ATE285122T1 - Ccd-bildaufnahmevorrichtung mit multiplizierregister - Google Patents

Ccd-bildaufnahmevorrichtung mit multiplizierregister

Info

Publication number
ATE285122T1
ATE285122T1 AT98301428T AT98301428T ATE285122T1 AT E285122 T1 ATE285122 T1 AT E285122T1 AT 98301428 T AT98301428 T AT 98301428T AT 98301428 T AT98301428 T AT 98301428T AT E285122 T1 ATE285122 T1 AT E285122T1
Authority
AT
Austria
Prior art keywords
register
charge
electrodes
drive pulses
multiplication
Prior art date
Application number
AT98301428T
Other languages
German (de)
English (en)
Inventor
David James Burt
Raymond Thomas Bell
Original Assignee
E2V Tech Uk Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E2V Tech Uk Ltd filed Critical E2V Tech Uk Ltd
Application granted granted Critical
Publication of ATE285122T1 publication Critical patent/ATE285122T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Heat Treatment Of Strip Materials And Filament Materials (AREA)
  • Measurement Of Optical Distance (AREA)
AT98301428T 1997-03-22 1998-02-26 Ccd-bildaufnahmevorrichtung mit multiplizierregister ATE285122T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9705986A GB2323471B (en) 1997-03-22 1997-03-22 CCd imagers

Publications (1)

Publication Number Publication Date
ATE285122T1 true ATE285122T1 (de) 2005-01-15

Family

ID=10809702

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98301428T ATE285122T1 (de) 1997-03-22 1998-02-26 Ccd-bildaufnahmevorrichtung mit multiplizierregister

Country Status (6)

Country Link
US (1) US6444968B1 (ja)
EP (1) EP0866501B1 (ja)
JP (1) JP3862850B2 (ja)
AT (1) ATE285122T1 (ja)
DE (1) DE69828099T2 (ja)
GB (1) GB2323471B (ja)

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US7078670B2 (en) * 2003-09-15 2006-07-18 Imagerlabs, Inc. Low noise charge gain circuit and CCD using same
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GB2413007A (en) * 2004-04-07 2005-10-12 E2V Tech Uk Ltd Multiplication register for amplifying signal charge
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US7391000B2 (en) 2004-10-20 2008-06-24 Leica Microsystems Cms Gmbh EMCCD detector, as well as a spectrometer and a microscope having an EMCCD detector
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GB2431538B (en) * 2005-10-24 2010-12-22 E2V Tech CCD device
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JP4835836B2 (ja) 2006-03-30 2011-12-14 日本電気株式会社 電子増倍ゲイン校正機構および電子増倍ゲイン校正方法
JP4759444B2 (ja) * 2006-06-05 2011-08-31 富士フイルム株式会社 Ｃｃｄ型固体撮像素子の駆動方法、固体撮像装置
JP4198166B2 (ja) 2006-07-27 2008-12-17 三洋電機株式会社 撮像装置
US7485840B2 (en) 2007-02-08 2009-02-03 Dalsa Corporation Semiconductor charge multiplication amplifier device and semiconductor image sensor provided with such an amplifier device
EP1983332B1 (en) * 2007-04-18 2016-08-31 Horiba Jobin Yvon S.A.S. A spectroscopic imaging method and system for exploring the surface of a sample
JP2008271049A (ja) 2007-04-18 2008-11-06 Hamamatsu Photonics Kk 撮像装置及びそのゲイン調整方法
JP4851388B2 (ja) 2007-05-16 2012-01-11 浜松ホトニクス株式会社 撮像装置
GB0717484D0 (en) * 2007-09-07 2007-10-17 E2V Tech Uk Ltd Gain measurement method
US7755685B2 (en) * 2007-09-28 2010-07-13 Sarnoff Corporation Electron multiplication CMOS imager
JP5346605B2 (ja) * 2009-01-30 2013-11-20 浜松ホトニクス株式会社 固体撮像装置
JP5330001B2 (ja) 2009-01-30 2013-10-30 浜松ホトニクス株式会社 固体撮像装置
JP5335459B2 (ja) 2009-01-30 2013-11-06 浜松ホトニクス株式会社 電子増倍機能内蔵型の固体撮像素子
JP5270392B2 (ja) * 2009-01-30 2013-08-21 浜松ホトニクス株式会社 固体撮像装置
JP5243983B2 (ja) * 2009-01-30 2013-07-24 浜松ホトニクス株式会社 電子増倍機能内蔵型の固体撮像素子
JP5237843B2 (ja) * 2009-01-30 2013-07-17 浜松ホトニクス株式会社 固体撮像装置
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JP5237844B2 (ja) * 2009-01-30 2013-07-17 浜松ホトニクス株式会社 固体撮像装置
JP5438331B2 (ja) 2009-01-30 2014-03-12 浜松ホトニクス株式会社 固体撮像装置
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US8440986B2 (en) * 2010-04-23 2013-05-14 Uchicago Argonne, Llc. On axis sample visualization along a synchrontron photo beam
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Also Published As

Publication number Publication date
JPH10304256A (ja) 1998-11-13
DE69828099T2 (de) 2005-11-03
DE69828099D1 (de) 2005-01-20
GB2323471A (en) 1998-09-23
EP0866501B1 (en) 2004-12-15
JP3862850B2 (ja) 2006-12-27
US6444968B1 (en) 2002-09-03
EP0866501A1 (en) 1998-09-23
GB2323471B (en) 2002-04-17
GB9705986D0 (en) 1997-05-07

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