ATE285122T1 - Ccd-bildaufnahmevorrichtung mit multiplizierregister - Google Patents

Ccd-bildaufnahmevorrichtung mit multiplizierregister

Info

Publication number
ATE285122T1
ATE285122T1 AT98301428T AT98301428T ATE285122T1 AT E285122 T1 ATE285122 T1 AT E285122T1 AT 98301428 T AT98301428 T AT 98301428T AT 98301428 T AT98301428 T AT 98301428T AT E285122 T1 ATE285122 T1 AT E285122T1
Authority
AT
Austria
Prior art keywords
register
charge
electrodes
drive pulses
multiplication
Prior art date
Application number
AT98301428T
Other languages
English (en)
Inventor
David James Burt
Raymond Thomas Bell
Original Assignee
E2V Tech Uk Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E2V Tech Uk Ltd filed Critical E2V Tech Uk Ltd
Application granted granted Critical
Publication of ATE285122T1 publication Critical patent/ATE285122T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14831Area CCD imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14806Structural or functional details thereof
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713Transfer or readout registers; Split readout registers or multiple readout registers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/72Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
AT98301428T 1997-03-22 1998-02-26 Ccd-bildaufnahmevorrichtung mit multiplizierregister ATE285122T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9705986A GB2323471B (en) 1997-03-22 1997-03-22 CCd imagers

Publications (1)

Publication Number Publication Date
ATE285122T1 true ATE285122T1 (de) 2005-01-15

Family

ID=10809702

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98301428T ATE285122T1 (de) 1997-03-22 1998-02-26 Ccd-bildaufnahmevorrichtung mit multiplizierregister

Country Status (6)

Country Link
US (1) US6444968B1 (de)
EP (1) EP0866501B1 (de)
JP (1) JP3862850B2 (de)
AT (1) ATE285122T1 (de)
DE (1) DE69828099T2 (de)
GB (1) GB2323471B (de)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4173575B2 (ja) * 1998-01-16 2008-10-29 浜松ホトニクス株式会社 撮像装置
GB9828166D0 (en) * 1998-12-22 1999-02-17 Eev Ltd Imaging apparatus
US6278142B1 (en) * 1999-08-30 2001-08-21 Isetex, Inc Semiconductor image intensifier
EP1152469B1 (de) * 2000-04-28 2015-12-02 Texas Instruments Japan Limited Ladungssignalauslesesystem mit hohem Dynamikbereich
GB2371403B (en) * 2001-01-18 2005-07-27 Marconi Applied Techn Ltd Solid state imager arrangements
US7420605B2 (en) 2001-01-18 2008-09-02 E2V Technologies (Uk) Limited Solid state imager arrangements
US7139023B2 (en) * 2001-03-12 2006-11-21 Texas Instruments Incorporated High dynamic range charge readout system
US7190400B2 (en) * 2001-06-04 2007-03-13 Texas Instruments Incorporated Charge multiplier with logarithmic dynamic range compression implemented in charge domain
US6784412B2 (en) * 2001-08-29 2004-08-31 Texas Instruments Incorporated Compact image sensor layout with charge multiplying register
US6895077B2 (en) 2001-11-21 2005-05-17 University Of Massachusetts Medical Center System and method for x-ray fluoroscopic imaging
WO2003081899A1 (en) * 2002-03-18 2003-10-02 Massachusetts Institute Of Technology Event-driven charge-coupled device design and applications therefor
JP3689866B2 (ja) * 2002-05-30 2005-08-31 日本テキサス・インスツルメンツ株式会社 Cmd及びcmd搭載ccd装置
FR2850168B1 (fr) * 2003-01-21 2005-04-01 Cit Alcatel Procede de detection d'un signal lumineux, et chaine lidar
US7436494B1 (en) 2003-03-28 2008-10-14 Irvine Sensors Corp. Three-dimensional ladar module with alignment reference insert circuitry
GB0316994D0 (en) * 2003-07-21 2003-08-27 E2V Tech Uk Ltd Smear reduction in CCD images
US7078670B2 (en) * 2003-09-15 2006-07-18 Imagerlabs, Inc. Low noise charge gain circuit and CCD using same
EP1528412B1 (de) * 2003-10-31 2011-05-11 Agfa-Gevaert HealthCare GmbH Leuchtstoffauslesevorrichtung und Leuchtstoffausleseverfahren
GB2413007A (en) * 2004-04-07 2005-10-12 E2V Tech Uk Ltd Multiplication register for amplifying signal charge
US7692707B2 (en) 2004-07-20 2010-04-06 Shimadzu Corporation Solid-state image pickup apparatus, image pickup apparatus, and image sensor
US7378634B2 (en) * 2004-07-27 2008-05-27 Sarnoff Corporation Imaging methods and apparatus having extended dynamic range
US7522205B2 (en) * 2004-09-10 2009-04-21 Eastman Kodak Company Image sensor with charge multiplication
US7728899B2 (en) 2004-10-07 2010-06-01 Shimadzu Corporation Image sensor, and image pickup apparatus using same, and manufacturing method for manufacturing image sensor
AU2005327903A1 (en) * 2004-10-18 2006-08-31 Macquarie University Fluorescence detection
DE102004051201A1 (de) * 2004-10-20 2006-05-11 Leica Microsystems Cms Gmbh EMCCD-Detektor sowie ein Spektrometer und ein Mikroskop mit einem EMCCD-Detektor
US7391000B2 (en) 2004-10-20 2008-06-24 Leica Microsystems Cms Gmbh EMCCD detector, as well as a spectrometer and a microscope having an EMCCD detector
GB0501149D0 (en) * 2005-01-20 2005-02-23 Andor Technology Plc Automatic calibration of electron multiplying CCds
GB0503827D0 (en) 2005-02-24 2005-04-06 E2V Tech Uk Ltd Enhanced spectral range imaging sensor
GB2424758A (en) * 2005-03-31 2006-10-04 E2V Tech CCD device
DE102005025641A1 (de) 2005-06-03 2006-12-07 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Srahlungsdetektor zur Detektion intensitätsarmer Strahlung
GB2429521A (en) 2005-08-18 2007-02-28 E2V Tech CCD device for time resolved spectroscopy
GB2431538B (en) * 2005-10-24 2010-12-22 E2V Tech CCD device
JP2007175294A (ja) * 2005-12-28 2007-07-12 Ge Medical Systems Global Technology Co Llc イメージセンサ及びその制御方法並びにx線検出器及びx線ct装置
DE102006000976A1 (de) 2006-01-07 2007-07-12 Leica Microsystems Cms Gmbh Vorrichtung, Mikroskop mit Vorrichtung und Verfahren zum Kalibrieren eines Photosensor-Chips
GB2435126A (en) * 2006-02-14 2007-08-15 E2V Tech EMCCD device with multiplication register gain measurement allowing realtime calibration of a camera in use.
JP4835836B2 (ja) 2006-03-30 2011-12-14 日本電気株式会社 電子増倍ゲイン校正機構および電子増倍ゲイン校正方法
JP4759444B2 (ja) * 2006-06-05 2011-08-31 富士フイルム株式会社 Ccd型固体撮像素子の駆動方法、固体撮像装置
JP4198166B2 (ja) 2006-07-27 2008-12-17 三洋電機株式会社 撮像装置
US7485840B2 (en) 2007-02-08 2009-02-03 Dalsa Corporation Semiconductor charge multiplication amplifier device and semiconductor image sensor provided with such an amplifier device
EP1983332B1 (de) * 2007-04-18 2016-08-31 Horiba Jobin Yvon S.A.S. Spektroskopisches Bildgebungsverfahren und System zur Untersuchung der Oberfläche einer Probe
JP2008271049A (ja) 2007-04-18 2008-11-06 Hamamatsu Photonics Kk 撮像装置及びそのゲイン調整方法
JP4851388B2 (ja) 2007-05-16 2012-01-11 浜松ホトニクス株式会社 撮像装置
GB0717484D0 (en) * 2007-09-07 2007-10-17 E2V Tech Uk Ltd Gain measurement method
US7755685B2 (en) * 2007-09-28 2010-07-13 Sarnoff Corporation Electron multiplication CMOS imager
JP5243984B2 (ja) 2009-01-30 2013-07-24 浜松ホトニクス株式会社 電子増倍機能内蔵型の固体撮像素子
JP5335459B2 (ja) * 2009-01-30 2013-11-06 浜松ホトニクス株式会社 電子増倍機能内蔵型の固体撮像素子
JP5243983B2 (ja) * 2009-01-30 2013-07-24 浜松ホトニクス株式会社 電子増倍機能内蔵型の固体撮像素子
JP5237843B2 (ja) * 2009-01-30 2013-07-17 浜松ホトニクス株式会社 固体撮像装置
JP5438331B2 (ja) * 2009-01-30 2014-03-12 浜松ホトニクス株式会社 固体撮像装置
JP5237844B2 (ja) 2009-01-30 2013-07-17 浜松ホトニクス株式会社 固体撮像装置
JP5330001B2 (ja) 2009-01-30 2013-10-30 浜松ホトニクス株式会社 固体撮像装置
JP5270392B2 (ja) * 2009-01-30 2013-08-21 浜松ホトニクス株式会社 固体撮像装置
JP5346605B2 (ja) * 2009-01-30 2013-11-20 浜松ホトニクス株式会社 固体撮像装置
GB2468668B (en) 2009-03-17 2014-07-16 E2V Tech Uk Ltd CCD imaging array with extended dynamic range
US8440986B2 (en) * 2010-04-23 2013-05-14 Uchicago Argonne, Llc. On axis sample visualization along a synchrontron photo beam
JP2011243781A (ja) 2010-05-19 2011-12-01 Hamamatsu Photonics Kk 量子カスケードレーザ
US8553126B2 (en) 2010-12-14 2013-10-08 Truesense Imaging, Inc. Image sensor with charge multiplication
US8493492B2 (en) 2010-12-14 2013-07-23 Truesense Imaging, Inc. Method of producing an image with pixel signals produced by an image sensor that includes multiple output channels
US8493491B2 (en) 2010-12-14 2013-07-23 Truesense Imaging, Inc. Methods for processing an image captured by an image sensor having multiple output channels
US8773564B2 (en) 2010-12-14 2014-07-08 Truesense Imaging, Inc. Image sensor with charge multiplication
US8479374B2 (en) 2010-12-14 2013-07-09 Truesense Imaging, Inc. Method of producing an image sensor having multiple output channels
US8773563B2 (en) 2011-05-25 2014-07-08 Truesense Imaging, Inc. Multi-purpose architecture for CCD image sensors
US8411189B2 (en) 2011-05-25 2013-04-02 Truesense Imaging, Inc. Multi-purpose architecture for CCD image sensors
US8800130B2 (en) 2011-05-25 2014-08-12 Truesense Imaging, Inc. Methods for producing image sensors having multi-purpose architecture
US9453914B2 (en) * 2011-09-08 2016-09-27 Continental Advanced Lidar Solutions Us, Inc. Terrain mapping LADAR system
GB2549330A (en) * 2016-04-15 2017-10-18 Teledyne E2V (Uk) Ltd Image sensor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3761744A (en) * 1971-12-02 1973-09-25 Bell Telephone Labor Inc Semiconductor charge transfer devices
JPS6233399A (ja) 1985-08-05 1987-02-13 Hitachi Ltd Ccd遅延線
JPS6386672A (ja) * 1986-09-30 1988-04-18 Nec Corp Ccdイメ−ジセンサの密度変換方法
US4912536A (en) * 1988-04-15 1990-03-27 Northrop Corporation Charge accumulation and multiplication photodetector
GB8901200D0 (en) * 1989-01-19 1989-03-15 Eev Ltd Camera using imaging array
DE69231482T2 (de) * 1991-07-11 2001-05-10 Texas Instruments Inc Für einen CCD-Bildsensor mit kleiner Bildpunktgrösse geeigneter Ladungsvervielfachungsdetektor (CMD)
US5236871A (en) * 1992-04-29 1993-08-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for producing a hybridization of detector array and integrated circuit for readout
JPH05335549A (ja) * 1992-06-01 1993-12-17 Matsushita Electric Ind Co Ltd 固体撮像装置およびその駆動方法
US5665959A (en) 1995-01-13 1997-09-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Adminstration Solid-state image sensor with focal-plane digital photon-counting pixel array

Also Published As

Publication number Publication date
JP3862850B2 (ja) 2006-12-27
EP0866501B1 (de) 2004-12-15
EP0866501A1 (de) 1998-09-23
DE69828099D1 (de) 2005-01-20
US6444968B1 (en) 2002-09-03
GB2323471B (en) 2002-04-17
GB9705986D0 (en) 1997-05-07
JPH10304256A (ja) 1998-11-13
DE69828099T2 (de) 2005-11-03
GB2323471A (en) 1998-09-23

Similar Documents

Publication Publication Date Title
ATE285122T1 (de) Ccd-bildaufnahmevorrichtung mit multiplizierregister
EP0942593A3 (de) Festkörperbildaufnahmevorrichtung
RU96115390A (ru) Устройство для формирования изображений
JPS6343951B2 (de)
ATE252804T1 (de) Bildaufnahmegerät zur bildaufnahme von strahlung
JP4939727B2 (ja) 固体撮像素子装置
EP1469300A3 (de) Verfahren zur Verwendung einer elektronischen Bildauswerteeinrichtung
US4491964A (en) Image processing integrated circuit
US5146074A (en) Solid state imaging device
US4314275A (en) Infrared time delay with integration CTD imager
CA2173389A1 (en) Ccd register read amplifier
ATE181630T1 (de) Cmos-bildmatrix mit aktiven bildelementen
JP3630832B2 (ja) 光電変換装置
KR910015163A (ko) 고체촬상소자와 그것을 사용한 촬상장치
JP2725508B2 (ja) 多素子光センサ装置
JPS61131907A (ja) 高ダイナミツクレンジ電荷増幅器
US4279000A (en) Photoelectric information input apparatus
KR960026912A (ko) 고체 촬상 소자
JP2006512846A5 (de)
KR930003407A (ko) Ccd 촬상소자
US7532242B1 (en) Pipelined amplifier time delay integration
Weckler et al. Design possibilities for photodiode arrays with integral silicon-gate scan generators
EP0105386B1 (de) Halbleiterbildaufzeichnungselement
JPS61255062A (ja) 光センサアレイ
JPH09247355A (ja) イメージセンサとそれを用いたイメージセンサユニット

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification

Ref document number: 0866501

Country of ref document: EP