ATE419647T1 - Verfahren zum herstellen einer halbleitervorrichtung - Google Patents

Verfahren zum herstellen einer halbleitervorrichtung

Info

Publication number
ATE419647T1
ATE419647T1 AT04704337T AT04704337T ATE419647T1 AT E419647 T1 ATE419647 T1 AT E419647T1 AT 04704337 T AT04704337 T AT 04704337T AT 04704337 T AT04704337 T AT 04704337T AT E419647 T1 ATE419647 T1 AT E419647T1
Authority
AT
Austria
Prior art keywords
plasma
layer
etching
dicing step
sub
Prior art date
Application number
AT04704337T
Other languages
English (en)
Inventor
Kiyoshi Arita
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Application granted granted Critical
Publication of ATE419647T1 publication Critical patent/ATE419647T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Drying Of Semiconductors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT04704337T 2003-01-23 2004-01-22 Verfahren zum herstellen einer halbleitervorrichtung ATE419647T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003014567A JP3991872B2 (ja) 2003-01-23 2003-01-23 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
ATE419647T1 true ATE419647T1 (de) 2009-01-15

Family

ID=32767407

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04704337T ATE419647T1 (de) 2003-01-23 2004-01-22 Verfahren zum herstellen einer halbleitervorrichtung

Country Status (8)

Country Link
US (1) US6969669B2 (de)
EP (1) EP1586116B1 (de)
JP (1) JP3991872B2 (de)
KR (1) KR101085982B1 (de)
CN (1) CN1306564C (de)
AT (1) ATE419647T1 (de)
DE (1) DE602004018745D1 (de)
WO (1) WO2004066382A1 (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4338650B2 (ja) 2005-01-12 2009-10-07 パナソニック株式会社 半導体チップの製造方法
EP1844495B1 (de) * 2005-01-24 2011-07-27 Panasonic Corporation Herstellungsverfahren für halbleiterchips
JP4275096B2 (ja) 2005-04-14 2009-06-10 パナソニック株式会社 半導体チップの製造方法
JP4275095B2 (ja) 2005-04-14 2009-06-10 パナソニック株式会社 半導体チップの製造方法
JP4288252B2 (ja) * 2005-04-19 2009-07-01 パナソニック株式会社 半導体チップの製造方法
JP4778288B2 (ja) * 2005-09-30 2011-09-21 株式会社山武 圧力波発生装置の製造方法
JP4544231B2 (ja) * 2006-10-06 2010-09-15 パナソニック株式会社 半導体チップの製造方法
JP2008166588A (ja) * 2006-12-28 2008-07-17 Tokyo Electron Ltd チップ切り出し方法及び治具
US8012857B2 (en) * 2007-08-07 2011-09-06 Semiconductor Components Industries, Llc Semiconductor die singulation method
US7989319B2 (en) * 2007-08-07 2011-08-02 Semiconductor Components Industries, Llc Semiconductor die singulation method
US7781310B2 (en) 2007-08-07 2010-08-24 Semiconductor Components Industries, Llc Semiconductor die singulation method
US8859396B2 (en) 2007-08-07 2014-10-14 Semiconductor Components Industries, Llc Semiconductor die singulation method
US9299664B2 (en) 2010-01-18 2016-03-29 Semiconductor Components Industries, Llc Method of forming an EM protected semiconductor die
US8384231B2 (en) 2010-01-18 2013-02-26 Semiconductor Components Industries, Llc Method of forming a semiconductor die
US9165833B2 (en) 2010-01-18 2015-10-20 Semiconductor Components Industries, Llc Method of forming a semiconductor die
US20110175209A1 (en) * 2010-01-18 2011-07-21 Seddon Michael J Method of forming an em protected semiconductor die
US8802545B2 (en) 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US9343365B2 (en) * 2011-03-14 2016-05-17 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8748297B2 (en) 2012-04-20 2014-06-10 Infineon Technologies Ag Methods of forming semiconductor devices by singulating a substrate by removing a dummy fill material
US8946057B2 (en) * 2012-04-24 2015-02-03 Applied Materials, Inc. Laser and plasma etch wafer dicing using UV-curable adhesive film
JP2013251509A (ja) * 2012-06-04 2013-12-12 Tokyo Electron Ltd 基板検査装置
US8969177B2 (en) 2012-06-29 2015-03-03 Applied Materials, Inc. Laser and plasma etch wafer dicing with a double sided UV-curable adhesive film
US9484260B2 (en) 2012-11-07 2016-11-01 Semiconductor Components Industries, Llc Heated carrier substrate semiconductor die singulation method
US9136173B2 (en) 2012-11-07 2015-09-15 Semiconductor Components Industries, Llc Singulation method for semiconductor die having a layer of material along one major surface
CN103060920A (zh) * 2013-01-05 2013-04-24 武汉电信器件有限公司 一种高精度无污染的半导体晶片解理方法
US9299614B2 (en) * 2013-12-10 2016-03-29 Applied Materials, Inc. Method and carrier for dicing a wafer
JP6188587B2 (ja) * 2014-01-15 2017-08-30 株式会社ディスコ ウェーハの分割方法
JP6101227B2 (ja) * 2014-03-17 2017-03-22 株式会社東芝 プラズマダイシング方法およびプラズマダイシング装置
US9418894B2 (en) 2014-03-21 2016-08-16 Semiconductor Components Industries, Llc Electronic die singulation method
US9112050B1 (en) * 2014-05-13 2015-08-18 Applied Materials, Inc. Dicing tape thermal management by wafer frame support ring cooling during plasma dicing
US9385041B2 (en) 2014-08-26 2016-07-05 Semiconductor Components Industries, Llc Method for insulating singulated electronic die
JP6339514B2 (ja) * 2015-03-25 2018-06-06 Ｔｏｗａ株式会社 切断装置及び切断方法
JP2016207737A (ja) * 2015-04-17 2016-12-08 株式会社ディスコ 分割方法
US9559007B1 (en) * 2015-09-30 2017-01-31 Semicondudtor Components Industries, Llc Plasma etch singulated semiconductor packages and related methods
JP6492288B2 (ja) * 2015-10-01 2019-04-03 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
JP6524419B2 (ja) * 2016-02-04 2019-06-05 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
JP6524535B2 (ja) * 2016-03-11 2019-06-05 パナソニックＩｐマネジメント株式会社 素子チップおよびその製造方法
US10366923B2 (en) 2016-06-02 2019-07-30 Semiconductor Components Industries, Llc Method of separating electronic devices having a back layer and apparatus
US10373869B2 (en) 2017-05-24 2019-08-06 Semiconductor Components Industries, Llc Method of separating a back layer on a substrate using exposure to reduced temperature and related apparatus
TWI741262B (zh) * 2018-06-04 2021-10-01 美商帕斯馬舍門有限責任公司 切割晶粒附接膜的方法
KR102133279B1 (ko) * 2018-06-20 2020-07-13 주식회사 엘지화학 회절 격자 도광판용 몰드의 제조방법 및 회절 격자 도광판의 제조방법
CN111112808A (zh) * 2018-10-30 2020-05-08 三星钻石工业股份有限公司 基板分断装置及基板分断方法
JP7210100B2 (ja) * 2018-12-03 2023-01-23 株式会社ディスコ ウェーハの加工方法
JP7296718B2 (ja) * 2018-12-11 2023-06-23 株式会社ディスコ ウェーハの加工方法
US10818551B2 (en) 2019-01-09 2020-10-27 Semiconductor Components Industries, Llc Plasma die singulation systems and related methods
DE102020115687B4 (de) * 2020-06-15 2024-05-16 Infineon Technologies Ag Herstellung von halbleitervorrichtungen durch dünnen und zerteilen

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2538616B1 (fr) 1982-12-28 1986-01-24 Thomson Csf Procede de fabrication collective de diodes hyperfrequence avec encapsulation incorporee et diodes ainsi obtenues
DE19538634C2 (de) 1995-10-17 1997-09-04 Itt Ind Gmbh Deutsche Verfahren zum Vereinzeln von elektronischen Elementen aus einem Halbleiterwafer
DE19505906A1 (de) 1995-02-21 1996-08-22 Siemens Ag Verfahren zum Damage-Ätzen der Rückseite einer Halbleiterscheibe bei geschützter Scheibenvorderseite
US6013534A (en) 1997-07-25 2000-01-11 The United States Of America As Represented By The National Security Agency Method of thinning integrated circuits received in die form
JP3695184B2 (ja) 1998-12-03 2005-09-14 松下電器産業株式会社 プラズマエッチング装置およびプラズマエッチング方法
JP2002093752A (ja) 2000-09-14 2002-03-29 Tokyo Electron Ltd 半導体素子分離方法及び半導体素子分離装置
US6642127B2 (en) * 2001-10-19 2003-11-04 Applied Materials, Inc. Method for dicing a semiconductor wafer

Also Published As

Publication number Publication date
EP1586116B1 (de) 2008-12-31
CN1306564C (zh) 2007-03-21
WO2004066382A1 (en) 2004-08-05
EP1586116A1 (de) 2005-10-19
KR20050093760A (ko) 2005-09-23
JP3991872B2 (ja) 2007-10-17
DE602004018745D1 (de) 2009-02-12
JP2004265902A (ja) 2004-09-24
US6969669B2 (en) 2005-11-29
US20050072766A1 (en) 2005-04-07
CN1701435A (zh) 2005-11-23
KR101085982B1 (ko) 2011-11-22

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