ATE373120T1 - Verbesserter silizium werkstoff vom typ-n für epitaxie-substrat und verfahren zu seiner herstellung - Google Patents

Verbesserter silizium werkstoff vom typ-n für epitaxie-substrat und verfahren zu seiner herstellung

Info

Publication number
ATE373120T1
ATE373120T1 AT00958007T AT00958007T ATE373120T1 AT E373120 T1 ATE373120 T1 AT E373120T1 AT 00958007 T AT00958007 T AT 00958007T AT 00958007 T AT00958007 T AT 00958007T AT E373120 T1 ATE373120 T1 AT E373120T1
Authority
AT
Austria
Prior art keywords
silicon material
enhanced
production
improved type
epitaxy substrate
Prior art date
Application number
AT00958007T
Other languages
English (en)
Inventor
Fritz Kirscht
Peter Wildes
Volker Todt
Nobuo Fukuto
Boris Snegirev
Seung-Bae Kim
Original Assignee
Sumco Phoenix Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Phoenix Corp filed Critical Sumco Phoenix Corp
Application granted granted Critical
Publication of ATE373120T1 publication Critical patent/ATE373120T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
AT00958007T 1999-07-16 2000-07-12 Verbesserter silizium werkstoff vom typ-n für epitaxie-substrat und verfahren zu seiner herstellung ATE373120T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/354,994 US6491752B1 (en) 1999-07-16 1999-07-16 Enhanced n-type silicon material for epitaxial wafer substrate and method of making same

Publications (1)

Publication Number Publication Date
ATE373120T1 true ATE373120T1 (de) 2007-09-15

Family

ID=23395820

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00958007T ATE373120T1 (de) 1999-07-16 2000-07-12 Verbesserter silizium werkstoff vom typ-n für epitaxie-substrat und verfahren zu seiner herstellung

Country Status (7)

Country Link
US (2) US6491752B1 (de)
EP (1) EP1115918B1 (de)
JP (1) JP4567262B2 (de)
KR (1) KR100720366B1 (de)
AT (1) ATE373120T1 (de)
DE (1) DE60036359T2 (de)
WO (1) WO2001006545A2 (de)

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JP4817078B2 (ja) * 2002-11-11 2011-11-16 株式会社Ｓｕｍｃｏ シリコンウェーハ
WO2004081225A2 (en) 2003-03-07 2004-09-23 Rubicon Genomics, Inc. Amplification and analysis of whole genome and whole transcriptome libraries generated by a dna polymerization process
JP2006073580A (ja) * 2004-08-31 2006-03-16 Sumco Corp シリコンエピタキシャルウェーハ及びその製造方法
JP2006216826A (ja) * 2005-02-04 2006-08-17 Sumco Corp Ｓｏｉウェーハの製造方法
US7485928B2 (en) * 2005-11-09 2009-02-03 Memc Electronic Materials, Inc. Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering
WO2007062096A2 (en) * 2005-11-23 2007-05-31 The Arizona Board Of Regents, A Body Corporate Acting On Behalf Of Arizona State University Silicon-germanium hydrides and methods for making and using same
JP5161492B2 (ja) * 2007-05-31 2013-03-13 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶の製造方法
KR101137908B1 (ko) * 2007-11-05 2012-05-03 삼성코닝정밀소재 주식회사 질화갈륨 웨이퍼 및 질화갈륨의 전하 농도 제어 방법
KR101168655B1 (ko) * 2007-12-28 2012-07-25 삼성코닝정밀소재 주식회사 Ｎ 타입 질화갈륨 웨이퍼의 광학 특성 향상 방법
JP5830215B2 (ja) * 2008-10-01 2015-12-09 信越半導体株式会社 エピタキシャルウエーハ並びにその製造方法
JP5399212B2 (ja) * 2009-11-16 2014-01-29 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶の製造方法
JP2011134830A (ja) * 2009-12-24 2011-07-07 Covalent Materials Corp エピタキシャルウェーハ
JP2011155130A (ja) * 2010-01-27 2011-08-11 Covalent Materials Tokuyama Corp エピタキシャルウェーハ及びその製造方法
KR20230065174A (ko) 2021-11-04 2023-05-11 가부시키가이샤 사무코 실리콘 웨이퍼 및 에피택셜 실리콘 웨이퍼
TW202336300A (zh) 2021-11-04 2023-09-16 日商Ｓｕｍｃｏ股份有限公司 矽晶圓及磊晶矽晶圓

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Also Published As

Publication number Publication date
DE60036359D1 (de) 2007-10-25
DE60036359T2 (de) 2008-06-05
EP1115918B1 (de) 2007-09-12
EP1115918A2 (de) 2001-07-18
JP2003505324A (ja) 2003-02-12
WO2001006545A2 (en) 2001-01-25
KR100720366B1 (ko) 2007-05-21
US20030116083A1 (en) 2003-06-26
JP4567262B2 (ja) 2010-10-20
KR20010079844A (ko) 2001-08-22
WO2001006545A3 (en) 2001-05-17
WO2001006545B1 (en) 2001-07-05
US6491752B1 (en) 2002-12-10

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