ATE383648T1 - Fehlerbehandlung für beschreibbare referenz- speicherzellen zum verfolgen von einsatzspannungsdriften - Google Patents

Fehlerbehandlung für beschreibbare referenz- speicherzellen zum verfolgen von einsatzspannungsdriften

Info

Publication number
ATE383648T1
ATE383648T1 AT02773956T AT02773956T ATE383648T1 AT E383648 T1 ATE383648 T1 AT E383648T1 AT 02773956 T AT02773956 T AT 02773956T AT 02773956 T AT02773956 T AT 02773956T AT E383648 T1 ATE383648 T1 AT E383648T1
Authority
AT
Austria
Prior art keywords
memory cells
error handling
reference memory
voltage drift
utility voltage
Prior art date
Application number
AT02773956T
Other languages
English (en)
Inventor
Geoffrey Gongwer
Shahzad Khalid
Daniel Guterman
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE383648T1 publication Critical patent/ATE383648T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Electrotherapy Devices (AREA)
AT02773956T 2001-11-02 2002-10-30 Fehlerbehandlung für beschreibbare referenz- speicherzellen zum verfolgen von einsatzspannungsdriften ATE383648T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/053,339 US6678192B2 (en) 2001-11-02 2001-11-02 Error management for writable tracking storage units

Publications (1)

Publication Number Publication Date
ATE383648T1 true ATE383648T1 (de) 2008-01-15

Family

ID=21983519

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02773956T ATE383648T1 (de) 2001-11-02 2002-10-30 Fehlerbehandlung für beschreibbare referenz- speicherzellen zum verfolgen von einsatzspannungsdriften

Country Status (9)

Country Link
US (1) US6678192B2 (de)
EP (1) EP1440447B1 (de)
JP (1) JP4398249B2 (de)
KR (1) KR101009545B1 (de)
CN (1) CN1578988B (de)
AT (1) ATE383648T1 (de)
DE (1) DE60224552T2 (de)
TW (1) TWI285807B (de)
WO (1) WO2003041083A1 (de)

Families Citing this family (134)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5657332A (en) * 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
US6992932B2 (en) * 2002-10-29 2006-01-31 Saifun Semiconductors Ltd Method circuit and system for read error detection in a non-volatile memory array
US6963505B2 (en) * 2002-10-29 2005-11-08 Aifun Semiconductors Ltd. Method circuit and system for determining a reference voltage
US7237074B2 (en) * 2003-06-13 2007-06-26 Sandisk Corporation Tracking cells for a memory system
US7012835B2 (en) * 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
US7257025B2 (en) * 2004-12-09 2007-08-14 Saifun Semiconductors Ltd Method for reading non-volatile memory cells
KR100707200B1 (ko) * 2005-07-22 2007-04-13 삼성전자주식회사 핀-타입 채널 영역을 갖는 비휘발성 메모리 소자 및 그제조 방법
US7546515B2 (en) * 2005-12-27 2009-06-09 Sandisk Corporation Method of storing downloadable firmware on bulk media
US7536627B2 (en) * 2005-12-27 2009-05-19 Sandisk Corporation Storing downloadable firmware on bulk media
US8725929B1 (en) 2006-11-06 2014-05-13 Marvell World Trade Ltd. Adaptive read and write systems and methods for memory cells
US8645793B2 (en) 2008-06-03 2014-02-04 Marvell International Ltd. Statistical tracking for flash memory
WO2007132452A2 (en) * 2006-05-12 2007-11-22 Anobit Technologies Reducing programming error in memory devices
WO2007132456A2 (en) * 2006-05-12 2007-11-22 Anobit Technologies Ltd. Memory device with adaptive capacity
WO2007132457A2 (en) * 2006-05-12 2007-11-22 Anobit Technologies Ltd. Combined distortion estimation and error correction coding for memory devices
CN103280239B (zh) 2006-05-12 2016-04-06 苹果公司 存储设备中的失真估计和消除
US7852690B2 (en) * 2006-05-15 2010-12-14 Apple Inc. Multi-chip package for a flash memory
US7568135B2 (en) * 2006-05-15 2009-07-28 Apple Inc. Use of alternative value in cell detection
US8000134B2 (en) * 2006-05-15 2011-08-16 Apple Inc. Off-die charge pump that supplies multiple flash devices
US7639531B2 (en) * 2006-05-15 2009-12-29 Apple Inc. Dynamic cell bit resolution
US7511646B2 (en) * 2006-05-15 2009-03-31 Apple Inc. Use of 8-bit or higher A/D for NAND cell value
US7551486B2 (en) 2006-05-15 2009-06-23 Apple Inc. Iterative memory cell charging based on reference cell value
US7639542B2 (en) * 2006-05-15 2009-12-29 Apple Inc. Maintenance operations for multi-level data storage cells
US7701797B2 (en) * 2006-05-15 2010-04-20 Apple Inc. Two levels of voltage regulation supplied for logic and data programming voltage of a memory device
US7911834B2 (en) * 2006-05-15 2011-03-22 Apple Inc. Analog interface for a flash memory die
US7613043B2 (en) * 2006-05-15 2009-11-03 Apple Inc. Shifting reference values to account for voltage sag
WO2008026203A2 (en) 2006-08-27 2008-03-06 Anobit Technologies Estimation of non-linear distortion in memory devices
US7716538B2 (en) 2006-09-27 2010-05-11 Sandisk Corporation Memory with cell population distribution assisted read margining
WO2008039692A2 (en) * 2006-09-27 2008-04-03 Sandisk Corporation Memory with cell population distribution assisted read margining
US7886204B2 (en) 2006-09-27 2011-02-08 Sandisk Corporation Methods of cell population distribution assisted read margining
KR100826500B1 (ko) * 2006-10-23 2008-05-02 삼성전자주식회사 비휘발성 반도체 메모리 장치 및 상기 비휘발성 반도체메모리 장치의 데이터 복구 방법
US7975192B2 (en) 2006-10-30 2011-07-05 Anobit Technologies Ltd. Reading memory cells using multiple thresholds
WO2008053473A2 (en) 2006-10-30 2008-05-08 Anobit Technologies Ltd. Memory cell readout using successive approximation
US7941590B2 (en) * 2006-11-06 2011-05-10 Marvell World Trade Ltd. Adaptive read and write systems and methods for memory cells
US7564716B2 (en) * 2006-11-16 2009-07-21 Freescale Semiconductor, Inc. Memory device with retained indicator of read reference level
US7865797B2 (en) * 2006-11-16 2011-01-04 Freescale Semiconductor, Inc. Memory device with adjustable read reference based on ECC and method thereof
US7545681B2 (en) * 2006-11-27 2009-06-09 Sandisk Corporation Segmented bitscan for verification of programming
US7440319B2 (en) * 2006-11-27 2008-10-21 Sandisk Corporation Apparatus with segmented bitscan for verification of programming
US7924648B2 (en) 2006-11-28 2011-04-12 Anobit Technologies Ltd. Memory power and performance management
US8151163B2 (en) * 2006-12-03 2012-04-03 Anobit Technologies Ltd. Automatic defect management in memory devices
US7593263B2 (en) * 2006-12-17 2009-09-22 Anobit Technologies Ltd. Memory device with reduced reading latency
US7900102B2 (en) * 2006-12-17 2011-03-01 Anobit Technologies Ltd. High-speed programming of memory devices
US8151166B2 (en) * 2007-01-24 2012-04-03 Anobit Technologies Ltd. Reduction of back pattern dependency effects in memory devices
US7751240B2 (en) * 2007-01-24 2010-07-06 Anobit Technologies Ltd. Memory device with negative thresholds
WO2008111058A2 (en) * 2007-03-12 2008-09-18 Anobit Technologies Ltd. Adaptive estimation of memory cell read thresholds
US7808834B1 (en) 2007-04-13 2010-10-05 Marvell International Ltd. Incremental memory refresh
US8001320B2 (en) * 2007-04-22 2011-08-16 Anobit Technologies Ltd. Command interface for memory devices
US8234545B2 (en) * 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
US8429493B2 (en) 2007-05-12 2013-04-23 Apple Inc. Memory device with internal signap processing unit
KR100882841B1 (ko) * 2007-06-19 2009-02-10 삼성전자주식회사 읽기 디스터번스로 인한 비트 에러를 검출할 수 있는메모리 시스템 및 그것의 읽기 방법
US7925936B1 (en) 2007-07-13 2011-04-12 Anobit Technologies Ltd. Memory device with non-uniform programming levels
US8259497B2 (en) 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
US8031526B1 (en) 2007-08-23 2011-10-04 Marvell International Ltd. Write pre-compensation for nonvolatile memory
US8189381B1 (en) 2007-08-28 2012-05-29 Marvell International Ltd. System and method for reading flash memory cells
US8085605B2 (en) 2007-08-29 2011-12-27 Marvell World Trade Ltd. Sequence detection for flash memory with inter-cell interference
US8174905B2 (en) * 2007-09-19 2012-05-08 Anobit Technologies Ltd. Programming orders for reducing distortion in arrays of multi-level analog memory cells
US7773413B2 (en) 2007-10-08 2010-08-10 Anobit Technologies Ltd. Reliable data storage in analog memory cells in the presence of temperature variations
US8000141B1 (en) 2007-10-19 2011-08-16 Anobit Technologies Ltd. Compensation for voltage drifts in analog memory cells
US8068360B2 (en) * 2007-10-19 2011-11-29 Anobit Technologies Ltd. Reading analog memory cells using built-in multi-threshold commands
US8527819B2 (en) * 2007-10-19 2013-09-03 Apple Inc. Data storage in analog memory cell arrays having erase failures
US8270246B2 (en) * 2007-11-13 2012-09-18 Apple Inc. Optimized selection of memory chips in multi-chips memory devices
US8225181B2 (en) 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
US8209588B2 (en) * 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US8456905B2 (en) 2007-12-16 2013-06-04 Apple Inc. Efficient data storage in multi-plane memory devices
US8085586B2 (en) * 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
US8156398B2 (en) * 2008-02-05 2012-04-10 Anobit Technologies Ltd. Parameter estimation based on error correction code parity check equations
US7924587B2 (en) * 2008-02-21 2011-04-12 Anobit Technologies Ltd. Programming of analog memory cells using a single programming pulse per state transition
US7864573B2 (en) 2008-02-24 2011-01-04 Anobit Technologies Ltd. Programming analog memory cells for reduced variance after retention
US8230300B2 (en) * 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
US8059457B2 (en) * 2008-03-18 2011-11-15 Anobit Technologies Ltd. Memory device with multiple-accuracy read commands
US8400858B2 (en) 2008-03-18 2013-03-19 Apple Inc. Memory device with reduced sense time readout
KR101423052B1 (ko) 2008-06-12 2014-07-25 삼성전자주식회사 메모리 장치 및 읽기 레벨 제어 방법
US7924613B1 (en) 2008-08-05 2011-04-12 Anobit Technologies Ltd. Data storage in analog memory cells with protection against programming interruption
US7995388B1 (en) 2008-08-05 2011-08-09 Anobit Technologies Ltd. Data storage using modified voltages
US8949684B1 (en) 2008-09-02 2015-02-03 Apple Inc. Segmented data storage
US8169825B1 (en) 2008-09-02 2012-05-01 Anobit Technologies Ltd. Reliable data storage in analog memory cells subjected to long retention periods
US8000135B1 (en) 2008-09-14 2011-08-16 Anobit Technologies Ltd. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8482978B1 (en) 2008-09-14 2013-07-09 Apple Inc. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8239734B1 (en) 2008-10-15 2012-08-07 Apple Inc. Efficient data storage in storage device arrays
US8261159B1 (en) 2008-10-30 2012-09-04 Apple, Inc. Data scrambling schemes for memory devices
US8208304B2 (en) * 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
US8248831B2 (en) * 2008-12-31 2012-08-21 Apple Inc. Rejuvenation of analog memory cells
US8174857B1 (en) 2008-12-31 2012-05-08 Anobit Technologies Ltd. Efficient readout schemes for analog memory cell devices using multiple read threshold sets
US8924661B1 (en) 2009-01-18 2014-12-30 Apple Inc. Memory system including a controller and processors associated with memory devices
US8228701B2 (en) 2009-03-01 2012-07-24 Apple Inc. Selective activation of programming schemes in analog memory cell arrays
US8832354B2 (en) * 2009-03-25 2014-09-09 Apple Inc. Use of host system resources by memory controller
US8259506B1 (en) 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8199576B2 (en) * 2009-04-08 2012-06-12 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture
US8351236B2 (en) 2009-04-08 2013-01-08 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
US7983065B2 (en) * 2009-04-08 2011-07-19 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
EP2417598B1 (de) 2009-04-08 2017-03-29 SanDisk Technologies LLC Dreidimensionale matrix wiederprogrammierbarer nichtflüchtiger speicherelemente mit vertikalen bitleitungen und doppel-global-bitleitung-architektur
US8238157B1 (en) 2009-04-12 2012-08-07 Apple Inc. Selective re-programming of analog memory cells
US8479080B1 (en) 2009-07-12 2013-07-02 Apple Inc. Adaptive over-provisioning in memory systems
TWI412036B (zh) * 2009-07-22 2013-10-11 Silicon Motion Inc 資料讀取的方法及資料儲存裝置
KR101603099B1 (ko) * 2009-10-01 2016-03-28 삼성전자주식회사 불안정 메모리 셀 산포를 검출하는 메모리 시스템 및 상기 불안정 메모리 셀 산포 검출방법
US8495465B1 (en) 2009-10-15 2013-07-23 Apple Inc. Error correction coding over multiple memory pages
US8677054B1 (en) 2009-12-16 2014-03-18 Apple Inc. Memory management schemes for non-volatile memory devices
US8694814B1 (en) 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US8572311B1 (en) 2010-01-11 2013-10-29 Apple Inc. Redundant data storage in multi-die memory systems
US8694853B1 (en) 2010-05-04 2014-04-08 Apple Inc. Read commands for reading interfering memory cells
US8526237B2 (en) 2010-06-08 2013-09-03 Sandisk 3D Llc Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof
US20110297912A1 (en) 2010-06-08 2011-12-08 George Samachisa Non-Volatile Memory Having 3d Array of Read/Write Elements with Vertical Bit Lines and Laterally Aligned Active Elements and Methods Thereof
US8572423B1 (en) 2010-06-22 2013-10-29 Apple Inc. Reducing peak current in memory systems
US8595591B1 (en) 2010-07-11 2013-11-26 Apple Inc. Interference-aware assignment of programming levels in analog memory cells
US9104580B1 (en) 2010-07-27 2015-08-11 Apple Inc. Cache memory for hybrid disk drives
US8767459B1 (en) 2010-07-31 2014-07-01 Apple Inc. Data storage in analog memory cells across word lines using a non-integer number of bits per cell
US8856475B1 (en) 2010-08-01 2014-10-07 Apple Inc. Efficient selection of memory blocks for compaction
US8694854B1 (en) 2010-08-17 2014-04-08 Apple Inc. Read threshold setting based on soft readout statistics
US9021181B1 (en) 2010-09-27 2015-04-28 Apple Inc. Memory management for unifying memory cell conditions by using maximum time intervals
US8625322B2 (en) 2010-12-14 2014-01-07 Sandisk 3D Llc Non-volatile memory having 3D array of read/write elements with low current structures and methods thereof
US9227456B2 (en) 2010-12-14 2016-01-05 Sandisk 3D Llc Memories with cylindrical read/write stacks
US8885381B2 (en) 2010-12-14 2014-11-11 Sandisk 3D Llc Three dimensional non-volatile storage with dual gated vertical select devices
US8687421B2 (en) 2011-11-21 2014-04-01 Sandisk Technologies Inc. Scrub techniques for use with dynamic read
US9269425B2 (en) 2011-12-30 2016-02-23 Sandisk 3D Llc Low forming voltage non-volatile storage device
US9171584B2 (en) 2012-05-15 2015-10-27 Sandisk 3D Llc Three dimensional non-volatile storage with interleaved vertical select devices above and below vertical bit lines
US9281029B2 (en) 2012-06-15 2016-03-08 Sandisk 3D Llc Non-volatile memory having 3D array architecture with bit line voltage control and methods thereof
US9147439B2 (en) 2012-06-15 2015-09-29 Sandisk 3D Llc Non-volatile memory having 3D array architecture with staircase word lines and vertical bit lines and methods thereof
CN103578532B (zh) * 2012-08-01 2016-08-10 旺宏电子股份有限公司 存储装置的操作方法与存储器阵列及其操作方法
WO2014138124A1 (en) 2013-03-04 2014-09-12 Sandisk 3D Llc Vertical bit line non-volatile memory systems and methods of fabrication
US9064547B2 (en) 2013-03-05 2015-06-23 Sandisk 3D Llc 3D non-volatile memory having low-current cells and methods
US9165933B2 (en) 2013-03-07 2015-10-20 Sandisk 3D Llc Vertical bit line TFT decoder for high voltage operation
US9105468B2 (en) 2013-09-06 2015-08-11 Sandisk 3D Llc Vertical bit line wide band gap TFT decoder
US9362338B2 (en) 2014-03-03 2016-06-07 Sandisk Technologies Inc. Vertical thin film transistors in non-volatile storage systems
US9379246B2 (en) 2014-03-05 2016-06-28 Sandisk Technologies Inc. Vertical thin film transistor selection devices and methods of fabrication
US9230689B2 (en) 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
US9123392B1 (en) 2014-03-28 2015-09-01 Sandisk 3D Llc Non-volatile 3D memory with cell-selectable word line decoding
US9627009B2 (en) 2014-07-25 2017-04-18 Sandisk Technologies Llc Interleaved grouped word lines for three dimensional non-volatile storage
US9552171B2 (en) 2014-10-29 2017-01-24 Sandisk Technologies Llc Read scrub with adaptive counter management
US9978456B2 (en) 2014-11-17 2018-05-22 Sandisk Technologies Llc Techniques for reducing read disturb in partially written blocks of non-volatile memory
US9349479B1 (en) 2014-11-18 2016-05-24 Sandisk Technologies Inc. Boundary word line operation in nonvolatile memory
US9449700B2 (en) 2015-02-13 2016-09-20 Sandisk Technologies Llc Boundary word line search and open block read methods with reduced read disturb
US9450023B1 (en) 2015-04-08 2016-09-20 Sandisk Technologies Llc Vertical bit line non-volatile memory with recessed word lines
US9653154B2 (en) 2015-09-21 2017-05-16 Sandisk Technologies Llc Write abort detection for multi-state memories
US11556416B2 (en) 2021-05-05 2023-01-17 Apple Inc. Controlling memory readout reliability and throughput by adjusting distance between read thresholds
US11847342B2 (en) 2021-07-28 2023-12-19 Apple Inc. Efficient transfer of hard data and confidence levels in reading a nonvolatile memory

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0617363B1 (de) 1989-04-13 2000-01-26 SanDisk Corporation Austausch von fehlerhaften Speicherzellen einer EEprommatritze
US5172338B1 (en) 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US5272669A (en) 1991-02-20 1993-12-21 Sundisk Corporation Method and structure for programming floating gate memory cells
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
JP2856621B2 (ja) 1993-02-24 1999-02-10 インターナショナル・ビジネス・マシーンズ・コーポレイション 一括消去型不揮発性メモリおよびそれを用いる半導体ディスク装置
US5828601A (en) 1993-12-01 1998-10-27 Advanced Micro Devices, Inc. Programmed reference
US5712179A (en) 1995-10-31 1998-01-27 Sandisk Corporation Method of making triple polysilicon flash EEPROM arrays having a separate erase gate for each row of floating gates
US5717632A (en) 1996-11-27 1998-02-10 Advanced Micro Devices, Inc. Apparatus and method for multiple-level storage in non-volatile memories
US6282145B1 (en) 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
US6103573A (en) 1999-06-30 2000-08-15 Sandisk Corporation Processing techniques for making a dual floating gate EEPROM cell array
US6538922B1 (en) 2000-09-27 2003-03-25 Sandisk Corporation Writable tracking cells

Also Published As

Publication number Publication date
KR20040074979A (ko) 2004-08-26
TW200300227A (en) 2003-05-16
JP4398249B2 (ja) 2010-01-13
EP1440447A1 (de) 2004-07-28
CN1578988B (zh) 2010-04-28
CN1578988A (zh) 2005-02-09
TWI285807B (en) 2007-08-21
WO2003041083A1 (en) 2003-05-15
US6678192B2 (en) 2004-01-13
DE60224552T2 (de) 2009-01-08
DE60224552D1 (de) 2008-02-21
KR101009545B1 (ko) 2011-01-18
US20030086293A1 (en) 2003-05-08
JP2005509226A (ja) 2005-04-07
EP1440447B1 (de) 2008-01-09

Similar Documents

Publication Publication Date Title
ATE383648T1 (de) Fehlerbehandlung für beschreibbare referenz- speicherzellen zum verfolgen von einsatzspannungsdriften
US9645895B2 (en) Data storage device and flash memory control method
KR100634333B1 (ko) 멀티레벨 메모리를 제공하는 방법, 이 방법을 프로세서기반 시스템으로 하여금 수행하도록 하는 인스트럭션을저장하는 매체를 포함하는 제품 및 멀티레벨 메모리
DE60319437D1 (de) Nichtflüchtiger halbleiterspeicher mit zykluszählwerte speichernden grossen löschblöcken
KR960042759A (ko) 불휘발성 반도체 기억 장치
ATE370498T1 (de) Beschreibbare verfolgungszellen
ATE490540T1 (de) Variable programmierung von nicht-flüchtigem speicher
TW200608404A (en) Operating non-volatile memory without read disturb limitations
WO1997012367A1 (en) Multiple writes per a single erase for a nonvolatile memory
TW358208B (en) Non-volatile semiconductor memory for unit and multi-unit operations
RU2008132970A (ru) Портативное устройство хранения данных, содержащее множество модулей флэш-памяти
DE60205266D1 (de) Datenschreibvorrichtung, datenschreibverfahren und programm
TW200710851A (en) Non-volatile memory device, and control method of non-volatile memory device
US7945723B2 (en) Apparatus and method of managing mapping table of non-volatile memory
TW200715291A (en) Semiconductor storage device having memory cell for storing data by using difference in threshold voltage
TW200629292A (en) Nonvolatile storage device and nonvolatile storage system
KR20090014527A (ko) 플래시 메모리 소자의 프로그램 방법
EP0908894A3 (de) Nichtflüchtige Halbleiterspeicheranordnung und Schreibverfahren dafür
CN101916351B (zh) 智能卡多协议自适应方法及智能卡
TW200608402A (en) Semiconductor integrated device, and IC card and portable information terminal using the semiconductor integrated device
US20160098197A1 (en) Nonvolatile memory and method with state encoding and page-by-page programming yielding invariant read points
ATE521970T1 (de) Zurückrollverfahren für eine chipkarte
US8717827B1 (en) Method for the permanently reliable programming of multilevel cells in flash memories
KR970051327A (ko) 데이타 기억 영역의 속성 데이타를 기억하는 속성 데이타 영역과 데이타 기억 영역을 갖는 비휘발성메모리
CN101350224B (zh) 存储器及其程序化方法

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties