ATE526667T1 - Erkennung eines überprogrammierten speichers - Google Patents

Erkennung eines überprogrammierten speichers

Info

Publication number
ATE526667T1
ATE526667T1 AT04777414T AT04777414T ATE526667T1 AT E526667 T1 ATE526667 T1 AT E526667T1 AT 04777414 T AT04777414 T AT 04777414T AT 04777414 T AT04777414 T AT 04777414T AT E526667 T1 ATE526667 T1 AT E526667T1
Authority
AT
Austria
Prior art keywords
memory
memory cells
programmed
memory detection
threshold voltage
Prior art date
Application number
AT04777414T
Other languages
English (en)
Inventor
Jian Chen
Jeffrey Lutze
Yan Li
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE526667T1 publication Critical patent/ATE526667T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3463—Circuits or methods to detect overprogrammed nonvolatile memory cells, usually during program verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
AT04777414T 2003-07-29 2004-06-30 Erkennung eines überprogrammierten speichers ATE526667T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/629,068 US6917542B2 (en) 2003-07-29 2003-07-29 Detecting over programmed memory
PCT/US2004/021254 WO2005015566A1 (en) 2003-07-29 2004-06-30 Detecting over programmed memory

Publications (1)

Publication Number Publication Date
ATE526667T1 true ATE526667T1 (de) 2011-10-15

Family

ID=34103532

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04777414T ATE526667T1 (de) 2003-07-29 2004-06-30 Erkennung eines überprogrammierten speichers

Country Status (8)

Country Link
US (2) US6917542B2 (de)
EP (1) EP1656676B1 (de)
JP (1) JP4754486B2 (de)
KR (1) KR101049581B1 (de)
CN (1) CN1853239B (de)
AT (1) ATE526667T1 (de)
TW (1) TWI248085B (de)
WO (1) WO2005015566A1 (de)

Families Citing this family (196)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6917542B2 (en) * 2003-07-29 2005-07-12 Sandisk Corporation Detecting over programmed memory
JP4287235B2 (ja) * 2003-10-09 2009-07-01 株式会社東芝 不揮発性半導体記憶装置
US7355237B2 (en) * 2004-02-13 2008-04-08 Sandisk Corporation Shield plate for limiting cross coupling between floating gates
US7023733B2 (en) * 2004-05-05 2006-04-04 Sandisk Corporation Boosting to control programming of non-volatile memory
US7274596B2 (en) * 2004-06-30 2007-09-25 Micron Technology, Inc. Reduction of adjacent floating gate data pattern sensitivity
US7294882B2 (en) * 2004-09-28 2007-11-13 Sandisk Corporation Non-volatile memory with asymmetrical doping profile
US7339834B2 (en) 2005-06-03 2008-03-04 Sandisk Corporation Starting program voltage shift with cycling of non-volatile memory
US7023737B1 (en) 2005-08-01 2006-04-04 Sandisk Corporation System for programming non-volatile memory with self-adjusting maximum program loop
US7230854B2 (en) * 2005-08-01 2007-06-12 Sandisk Corporation Method for programming non-volatile memory with self-adjusting maximum program loop
JP4761910B2 (ja) * 2005-10-05 2011-08-31 株式会社東芝 不揮発性半導体記憶装置及びそれを用いた不揮発性メモリシステム
US7443746B1 (en) 2005-10-18 2008-10-28 Spansion Llc Memory array tester information processing system
US7301817B2 (en) 2005-10-27 2007-11-27 Sandisk Corporation Method for programming of multi-state non-volatile memory using smart verify
US7366022B2 (en) * 2005-10-27 2008-04-29 Sandisk Corporation Apparatus for programming of multi-state non-volatile memory using smart verify
ATE504065T1 (de) 2005-12-06 2011-04-15 Sandisk Corp Minderung der lesestörungen in nicht-flüchtigen speichern
US7355889B2 (en) * 2005-12-19 2008-04-08 Sandisk Corporation Method for programming non-volatile memory with reduced program disturb using modified pass voltages
US7355888B2 (en) * 2005-12-19 2008-04-08 Sandisk Corporation Apparatus for programming non-volatile memory with reduced program disturb using modified pass voltages
US7365018B2 (en) * 2005-12-28 2008-04-29 Sandisk Corporation Fabrication of semiconductor device for flash memory with increased select gate width
US7391650B2 (en) * 2006-06-16 2008-06-24 Sandisk Corporation Method for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
US7342831B2 (en) * 2006-06-16 2008-03-11 Sandisk Corporation System for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates
US7349261B2 (en) * 2006-06-19 2008-03-25 Sandisk Corporation Method for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
US7492633B2 (en) * 2006-06-19 2009-02-17 Sandisk Corporation System for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
US7486561B2 (en) 2006-06-22 2009-02-03 Sandisk Corporation Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
US7489549B2 (en) * 2006-06-22 2009-02-10 Sandisk Corporation System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
US20070297247A1 (en) * 2006-06-26 2007-12-27 Gerrit Jan Hemink Method for programming non-volatile memory using variable amplitude programming pulses
US7440326B2 (en) 2006-09-06 2008-10-21 Sandisk Corporation Programming non-volatile memory with improved boosting
US7977186B2 (en) * 2006-09-28 2011-07-12 Sandisk Corporation Providing local boosting control implant for non-volatile memory
US7705387B2 (en) * 2006-09-28 2010-04-27 Sandisk Corporation Non-volatile memory with local boosting control implant
US7691710B2 (en) * 2006-10-17 2010-04-06 Sandisk Corporation Fabricating non-volatile memory with dual voltage select gate structure
US7616490B2 (en) * 2006-10-17 2009-11-10 Sandisk Corporation Programming non-volatile memory with dual voltage select gate structure
US7586157B2 (en) * 2006-10-17 2009-09-08 Sandisk Corporation Non-volatile memory with dual voltage select gate structure
US7596031B2 (en) 2006-10-30 2009-09-29 Sandisk Corporation Faster programming of highest multi-level state for non-volatile memory
US7468911B2 (en) * 2006-11-02 2008-12-23 Sandisk Corporation Non-volatile memory using multiple boosting modes for reduced program disturb
US7440323B2 (en) * 2006-11-02 2008-10-21 Sandisk Corporation Reducing program disturb in non-volatile memory using multiple boosting modes
US7508703B2 (en) * 2006-11-13 2009-03-24 Sandisk Corporation Non-volatile memory with boost structures
US7696035B2 (en) * 2006-11-13 2010-04-13 Sandisk Corporation Method for fabricating non-volatile memory with boost structures
US7508710B2 (en) * 2006-11-13 2009-03-24 Sandisk Corporation Operating non-volatile memory with boost structures
KR101079350B1 (ko) 2006-12-12 2011-11-04 샌디스크 코포레이션 보다 이른 소스측 부스팅을 이용하여 비휘발성 저장소에서 프로그램 디스터브를 감소시키는 방법
US7623387B2 (en) * 2006-12-12 2009-11-24 Sandisk Corporation Non-volatile storage with early source-side boosting for reducing program disturb
US7623386B2 (en) * 2006-12-12 2009-11-24 Sandisk Corporation Reducing program disturb in non-volatile storage using early source-side boosting
US7570520B2 (en) * 2006-12-27 2009-08-04 Sandisk Corporation Non-volatile storage system with initial programming voltage based on trial
US7551482B2 (en) * 2006-12-27 2009-06-23 Sandisk Corporation Method for programming with initial programming voltage based on trial
WO2008083162A1 (en) * 2006-12-28 2008-07-10 Sandisk Corporation Retention margin program verification
US7652918B2 (en) * 2006-12-28 2010-01-26 Sandisk Corporation Retention margin program verification
US7616499B2 (en) * 2006-12-28 2009-11-10 Sandisk Corporation Retention margin program verification
WO2008083136A2 (en) * 2006-12-29 2008-07-10 Sandisk Corporation Resistance sensing and compensation for non-volatile storage
US7583539B2 (en) * 2006-12-30 2009-09-01 Sandisk Corporation Non-volatile storage with bias for temperature compensation
US7468919B2 (en) * 2006-12-30 2008-12-23 Sandisk Corporation Biasing non-volatile storage based on selected word line
US7468920B2 (en) 2006-12-30 2008-12-23 Sandisk Corporation Applying adaptive body bias to non-volatile storage
US7554853B2 (en) * 2006-12-30 2009-06-30 Sandisk Corporation Non-volatile storage with bias based on selective word line
US7525843B2 (en) * 2006-12-30 2009-04-28 Sandisk Corporation Non-volatile storage with adaptive body bias
US7583535B2 (en) * 2006-12-30 2009-09-01 Sandisk Corporation Biasing non-volatile storage to compensate for temperature variations
WO2008103586A1 (en) 2007-02-20 2008-08-28 Sandisk Corporation Dynamic verify based on threshold voltage distribution
US7657572B2 (en) * 2007-03-06 2010-02-02 Microsoft Corporation Selectively utilizing a plurality of disparate solid state storage locations
US7797480B2 (en) * 2007-03-29 2010-09-14 Sandisk Corporation Method for reading non-volatile storage using pre-conditioning waveforms and modified reliability metrics
US7904793B2 (en) 2007-03-29 2011-03-08 Sandisk Corporation Method for decoding data in non-volatile storage using reliability metrics based on multiple reads
US7606076B2 (en) * 2007-04-05 2009-10-20 Sandisk Corporation Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise
US20080247253A1 (en) * 2007-04-05 2008-10-09 Hao Thai Nguyen Non-volatile storage with temperature compensation for bit line during sense operations
US7606071B2 (en) * 2007-04-24 2009-10-20 Sandisk Corporation Compensating source voltage drop in non-volatile storage
US7606072B2 (en) * 2007-04-24 2009-10-20 Sandisk Corporation Non-volatile storage with compensation for source voltage drop
US7440327B1 (en) 2007-04-25 2008-10-21 Sandisk Corporation Non-volatile storage with reduced power consumption during read operations
US7606079B2 (en) * 2007-04-25 2009-10-20 Sandisk Corporation Reducing power consumption during read operations in non-volatile storage
US7577026B2 (en) * 2007-05-07 2009-08-18 Sandisk Corporation Source and drain side early boosting using local self boosting for non-volatile storage
US7463522B2 (en) * 2007-05-07 2008-12-09 Sandisk Corporation Non-volatile storage with boosting using channel isolation switching
US7460404B1 (en) * 2007-05-07 2008-12-02 Sandisk Corporation Boosting for non-volatile storage using channel isolation switching
US8073648B2 (en) * 2007-05-14 2011-12-06 Sandisk Il Ltd. Measuring threshold voltage distribution in memory using an aggregate characteristic
KR100836800B1 (ko) * 2007-05-30 2008-06-10 삼성전자주식회사 메모리 데이터 독출 장치 및 이를 이용한 메모리 데이터독출 방법
US7545678B2 (en) * 2007-06-29 2009-06-09 Sandisk Corporation Non-volatile storage with source bias all bit line sensing
US7471567B1 (en) 2007-06-29 2008-12-30 Sandisk Corporation Method for source bias all bit line sensing in non-volatile storage
US7619920B2 (en) * 2007-07-05 2009-11-17 Kabushiki Kaisha Toshiba NAND type flash memory and write method of the same
US7869273B2 (en) 2007-09-04 2011-01-11 Sandisk Corporation Reducing the impact of interference during programming
US7577034B2 (en) * 2007-09-26 2009-08-18 Sandisk Corporation Reducing programming voltage differential nonlinearity in non-volatile storage
US7978520B2 (en) 2007-09-27 2011-07-12 Sandisk Corporation Compensation of non-volatile memory chip non-idealities by program pulse adjustment
US7894263B2 (en) * 2007-09-28 2011-02-22 Sandisk Corporation High voltage generation and control in source-side injection programming of non-volatile memory
KR101177278B1 (ko) * 2007-10-08 2012-08-24 삼성전자주식회사 비휘발성 메모리 셀 프로그래밍 방법
US8117375B2 (en) * 2007-10-17 2012-02-14 Micron Technology, Inc. Memory device program window adjustment
US7613045B2 (en) * 2007-11-26 2009-11-03 Sandisk Il, Ltd. Operation sequence and commands for measuring threshold voltage distribution in memory
US7688638B2 (en) * 2007-12-07 2010-03-30 Sandisk Corporation Faster programming of multi-level non-volatile storage through reduced verify operations
US7723186B2 (en) * 2007-12-18 2010-05-25 Sandisk Corporation Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layer
US8193055B1 (en) 2007-12-18 2012-06-05 Sandisk Technologies Inc. Method of forming memory with floating gates including self-aligned metal nanodots using a polymer solution
KR101406279B1 (ko) 2007-12-20 2014-06-13 삼성전자주식회사 반도체 메모리 장치 및 그것의 읽기 페일 분석 방법
US7915664B2 (en) * 2008-04-17 2011-03-29 Sandisk Corporation Non-volatile memory with sidewall channels and raised source/drain regions
US7808836B2 (en) * 2008-04-29 2010-10-05 Sandisk Il Ltd. Non-volatile memory with adaptive setting of state voltage levels
US7808819B2 (en) * 2008-04-29 2010-10-05 Sandisk Il Ltd. Method for adaptive setting of state voltage levels in non-volatile memory
US8051240B2 (en) * 2008-05-09 2011-11-01 Sandisk Technologies Inc. Compensating non-volatile storage using different pass voltages during program-verify and read
US7719902B2 (en) * 2008-05-23 2010-05-18 Sandisk Corporation Enhanced bit-line pre-charge scheme for increasing channel boosting in non-volatile storage
US7952928B2 (en) * 2008-05-27 2011-05-31 Sandisk Il Ltd. Increasing read throughput in non-volatile memory
US7751249B2 (en) * 2008-06-27 2010-07-06 Sandisk Corporation Minimizing power noise during sensing in memory device
US7751250B2 (en) * 2008-06-27 2010-07-06 Sandisk Corporation Memory device with power noise minimization during sensing
US7800956B2 (en) * 2008-06-27 2010-09-21 Sandisk Corporation Programming algorithm to reduce disturb with minimal extra time penalty
US7808831B2 (en) 2008-06-30 2010-10-05 Sandisk Corporation Read disturb mitigation in non-volatile memory
US20090327535A1 (en) * 2008-06-30 2009-12-31 Liu Tz-Yi Adjustable read latency for memory device in page-mode access
US7876611B2 (en) * 2008-08-08 2011-01-25 Sandisk Corporation Compensating for coupling during read operations in non-volatile storage
US7755946B2 (en) 2008-09-19 2010-07-13 Sandisk Corporation Data state-based temperature compensation during sensing in non-volatile memory
US7974133B2 (en) 2009-01-06 2011-07-05 Sandisk Technologies Inc. Robust sensing circuit and method
US8004900B2 (en) * 2009-03-17 2011-08-23 Sandisk Technologies Inc. Controlling select gate voltage during erase to improve endurance in non-volatile memory
JP2010218637A (ja) * 2009-03-17 2010-09-30 Toshiba Corp 半導体記憶装置およびその制御方法
US7907449B2 (en) 2009-04-09 2011-03-15 Sandisk Corporation Two pass erase for non-volatile storage
KR20100124087A (ko) * 2009-05-18 2010-11-26 삼성전자주식회사 메모리 컨트롤러, 그것을 포함하는 메모리 시스템 그리고 그것의 동작 방법
US8054691B2 (en) * 2009-06-26 2011-11-08 Sandisk Technologies Inc. Detecting the completion of programming for non-volatile storage
US8383479B2 (en) 2009-07-21 2013-02-26 Sandisk Technologies Inc. Integrated nanostructure-based non-volatile memory fabrication
US8400854B2 (en) 2009-09-11 2013-03-19 Sandisk Technologies Inc. Identifying at-risk data in non-volatile storage
US8634240B2 (en) * 2009-10-28 2014-01-21 SanDisk Technologies, Inc. Non-volatile memory and method with accelerated post-write read to manage errors
US8423866B2 (en) * 2009-10-28 2013-04-16 SanDisk Technologies, Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8214700B2 (en) 2009-10-28 2012-07-03 Sandisk Technologies Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8473809B2 (en) 2009-11-20 2013-06-25 Sandisk Technologies Inc. Data coding for improved ECC efficiency
US8174895B2 (en) 2009-12-15 2012-05-08 Sandisk Technologies Inc. Programming non-volatile storage with fast bit detection and verify skip
US8213255B2 (en) 2010-02-19 2012-07-03 Sandisk Technologies Inc. Non-volatile storage with temperature compensation based on neighbor state information
JP2011204298A (ja) 2010-03-24 2011-10-13 Toshiba Corp 不揮発性半導体メモリ
US8218366B2 (en) 2010-04-18 2012-07-10 Sandisk Technologies Inc. Programming non-volatile storage including reducing impact from other memory cells
US8546214B2 (en) 2010-04-22 2013-10-01 Sandisk Technologies Inc. P-type control gate in non-volatile storage and methods for forming same
US8208310B2 (en) 2010-05-04 2012-06-26 Sandisk Technologies Inc. Mitigating channel coupling effects during sensing of non-volatile storage elements
US8274831B2 (en) 2010-05-24 2012-09-25 Sandisk Technologies Inc. Programming non-volatile storage with synchronized coupling
US8514630B2 (en) 2010-07-09 2013-08-20 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays: current based approach
US8432732B2 (en) 2010-07-09 2013-04-30 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays
KR101139095B1 (ko) * 2010-07-09 2012-04-30 에스케이하이닉스 주식회사 불휘발성 메모리 소자 및 이의 프로그램 방법
US8305807B2 (en) 2010-07-09 2012-11-06 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
US8645794B1 (en) * 2010-07-31 2014-02-04 Apple Inc. Data storage in analog memory cells using a non-integer number of bits per cell
US9135998B2 (en) 2010-11-09 2015-09-15 Micron Technology, Inc. Sense operation flags in a memory device
US8837216B2 (en) 2010-12-13 2014-09-16 Sandisk Technologies Inc. Non-volatile storage system with shared bit lines connected to a single selection device
US8379454B2 (en) 2011-05-05 2013-02-19 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
US8456911B2 (en) 2011-06-07 2013-06-04 Sandisk Technologies Inc. Intelligent shifting of read pass voltages for non-volatile storage
US20130031431A1 (en) 2011-07-28 2013-01-31 Eran Sharon Post-Write Read in Non-Volatile Memories Using Comparison of Data as Written in Binary and Multi-State Formats
US8750042B2 (en) 2011-07-28 2014-06-10 Sandisk Technologies Inc. Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
US8775901B2 (en) 2011-07-28 2014-07-08 SanDisk Technologies, Inc. Data recovery for defective word lines during programming of non-volatile memory arrays
US8726104B2 (en) 2011-07-28 2014-05-13 Sandisk Technologies Inc. Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
US8638606B2 (en) 2011-09-16 2014-01-28 Sandisk Technologies Inc. Substrate bias during program of non-volatile storage
US9361986B2 (en) 2011-09-19 2016-06-07 Sandisk Technologies Inc. High endurance non-volatile storage
US8842476B2 (en) * 2011-11-09 2014-09-23 Sandisk Technologies Inc. Erratic program detection for non-volatile storage
US8630118B2 (en) 2011-11-09 2014-01-14 Sandisk Technologies Inc. Defective word line detection
EP2780912B1 (de) 2011-11-18 2016-10-26 SanDisk Technologies LLC Nichtflüchtiger speicher mit datenwiederherstellung
US9076544B2 (en) 2011-11-18 2015-07-07 Sandisk Technologies Inc. Operation for non-volatile storage system with shared bit lines
US8885404B2 (en) 2011-12-24 2014-11-11 Sandisk Technologies Inc. Non-volatile storage system with three layer floating gate
US8582381B2 (en) 2012-02-23 2013-11-12 SanDisk Technologies, Inc. Temperature based compensation during verify operations for non-volatile storage
US8730722B2 (en) 2012-03-02 2014-05-20 Sandisk Technologies Inc. Saving of data in cases of word-line to word-line short in memory arrays
US8937835B2 (en) 2012-03-13 2015-01-20 Sandisk Technologies Inc. Non-volatile storage with read process that reduces disturb
US9171627B2 (en) 2012-04-11 2015-10-27 Aplus Flash Technology, Inc. Non-boosting program inhibit scheme in NAND design
US9087595B2 (en) 2012-04-20 2015-07-21 Aplus Flash Technology, Inc. Shielding 2-cycle half-page read and program schemes for advanced NAND flash design
US8937837B2 (en) 2012-05-08 2015-01-20 Sandisk Technologies Inc. Bit line BL isolation scheme during erase operation for non-volatile storage
JP2013254537A (ja) 2012-06-06 2013-12-19 Toshiba Corp 半導体記憶装置及びコントローラ
US20130343125A1 (en) * 2012-06-22 2013-12-26 Mosaid Technologies Incorporated Apparatus and methods for carrying out operations in a non-volatile memory cell having multiple memory states
US9142305B2 (en) 2012-06-28 2015-09-22 Sandisk Technologies Inc. System to reduce stress on word line select transistor during erase operation
US8566671B1 (en) 2012-06-29 2013-10-22 Sandisk Technologies Inc. Configurable accelerated post-write read to manage errors
US8822288B2 (en) 2012-07-02 2014-09-02 Sandisk Technologies Inc. NAND memory device containing nanodots and method of making thereof
US9053819B2 (en) 2012-07-11 2015-06-09 Sandisk Technologies Inc. Programming method to tighten threshold voltage width with avoiding program disturb
US9135989B2 (en) 2012-09-06 2015-09-15 Sandisk Technologies Inc. Write data preservation for non-volatile storage
US20140071761A1 (en) 2012-09-10 2014-03-13 Sandisk Technologies Inc. Non-volatile storage with joint hard bit and soft bit reading
US20140108705A1 (en) 2012-10-12 2014-04-17 Sandisk Technologies Inc. Use of High Endurance Non-Volatile Memory for Read Acceleration
US9159406B2 (en) 2012-11-02 2015-10-13 Sandisk Technologies Inc. Single-level cell endurance improvement with pre-defined blocks
US9225356B2 (en) * 2012-11-12 2015-12-29 Freescale Semiconductor, Inc. Programming a non-volatile memory (NVM) system having error correction code (ECC)
US8823075B2 (en) 2012-11-30 2014-09-02 Sandisk Technologies Inc. Select gate formation for nanodot flat cell
US9076545B2 (en) 2013-01-17 2015-07-07 Sandisk Tecnologies Inc. Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution
US9026757B2 (en) 2013-01-25 2015-05-05 Sandisk Technologies Inc. Non-volatile memory programming data preservation
US8913428B2 (en) 2013-01-25 2014-12-16 Sandisk Technologies Inc. Programming non-volatile storage system with multiple memory die
US8885416B2 (en) 2013-01-30 2014-11-11 Sandisk Technologies Inc. Bit line current trip point modulation for reading nonvolatile storage elements
US8971128B2 (en) 2013-01-31 2015-03-03 Sandisk Technologies Inc. Adaptive initial program voltage for non-volatile memory
US8987802B2 (en) 2013-02-28 2015-03-24 Sandisk Technologies Inc. Method for using nanoparticles to make uniform discrete floating gate layer
US9349452B2 (en) 2013-03-07 2016-05-24 Sandisk Technologies Inc. Hybrid non-volatile memory cells for shared bit line
US9331181B2 (en) 2013-03-11 2016-05-03 Sandisk Technologies Inc. Nanodot enhanced hybrid floating gate for non-volatile memory devices
US9165656B2 (en) 2013-03-11 2015-10-20 Sandisk Technologies Inc. Non-volatile storage with shared bit lines and flat memory cells
US9177808B2 (en) 2013-05-21 2015-11-03 Sandisk Technologies Inc. Memory device with control gate oxygen diffusion control and method of making thereof
US9183940B2 (en) 2013-05-21 2015-11-10 Aplus Flash Technology, Inc. Low disturbance, power-consumption, and latency in NAND read and program-verify operations
US9263137B2 (en) 2013-06-27 2016-02-16 Aplus Flash Technology, Inc. NAND array architecture for multiple simutaneous program and read
US8969153B2 (en) 2013-07-01 2015-03-03 Sandisk Technologies Inc. NAND string containing self-aligned control gate sidewall cladding
US9230677B2 (en) 2013-07-25 2016-01-05 Aplus Flash Technology, Inc NAND array hiarchical BL structures for multiple-WL and all-BL simultaneous erase, erase-verify, program, program-verify, and read operations
US9293205B2 (en) 2013-09-14 2016-03-22 Aplus Flash Technology, Inc Multi-task concurrent/pipeline NAND operations on all planes
US9165683B2 (en) 2013-09-23 2015-10-20 Sandisk Technologies Inc. Multi-word line erratic programming detection
US9213601B2 (en) 2013-12-03 2015-12-15 Sandisk Technologies Inc. Adaptive data re-compaction after post-write read verification operations
US9613704B2 (en) 2013-12-25 2017-04-04 Aplus Flash Technology, Inc 2D/3D NAND memory array with bit-line hierarchical structure for multi-page concurrent SLC/MLC program and program-verify
US9443612B2 (en) 2014-07-10 2016-09-13 Sandisk Technologies Llc Determination of bit line to low voltage signal shorts
US9460809B2 (en) 2014-07-10 2016-10-04 Sandisk Technologies Llc AC stress mode to screen out word line to word line shorts
US9484086B2 (en) 2014-07-10 2016-11-01 Sandisk Technologies Llc Determination of word line to local source line shorts
US9514835B2 (en) 2014-07-10 2016-12-06 Sandisk Technologies Llc Determination of word line to word line shorts between adjacent blocks
WO2016014731A1 (en) 2014-07-22 2016-01-28 Aplus Flash Technology, Inc. Yukai vsl-based vt-compensation for nand memory
KR102235492B1 (ko) 2014-08-25 2021-04-05 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 검증 방법
US9240249B1 (en) 2014-09-02 2016-01-19 Sandisk Technologies Inc. AC stress methods to screen out bit line defects
US9202593B1 (en) 2014-09-02 2015-12-01 Sandisk Technologies Inc. Techniques for detecting broken word lines in non-volatile memories
US9449694B2 (en) 2014-09-04 2016-09-20 Sandisk Technologies Llc Non-volatile memory with multi-word line select for defect detection operations
KR20170011641A (ko) * 2015-07-23 2017-02-02 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그것의 동작 방법
US9659666B2 (en) 2015-08-31 2017-05-23 Sandisk Technologies Llc Dynamic memory recovery at the sub-block level
CN108733305B (zh) * 2017-04-13 2021-09-03 旺宏电子股份有限公司 存储器装置、系统及其操作方法
US10134479B2 (en) 2017-04-21 2018-11-20 Sandisk Technologies Llc Non-volatile memory with reduced program speed variation
US10249382B2 (en) 2017-08-22 2019-04-02 Sandisk Technologies Llc Determination of fast to program word lines in non-volatile memory
KR20190037659A (ko) * 2017-09-29 2019-04-08 에스케이하이닉스 주식회사 불휘발성 메모리 장치, 불휘발성 메모리 장치의 동작 방법 및 불휘발성 메모리 장치를 포함하는 데이터 저장 장치
US10304550B1 (en) 2017-11-29 2019-05-28 Sandisk Technologies Llc Sense amplifier with negative threshold sensing for non-volatile memory
KR102612891B1 (ko) * 2018-05-31 2023-12-13 에스케이하이닉스 주식회사 메모리 장치, 그것의 동작방법 및 메모리 시스템
US10978156B2 (en) 2018-06-29 2021-04-13 Sandisk Technologies Llc Concurrent programming of multiple cells for non-volatile memory devices
US11545221B2 (en) 2018-06-29 2023-01-03 Sandisk Technologies Llc Concurrent programming of multiple cells for non-volatile memory devices
KR102461099B1 (ko) * 2018-08-07 2022-11-01 에스케이하이닉스 주식회사 메모리 장치 및 이를 포함하는 저장 장치 및 그 동작 방법
US10643695B1 (en) 2019-01-10 2020-05-05 Sandisk Technologies Llc Concurrent multi-state program verify for non-volatile memory
US10839928B1 (en) 2019-05-16 2020-11-17 Sandisk Technologies Llc Non-volatile memory with countermeasure for over programming
US11081198B2 (en) * 2019-05-16 2021-08-03 Sandisk Technologies Llc Non-volatile memory with countermeasure for over programming
CN110825387B (zh) * 2019-11-01 2023-08-01 积成电子股份有限公司 一种终端设备存储器件过度编程快速定位方法
WO2021092830A1 (en) 2019-11-14 2021-05-20 Yangtze Memory Technologies Co., Ltd. Memory device capable of reducing program disturbance and erasing method thereof
US11024392B1 (en) 2019-12-23 2021-06-01 Sandisk Technologies Llc Sense amplifier for bidirectional sensing of memory cells of a non-volatile memory
JP7476061B2 (ja) 2020-09-15 2024-04-30 キオクシア株式会社 半導体記憶装置
WO2022205268A1 (en) * 2021-04-01 2022-10-06 Yangtze Memory Technologies Co., Ltd. Programming for three-dimensional nand memory

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5602789A (en) 1991-03-12 1997-02-11 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller
JPH08249893A (ja) * 1995-03-07 1996-09-27 Toshiba Corp 半導体記憶装置
KR960002006B1 (ko) 1991-03-12 1996-02-09 가부시끼가이샤 도시바 2개의 기준 레벨을 사용하는 기록 검증 제어기를 갖는 전기적으로 소거 가능하고 프로그램 가능한 불휘발성 메모리 장치
JP3152720B2 (ja) * 1991-03-12 2001-04-03 株式会社東芝 不揮発性半導体記憶装置
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
KR950000273B1 (ko) * 1992-02-21 1995-01-12 삼성전자 주식회사 불휘발성 반도체 메모리장치 및 그 최적화 기입방법
US5742760A (en) * 1992-05-12 1998-04-21 Compaq Computer Corporation Network packet switch using shared memory for repeating and bridging packets at media rate
US5532962A (en) 1992-05-20 1996-07-02 Sandisk Corporation Soft errors handling in EEPROM devices
US5422580A (en) 1993-10-14 1995-06-06 Aps Technologies Switchable active termination for SCSI peripheral devices
US5523972A (en) * 1994-06-02 1996-06-04 Intel Corporation Method and apparatus for verifying the programming of multi-level flash EEPROM memory
US5539690A (en) * 1994-06-02 1996-07-23 Intel Corporation Write verify schemes for flash memory with multilevel cells
US5748535A (en) * 1994-10-26 1998-05-05 Macronix International Co., Ltd. Advanced program verify for page mode flash memory
KR0169412B1 (ko) * 1995-10-16 1999-02-01 김광호 불휘발성 반도체 메모리 장치
KR100253868B1 (ko) * 1995-11-13 2000-05-01 니시무로 타이죠 불휘발성 반도체기억장치
US6131140A (en) 1995-12-22 2000-10-10 Cypress Semiconductor Corp. Integrated cache memory with system control logic and adaptation of RAM bus to a cache pinout
US5754469A (en) * 1996-06-14 1998-05-19 Macronix International Co., Ltd. Page mode floating gate memory device storing multiple bits per cell
US5764568A (en) * 1996-10-24 1998-06-09 Micron Quantum Devices, Inc. Method for performing analog over-program and under-program detection for a multistate memory cell
US5771346A (en) 1996-10-24 1998-06-23 Micron Quantum Devices, Inc. Apparatus and method for detecting over-programming condition in multistate memory device
JP3517081B2 (ja) 1997-05-22 2004-04-05 株式会社東芝 多値不揮発性半導体記憶装置
US5867429A (en) 1997-11-19 1999-02-02 Sandisk Corporation High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
US6333871B1 (en) * 1998-02-16 2001-12-25 Hitachi, Ltd. Nonvolatile semiconductor memory including a controller for providing an improved reprogram operation
US6147547A (en) 1998-05-25 2000-11-14 Mitsubishi Denki Kabushiki Kaisha Charge pump circuit capable of generating positive and negative voltages and nonvolatile semiconductor memory device comprising the same
JP3999900B2 (ja) * 1998-09-10 2007-10-31 株式会社東芝 不揮発性半導体メモリ
JP2000173289A (ja) 1998-12-10 2000-06-23 Toshiba Corp エラー訂正可能なフラッシュメモリシステム
US6567302B2 (en) * 1998-12-29 2003-05-20 Micron Technology, Inc. Method and apparatus for programming multi-state cells in a memory device
KR100388179B1 (ko) * 1999-02-08 2003-06-19 가부시끼가이샤 도시바 불휘발성 반도체 메모리
TW475267B (en) 1999-07-13 2002-02-01 Toshiba Corp Semiconductor memory
JP2001093288A (ja) * 1999-09-20 2001-04-06 Toshiba Corp 不揮発性半導体記憶装置
US6538922B1 (en) * 2000-09-27 2003-03-25 Sandisk Corporation Writable tracking cells
KR100676722B1 (ko) 2000-12-21 2007-02-01 후지쯔 가부시끼가이샤 비휘발성 반도체 기억 장치 및 데이터 소거 방법
US6493266B1 (en) 2001-04-09 2002-12-10 Advanced Micro Devices, Inc. Soft program and soft program verify of the core cells in flash memory array
US6522580B2 (en) 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6717847B2 (en) * 2001-09-17 2004-04-06 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6456528B1 (en) 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6967872B2 (en) * 2001-12-18 2005-11-22 Sandisk Corporation Method and system for programming and inhibiting multi-level, non-volatile memory cells
US6907497B2 (en) * 2001-12-20 2005-06-14 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
US6542580B1 (en) * 2002-01-15 2003-04-01 Rapiscan Security Products (Usa), Inc. Relocatable X-ray imaging system and method for inspecting vehicles and containers
US6542407B1 (en) 2002-01-18 2003-04-01 Sandisk Corporation Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
AU2003237515A1 (en) 2002-06-19 2004-01-06 Sandisk Corporation Deep wordline trench to shield cross coupling between adjacent cells for scaled nand
US6917542B2 (en) * 2003-07-29 2005-07-12 Sandisk Corporation Detecting over programmed memory

Also Published As

Publication number Publication date
CN1853239B (zh) 2012-02-29
KR101049581B1 (ko) 2011-07-15
JP2007500411A (ja) 2007-01-11
EP1656676B1 (de) 2011-09-28
CN1853239A (zh) 2006-10-25
WO2005015566A8 (en) 2007-09-07
EP1656676A1 (de) 2006-05-17
KR20060039929A (ko) 2006-05-09
US7215575B2 (en) 2007-05-08
US20050024939A1 (en) 2005-02-03
WO2005015566A1 (en) 2005-02-17
JP4754486B2 (ja) 2011-08-24
US6917542B2 (en) 2005-07-12
TW200509136A (en) 2005-03-01
US20050207222A1 (en) 2005-09-22
TWI248085B (en) 2006-01-21

Similar Documents

Publication Publication Date Title
ATE526667T1 (de) Erkennung eines überprogrammierten speichers
TWI264012B (en) Detecting over programmed memory after further programming
ATE478422T1 (de) Speicherblocklöschung in einer flash-speicher- vorrichtung
ATE490540T1 (de) Variable programmierung von nicht-flüchtigem speicher
WO2004102625A3 (en) Semiconductor memory celll, array, architecture and device, and method of operating same
TWI256052B (en) Non-volatile semiconductor memory device
TW200701237A (en) Reference scheme for a non-volatile semiconductor memory device
WO2008008466A3 (en) Current sensing for flash
TW200636718A (en) Nonvolatile semiconductor memory device
TW200737211A (en) An programmable non-volatile memory device of lowing program margin needed for user program operation and method for testing the same
GB2432699B (en) Read approach for multi-level virtual ground memory
KR970023451A (ko) 불휘발성 반도체 메모리 장치
WO2008058082A3 (en) Adaptive read and write systems and methods for memory cells
KR101748055B1 (ko) 감지 증폭기를 위한 저전압 전류 레퍼런스 발생기
TW200625315A (en) Nonvolatile semiconductor memory device which erases data in units of one block including a number of memory cells, and data erasing method of the nonvolatile semiconductor memory device
CA2554829A1 (en) System and method for detecting the width of a data bus
TW200641899A (en) Program method of flash memory device
WO2007087097A3 (en) Nonvolatile memory and method of program inhibition
TW200721175A (en) Method of writing to non-volatile semiconductor memory device storing information depending on variation in level of threshold voltage
DE60217463D1 (de) Nichtflüchtige ferroelektrische Zweitransistor-Speicherzelle
SG151220A1 (en) Method and device for irreversibly programming and reading nonvolatile memory cells
TW200731266A (en) Sensing scheme for a non-volatile semiconductor memory cell
DE60230592D1 (de) Selbstreparaturverfahren für nichtflüchtige Speicheranordnung mit Lösch-/Programmierfehlerdetektion, und nichtflüchtige Speicheranordnung dafür
CN103227174A (zh) 一种半导体存储装置及其版图
US20140043928A1 (en) Sense Amplifier Circuit for Nonvolatile Memory

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties