ATE285122T1 - CCD IMAGE RECORDING DEVICE WITH MULTIPLY REGISTER - Google Patents

CCD IMAGE RECORDING DEVICE WITH MULTIPLY REGISTER

Info

Publication number
ATE285122T1
ATE285122T1 AT98301428T AT98301428T ATE285122T1 AT E285122 T1 ATE285122 T1 AT E285122T1 AT 98301428 T AT98301428 T AT 98301428T AT 98301428 T AT98301428 T AT 98301428T AT E285122 T1 ATE285122 T1 AT E285122T1
Authority
AT
Austria
Prior art keywords
register
charge
electrodes
drive pulses
multiplication
Prior art date
Application number
AT98301428T
Other languages
German (de)
Inventor
David James Burt
Raymond Thomas Bell
Original Assignee
E2V Tech Uk Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E2V Tech Uk Ltd filed Critical E2V Tech Uk Ltd
Application granted granted Critical
Publication of ATE285122T1 publication Critical patent/ATE285122T1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Heat Treatment Of Strip Materials And Filament Materials (AREA)
  • Measurement Of Optical Distance (AREA)

Abstract

In a CCD imager 1, charge is accumulated in pixels of an image area 2 representative of the intensity of incident radiation and is subsequently transferred to a store section 3 and then on a row by row basis to an output register 4 by applying suitable drive pulses to electrodes 7 and 8. Signal charge in the output register 4 is transferred to a multiplication register 5 by drive pulses applied to electrodes 9 and 10 to give charge transfer in the direction shown by the arrows. One or more drive pulses applied to the electrodes of the multiplication register 5 are of sufficiently large amplitude to produce high field regions in the register element to cause signal multiplication by impact ionisation. This gives a low noise amplification of the signal charge, the multiplied signal charge being detected at charge detection circuit 6. <IMAGE>
AT98301428T 1997-03-22 1998-02-26 CCD IMAGE RECORDING DEVICE WITH MULTIPLY REGISTER ATE285122T1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9705986A GB2323471B (en) 1997-03-22 1997-03-22 CCd imagers

Publications (1)

Publication Number Publication Date
ATE285122T1 true ATE285122T1 (en) 2005-01-15

Family

ID=10809702

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98301428T ATE285122T1 (en) 1997-03-22 1998-02-26 CCD IMAGE RECORDING DEVICE WITH MULTIPLY REGISTER

Country Status (6)

Country Link
US (1) US6444968B1 (en)
EP (1) EP0866501B1 (en)
JP (1) JP3862850B2 (en)
AT (1) ATE285122T1 (en)
DE (1) DE69828099T2 (en)
GB (1) GB2323471B (en)

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US7755685B2 (en) * 2007-09-28 2010-07-13 Sarnoff Corporation Electron multiplication CMOS imager
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JP5237843B2 (en) 2009-01-30 2013-07-17 浜松ホトニクス株式会社 Solid-state imaging device
JP5346605B2 (en) * 2009-01-30 2013-11-20 浜松ホトニクス株式会社 Solid-state imaging device
JP5243984B2 (en) 2009-01-30 2013-07-24 浜松ホトニクス株式会社 Solid-state image sensor with built-in electron multiplication function
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Also Published As

Publication number Publication date
GB2323471A (en) 1998-09-23
GB2323471B (en) 2002-04-17
EP0866501B1 (en) 2004-12-15
EP0866501A1 (en) 1998-09-23
DE69828099D1 (en) 2005-01-20
GB9705986D0 (en) 1997-05-07
DE69828099T2 (en) 2005-11-03
JPH10304256A (en) 1998-11-13
US6444968B1 (en) 2002-09-03
JP3862850B2 (en) 2006-12-27

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