ATE509364T1 - Induktiv gekoppelter niederdruck-plasmareaktor für plasmen hoher dichte - Google Patents

Induktiv gekoppelter niederdruck-plasmareaktor für plasmen hoher dichte

Info

Publication number
ATE509364T1
ATE509364T1 AT99908542T AT99908542T ATE509364T1 AT E509364 T1 ATE509364 T1 AT E509364T1 AT 99908542 T AT99908542 T AT 99908542T AT 99908542 T AT99908542 T AT 99908542T AT E509364 T1 ATE509364 T1 AT E509364T1
Authority
AT
Austria
Prior art keywords
radiator
plasma reactor
chamber
plasms
low pressure
Prior art date
Application number
AT99908542T
Other languages
English (en)
Inventor
Guy Blalock
Kevin Donohoe
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE509364T1 publication Critical patent/ATE509364T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • H01J37/32183Matching circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
AT99908542T 1998-02-26 1999-02-26 Induktiv gekoppelter niederdruck-plasmareaktor für plasmen hoher dichte ATE509364T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/031,400 US6516742B1 (en) 1998-02-26 1998-02-26 Apparatus for improved low pressure inductively coupled high density plasma reactor
PCT/US1999/004325 WO1999044219A1 (en) 1998-02-26 1999-02-26 Low pressure inductively coupled high density plasma reactor

Publications (1)

Publication Number Publication Date
ATE509364T1 true ATE509364T1 (de) 2011-05-15

Family

ID=21859248

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99908542T ATE509364T1 (de) 1998-02-26 1999-02-26 Induktiv gekoppelter niederdruck-plasmareaktor für plasmen hoher dichte

Country Status (7)

Country Link
US (4) US6516742B1 (de)
EP (1) EP1057206B1 (de)
JP (1) JP3650332B2 (de)
KR (1) KR100373662B1 (de)
AT (1) ATE509364T1 (de)
AU (1) AU2794999A (de)
WO (1) WO1999044219A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6516742B1 (en) * 1998-02-26 2003-02-11 Micron Technology, Inc. Apparatus for improved low pressure inductively coupled high density plasma reactor
US6123862A (en) * 1998-04-24 2000-09-26 Micron Technology, Inc. Method of forming high aspect ratio apertures
US6936144B2 (en) 2000-02-24 2005-08-30 Ccr Gmbh Beschichtungstechnologie High frequency plasma source
CA2401251C (en) * 2000-02-24 2009-04-21 Ccr Gmbh High frequency matching network
US6890863B1 (en) 2000-04-27 2005-05-10 Micron Technology, Inc. Etchant and method of use
US7232767B2 (en) * 2003-04-01 2007-06-19 Mattson Technology, Inc. Slotted electrostatic shield modification for improved etch and CVD process uniformity
US7042311B1 (en) * 2003-10-10 2006-05-09 Novellus Systems, Inc. RF delivery configuration in a plasma processing system
US7354561B2 (en) * 2004-11-17 2008-04-08 Battelle Energy Alliance, Llc Chemical reactor and method for chemically converting a first material into a second material
US7713430B2 (en) * 2006-02-23 2010-05-11 Micron Technology, Inc. Using positive DC offset of bias RF to neutralize charge build-up of etch features
EP2087778A4 (de) 2006-08-22 2010-11-17 Mattson Tech Inc Induktive plasmaquelle mit hohem koppelwirkungsgrad
US8992725B2 (en) * 2006-08-28 2015-03-31 Mattson Technology, Inc. Plasma reactor with inductie excitation of plasma and efficient removal of heat from the excitation coil
US8591821B2 (en) * 2009-04-23 2013-11-26 Battelle Energy Alliance, Llc Combustion flame-plasma hybrid reactor systems, and chemical reactant sources
US8822913B2 (en) * 2011-12-06 2014-09-02 Fei Company Inductively-coupled plasma ion source for use with a focused ion beam column with selectable ions

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57149734A (en) * 1981-03-12 1982-09-16 Anelva Corp Plasma applying working device
JPS5893242A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 窒化膜形成方法
JPH06104898B2 (ja) * 1988-01-13 1994-12-21 忠弘 大見 減圧表面処理装置
US4918031A (en) 1988-12-28 1990-04-17 American Telephone And Telegraph Company,At&T Bell Laboratories Processes depending on plasma generation using a helical resonator
US5126028A (en) 1989-04-17 1992-06-30 Materials Research Corporation Sputter coating process control method and apparatus
DE3923661A1 (de) * 1989-07-18 1991-01-24 Leybold Ag Schaltungsanordnung fuer die anpassung der impedanz einer plasmastrecke an einen hochfrequenzgenerator
US5223457A (en) * 1989-10-03 1993-06-29 Applied Materials, Inc. High-frequency semiconductor wafer processing method using a negative self-bias
US6068784A (en) * 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
JP2529031B2 (ja) 1991-01-30 1996-08-28 株式会社芝浦製作所 スパッタリング装置
US5888414A (en) * 1991-06-27 1999-03-30 Applied Materials, Inc. Plasma reactor and processes using RF inductive coupling and scavenger temperature control
KR0184675B1 (ko) 1991-07-24 1999-04-15 이노우에 쥰이치 챔버내의 전극에 있어서의 실제의 rf파워를 검출 및 제어 가능한 플라즈마 처리장치
US5234529A (en) 1991-10-10 1993-08-10 Johnson Wayne L Plasma generating apparatus employing capacitive shielding and process for using such apparatus
US5849136A (en) * 1991-10-11 1998-12-15 Applied Materials, Inc. High frequency semiconductor wafer processing apparatus and method
US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
US5417826A (en) 1992-06-15 1995-05-23 Micron Technology, Inc. Removal of carbon-based polymer residues with ozone, useful in the cleaning of plasma reactors
JPH0661185A (ja) * 1992-08-06 1994-03-04 Tokyo Electron Ltd プラズマ処理装置
US5664066A (en) 1992-11-09 1997-09-02 The United States Of America As Represented By The United States Department Of Energy Intelligent system for automatic feature detection and selection or identification
JPH0732078B2 (ja) * 1993-01-14 1995-04-10 株式会社アドテック 高周波プラズマ用電源及びインピーダンス整合装置
US5433812A (en) 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US5401350A (en) * 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
US5815047A (en) * 1993-10-29 1998-09-29 Applied Materials, Inc. Fast transition RF impedance matching network for plasma reactor ignition
JPH07273100A (ja) 1994-03-31 1995-10-20 Toshiba Corp 半導体装置の熱処理方法及び熱処理装置
EP0685873B1 (de) 1994-06-02 1998-12-16 Applied Materials, Inc. Induktiv gekoppelter Plasmareaktor mit einer Elektrode zur Erleichterung der Plasmazündung
US5540800A (en) 1994-06-23 1996-07-30 Applied Materials, Inc. Inductively coupled high density plasma reactor for plasma assisted materials processing
JPH0817799A (ja) * 1994-06-28 1996-01-19 Plasma Syst:Kk プラズマ処理装置
JPH0878398A (ja) 1994-09-05 1996-03-22 Sony Corp マイクロ波プラズマ処理装置
JPH0888097A (ja) 1994-09-16 1996-04-02 Fujitsu Ltd プラズマ装置用マッチング回路
US5688357A (en) * 1995-02-15 1997-11-18 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
US5523261A (en) 1995-02-28 1996-06-04 Micron Technology, Inc. Method of cleaning high density inductively coupled plasma chamber using capacitive coupling
EP0743671A3 (de) * 1995-05-19 1997-07-16 Hitachi Ltd Verfahren und Vorrichtung für einer Plasmabearbeitungsgerät
US5650032A (en) * 1995-06-06 1997-07-22 International Business Machines Corporation Apparatus for producing an inductive plasma for plasma processes
US5629653A (en) * 1995-07-07 1997-05-13 Applied Materials, Inc. RF match detector circuit with dual directional coupler
TW279240B (en) * 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
JPH0997783A (ja) * 1995-09-28 1997-04-08 Nec Corp プラズマ処理装置
US5573595A (en) * 1995-09-29 1996-11-12 Lam Research Corporation Methods and apparatus for generating plasma
JPH09202968A (ja) * 1996-01-26 1997-08-05 Canon Inc スパッタ装置及び堆積膜形成方法
KR970064327A (ko) 1996-02-27 1997-09-12 모리시다 요이치 고주파 전력 인가장치, 플라즈마 발생장치, 플라즈마 처리장치, 고주파 전력 인가방법, 플라즈마 발생방법 및 플라즈마 처리방법
US5689215A (en) * 1996-05-23 1997-11-18 Lam Research Corporation Method of and apparatus for controlling reactive impedances of a matching network connected between an RF source and an RF plasma processor
US6353206B1 (en) * 1996-05-30 2002-03-05 Applied Materials, Inc. Plasma system with a balanced source
US5759280A (en) * 1996-06-10 1998-06-02 Lam Research Corporation Inductively coupled source for deriving substantially uniform plasma flux
US5800619A (en) * 1996-06-10 1998-09-01 Lam Research Corporation Vacuum plasma processor having coil with minimum magnetic field in its center
JPH1079561A (ja) 1996-09-05 1998-03-24 Oki Electric Ind Co Ltd 配線基板および配線基板の形成方法
TW403959B (en) 1996-11-27 2000-09-01 Hitachi Ltd Plasma treatment device
TW376547B (en) * 1997-03-27 1999-12-11 Matsushita Electric Ind Co Ltd Method and apparatus for plasma processing
US6207027B1 (en) * 1997-05-07 2001-03-27 Applied Materials, Inc. Method to reduce overhead time in an ion metal plasma process
US6109206A (en) * 1997-05-29 2000-08-29 Applied Materials, Inc. Remote plasma source for chamber cleaning
US6516742B1 (en) * 1998-02-26 2003-02-11 Micron Technology, Inc. Apparatus for improved low pressure inductively coupled high density plasma reactor
KR100542459B1 (ko) * 1999-03-09 2006-01-12 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마처리장치 및 플라즈마처리방법
US6424232B1 (en) * 1999-11-30 2002-07-23 Advanced Energy's Voorhees Operations Method and apparatus for matching a variable load impedance with an RF power generator impedance
US6716303B1 (en) * 2000-10-13 2004-04-06 Lam Research Corporation Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same
JP3787079B2 (ja) * 2001-09-11 2006-06-21 株式会社日立製作所 プラズマ処理装置

Also Published As

Publication number Publication date
JP2002505517A (ja) 2002-02-19
US6939813B2 (en) 2005-09-06
JP3650332B2 (ja) 2005-05-18
US20030041805A1 (en) 2003-03-06
AU2794999A (en) 1999-09-15
US6475814B1 (en) 2002-11-05
US6516742B1 (en) 2003-02-11
KR20010041386A (ko) 2001-05-15
KR100373662B1 (ko) 2003-02-26
US20050022935A1 (en) 2005-02-03
EP1057206A1 (de) 2000-12-06
EP1057206B1 (de) 2011-05-11
WO1999044219A1 (en) 1999-09-02

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