ATE431649T1 - Anbringstrukturen für kristallresonatoren mit geringer beschleunigungsempfindlichkeit - Google Patents

Anbringstrukturen für kristallresonatoren mit geringer beschleunigungsempfindlichkeit

Info

Publication number
ATE431649T1
ATE431649T1 AT03729173T AT03729173T ATE431649T1 AT E431649 T1 ATE431649 T1 AT E431649T1 AT 03729173 T AT03729173 T AT 03729173T AT 03729173 T AT03729173 T AT 03729173T AT E431649 T1 ATE431649 T1 AT E431649T1
Authority
AT
Austria
Prior art keywords
crystal resonators
sensitivity
stresses
mounting structures
acceleration sensitivity
Prior art date
Application number
AT03729173T
Other languages
English (en)
Inventor
Peter Morley
Reichl Haskell
Daniel Stevens
Original Assignee
Capital Formation Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Capital Formation Inc filed Critical Capital Formation Inc
Application granted granted Critical
Publication of ATE431649T1 publication Critical patent/ATE431649T1/de

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/0504Holders; Supports for bulk acoustic wave devices
    • H03H9/0514Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Apparatuses For Generation Of Mechanical Vibrations (AREA)
AT03729173T 2002-05-28 2003-05-28 Anbringstrukturen für kristallresonatoren mit geringer beschleunigungsempfindlichkeit ATE431649T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US38383502P 2002-05-28 2002-05-28
PCT/US2003/016722 WO2003100876A2 (en) 2002-05-28 2003-05-28 Low acceleration sensitivity mounting structures for crystal resonators

Publications (1)

Publication Number Publication Date
ATE431649T1 true ATE431649T1 (de) 2009-05-15

Family

ID=29584602

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03729173T ATE431649T1 (de) 2002-05-28 2003-05-28 Anbringstrukturen für kristallresonatoren mit geringer beschleunigungsempfindlichkeit

Country Status (8)

Country Link
US (1) US6984925B2 (de)
EP (1) EP1535350B1 (de)
JP (1) JP2005528829A (de)
AT (1) ATE431649T1 (de)
AU (1) AU2003234672A1 (de)
DE (1) DE60327633D1 (de)
IL (1) IL165327A (de)
WO (1) WO2003100876A2 (de)

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US7667369B2 (en) * 2006-11-01 2010-02-23 Delaware Capital Formation, Inc. High sensitivity microsensors based on flexure induced frequency effects
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JP2010171536A (ja) * 2009-01-20 2010-08-05 Seiko Instruments Inc 圧電振動子
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US8610517B2 (en) 2010-11-02 2013-12-17 Raytheon Company Surface acoustic wave resonator mounting with low acceleration sensitivity
JP5742620B2 (ja) * 2011-09-16 2015-07-01 株式会社大真空 水晶振動子および水晶振動子の製造方法
US9667218B2 (en) 2012-01-30 2017-05-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator comprising feedback circuit
US9154103B2 (en) 2012-01-30 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator
US9667220B2 (en) 2012-01-30 2017-05-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator comprising heater and sense resistors
US9608592B2 (en) 2014-01-21 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic wave resonator (FBAR) having stress-relief
US8810023B2 (en) * 2012-07-06 2014-08-19 Texas Instruments Incorporated Cantilever packages for sensor MEMS (micro-electro-mechanical system)
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EP3047573B1 (de) 2013-09-22 2020-11-04 Telefonaktiebolaget LM Ericsson (publ) Pll und adaptives kompensationsverfahren in einem pll
JP6349722B2 (ja) * 2013-12-25 2018-07-04 セイコーエプソン株式会社 振動デバイス、電子機器、および移動体
US9977097B1 (en) 2014-02-21 2018-05-22 Hrl Laboratories, Llc Micro-scale piezoelectric resonating magnetometer
CN104122440B (zh) * 2014-07-24 2016-09-14 中国电子科技集团公司第二十九研究所 晶振频率漂移感知方法
JP6442899B2 (ja) * 2014-07-30 2018-12-26 セイコーエプソン株式会社 振動デバイス、電子機器、および移動体
US10175307B1 (en) 2016-01-15 2019-01-08 Hrl Laboratories, Llc FM demodulation system for quartz MEMS magnetometer
CN108473302B (zh) * 2016-01-28 2023-06-02 时立方股份有限公司 隔热平台系统及方法
DE102018222730A1 (de) 2018-12-21 2020-06-25 Robert Bosch Gmbh Mikromechanisches Bauteil und Herstellungsverfahren für ein mikromechanisches Bauteil

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Also Published As

Publication number Publication date
WO2003100876A2 (en) 2003-12-04
IL165327A (en) 2009-09-01
US20040021402A1 (en) 2004-02-05
JP2005528829A (ja) 2005-09-22
EP1535350A4 (de) 2007-05-09
US6984925B2 (en) 2006-01-10
EP1535350B1 (de) 2009-05-13
IL165327A0 (en) 2006-01-15
EP1535350A2 (de) 2005-06-01
WO2003100876A3 (en) 2004-01-29
AU2003234672A1 (en) 2003-12-12
DE60327633D1 (de) 2009-06-25

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