ATE310249T1 - Magnetfeldsensor - Google Patents

Magnetfeldsensor

Info

Publication number
ATE310249T1
ATE310249T1 AT98905712T AT98905712T ATE310249T1 AT E310249 T1 ATE310249 T1 AT E310249T1 AT 98905712 T AT98905712 T AT 98905712T AT 98905712 T AT98905712 T AT 98905712T AT E310249 T1 ATE310249 T1 AT E310249T1
Authority
AT
Austria
Prior art keywords
signal processing
processing circuit
constant current
magnetic sensor
magnetic
Prior art date
Application number
AT98905712T
Other languages
English (en)
Inventor
Kazutoshi Ishibashi
Ichiro Shibasaki
Original Assignee
Asahi Kasei Denshi Kk
Asahi Kasei Emd Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei Denshi Kk, Asahi Kasei Emd Corp filed Critical Asahi Kasei Denshi Kk
Application granted granted Critical
Publication of ATE310249T1 publication Critical patent/ATE310249T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D3/00—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups
    • G01D3/028—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups mitigating undesired influences, e.g. temperature, pressure
    • G01D3/036—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups mitigating undesired influences, e.g. temperature, pressure on measuring arrangements themselves

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
  • Geophysics And Detection Of Objects (AREA)
AT98905712T 1997-02-28 1998-02-27 Magnetfeldsensor ATE310249T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4637697 1997-02-28
JP17211497 1997-06-27
PCT/JP1998/000841 WO1998038519A1 (fr) 1997-02-28 1998-02-27 Detecteur magnetique

Publications (1)

Publication Number Publication Date
ATE310249T1 true ATE310249T1 (de) 2005-12-15

Family

ID=26386487

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98905712T ATE310249T1 (de) 1997-02-28 1998-02-27 Magnetfeldsensor

Country Status (9)

Country Link
US (1) US6448768B1 (de)
EP (1) EP0964259B1 (de)
JP (1) JP3362858B2 (de)
KR (1) KR100338611B1 (de)
CN (1) CN1124494C (de)
AT (1) ATE310249T1 (de)
DE (1) DE69832368T2 (de)
TW (1) TW422994B (de)
WO (1) WO1998038519A1 (de)

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US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6594414B2 (en) 2001-07-25 2003-07-15 Motorola, Inc. Structure and method of fabrication for an optical switch
US6585424B2 (en) 2001-07-25 2003-07-01 Motorola, Inc. Structure and method for fabricating an electro-rheological lens
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7317313B2 (en) * 2002-11-14 2008-01-08 Measurement Specialties, Inc. Magnetic encoder apparatus
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
CN100511719C (zh) * 2003-09-09 2009-07-08 旭化成电子材料元件株式会社 红外线传感器ic、红外线传感器及其制造方法
US7217981B2 (en) * 2005-01-06 2007-05-15 International Business Machines Corporation Tunable temperature coefficient of resistance resistors and method of fabricating same
US7630159B2 (en) * 2005-05-27 2009-12-08 Agere Systems Inc. Resistance mode comparator for determining head resistance
CN101331385B (zh) * 2005-12-16 2011-11-30 旭化成电子材料元件株式会社 位置检测装置
JP2008151530A (ja) * 2006-12-14 2008-07-03 Denso Corp 磁界検出用半導体集積回路
JP4940965B2 (ja) * 2007-01-29 2012-05-30 株式会社デンソー 回転センサ及び回転センサ装置
KR101280646B1 (ko) 2009-06-30 2013-07-01 아사히 가세이 일렉트로닉스 가부시끼가이샤 자기 센서
KR101046029B1 (ko) * 2010-04-23 2011-07-01 삼성전기주식회사 홀 소자 및 자기 센서 회로
CN101937063B (zh) * 2010-08-11 2013-02-13 上海腾怡半导体有限公司 磁场传感器
CN102445671B (zh) * 2010-10-13 2015-12-16 北京中科信电子装备有限公司 一种霍尔器件误差补偿电路
JP6073705B2 (ja) * 2013-02-26 2017-02-01 エスアイアイ・セミコンダクタ株式会社 ヒューズ回路及び半導体集積回路装置
US9322840B2 (en) * 2013-07-01 2016-04-26 Infineon Technologies Ag Resistive element
JP6505717B2 (ja) * 2013-12-26 2019-04-24 アレグロ・マイクロシステムズ・エルエルシー センサ診断のための方法および装置
JP6370620B2 (ja) * 2014-06-27 2018-08-08 エイブリック株式会社 磁気センサ
US10527703B2 (en) 2015-12-16 2020-01-07 Allegro Microsystems, Llc Circuits and techniques for performing self-test diagnostics in a magnetic field sensor
CN107167164B (zh) * 2016-03-08 2020-11-06 艾普凌科有限公司 磁传感器和磁传感器装置
CN107305240A (zh) * 2016-04-20 2017-10-31 德昌电机(深圳)有限公司 磁传感器集成电路、电机组件及应用设备
JP6994843B2 (ja) * 2017-04-28 2022-01-14 エイブリック株式会社 磁気センサ回路
JP7200760B2 (ja) * 2019-03-08 2023-01-10 Tdk株式会社 磁気抵抗効果デバイス及び磁気アレイ
CN111208452A (zh) * 2019-11-07 2020-05-29 中国计量大学 一种用于多铁性磁传感器的直读式读出系统

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JPS61226982A (ja) 1985-04-01 1986-10-08 Asahi Chem Ind Co Ltd ハイブリツド・ホ−ルｉｃ
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JPH08194040A (ja) 1995-01-18 1996-07-30 Mitsubishi Electric Corp 磁電変換装置
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Also Published As

Publication number Publication date
WO1998038519A1 (fr) 1998-09-03
KR20000075825A (ko) 2000-12-26
US20020021126A1 (en) 2002-02-21
CN1249038A (zh) 2000-03-29
DE69832368D1 (de) 2005-12-22
EP0964259B1 (de) 2005-11-16
KR100338611B1 (ko) 2002-05-27
TW422994B (en) 2001-02-21
US6448768B1 (en) 2002-09-10
EP0964259A4 (de) 2000-11-22
EP0964259A1 (de) 1999-12-15
DE69832368T2 (de) 2006-08-03
JP3362858B2 (ja) 2003-01-07
CN1124494C (zh) 2003-10-15

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