ATE320619T1 - Novolak planarisierungsschicht mit hoher wärmebeständigkeit - Google Patents

Novolak planarisierungsschicht mit hoher wärmebeständigkeit

Info

Publication number
ATE320619T1
ATE320619T1 AT99968506T AT99968506T ATE320619T1 AT E320619 T1 ATE320619 T1 AT E320619T1 AT 99968506 T AT99968506 T AT 99968506T AT 99968506 T AT99968506 T AT 99968506T AT E320619 T1 ATE320619 T1 AT E320619T1
Authority
AT
Austria
Prior art keywords
novolak
substrate
heat resistance
high heat
planarization layer
Prior art date
Application number
AT99968506T
Other languages
English (en)
Inventor
Richard Spear
Todd Krajewski
Nigel Hacker
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Application granted granted Critical
Publication of ATE320619T1 publication Critical patent/ATE320619T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/494—Silver salt compositions other than silver halide emulsions; Photothermographic systems ; Thermographic systems using noble metal compounds
    • G03C1/496—Binder-free compositions, e.g. evaporated
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/74—Applying photosensitive compositions to the base; Drying processes therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y10T428/31688—Next to aldehyde or ketone condensation product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31942—Of aldehyde or ketone condensation product

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials Engineering (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Paints Or Removers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Laminated Bodies (AREA)
  • Moulding By Coating Moulds (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
AT99968506T 1998-12-20 1999-12-20 Novolak planarisierungsschicht mit hoher wärmebeständigkeit ATE320619T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/205,006 US6506831B2 (en) 1998-12-20 1998-12-20 Novolac polymer planarization films with high temperature stability

Publications (1)

Publication Number Publication Date
ATE320619T1 true ATE320619T1 (de) 2006-04-15

Family

ID=22760396

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99968506T ATE320619T1 (de) 1998-12-20 1999-12-20 Novolak planarisierungsschicht mit hoher wärmebeständigkeit

Country Status (10)

Country Link
US (4) US6506831B2 (de)
EP (1) EP1141778B1 (de)
JP (1) JP2003535352A (de)
KR (1) KR20010111483A (de)
CN (1) CN1214290C (de)
AT (1) ATE320619T1 (de)
AU (1) AU2590900A (de)
DE (1) DE69930418D1 (de)
TW (1) TWI235289B (de)
WO (1) WO2000038016A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6506831B2 (en) * 1998-12-20 2003-01-14 Honeywell International Inc. Novolac polymer planarization films with high temperature stability
US20040192876A1 (en) * 2002-11-18 2004-09-30 Nigel Hacker Novolac polymer planarization films with high temparature stability
CN1802603A (zh) * 2003-07-17 2006-07-12 霍尼韦尔国际公司 用于高级微电子应用的平面化薄膜及其生产装置和方法
US20050142283A1 (en) * 2003-07-31 2005-06-30 Hiroshi Kishimoto Method for forming coated film, organic device using the same, and method for manufacturing electroluminescent element
US20050126706A1 (en) * 2003-12-10 2005-06-16 Bunch Richard D. Non-corrosive low temperature liquid resist adhesive
US8901268B2 (en) * 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
KR20060090519A (ko) * 2005-02-07 2006-08-11 삼성전자주식회사 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한층상 부재 형성 방법 및 박막 트랜지스터 표시판의 제조방법
CL2008001614A1 (es) * 2007-06-05 2008-08-08 Wyeth Corp Composicion parasiticida veterinaria que comprende un disolvente que no contiene hidroxilo, un estabilizador, amitraz y opcionalmente una lactona macrociclica y miristato de isopropilo; y su uso para tratar o controlar una infestacion o infeccion par
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
KR101860170B1 (ko) * 2011-02-28 2018-05-21 제이에스알 가부시끼가이샤 레지스트 하층막 형성용 조성물, 패턴 형성 방법 및 레지스트 하층막
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US8986921B2 (en) * 2013-01-15 2015-03-24 International Business Machines Corporation Lithographic material stack including a metal-compound hard mask
JP2015231678A (ja) * 2014-06-09 2015-12-24 帝人デュポンフィルム株式会社 平坦化フィルム
WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
WO2016208518A1 (ja) * 2015-06-22 2016-12-29 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びパターニングされた基板の製造方法
WO2020111068A1 (ja) * 2018-11-29 2020-06-04 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びレジストパターン形成方法

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3928288A (en) 1973-04-11 1975-12-23 Dow Chemical Co Epoxy novolac resins having a narrow molecular weight distribution and process therefor
DE3344202A1 (de) 1983-12-07 1985-06-20 Merck Patent Gmbh, 6100 Darmstadt Positiv-fotoresistzusammensetzungen
JPH0654384B2 (ja) 1985-08-09 1994-07-20 東京応化工業株式会社 ポジ型ホトレジスト組成物
DE3608492A1 (de) 1986-03-14 1987-09-17 Hoechst Ag Verfahren zum abtrennen von hoehermolekularen bestandteilen aus phenolpolymeren
US5266440A (en) 1986-12-23 1993-11-30 Shipley Company Inc. Photoresist composition with aromatic novolak binder having a weight-average molecular weight in excess of 1500 Daltons
US5456996A (en) 1988-07-07 1995-10-10 Sumitomo Chemical Company, Limited Radiation-sensitive positive resist composition
JP2836916B2 (ja) 1990-06-01 1998-12-14 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP2919142B2 (ja) 1990-12-27 1999-07-12 株式会社東芝 感光性組成物およびそれを用いたパターン形成方法
US5348838A (en) 1991-07-31 1994-09-20 Kabushiki Kaisha Toshiba Photosensitive composition comprising alkali soluble binder and photoacid generator having sulfonyl group
US5276126A (en) 1991-11-04 1994-01-04 Ocg Microelectronic Materials, Inc. Selected novolak resin planarization layer for lithographic applications
US5372914A (en) 1992-03-24 1994-12-13 Kabushiki Kaisha Toshiba Pattern forming method
US5206348A (en) 1992-07-23 1993-04-27 Morton International, Inc. Hexahydroxybenzophenone sulfonate esters of diazonaphthoquinone sensitizers and positive photoresists employing same
US5401605A (en) 1992-08-12 1995-03-28 Tokyo Ohka Kogyo Co., Ltd. Positive working photosensitive resin composition containing 1,2-naphthoquinone diazide esterification product of triphenylmethane compound
US5332647A (en) 1992-08-26 1994-07-26 Tokyo Ohka Kogyo Co., Ltd. Positive-working quinone diazide composition containing N,N',N"-substituted isocyanurate compound and associated article
US5434031A (en) 1992-11-18 1995-07-18 Tokyo Ohka Kogyo Co., Ltd. Positive-working naphthoquinone diazide photoresist composition containing specific hydroxy compound additive
DE69418256T2 (de) 1993-02-02 2000-01-05 Sumitomo Chemical Co., Ltd. Azo-farbstoffe für farbfilter und verfahren zu deren herstellung
US5413894A (en) 1993-05-07 1995-05-09 Ocg Microelectronic Materials, Inc. High ortho-ortho bonded novolak binder resins and their use in radiation-sensitive compositions
JP3024694B2 (ja) 1993-11-29 2000-03-21 東京応化工業株式会社 ポジ型ホトレジスト組成物
EP0886183A1 (de) 1993-12-17 1998-12-23 Fuji Photo Film Co., Ltd. Positiv-arbeitende Fotolackzusammensetzung
JPH07199455A (ja) 1993-12-28 1995-08-04 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
JP3434340B2 (ja) 1994-03-29 2003-08-04 東京応化工業株式会社 高感度ポジ型ホトレジスト組成物
JP3192548B2 (ja) 1994-04-22 2001-07-30 東京応化工業株式会社 ポジ型ホトレジスト組成物
US5858547A (en) 1994-07-06 1999-01-12 Alliedsignal, Inc. Novolac polymer planarization films for microelectronic structures
US5498514A (en) 1994-08-09 1996-03-12 Tokyo Ohka Kogyo Co., Ltd. Lithographic double-coated patterning plate with undercoat levelling layer
JP3278306B2 (ja) 1994-10-31 2002-04-30 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
EP0727711A3 (de) 1995-02-17 1997-04-09 Ocg Microelectronic Materials Fotoresistzusammensetzungen, die superkritische Fluid fraktionierte polymerische Harzbindemittel enthalten
JP3324898B2 (ja) 1995-02-24 2002-09-17 東京応化工業株式会社 ポジ型レジストパターンの製造方法
JP3501422B2 (ja) 1995-03-17 2004-03-02 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JP3444562B2 (ja) 1995-03-28 2003-09-08 東京応化工業株式会社 レジスト溶液の調製方法
JPH0915853A (ja) 1995-04-27 1997-01-17 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
US5750310A (en) 1995-04-27 1998-05-12 Fuji Photo Film Co., Ltd. Positive photoresist composition
JP3467118B2 (ja) 1995-05-24 2003-11-17 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
JPH0943841A (ja) 1995-05-25 1997-02-14 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物およびこれを用いた多層レジスト材料
US5709977A (en) 1995-07-13 1998-01-20 Fuji Photo Film Co., Ltd. Positive working photoresist composition
US5739265A (en) 1995-09-20 1998-04-14 Clariant Finance (Bvi) Ltd. Fractionation of phenol formaldehyde condensate and photoresist compositions produced therefrom
US5652081A (en) 1995-09-20 1997-07-29 Fuji Photo Film Co., Ltd. Positive working photoresist composition
US5693749A (en) 1995-09-20 1997-12-02 Hoechst Celanese Corporation Fractionation of phenol formaldehyde condensate and photoresist compositions produced therefrom
JP3562673B2 (ja) 1996-01-22 2004-09-08 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
US5674657A (en) 1996-11-04 1997-10-07 Olin Microelectronic Chemicals, Inc. Positive-working photoresist compositions comprising an alkali-soluble novolak resin made with four phenolic monomers
US5853954A (en) * 1996-12-18 1998-12-29 Clariant Finance (Bvi) Limited Fractionated novolak resin and photoresist composition therefrom
US5910559A (en) 1996-12-18 1999-06-08 Clariant Finance (Bvi) Limited Fractionated novolak resin from cresol-formaldehyde reaction mixture and photoresist composition therefrom
US6027853A (en) * 1998-01-16 2000-02-22 Olin Microelectronic Chemicals, Inc. Process for preparing a radiation-sensitive composition
US6506831B2 (en) * 1998-12-20 2003-01-14 Honeywell International Inc. Novolac polymer planarization films with high temperature stability

Also Published As

Publication number Publication date
US20020002265A1 (en) 2002-01-03
US20010000515A1 (en) 2001-04-26
US6506831B2 (en) 2003-01-14
US6517951B2 (en) 2003-02-11
CN1214290C (zh) 2005-08-10
US20030130482A1 (en) 2003-07-10
DE69930418D1 (de) 2006-05-11
WO2000038016A1 (en) 2000-06-29
EP1141778B1 (de) 2006-03-15
US20020012809A1 (en) 2002-01-31
AU2590900A (en) 2000-07-12
CN1334931A (zh) 2002-02-06
JP2003535352A (ja) 2003-11-25
US6723780B2 (en) 2004-04-20
KR20010111483A (ko) 2001-12-19
EP1141778A1 (de) 2001-10-10
US6506441B2 (en) 2003-01-14
TWI235289B (en) 2005-07-01

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