ATE295011T1 - Oberflächenemittierender laser mit vertikalem resonator - Google Patents

Oberflächenemittierender laser mit vertikalem resonator

Info

Publication number
ATE295011T1
ATE295011T1 AT02701506T AT02701506T ATE295011T1 AT E295011 T1 ATE295011 T1 AT E295011T1 AT 02701506 T AT02701506 T AT 02701506T AT 02701506 T AT02701506 T AT 02701506T AT E295011 T1 ATE295011 T1 AT E295011T1
Authority
AT
Austria
Prior art keywords
mesa
air gap
vcsel
semiconductor layer
dbr
Prior art date
Application number
AT02701506T
Other languages
English (en)
Inventor
Elyahou Kapon
Vladimir Iakovlev
Alexei Sirbu
Alok Rudra
Original Assignee
Ecole Polytech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/809,236 external-priority patent/US6546029B2/en
Priority claimed from US09/809,239 external-priority patent/US6542531B2/en
Application filed by Ecole Polytech filed Critical Ecole Polytech
Application granted granted Critical
Publication of ATE295011T1 publication Critical patent/ATE295011T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
    • H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0614—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/1838—Reflector bonded by wafer fusion or by an intermediate compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
AT02701506T 2001-03-15 2002-03-08 Oberflächenemittierender laser mit vertikalem resonator ATE295011T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/809,236 US6546029B2 (en) 2001-03-15 2001-03-15 Micro-electromechanically tunable vertical cavity photonic device and a method of fabrication thereof
US09/809,239 US6542531B2 (en) 2001-03-15 2001-03-15 Vertical cavity surface emitting laser and a method of fabrication thereof
PCT/IB2002/000683 WO2002075868A2 (en) 2001-03-15 2002-03-08 Vertical cavity surface emitting laser

Publications (1)

Publication Number Publication Date
ATE295011T1 true ATE295011T1 (de) 2005-05-15

Family

ID=27123202

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02701506T ATE295011T1 (de) 2001-03-15 2002-03-08 Oberflächenemittierender laser mit vertikalem resonator

Country Status (10)

Country Link
EP (2) EP1378039B1 (de)
JP (2) JP2004534383A (de)
KR (2) KR100623406B1 (de)
CN (2) CN1509406A (de)
AT (1) ATE295011T1 (de)
AU (1) AU2002234838A1 (de)
DE (1) DE60204007T2 (de)
ES (1) ES2241988T3 (de)
HK (1) HK1069020A1 (de)
WO (2) WO2002075263A1 (de)

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AU2003249779B2 (en) * 2002-08-13 2010-02-18 The University Of Western Australia A resonant cavity enhanced device and a method for fabricating same
AU2002950739A0 (en) * 2002-08-13 2002-09-12 The University Of Western Australia A resonant cavity enhanced device and a method for fabricating same
CN1319175C (zh) * 2003-01-17 2007-05-30 中国科学院半导体研究所 基于激子效应的多量子阱光调制器/探测器列阵
JP2005026465A (ja) * 2003-07-02 2005-01-27 Sharp Corp 酸化物半導体発光素子
CN100345015C (zh) * 2003-12-30 2007-10-24 侯继东 一类基于微机电系统技术的可调光学器件
JP4722404B2 (ja) * 2004-02-24 2011-07-13 日本電信電話株式会社 長波長帯面発光半導体レーザ
CN100446286C (zh) * 2004-07-30 2008-12-24 奥斯兰姆奥普托半导体有限责任公司 具有减小反射的层序列的发光二极管
KR101015500B1 (ko) * 2004-10-11 2011-02-24 삼성전자주식회사 터널 접합을 구비한 고출력 레이저 소자 및 상기 레이저소자용 레이저 펌핑부
US20060215720A1 (en) * 2005-03-24 2006-09-28 Corzine Scott W Quantum cascade laser with grating formed by a periodic variation in doping
JP2007214430A (ja) * 2006-02-10 2007-08-23 Fuji Xerox Co Ltd マルチモード光通信システムおよび多波長面発光素子
WO2007103527A2 (en) * 2006-03-07 2007-09-13 Brenner Mary K Red light laser
JP5841546B2 (ja) * 2010-01-29 2016-01-13 ヒューレット−パッカード デベロップメント カンパニー エル．ピー．Ｈｅｗｌｅｔｔ‐Ｐａｃｋａｒｄ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ， Ｌ．Ｐ． マルチモードのモノリシック垂直共振器面発光レーザアレイ及びこれを含むレーザシステム
US9991676B2 (en) 2010-10-29 2018-06-05 Hewlett Packard Enterprise Development Lp Small-mode-volume, vertical-cavity, surface-emitting laser
EP2571117A1 (de) 2011-09-15 2013-03-20 Axetris AG Lasereinheit mit unterdrückter Rückkopplung
GB2500670A (en) 2012-03-29 2013-10-02 Ibm Method of fabrication of a micro-optics device with curved surface defects
US9105492B2 (en) 2012-05-08 2015-08-11 LuxVue Technology Corporation Compliant micro device transfer head
US9843159B2 (en) 2012-07-27 2017-12-12 Thorlabs, Inc. Widely tunable short cavity laser
CA2905537C (en) * 2013-03-15 2021-09-14 Praevium Research, Inc. Widely tunable swept source
WO2014191005A1 (en) * 2013-05-31 2014-12-04 Danmarks Tekniske Universitet A wavelength tunable photon source with sealed inner volume
JP2015233127A (ja) 2014-05-12 2015-12-24 キヤノン株式会社 面発光レーザ、レーザアレイ、光源装置、情報取得装置及び光干渉断層計
US11025031B2 (en) * 2016-11-29 2021-06-01 Leonardo Electronics Us Inc. Dual junction fiber-coupled laser diode and related methods
DE102017112235A1 (de) 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Laserdiode und Verfahren zum Herstellen einer Laserdiode
US10170889B1 (en) * 2017-08-14 2019-01-01 Lumentum Operations Llc Controlling uniformity of lateral oxidation of wafer surface features using a vertical stack of horizontal wafers
CN109066291A (zh) * 2018-08-30 2018-12-21 武汉光迅科技股份有限公司 一种半导体芯片及其制作方法
US11441484B2 (en) * 2019-03-20 2022-09-13 Seoul Viosys Co., Ltd. Vertical-cavity surface-emitting laser device
US11757253B2 (en) * 2020-05-21 2023-09-12 Lumentum Operations Llc Vertical cavity surface emitting laser with active layer-specific addressability
US11611195B2 (en) * 2020-12-30 2023-03-21 Mellanox Technologies, Ltd. Fabrication of low-cost long wavelength VCSEL with optical confinement control
WO2022239330A1 (ja) * 2021-05-10 2022-11-17 ソニーセミコンダクタソリューションズ株式会社 面発光レーザ、面発光レーザアレイ及び電子機器

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US5513204A (en) * 1995-04-12 1996-04-30 Optical Concepts, Inc. Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump
US5739945A (en) * 1995-09-29 1998-04-14 Tayebati; Parviz Electrically tunable optical filter utilizing a deformable multi-layer mirror
US5977604A (en) * 1996-03-08 1999-11-02 The Regents Of The University Of California Buried layer in a semiconductor formed by bonding
AU3600697A (en) * 1996-08-09 1998-03-06 W.L. Gore & Associates, Inc. Vertical cavity surface emitting laser with tunnel junction
WO1998008278A1 (en) * 1996-08-21 1998-02-26 W.L. Gore & Associates, Inc. Vertical cavity surface emitting lasers using patterned wafer fusion
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AU764799B2 (en) * 1997-12-29 2003-08-28 Coretek, Inc. Microelectromechanically tunable, confocal, vertical cavity surface emitting laser and fabry-perot filter

Also Published As

Publication number Publication date
EP1378039A2 (de) 2004-01-07
EP1378039B1 (de) 2005-05-04
WO2002075868A2 (en) 2002-09-26
CN1263209C (zh) 2006-07-05
KR100623406B1 (ko) 2006-09-18
WO2002075868A3 (en) 2002-12-12
KR20030083735A (ko) 2003-10-30
KR100622852B1 (ko) 2006-09-18
CN1524328A (zh) 2004-08-25
EP1368623A1 (de) 2003-12-10
WO2002075263A1 (en) 2002-09-26
JP2004538621A (ja) 2004-12-24
KR20030084994A (ko) 2003-11-01
DE60204007T2 (de) 2006-03-16
ES2241988T3 (es) 2005-11-01
CN1509406A (zh) 2004-06-30
JP2004534383A (ja) 2004-11-11
JP4174322B2 (ja) 2008-10-29
AU2002234838A1 (en) 2002-10-03
HK1069020A1 (en) 2005-05-06
DE60204007D1 (de) 2005-06-09

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Legal Events

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