ATE525338T1 - Leiterpaste für ein keramisches substrat und elektrischer schaltkreis - Google Patents
Leiterpaste für ein keramisches substrat und elektrischer schaltkreisInfo
- Publication number
- ATE525338T1 ATE525338T1 AT08796035T AT08796035T ATE525338T1 AT E525338 T1 ATE525338 T1 AT E525338T1 AT 08796035 T AT08796035 T AT 08796035T AT 08796035 T AT08796035 T AT 08796035T AT E525338 T1 ATE525338 T1 AT E525338T1
- Authority
- AT
- Austria
- Prior art keywords
- powder
- ceramic substrate
- conductor paste
- electrical circuit
- glass powder
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
- C04B41/5116—Ag or Au
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/88—Metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Structural Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dispersion Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Conductive Materials (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/824,194 US7704416B2 (en) | 2007-06-29 | 2007-06-29 | Conductor paste for ceramic substrate and electric circuit |
PCT/US2008/068459 WO2009006242A1 (en) | 2007-06-29 | 2008-06-27 | Conductor paste for ceramic substrate and electric circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE525338T1 true ATE525338T1 (de) | 2011-10-15 |
Family
ID=39764755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT08796035T ATE525338T1 (de) | 2007-06-29 | 2008-06-27 | Leiterpaste für ein keramisches substrat und elektrischer schaltkreis |
Country Status (8)
Country | Link |
---|---|
US (3) | US7704416B2 (de) |
EP (1) | EP2164822B1 (de) |
JP (1) | JP5303552B2 (de) |
KR (1) | KR20100029142A (de) |
CN (1) | CN101720311A (de) |
AT (1) | ATE525338T1 (de) |
TW (1) | TW200919492A (de) |
WO (1) | WO2009006242A1 (de) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7704416B2 (en) * | 2007-06-29 | 2010-04-27 | E.I. Du Pont De Nemours And Company | Conductor paste for ceramic substrate and electric circuit |
US20090211626A1 (en) * | 2008-02-26 | 2009-08-27 | Hideki Akimoto | Conductive paste and grid electrode for silicon solar cells |
FR2942517B1 (fr) * | 2009-02-24 | 2015-07-03 | Saint Gobain Ct Recherches | Materiau compliant. |
FR2942515B1 (fr) * | 2009-02-24 | 2015-07-03 | Saint Gobain Ct Recherches | Dispositif d'assemblage. |
FR2942471A1 (fr) | 2009-02-24 | 2010-08-27 | Saint Gobain Ct Recherches | Piece ceramique revetue. |
FR2942516B1 (fr) | 2009-02-24 | 2015-07-03 | Saint Gobain Ct Recherches | Assemblage affleurant. |
JP5532512B2 (ja) * | 2009-02-24 | 2014-06-25 | 日本電気硝子株式会社 | 電極形成用ガラス組成物および電極形成材料 |
US20130284256A1 (en) * | 2009-04-09 | 2013-10-31 | E I Du Pont De Nemours And Company | Lead-free conductive paste composition and semiconductor devices made therewith |
CN102123961A (zh) * | 2009-08-07 | 2011-07-13 | Lg化学株式会社 | 制备硅太阳能电池的无铅玻璃料粉末、其制备方法、包含其的金属膏组合物和硅太阳能电池 |
SG2014008387A (en) * | 2009-11-16 | 2014-05-29 | Heraeus Precious Metals North America Conshohocken Llc | Electroconductive paste composition |
US20110256658A1 (en) * | 2010-02-05 | 2011-10-20 | Hitachi Chemical Company, Ltd. | Method for producing photovoltaic cell |
US20110195540A1 (en) * | 2010-02-05 | 2011-08-11 | Hitachi Chemical Company, Ltd. | Composition for forming p-type diffusion layer, method for forming p-type diffusion layer, and method for producing photovoltaic cell |
JP5246808B2 (ja) * | 2010-04-07 | 2013-07-24 | 太陽ホールディングス株式会社 | 導電ペースト及び導電パターン |
KR101311098B1 (ko) * | 2010-04-07 | 2013-09-25 | 오꾸노 케미칼 인더스트리즈 컴파니,리미티드 | 도전 페이스트 및 도전 패턴 |
CN102270513B (zh) * | 2010-06-03 | 2013-05-08 | 西安宏星电子浆料科技有限责任公司 | 氧化铝基板使用的厚膜导体浆料及其制备方法 |
US20130161569A1 (en) * | 2010-08-17 | 2013-06-27 | Kentaro Ishihara | Glass for use in forming electrodes, and electrode-forming material using same |
CN102157221A (zh) * | 2011-03-28 | 2011-08-17 | 彩虹集团公司 | 一种环保型半导体电容器用电极银浆的浆制备方法 |
CN103165217B (zh) * | 2011-12-14 | 2016-04-06 | 上海宝银电子材料有限公司 | 一种云母片电容器用导电银浆及其制备方法 |
CN103165213B (zh) * | 2011-12-15 | 2016-01-06 | 上海宝银电子材料有限公司 | 一种客车前挡玻璃用导电银浆及其制备方法 |
CN103165223B (zh) * | 2011-12-15 | 2016-05-11 | 上海宝银电子材料有限公司 | 一种ptc热敏电阻用高温烧结导电银浆及其制备方法 |
US9039942B2 (en) | 2011-12-21 | 2015-05-26 | E I Du Pont De Nemours And Company | Lead-free conductive paste composition and semiconductor devices made therewith |
TWI425894B (zh) * | 2011-12-26 | 2014-02-01 | Vin Cen Shi | 陶瓷基板漸縮凹陷區域之導電層附著加工方法及導電膠組成物 |
CN103187490B (zh) * | 2011-12-31 | 2016-04-20 | 谢文圣 | 陶瓷基板凹陷区域的导电层附着加工方法及导电胶组成物 |
CN104126226B (zh) * | 2012-02-14 | 2018-05-04 | 三菱综合材料株式会社 | 焊接结构、功率模块、带散热器的功率模块用基板及其制造方法以及焊料基底层形成用膏 |
AT512525B1 (de) | 2012-05-04 | 2013-09-15 | Mikroelektronik Ges Mit Beschraenkter Haftung Ab | Leiterplatte, insbesondere für ein Leistungselektronikmodul, umfassend ein elektrisch leitfähiges Substrat |
US9615452B1 (en) | 2012-05-10 | 2017-04-04 | Cree Fayetteville, Inc. | Silver filled trench substrate for high power and/or high temperature electronics |
US9245663B2 (en) * | 2012-10-10 | 2016-01-26 | E I Du Pont De Nemours And Company | Thick film silver paste and its use in the manufacture of semiconductor devices |
CN109336645A (zh) * | 2013-06-05 | 2019-02-15 | 陶瓷技术有限责任公司 | 在陶瓷基材上的金属层 |
CN103366858B (zh) * | 2013-07-08 | 2015-10-14 | 广东羚光新材料股份有限公司 | 一种led灯氧化铝基座用银浆及其应用 |
WO2015039023A1 (en) * | 2013-09-16 | 2015-03-19 | Heraeus Precious Metals North America Conshohocken Llc | Electroconductive paste with adhesion promoting glass |
CN103996430A (zh) * | 2014-04-24 | 2014-08-20 | 安徽为民磁力科技有限公司 | 一种高导电性pcb电路板银浆及其制备方法 |
CN104078096A (zh) * | 2014-06-04 | 2014-10-01 | 乐凯特科技铜陵有限公司 | 一种低成本印刷电路板银浆及其制备方法 |
CN104078099A (zh) * | 2014-06-04 | 2014-10-01 | 乐凯特科技铜陵有限公司 | 一种环保pcb电路板导电银浆及其制备方法 |
KR101682939B1 (ko) * | 2014-10-08 | 2016-12-06 | 김강 | 저온 소결 가능한 도전성 접착제 |
US10784383B2 (en) | 2015-08-07 | 2020-09-22 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
TWI585055B (zh) * | 2016-03-29 | 2017-06-01 | 中國製釉股份有限公司 | 玻璃材料、螢光複合材料、與發光裝置 |
CN106082671B (zh) * | 2016-06-22 | 2019-01-29 | 丽水学院 | 龙泉青瓷青釉、龙泉青瓷及其制备方法 |
US11228080B2 (en) | 2018-11-07 | 2022-01-18 | Dupont Electronics, Inc. | Dielectric filter and method for manufacturing the same |
CN110400651B (zh) * | 2019-06-28 | 2021-07-30 | 云南大学 | 一种导电银浆料及其制备方法 |
CN110942840A (zh) * | 2019-12-13 | 2020-03-31 | 新昌中国计量大学企业创新研究院有限公司 | 用于氮化铝衬底的无铅铜导体浆料 |
CN111863312B (zh) * | 2020-09-04 | 2022-03-29 | 西安宏星电子浆料科技股份有限公司 | 一种5g陶瓷介质滤波器用喷涂型银浆及其制备方法 |
CN114049982B (zh) * | 2021-11-23 | 2024-06-07 | 无锡帝科电子材料股份有限公司 | 一种陶瓷滤波器用导电银浆及其制备方法 |
CN114590999B (zh) * | 2022-01-20 | 2023-05-05 | 广西科技大学 | 一种低熔点无铅玻璃粉及其制备方法 |
CN115838303B (zh) * | 2023-02-22 | 2023-04-28 | 西安石油大学 | 一种氮化铝陶瓷用银浆 |
CN116525173B (zh) * | 2023-05-09 | 2024-07-16 | 湖南特发新材料有限公司 | 一种不锈钢基板大功率厚膜银铂钨电阻浆料、烧制方法和应用 |
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JPH10340622A (ja) | 1997-06-05 | 1998-12-22 | Tanaka Kikinzoku Kogyo Kk | 導体ペースト |
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JP2000048642A (ja) * | 1998-07-24 | 2000-02-18 | Murata Mfg Co Ltd | 導電性ペースト及びガラス回路基板 |
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JP4327975B2 (ja) * | 2000-02-25 | 2009-09-09 | 大日本印刷株式会社 | 導体インキ |
JP3901135B2 (ja) * | 2001-01-24 | 2007-04-04 | 株式会社ノリタケカンパニーリミテド | 導体ペースト |
JP2002246729A (ja) * | 2001-02-15 | 2002-08-30 | Nippon Carbide Ind Co Inc | 電極基板の製造方法 |
CN1316509C (zh) * | 2001-09-06 | 2007-05-16 | 诺利塔克股份有限公司 | 导体组合物及其制造方法 |
DE60213628T2 (de) | 2001-10-09 | 2007-10-11 | E.I. Dupont De Nemours And Co., Wilmington | Dickfilm-leiterzusammensetzungen zur verwendung auf alumniumnitridsubstraten |
US6815039B2 (en) * | 2002-02-21 | 2004-11-09 | Bei Technologies, Inc. | Resistance element for potentiometric devices, and method of manufacture |
US7494607B2 (en) * | 2005-04-14 | 2009-02-24 | E.I. Du Pont De Nemours And Company | Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom |
US20080230119A1 (en) * | 2007-03-22 | 2008-09-25 | Hideki Akimoto | Paste for back contact-type solar cell |
US7704416B2 (en) * | 2007-06-29 | 2010-04-27 | E.I. Du Pont De Nemours And Company | Conductor paste for ceramic substrate and electric circuit |
JP2011514432A (ja) * | 2007-09-07 | 2011-05-06 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 銀および少なくとも2種の非銀含有元素を含有する多元素合金粉末 |
-
2007
- 2007-06-29 US US11/824,194 patent/US7704416B2/en active Active
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2008
- 2008-06-27 TW TW097124431A patent/TW200919492A/zh unknown
- 2008-06-27 KR KR1020107002227A patent/KR20100029142A/ko active IP Right Grant
- 2008-06-27 CN CN200880021122A patent/CN101720311A/zh active Pending
- 2008-06-27 WO PCT/US2008/068459 patent/WO2009006242A1/en active Application Filing
- 2008-06-27 JP JP2010515159A patent/JP5303552B2/ja not_active Expired - Fee Related
- 2008-06-27 EP EP08796035A patent/EP2164822B1/de not_active Revoked
- 2008-06-27 AT AT08796035T patent/ATE525338T1/de not_active IP Right Cessation
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2010
- 2010-03-09 US US12/719,961 patent/US7897066B2/en active Active
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Also Published As
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US20090004369A1 (en) | 2009-01-01 |
US7897066B2 (en) | 2011-03-01 |
EP2164822A1 (de) | 2010-03-24 |
JP2010532586A (ja) | 2010-10-07 |
EP2164822B1 (de) | 2011-09-21 |
TW200919492A (en) | 2009-05-01 |
US20100155117A1 (en) | 2010-06-24 |
US7704416B2 (en) | 2010-04-27 |
US20110114898A1 (en) | 2011-05-19 |
CN101720311A (zh) | 2010-06-02 |
US8043536B2 (en) | 2011-10-25 |
WO2009006242A1 (en) | 2009-01-08 |
JP5303552B2 (ja) | 2013-10-02 |
KR20100029142A (ko) | 2010-03-15 |
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