11 2000-02-29 University Of Central Florida Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications
US5963616A (en) * 1997-03-11 1999-10-05 University Of Central Florida Configurations, materials and wavelengths for EUV lithium plasma discharge lamps
US6586757B2 (en) * 1997-05-12 2003-07-01 Cymer, Inc. Plasma focus light source with active and buffer gas control
US6566668B2 (en) 1997-05-12 2003-05-20 Cymer, Inc. Plasma focus light source with tandem ellipsoidal mirror units
US5763930A (en) * 1997-05-12 1998-06-09 Cymer, Inc. Plasma focus high energy photon source
US6064072A (en) * 1997-05-12 2000-05-16 Cymer, Inc. Plasma focus high energy photon source
US6180952B1 (en) * 1998-04-03 2001-01-30 Advanced Energy Systems, Inc. Holder assembly system and method in an emitted energy system for photolithography
JP2000091096A (ja) * 1998-09-14 2000-03-31 Nikon Corp X線発生装置
DE19922566B4 (de) 1998-12-16 2004-11-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Erzeugung von Ultraviolettstrahlung
JP3317957B2 (ja) * 1999-03-15 2002-08-26 サイマー インコーポレイテッド ブラストシールドを備えるプラズマフォーカス高エネルギフォトン源
US6190835B1 (en) * 1999-05-06 2001-02-20 Advanced Energy Systems, Inc. System and method for providing a lithographic light source for a semiconductor manufacturing process
FR2801113B1 (fr) * 1999-11-15 2003-05-09 Commissariat Energie Atomique Procede d'obtention et source de rayonnement extreme ultra violet, application en lithographie
DE10056623B4 (de) * 1999-11-19 2015-08-20 Panalytical B.V. Röntgenröhre mit einer Seltenerdanode
US7180081B2 (en) 2000-06-09 2007-02-20 Cymer, Inc. Discharge produced plasma EUV light source
JP2002020745A (ja) * 2000-07-13 2002-01-23 Nec Kansai Ltd 弗化物蛍光体及びこれを使用した蛍光ランプ
DE10205189B4 (de) * 2002-02-06 2012-06-28 Xtreme Technologies Gmbh Verfahren zur Erzeugung von extrem ultravioletter Strahlung auf Basis eines strahlungsemittierenden Plasmas
DE10260458B3 (de) * 2002-12-19 2004-07-22 Xtreme Technologies Gmbh Strahlungsquelle mit hoher durchschnittlicher EUV-Strahlungsleistung
WO2004062050A2 (en) * 2003-01-02 2004-07-22 Jmar Research Inc. Method and apparatus for generating a membrane target for laser produced plasma

Also Published As

Publication number Publication date
AU2003216694A1 (en) 2003-11-17
WO2003094581A1 (en) 2003-11-13
KR20040101571A (ko) 2004-12-02
EP1502485A1 (de) 2005-02-02
TWI304306B (en) 2008-12-11
US20050167617A1 (en) 2005-08-04
TW200404483A (en) 2004-03-16
KR101068677B1 (ko) 2011-09-28
US7385211B2 (en) 2008-06-10
DE10219173A1 (de) 2003-11-20
EP1502485B1 (de) 2011-11-02
CN1650676A (zh) 2005-08-03
JP2005524943A (ja) 2005-08-18
JP4657709B2 (ja) 2011-03-23
CN100342759C (zh) 2007-10-10

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