ATE326756T1 - Mram mit mittelpunktsreferenzgenerator - Google Patents

Mram mit mittelpunktsreferenzgenerator

Info

Publication number
ATE326756T1
ATE326756T1 AT02756923T AT02756923T ATE326756T1 AT E326756 T1 ATE326756 T1 AT E326756T1 AT 02756923 T AT02756923 T AT 02756923T AT 02756923 T AT02756923 T AT 02756923T AT E326756 T1 ATE326756 T1 AT E326756T1
Authority
AT
Austria
Prior art keywords
mram
column
midpoint
generator
center point
Prior art date
Application number
AT02756923T
Other languages
English (en)
Inventor
Peter K Naji
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Application granted granted Critical
Publication of ATE326756T1 publication Critical patent/ATE326756T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
  • Permanent Magnet Type Synchronous Machine (AREA)
AT02756923T 2001-08-27 2002-08-02 Mram mit mittelpunktsreferenzgenerator ATE326756T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/940,320 US6445612B1 (en) 2001-08-27 2001-08-27 MRAM with midpoint generator reference and method for readout

Publications (1)

Publication Number Publication Date
ATE326756T1 true ATE326756T1 (de) 2006-06-15

Family

ID=25474624

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02756923T ATE326756T1 (de) 2001-08-27 2002-08-02 Mram mit mittelpunktsreferenzgenerator

Country Status (9)

Country Link
US (1) US6445612B1 (de)
EP (1) EP1423855B1 (de)
JP (1) JP4324642B2 (de)
KR (1) KR100884497B1 (de)
CN (1) CN100403445C (de)
AT (1) ATE326756T1 (de)
DE (1) DE60211531T2 (de)
TW (1) TWI268508B (de)
WO (1) WO2003019567A1 (de)

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JP3920565B2 (ja) * 2000-12-26 2007-05-30 株式会社東芝 磁気ランダムアクセスメモリ
JP2002230965A (ja) * 2001-01-24 2002-08-16 Internatl Business Mach Corp <Ibm> 不揮発性メモリ装置
US6385109B1 (en) * 2001-01-30 2002-05-07 Motorola, Inc. Reference voltage generator for MRAM and method
JP4818519B2 (ja) * 2001-02-06 2011-11-16 ルネサスエレクトロニクス株式会社 磁気記憶装置
JP4780878B2 (ja) * 2001-08-02 2011-09-28 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
US6829158B2 (en) * 2001-08-22 2004-12-07 Motorola, Inc. Magnetoresistive level generator and method
DE60205569T2 (de) * 2001-12-21 2006-05-18 Kabushiki Kaisha Toshiba MRAM mit gestapelten Speicherzellen
US6639852B2 (en) * 2002-01-07 2003-10-28 Faraday Technology Corp. Sensing apparatus for a ROM memory device
US6512689B1 (en) * 2002-01-18 2003-01-28 Motorola, Inc. MRAM without isolation devices
KR100434958B1 (ko) * 2002-05-24 2004-06-11 주식회사 하이닉스반도체 마그네틱 램
KR100496858B1 (ko) * 2002-08-02 2005-06-22 삼성전자주식회사 비트라인 클램핑 전압에 상관없이 기준 셀로 일정 전류가흐르는 마그네틱 랜덤 억세스 메모리
JP4679036B2 (ja) * 2002-09-12 2011-04-27 ルネサスエレクトロニクス株式会社 記憶装置
KR100515053B1 (ko) * 2002-10-02 2005-09-14 삼성전자주식회사 비트라인 클램핑 전압 레벨에 대해 안정적인 독출 동작이가능한 마그네틱 메모리 장치
US6944049B2 (en) * 2002-10-30 2005-09-13 Infineon Technologies Ag Magnetic tunnel junction memory cell architecture
JP2004185755A (ja) 2002-12-05 2004-07-02 Sharp Corp 不揮発性半導体記憶装置
KR100506932B1 (ko) * 2002-12-10 2005-08-09 삼성전자주식회사 기준 셀들을 갖는 자기 램 소자 및 그 구조체
TWI223259B (en) 2003-01-07 2004-11-01 Ind Tech Res Inst A reference mid-point current generator for a magnetic random access memory
US7904786B2 (en) * 2003-03-06 2011-03-08 Hewlett-Packard Development Company, L.P. Assisted memory system
US6985383B2 (en) * 2003-10-20 2006-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Reference generator for multilevel nonlinear resistivity memory storage elements
US7064970B2 (en) * 2003-11-04 2006-06-20 Micron Technology, Inc. Serial transistor-cell array architecture
US7286378B2 (en) * 2003-11-04 2007-10-23 Micron Technology, Inc. Serial transistor-cell array architecture
KR100528341B1 (ko) * 2003-12-30 2005-11-15 삼성전자주식회사 자기 램 및 그 읽기방법
WO2005096315A2 (en) * 2004-04-01 2005-10-13 Koninklijke Philips Electronics N.V. Thermally stable reference voltage generator for mram
US7075817B2 (en) * 2004-07-20 2006-07-11 Unity Semiconductor Corporation Two terminal memory array having reference cells
US7795617B2 (en) * 2004-10-29 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, IC card, IC tag, RFID, transponder, paper money, valuable securities, passport, electronic device, bag, and clothes
DE102004058132B3 (de) * 2004-12-02 2006-03-02 Infineon Technologies Ag Speicherschaltung sowie Verfahren zum Bewerten eines Speicherdatums einer CBRAM-Widerstandsspeicherzelle
US7327600B2 (en) * 2004-12-23 2008-02-05 Unity Semiconductor Corporation Storage controller for multiple configurations of vertical memory
JP4993118B2 (ja) * 2005-02-08 2012-08-08 日本電気株式会社 半導体記憶装置及び半導体記憶装置の読み出し方法
US7286393B2 (en) * 2005-03-31 2007-10-23 Honeywell International Inc. System and method for hardening MRAM bits
JP2006344258A (ja) * 2005-06-07 2006-12-21 Toshiba Corp 磁気ランダムアクセスメモリ
JP4779487B2 (ja) * 2005-07-25 2011-09-28 Ｔｄｋ株式会社 磁気メモリデバイス
JP4799218B2 (ja) * 2006-03-03 2011-10-26 株式会社東芝 スピン注入書き込み型磁気記憶装置
WO2007111319A1 (ja) * 2006-03-28 2007-10-04 Nec Corporation 磁気ランダムアクセスメモリ及びその動作方法
US7747926B2 (en) * 2006-05-02 2010-06-29 Everspin Technologies, Inc. Methods and apparatus for a memory device with self-healing reference bits
US7345912B2 (en) * 2006-06-01 2008-03-18 Grandis, Inc. Method and system for providing a magnetic memory structure utilizing spin transfer
US7379327B2 (en) * 2006-06-26 2008-05-27 Grandis, Inc. Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
US7542340B2 (en) * 2006-07-11 2009-06-02 Innovative Silicon Isi Sa Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
JP4987616B2 (ja) * 2006-08-31 2012-07-25 株式会社東芝 磁気ランダムアクセスメモリ及び抵抗ランダムアクセスメモリ
US20090027811A1 (en) * 2007-07-27 2009-01-29 Magic Technologies, Inc. Spin transfer MRAM device with reduced coefficient of MTJ resistance variation
JP2009087494A (ja) * 2007-10-02 2009-04-23 Toshiba Corp 磁気ランダムアクセスメモリ
JP5044432B2 (ja) * 2008-02-07 2012-10-10 株式会社東芝 抵抗変化メモリ
US8184476B2 (en) * 2008-12-26 2012-05-22 Everspin Technologies, Inc. Random access memory architecture including midpoint reference
KR101068573B1 (ko) 2009-04-30 2011-09-30 주식회사 하이닉스반도체 반도체 메모리 장치
JP2011003241A (ja) * 2009-06-18 2011-01-06 Toshiba Corp 半導体記憶装置
US8213213B2 (en) * 2009-11-09 2012-07-03 National Tsing Hua University Reference current generator for resistance type memory and method thereof
US8773887B1 (en) 2011-05-25 2014-07-08 Peter K. Naji Resistive memory devices and related methods
US9892782B1 (en) 2011-05-25 2018-02-13 Terra Prime Technologies, Llc Digital to analog converters and memory devices and related methods
US9589633B2 (en) 2011-05-25 2017-03-07 Peter K. Nagey Memory devices and related methods
KR101933719B1 (ko) * 2012-05-25 2018-12-28 에스케이하이닉스 주식회사 반도체 메모리 장치
KR101929983B1 (ko) 2012-07-18 2018-12-17 삼성전자주식회사 저항성 메모리 셀을 갖는 반도체 메모리 장치 및 그 테스트 방법
US9281039B2 (en) 2013-07-30 2016-03-08 Qualcomm Incorporated System and method to provide a reference cell using magnetic tunnel junction cells
KR102641744B1 (ko) 2017-01-20 2024-03-04 삼성전자주식회사 가변 저항 메모리 소자
US10224088B1 (en) 2018-02-12 2019-03-05 Nxp Usa, Inc. Memory with a global reference circuit
CN110111822B (zh) * 2019-05-07 2021-03-02 江南大学 一种具有较高工作频率的mram
US10803913B1 (en) * 2019-06-11 2020-10-13 Applied Materials, Inc. Narrow range sense amplifier with immunity to noise and variation
US10741232B1 (en) 2019-06-25 2020-08-11 International Business Machines Corporation Tunable reference system with sense amplifier offset cancellation for magnetic random access memory
CN112349321B (zh) * 2019-08-06 2024-03-12 上海磁宇信息科技有限公司 一种使用公共参考电压的磁性随机存储器芯片架构
US11651807B2 (en) * 2020-12-07 2023-05-16 Everspin Technologies, Inc. Midpoint sensing reference generation for STT-MRAM

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US6055178A (en) * 1998-12-18 2000-04-25 Motorola, Inc. Magnetic random access memory with a reference memory array
US6191972B1 (en) * 1999-04-30 2001-02-20 Nec Corporation Magnetic random access memory circuit
US6185143B1 (en) 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
US6205073B1 (en) * 2000-03-31 2001-03-20 Motorola, Inc. Current conveyor and method for readout of MTJ memories
US6317376B1 (en) * 2000-06-20 2001-11-13 Hewlett-Packard Company Reference signal generation for magnetic random access memory devices
US6269040B1 (en) * 2000-06-26 2001-07-31 International Business Machines Corporation Interconnection network for connecting memory cells to sense amplifiers
US6426907B1 (en) * 2001-01-24 2002-07-30 Infineon Technologies North America Corp. Reference for MRAM cell
US6392923B1 (en) * 2001-02-27 2002-05-21 Motorola, Inc. Magnetoresistive midpoint generator and method

Also Published As

Publication number Publication date
US6445612B1 (en) 2002-09-03
KR100884497B1 (ko) 2009-02-18
JP2005501370A (ja) 2005-01-13
KR20040029083A (ko) 2004-04-03
EP1423855B1 (de) 2006-05-17
EP1423855A1 (de) 2004-06-02
CN1550017A (zh) 2004-11-24
JP4324642B2 (ja) 2009-09-02
DE60211531D1 (de) 2006-06-22
CN100403445C (zh) 2008-07-16
WO2003019567A1 (en) 2003-03-06
TWI268508B (en) 2006-12-11
DE60211531T2 (de) 2006-09-07

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