JP2013511881A - バルク弾性波共振器及びその製造方法 - Google Patents
バルク弾性波共振器及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 30
- 238000012545 processing Methods 0.000 claims abstract description 13
- 230000000694 effects Effects 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000708 deep reactive-ion etching Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000013461 design Methods 0.000 abstract description 14
- 239000011800 void material Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 6
- 238000003892 spreading Methods 0.000 description 4
- 238000009966 trimming Methods 0.000 description 4
- 230000008602 contraction Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000001447 compensatory effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/008—Manufacturing resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/06—Cavity resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/08—Strip line resonators
- H01P7/082—Microstripline resonators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
- H03H3/0076—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2436—Disk resonators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02283—Vibrating means
- H03H2009/0233—Vibrating means comprising perforations
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H2009/241—Bulk-mode MEMS resonators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H2009/2442—Square resonators
Abstract
【選択図】図3a
Description
共振器の挙動に対するプロセスばらつきの影響が、自己組織的に大幅に低減される。
高価なトリミング機器の必要がない。
プロセスばらつきを詳細に把握する必要がない。
加工された全コンポーネントの測定が回避され、駆動集積回路が簡略化される。
Claims (13)
- 少なくとも1つの空隙が設けられた共振器部分を備えるバルク弾性波(BAW)共振器であって、前記空隙は、前記共振器部分に連続閉路を形成するトレンチの形態を有することを特徴とする共振器。
- 請求項1に記載の共振器において、前記空隙は楕円形、特に円形であることを特徴とする共振器。
- 請求項1又は2に記載の共振器において、前記空隙は矩形、特に正方形であることを特徴とする共振器。
- 請求項1〜3のいずれか1項に記載の共振器において、前記空隙は、前記共振器部分の少なくとも1つの横方向中心軸、好ましくは両方の横方向中心軸に対して対称に位置付けられることを特徴とする共振器。
- 請求項1〜4のいずれか1項に記載の共振器において、前記空隙の寸法は、前記共振器部分の対応の寸法の15%〜35%、特に20%〜30%、好ましくは約25%であることを特徴とする共振器。
- 請求項1〜5のいずれか1項に記載の共振器において、前記空隙は、前記共振器部分に所定のパターンで複数設けられ、該パターンは、前記共振器部分の少なくとも1つの横方向中心軸に関して対称であることを特徴とする共振器。
- 請求項1〜6のいずれか1項に記載の共振器において、前記共振器部分は矩形、特に正方形、又は楕円形、特に円形であることを特徴とする共振器。
- 請求項1〜7のいずれか1項に記載の共振器において、該共振器は、シリコンウェーハ、該シリコンウェーハに形成されて前記共振器部分を画定する第1トレンチ、及び前記シリコンウェーハに形成されて前記空隙を画定する第2トレンチを備えることを特徴とする共振器。
- 請求項1〜8のいずれか1項に記載の共振器において、前記空隙のサイズ及び/又は形状は、前記共振器の共振周波数に対するプロセスばらつきの影響を最小化するよう合わせられることを特徴とする共振器。
- 請求項1〜9のいずれか1項に記載の共振器において、前記空隙及び前記共振器部分の外側境界は、エッチングステップ等の同じ加工ステップで形成されることを特徴とする共振器。
- 基板を準備するステップと、
該基板上に外形寸法を有する共振器部分を作製するように前記基板を加工するステップと
を含むバルク弾性波(BAW)共振器を製造する方法であって、
前記共振器部分の前記外形寸法の作製に使用されるのと同じ加工ステップで、前記共振器部分に少なくとも1つの空隙を作製するステップ
を含むことを特徴とする方法。 - 請求項11に記載の方法において、前記加工するステップは、エッチングステップ、好ましくはディープ反応性イオンエッチング(DRIE)ステップであることを特徴とする方法。
- 請求項11又は12に記載の方法において、請求項1〜10のいずれか1項に記載の共振器を作製することを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20096201A FI20096201A0 (fi) | 2009-11-19 | 2009-11-19 | Massa-aaltoresonaattori ja menetelmä sen valmistamiseksi |
FI20096201 | 2009-11-19 | ||
PCT/FI2010/050935 WO2011061402A1 (en) | 2009-11-19 | 2010-11-19 | Bulk acoustic wave resonator and method of manufacturing thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2013511881A true JP2013511881A (ja) | 2013-04-04 |
Family
ID=41395248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012539375A Withdrawn JP2013511881A (ja) | 2009-11-19 | 2010-11-19 | バルク弾性波共振器及びその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20120280758A1 (ja) |
EP (1) | EP2502346A4 (ja) |
JP (1) | JP2013511881A (ja) |
KR (1) | KR20120101080A (ja) |
CN (1) | CN102742156A (ja) |
FI (1) | FI20096201A0 (ja) |
WO (1) | WO2011061402A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015108989A1 (en) * | 2014-01-14 | 2015-07-23 | Qualtre, Inc. | Mems apparatus with intentional geometrical imperfections for alignment of resonant modes and to compensate for manufacturing variations |
US9876483B2 (en) * | 2014-03-28 | 2018-01-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator device including trench for providing stress relief |
US10352904B2 (en) | 2015-10-26 | 2019-07-16 | Qorvo Us, Inc. | Acoustic resonator devices and methods providing patterned functionalization areas |
CN108474764B (zh) * | 2015-11-06 | 2021-12-10 | Qorvo美国公司 | 声学谐振器设备和提供气密性及表面功能化的制造方法 |
US10267770B2 (en) | 2016-07-27 | 2019-04-23 | Qorvo Us, Inc. | Acoustic resonator devices and methods with noble metal layer for functionalization |
CN109642891A (zh) | 2016-08-11 | 2019-04-16 | Qorvo美国公司 | 具有受控放置的功能化材料的声谐振器装置 |
CN114301406B (zh) * | 2021-12-29 | 2024-04-02 | 苏州达波新材科技有限公司 | 空腔型压电单晶体声波谐振器及其制备方法 |
CN114894229B (zh) * | 2022-04-26 | 2024-05-03 | 武汉敏声新技术有限公司 | 一种薄膜体声波传感器及其制备方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004279384A (ja) * | 2003-03-19 | 2004-10-07 | Sumitomo Precision Prod Co Ltd | 振動子の製造方法、振動子及びフォトマスク |
US6894586B2 (en) * | 2003-05-21 | 2005-05-17 | The Regents Of The University Of California | Radial bulk annular resonator using MEMS technology |
US20050073078A1 (en) * | 2003-10-03 | 2005-04-07 | Markus Lutz | Frequency compensated oscillator design for process tolerances |
US7205867B2 (en) * | 2005-05-19 | 2007-04-17 | Robert Bosch Gmbh | Microelectromechanical resonator structure, and method of designing, operating and using same |
JP2007181087A (ja) * | 2005-12-28 | 2007-07-12 | Toshiba Corp | 薄膜圧電共振器およびフィルタ回路 |
US7839239B2 (en) * | 2006-03-09 | 2010-11-23 | Nxp B.V. | MEMS resonator having at least one resonator mode shape |
US7616077B1 (en) | 2007-03-22 | 2009-11-10 | Sandia Corporation | Microelectromechanical resonator and method for fabrication |
US7750758B2 (en) * | 2007-09-05 | 2010-07-06 | Robert Bosch Gmbh | Multi-ring resonator system and method |
EP2239845A1 (en) * | 2009-04-09 | 2010-10-13 | Nxp B.V. | MEMS resonator |
-
2009
- 2009-11-19 FI FI20096201A patent/FI20096201A0/fi not_active Application Discontinuation
-
2010
- 2010-11-19 US US13/508,997 patent/US20120280758A1/en not_active Abandoned
- 2010-11-19 WO PCT/FI2010/050935 patent/WO2011061402A1/en active Application Filing
- 2010-11-19 EP EP10831206.7A patent/EP2502346A4/en not_active Withdrawn
- 2010-11-19 CN CN2010800523146A patent/CN102742156A/zh active Pending
- 2010-11-19 JP JP2012539375A patent/JP2013511881A/ja not_active Withdrawn
- 2010-11-19 KR KR1020127015895A patent/KR20120101080A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US20120280758A1 (en) | 2012-11-08 |
WO2011061402A1 (en) | 2011-05-26 |
EP2502346A1 (en) | 2012-09-26 |
KR20120101080A (ko) | 2012-09-12 |
CN102742156A (zh) | 2012-10-17 |
EP2502346A4 (en) | 2013-08-21 |
FI20096201A0 (fi) | 2009-11-19 |
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