ATE414990T1 - 3-d spiralförmige spule auf einem halbleitermaterial - Google Patents

3-d spiralförmige spule auf einem halbleitermaterial

Info

Publication number
ATE414990T1
ATE414990T1 AT03019916T AT03019916T ATE414990T1 AT E414990 T1 ATE414990 T1 AT E414990T1 AT 03019916 T AT03019916 T AT 03019916T AT 03019916 T AT03019916 T AT 03019916T AT E414990 T1 ATE414990 T1 AT E414990T1
Authority
AT
Austria
Prior art keywords
semiconductor material
spiral coil
turn
turns
substrate
Prior art date
Application number
AT03019916T
Other languages
English (en)
Inventor
Choon-Beng Sia
Kiat Seng Yeo
Shao-Fu Sandford Chu
Cheng Yeow Ng
Kok Wai Chew
Wang Ling Goh
Original Assignee
Chartered Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chartered Semiconductor Mfg filed Critical Chartered Semiconductor Mfg
Application granted granted Critical
Publication of ATE414990T1 publication Critical patent/ATE414990T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/4906—Providing winding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49073—Electromagnet, transformer or inductor by assembling coil and core
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
  • Resistance Heating (AREA)
AT03019916T 2002-09-04 2003-09-02 3-d spiralförmige spule auf einem halbleitermaterial ATE414990T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/131,336 US6841847B2 (en) 2002-09-04 2002-09-04 3-D spiral stacked inductor on semiconductor material

Publications (1)

Publication Number Publication Date
ATE414990T1 true ATE414990T1 (de) 2008-12-15

Family

ID=31713985

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03019916T ATE414990T1 (de) 2002-09-04 2003-09-02 3-d spiralförmige spule auf einem halbleitermaterial

Country Status (6)

Country Link
US (2) US6841847B2 (de)
EP (1) EP1396875B1 (de)
JP (1) JP4505201B2 (de)
AT (1) ATE414990T1 (de)
DE (1) DE60324748D1 (de)
SG (2) SG109527A1 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050104158A1 (en) * 2003-11-19 2005-05-19 Scintera Networks, Inc. Compact, high q inductor for integrated circuit
US7283029B2 (en) * 2004-12-08 2007-10-16 Purdue Research Foundation 3-D transformer for high-frequency applications
US7221251B2 (en) * 2005-03-22 2007-05-22 Acutechnology Semiconductor Air core inductive element on printed circuit board for use in switching power conversion circuitries
US7399696B2 (en) * 2005-08-02 2008-07-15 International Business Machines Corporation Method for high performance inductor fabrication using a triple damascene process with copper BEOL
TWI299556B (en) * 2006-07-07 2008-08-01 Holtek Semiconductor Inc Spiral inductor with high quality factor of integrated circuit
CN101090025B (zh) * 2007-05-25 2012-10-03 威盛电子股份有限公司 一种具有多层结构的螺旋电感元件
JP5578797B2 (ja) * 2009-03-13 2014-08-27 ルネサスエレクトロニクス株式会社 半導体装置
TWI385680B (zh) * 2009-05-19 2013-02-11 Realtek Semiconductor Corp 螺旋電感之堆疊結構
US8143952B2 (en) 2009-10-08 2012-03-27 Qualcomm Incorporated Three dimensional inductor and transformer
US8319564B2 (en) * 2010-03-26 2012-11-27 Altera Corporation Integrated circuits with configurable inductors
US8692608B2 (en) 2011-09-19 2014-04-08 United Microelectronics Corp. Charge pump system capable of stabilizing an output voltage
US9030221B2 (en) 2011-09-20 2015-05-12 United Microelectronics Corporation Circuit structure of test-key and test method thereof
US8395455B1 (en) 2011-10-14 2013-03-12 United Microelectronics Corp. Ring oscillator
US8421509B1 (en) 2011-10-25 2013-04-16 United Microelectronics Corp. Charge pump circuit with low clock feed-through
US8588020B2 (en) 2011-11-16 2013-11-19 United Microelectronics Corporation Sense amplifier and method for determining values of voltages on bit-line pair
CN102522388B (zh) * 2011-12-22 2015-11-11 上海华虹宏力半导体制造有限公司 电感及形成方法
US8493806B1 (en) 2012-01-03 2013-07-23 United Microelectronics Corporation Sense-amplifier circuit of memory and calibrating method thereof
US8970197B2 (en) 2012-08-03 2015-03-03 United Microelectronics Corporation Voltage regulating circuit configured to have output voltage thereof modulated digitally
US8724404B2 (en) 2012-10-15 2014-05-13 United Microelectronics Corp. Memory, supply voltage generation circuit, and operation method of a supply voltage generation circuit used for a memory array
US8836460B2 (en) 2012-10-18 2014-09-16 International Business Machines Corporation Folded conical inductor
US8669897B1 (en) 2012-11-05 2014-03-11 United Microelectronics Corp. Asynchronous successive approximation register analog-to-digital converter and operating method thereof
US8711598B1 (en) 2012-11-21 2014-04-29 United Microelectronics Corp. Memory cell and memory cell array using the same
US8873295B2 (en) 2012-11-27 2014-10-28 United Microelectronics Corporation Memory and operation method thereof
US8643521B1 (en) 2012-11-28 2014-02-04 United Microelectronics Corp. Digital-to-analog converter with greater output resistance
US9030886B2 (en) 2012-12-07 2015-05-12 United Microelectronics Corp. Memory device and driving method thereof
US8953401B2 (en) 2012-12-07 2015-02-10 United Microelectronics Corp. Memory device and method for driving memory array thereof
US8917109B2 (en) 2013-04-03 2014-12-23 United Microelectronics Corporation Method and device for pulse width estimation
US9105355B2 (en) 2013-07-04 2015-08-11 United Microelectronics Corporation Memory cell array operated with multiple operation voltage
US9831026B2 (en) * 2013-07-24 2017-11-28 Globalfoundries Inc. High efficiency on-chip 3D transformer structure
US9251948B2 (en) 2013-07-24 2016-02-02 International Business Machines Corporation High efficiency on-chip 3D transformer structure
US9171663B2 (en) 2013-07-25 2015-10-27 Globalfoundries U.S. 2 Llc High efficiency on-chip 3D transformer structure
US9779869B2 (en) 2013-07-25 2017-10-03 International Business Machines Corporation High efficiency on-chip 3D transformer structure
US8947911B1 (en) 2013-11-07 2015-02-03 United Microelectronics Corp. Method and circuit for optimizing bit line power consumption
US8866536B1 (en) 2013-11-14 2014-10-21 United Microelectronics Corp. Process monitoring circuit and method
US9143143B2 (en) 2014-01-13 2015-09-22 United Microelectronics Corp. VCO restart up circuit and method thereof
KR20160058592A (ko) * 2014-11-17 2016-05-25 에스케이하이닉스 주식회사 알에프 집적회로 및 그 제조방법
US9653204B2 (en) 2015-01-22 2017-05-16 Globalfoundries Inc. Symmetric multi-port inductor for differential multi-band RF circuits
US10249580B2 (en) 2016-06-22 2019-04-02 Qualcomm Incorporated Stacked substrate inductor
US10525690B2 (en) 2016-09-07 2020-01-07 General Electric Company Additive manufacturing-based low-profile inductor
US10199157B2 (en) 2016-09-30 2019-02-05 Intel IP Corporation Stacked metal inductor
TWI723343B (zh) * 2019-02-19 2021-04-01 頎邦科技股份有限公司 具立體電感之半導體結構及其製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2938631B2 (ja) * 1991-08-28 1999-08-23 太陽誘電株式会社 積層セラミックインダクタの製造方法
JPH06163270A (ja) * 1992-11-19 1994-06-10 Murata Mfg Co Ltd 多層基板
JPH07106514A (ja) * 1993-10-07 1995-04-21 Toshiba Corp 半導体集積回路装置
US5446311A (en) * 1994-09-16 1995-08-29 International Business Machines Corporation High-Q inductors in silicon technology without expensive metalization
JP2904086B2 (ja) * 1995-12-27 1999-06-14 日本電気株式会社 半導体装置およびその製造方法
US5831331A (en) * 1996-11-22 1998-11-03 Philips Electronics North America Corporation Self-shielding inductor for multi-layer semiconductor integrated circuits
JP3164025B2 (ja) * 1997-08-04 2001-05-08 日本電気株式会社 半導体集積回路装置及びその製造方法
KR100279753B1 (ko) * 1997-12-03 2001-03-02 정선종 반도체 집적회로 제조공정을 이용한 인덕터 제조방법
JPH11224825A (ja) * 1998-02-06 1999-08-17 Murata Mfg Co Ltd 電子部品の製造方法
US6472285B1 (en) * 1999-04-30 2002-10-29 Winbond Electronics Corporation Method for fabricating high-Q inductance device in monolithic technology
US6426267B2 (en) * 1998-06-19 2002-07-30 Winbond Electronics Corp. Method for fabricating high-Q inductance device in monolithic technology
US6054914A (en) * 1998-07-06 2000-04-25 Midcom, Inc. Multi-layer transformer having electrical connection in a magnetic core
TW386279B (en) * 1998-08-07 2000-04-01 Winbond Electronics Corp Inductor structure with air gap and method of manufacturing thereof
DE69931670T2 (de) * 1998-12-11 2006-09-21 Matsushita Electric Industrial Co., Ltd., Kadoma Hochfrequenzinduktivität mit hohem Q-Faktor
JP2002246231A (ja) * 2001-02-14 2002-08-30 Murata Mfg Co Ltd 積層型インダクタ

Also Published As

Publication number Publication date
US20050057335A1 (en) 2005-03-17
US7721414B2 (en) 2010-05-25
SG151088A1 (en) 2009-04-30
US20040041234A1 (en) 2004-03-04
JP4505201B2 (ja) 2010-07-21
EP1396875B1 (de) 2008-11-19
JP2004104129A (ja) 2004-04-02
DE60324748D1 (de) 2009-01-02
EP1396875A3 (de) 2006-06-07
SG109527A1 (en) 2005-03-30
EP1396875A2 (de) 2004-03-10
US6841847B2 (en) 2005-01-11

Similar Documents

Publication Publication Date Title
DE60324748D1 (de) 3-D spiralförmige Spule auf einem Halbleitermaterial
US6967555B2 (en) Multi-level symmetrical inductor
CN110415954A (zh) 优化发射以及用于无线电力传输的发射/接收trx线圈
US5355301A (en) One-chip type switching power supply device
ATE412975T1 (de) Spiralförmiger parallel gestapelte spule auf einem halbleitermaterial
US7986199B2 (en) Band pass filter
EP2201583B1 (de) Wandleranordnung
EP1261033B1 (de) Induktive Anordnung auf einem Chip
US10002703B2 (en) Embedded magnetic component transformer device
EP1213729A4 (de) Induktorelement
TW200515588A (en) Semiconductor device
DE69528222D1 (de) Multichip-modul Drosselspule
JP2004104129A5 (de)
CA2062710A1 (en) Transformer for monolithic microwave integrated circuit
CN109215974A (zh) 绕组模块、混合变压器、模块和用于dc-dc功率转换的电路
US6664882B2 (en) High-Q inductor for high frequency
US8198965B2 (en) Grounding of magnetic cores
US20040263308A1 (en) Inductor formed between two layout layers
CN101145435B (zh) 电感结构
US7272884B2 (en) Design and fabrication of inductors on a semiconductor substrate
EP1949390B1 (de) Stromwandler
KR100225847B1 (ko) 이중 나선형 인덕터를 갖는 반도체장치(semiconductor device having dual spiral inductor)
WO2009057421A1 (ja) コイル部品
US6809624B2 (en) Integrated bobbin transformer assembly
US6559750B2 (en) Transformer and electrical device using the same

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties