DE69828099D1 - CCD-Bildaufnahmevorrichtung mit Multiplizierregister - Google Patents

CCD-Bildaufnahmevorrichtung mit Multiplizierregister

Info

Publication number
DE69828099D1
DE69828099D1 DE69828099T DE69828099T DE69828099D1 DE 69828099 D1 DE69828099 D1 DE 69828099D1 DE 69828099 T DE69828099 T DE 69828099T DE 69828099 T DE69828099 T DE 69828099T DE 69828099 D1 DE69828099 D1 DE 69828099D1
Authority
DE
Germany
Prior art keywords
register
charge
electrodes
drive pulses
multiplication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69828099T
Other languages
English (en)
Other versions
DE69828099T2 (de
Inventor
David James Burt
Raymond Thomas Bell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne UK Ltd
Original Assignee
e2v Technologies UK Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by e2v Technologies UK Ltd filed Critical e2v Technologies UK Ltd
Publication of DE69828099D1 publication Critical patent/DE69828099D1/de
Application granted granted Critical
Publication of DE69828099T2 publication Critical patent/DE69828099T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Heat Treatment Of Strip Materials And Filament Materials (AREA)
  • Measurement Of Optical Distance (AREA)
DE69828099T 1997-03-22 1998-02-26 CCD-Bildaufnahmevorrichtung mit Multiplizierregister Expired - Lifetime DE69828099T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9705986A GB2323471B (en) 1997-03-22 1997-03-22 CCd imagers
GB9705986 1997-03-22

Publications (2)

Publication Number Publication Date
DE69828099D1 true DE69828099D1 (de) 2005-01-20
DE69828099T2 DE69828099T2 (de) 2005-11-03

Family

ID=10809702

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69828099T Expired - Lifetime DE69828099T2 (de) 1997-03-22 1998-02-26 CCD-Bildaufnahmevorrichtung mit Multiplizierregister

Country Status (6)

Country Link
US (1) US6444968B1 (de)
EP (1) EP0866501B1 (de)
JP (1) JP3862850B2 (de)
AT (1) ATE285122T1 (de)
DE (1) DE69828099T2 (de)
GB (1) GB2323471B (de)

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US6784412B2 (en) * 2001-08-29 2004-08-31 Texas Instruments Incorporated Compact image sensor layout with charge multiplying register
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AU2003214199A1 (en) * 2002-03-18 2003-10-08 Massachusetts Institute Of Technology Event-driven charge-coupled device design and applications therefor
JP3689866B2 (ja) * 2002-05-30 2005-08-31 日本テキサス・インスツルメンツ株式会社 Ｃｍｄ及びｃｍｄ搭載ｃｃｄ装置
FR2850168B1 (fr) * 2003-01-21 2005-04-01 Cit Alcatel Procede de detection d'un signal lumineux, et chaine lidar
US7436494B1 (en) 2003-03-28 2008-10-14 Irvine Sensors Corp. Three-dimensional ladar module with alignment reference insert circuitry
GB0316994D0 (en) 2003-07-21 2003-08-27 E2V Tech Uk Ltd Smear reduction in CCD images
US7078670B2 (en) * 2003-09-15 2006-07-18 Imagerlabs, Inc. Low noise charge gain circuit and CCD using same
EP1528412B1 (de) * 2003-10-31 2011-05-11 Agfa-Gevaert HealthCare GmbH Leuchtstoffauslesevorrichtung und Leuchtstoffausleseverfahren
GB2413007A (en) * 2004-04-07 2005-10-12 E2V Tech Uk Ltd Multiplication register for amplifying signal charge
JP4442608B2 (ja) 2004-07-20 2010-03-31 株式会社島津製作所 固体撮像装置、撮像装置並びに撮像素子
US7378634B2 (en) * 2004-07-27 2008-05-27 Sarnoff Corporation Imaging methods and apparatus having extended dynamic range
US7522205B2 (en) * 2004-09-10 2009-04-21 Eastman Kodak Company Image sensor with charge multiplication
EP1804295A4 (de) 2004-10-07 2010-04-21 Shimadzu Corp Bilderfassungseinrichtung, abbildungsvorrichtung damit und verfahren zur herstellung einer bilderfassungseinrichtung
CA2584186A1 (en) * 2004-10-18 2006-08-31 Macquarie University Fluorescence detection
DE102004051201A1 (de) * 2004-10-20 2006-05-11 Leica Microsystems Cms Gmbh EMCCD-Detektor sowie ein Spektrometer und ein Mikroskop mit einem EMCCD-Detektor
US7391000B2 (en) 2004-10-20 2008-06-24 Leica Microsystems Cms Gmbh EMCCD detector, as well as a spectrometer and a microscope having an EMCCD detector
GB0501149D0 (en) * 2005-01-20 2005-02-23 Andor Technology Plc Automatic calibration of electron multiplying CCds
GB0503827D0 (en) * 2005-02-24 2005-04-06 E2V Tech Uk Ltd Enhanced spectral range imaging sensor
GB2424758A (en) * 2005-03-31 2006-10-04 E2V Tech CCD device
DE102005025641A1 (de) * 2005-06-03 2006-12-07 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Srahlungsdetektor zur Detektion intensitätsarmer Strahlung
GB2429521A (en) * 2005-08-18 2007-02-28 E2V Tech CCD device for time resolved spectroscopy
GB2431538B (en) * 2005-10-24 2010-12-22 E2V Tech CCD device
JP2007175294A (ja) * 2005-12-28 2007-07-12 Ge Medical Systems Global Technology Co Llc イメージセンサ及びその制御方法並びにｘ線検出器及びｘ線ｃｔ装置
DE102006000976A1 (de) * 2006-01-07 2007-07-12 Leica Microsystems Cms Gmbh Vorrichtung, Mikroskop mit Vorrichtung und Verfahren zum Kalibrieren eines Photosensor-Chips
GB2435126A (en) * 2006-02-14 2007-08-15 E2V Tech EMCCD device with multiplication register gain measurement allowing realtime calibration of a camera in use.
JP4835836B2 (ja) 2006-03-30 2011-12-14 日本電気株式会社 電子増倍ゲイン校正機構および電子増倍ゲイン校正方法
JP4759444B2 (ja) * 2006-06-05 2011-08-31 富士フイルム株式会社 Ｃｃｄ型固体撮像素子の駆動方法、固体撮像装置
JP4198166B2 (ja) 2006-07-27 2008-12-17 三洋電機株式会社 撮像装置
US7485840B2 (en) 2007-02-08 2009-02-03 Dalsa Corporation Semiconductor charge multiplication amplifier device and semiconductor image sensor provided with such an amplifier device
EP1983332B1 (de) * 2007-04-18 2016-08-31 Horiba Jobin Yvon S.A.S. Spektroskopisches Bildgebungsverfahren und System zur Untersuchung der Oberfläche einer Probe
JP2008271049A (ja) 2007-04-18 2008-11-06 Hamamatsu Photonics Kk 撮像装置及びそのゲイン調整方法
JP4851388B2 (ja) 2007-05-16 2012-01-11 浜松ホトニクス株式会社 撮像装置
GB0717484D0 (en) * 2007-09-07 2007-10-17 E2V Tech Uk Ltd Gain measurement method
US7755685B2 (en) * 2007-09-28 2010-07-13 Sarnoff Corporation Electron multiplication CMOS imager
JP5243984B2 (ja) 2009-01-30 2013-07-24 浜松ホトニクス株式会社 電子増倍機能内蔵型の固体撮像素子
JP5237843B2 (ja) 2009-01-30 2013-07-17 浜松ホトニクス株式会社 固体撮像装置
JP5270392B2 (ja) * 2009-01-30 2013-08-21 浜松ホトニクス株式会社 固体撮像装置
JP5438331B2 (ja) 2009-01-30 2014-03-12 浜松ホトニクス株式会社 固体撮像装置
JP5335459B2 (ja) * 2009-01-30 2013-11-06 浜松ホトニクス株式会社 電子増倍機能内蔵型の固体撮像素子
JP5346605B2 (ja) 2009-01-30 2013-11-20 浜松ホトニクス株式会社 固体撮像装置
JP5237844B2 (ja) 2009-01-30 2013-07-17 浜松ホトニクス株式会社 固体撮像装置
JP5330001B2 (ja) 2009-01-30 2013-10-30 浜松ホトニクス株式会社 固体撮像装置
JP5243983B2 (ja) * 2009-01-30 2013-07-24 浜松ホトニクス株式会社 電子増倍機能内蔵型の固体撮像素子
GB2468668B (en) 2009-03-17 2014-07-16 E2V Tech Uk Ltd CCD imaging array with extended dynamic range
US8440986B2 (en) * 2010-04-23 2013-05-14 Uchicago Argonne, Llc. On axis sample visualization along a synchrontron photo beam
JP2011243781A (ja) 2010-05-19 2011-12-01 Hamamatsu Photonics Kk 量子カスケードレーザ
US8773564B2 (en) 2010-12-14 2014-07-08 Truesense Imaging, Inc. Image sensor with charge multiplication
US8493492B2 (en) 2010-12-14 2013-07-23 Truesense Imaging, Inc. Method of producing an image with pixel signals produced by an image sensor that includes multiple output channels
US8479374B2 (en) 2010-12-14 2013-07-09 Truesense Imaging, Inc. Method of producing an image sensor having multiple output channels
US8493491B2 (en) 2010-12-14 2013-07-23 Truesense Imaging, Inc. Methods for processing an image captured by an image sensor having multiple output channels
US8553126B2 (en) 2010-12-14 2013-10-08 Truesense Imaging, Inc. Image sensor with charge multiplication
US8800130B2 (en) 2011-05-25 2014-08-12 Truesense Imaging, Inc. Methods for producing image sensors having multi-purpose architecture
US8773563B2 (en) 2011-05-25 2014-07-08 Truesense Imaging, Inc. Multi-purpose architecture for CCD image sensors
US8411189B2 (en) 2011-05-25 2013-04-02 Truesense Imaging, Inc. Multi-purpose architecture for CCD image sensors
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GB2549330A (en) * 2016-04-15 2017-10-18 Teledyne E2V (Uk) Ltd Image sensor

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Also Published As

Publication number Publication date
JP3862850B2 (ja) 2006-12-27
JPH10304256A (ja) 1998-11-13
US6444968B1 (en) 2002-09-03
ATE285122T1 (de) 2005-01-15
GB9705986D0 (en) 1997-05-07
GB2323471B (en) 2002-04-17
EP0866501A1 (de) 1998-09-23
GB2323471A (en) 1998-09-23
EP0866501B1 (de) 2004-12-15
DE69828099T2 (de) 2005-11-03

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