ATE284075T1 - Halbleiter verarbeitungverfahren mit der herstellung von einer sperrschicht - Google Patents

Halbleiter verarbeitungverfahren mit der herstellung von einer sperrschicht

Info

Publication number
ATE284075T1
ATE284075T1 AT98964820T AT98964820T ATE284075T1 AT E284075 T1 ATE284075 T1 AT E284075T1 AT 98964820 T AT98964820 T AT 98964820T AT 98964820 T AT98964820 T AT 98964820T AT E284075 T1 ATE284075 T1 AT E284075T1
Authority
AT
Austria
Prior art keywords
barrier layer
formed over
regions
processing method
semiconductor processing
Prior art date
Application number
AT98964820T
Other languages
English (en)
Inventor
Kunal R Parekh
Randhir P S Thakur
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE284075T1 publication Critical patent/ATE284075T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/57—Capacitors with a dielectric comprising a perovskite structure material comprising a barrier layer to prevent diffusion of hydrogen or oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
AT98964820T 1997-12-19 1998-12-18 Halbleiter verarbeitungverfahren mit der herstellung von einer sperrschicht ATE284075T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/994,054 US6165833A (en) 1997-12-19 1997-12-19 Semiconductor processing method of forming a capacitor
PCT/US1998/027106 WO1999033098A1 (en) 1997-12-19 1998-12-18 Semiconductor processing method comprising the fabrication of a barrier layer

Publications (1)

Publication Number Publication Date
ATE284075T1 true ATE284075T1 (de) 2004-12-15

Family

ID=25540242

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98964820T ATE284075T1 (de) 1997-12-19 1998-12-18 Halbleiter verarbeitungverfahren mit der herstellung von einer sperrschicht

Country Status (8)

Country Link
US (2) US6165833A (de)
EP (2) EP1508914A3 (de)
JP (1) JP3663128B2 (de)
KR (1) KR100455799B1 (de)
AT (1) ATE284075T1 (de)
AU (1) AU2005999A (de)
DE (1) DE69827974T2 (de)
WO (1) WO1999033098A1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5910880A (en) 1997-08-20 1999-06-08 Micron Technology, Inc. Semiconductor circuit components and capacitors
US6911371B2 (en) * 1997-12-19 2005-06-28 Micron Technology, Inc. Capacitor forming methods with barrier layers to threshold voltage shift inducing material
US6191443B1 (en) 1998-02-28 2001-02-20 Micron Technology, Inc. Capacitors, methods of forming capacitors, and DRAM memory cells
GB2358284B (en) 1999-07-02 2004-07-14 Hyundai Electronics Ind Method of manufacturing capacitor for semiconductor memory device
EP1071130A3 (de) * 1999-07-14 2005-09-07 Matsushita Electric Industrial Co., Ltd. Verbindungsleiterstruktur für Halbleitervorrichtung mit zusätzlichen Kapazitäten
KR100359246B1 (ko) * 1999-09-29 2002-11-04 동부전자 주식회사 적층형 캐패시터를 갖는 반도체 장치 제조 방법
US7184290B1 (en) 2000-06-28 2007-02-27 Marvell International Ltd. Logic process DRAM
US6947324B1 (en) 2000-06-28 2005-09-20 Marvell International Ltd. Logic process DRAM
US6570781B1 (en) * 2000-06-28 2003-05-27 Marvell International Ltd. Logic process DRAM
DE10042235A1 (de) * 2000-08-28 2002-04-18 Infineon Technologies Ag Verfahren zur Herstellung einer elektrisch leitenden Verbindung
US6734071B1 (en) * 2000-08-30 2004-05-11 Micron Technology, Inc. Methods of forming insulative material against conductive structures
US6545904B2 (en) * 2001-03-16 2003-04-08 Micron Technology, Inc. 6f2 dram array, a dram array formed on a semiconductive substrate, a method of forming memory cells in a 6f2 dram array and a method of isolating a single row of memory cells in a 6f2 dram array
US6411555B1 (en) 2001-03-19 2002-06-25 Micron Technology, Inc. Reference charge generator, a method for providing a reference charge from a reference charge generator, a method of operating a reference charge generator and a dram memory circuit formed using memory cells having an area of 6f2
US6872320B2 (en) * 2001-04-19 2005-03-29 Xerox Corporation Method for printing etch masks using phase-change materials
US6670717B2 (en) * 2001-10-15 2003-12-30 International Business Machines Corporation Structure and method for charge sensitive electrical devices
US6551893B1 (en) * 2001-11-27 2003-04-22 Micron Technology, Inc. Atomic layer deposition of capacitor dielectric
JP4427782B2 (ja) 2001-12-03 2010-03-10 イートン コーポレーション 内燃エンジンの改善された排気制御のためのシステム
KR20040043378A (ko) * 2002-11-18 2004-05-24 주식회사 하이닉스반도체 반도체 소자의 제조방법
KR100536030B1 (ko) * 2003-02-25 2005-12-12 삼성전자주식회사 반도체 장치의 커패시터 형성 방법
KR100665396B1 (ko) * 2004-01-09 2007-01-04 에스티마이크로일렉트로닉스 엔.브이. 플래쉬 메모리 소자의 제조 방법
US7371627B1 (en) 2005-05-13 2008-05-13 Micron Technology, Inc. Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines
US7120046B1 (en) 2005-05-13 2006-10-10 Micron Technology, Inc. Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines
US7858458B2 (en) 2005-06-14 2010-12-28 Micron Technology, Inc. CMOS fabrication
US7541632B2 (en) 2005-06-14 2009-06-02 Micron Technology, Inc. Relaxed-pitch method of aligning active area to digit line
US7888721B2 (en) 2005-07-06 2011-02-15 Micron Technology, Inc. Surround gate access transistors with grown ultra-thin bodies
US7768051B2 (en) 2005-07-25 2010-08-03 Micron Technology, Inc. DRAM including a vertical surround gate transistor
US7696567B2 (en) 2005-08-31 2010-04-13 Micron Technology, Inc Semiconductor memory device
US7687342B2 (en) 2005-09-01 2010-03-30 Micron Technology, Inc. Method of manufacturing a memory device
US7557032B2 (en) 2005-09-01 2009-07-07 Micron Technology, Inc. Silicided recessed silicon
US7416943B2 (en) 2005-09-01 2008-08-26 Micron Technology, Inc. Peripheral gate stacks and recessed array gates
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
US20090250793A1 (en) * 2008-04-08 2009-10-08 Yuri Sokolov Bpsg film deposition with undoped capping
US10840249B2 (en) * 2018-08-23 2020-11-17 Micron Technology, Inc. Integrated circuitry constructions
US11049864B2 (en) 2019-05-17 2021-06-29 Micron Technology, Inc. Apparatuses including capacitor structures, and related memory devices, electronic systems, and methods

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1165575A (en) * 1966-01-03 1969-10-01 Texas Instruments Inc Semiconductor Device Stabilization.
JPS5253679A (en) 1975-10-29 1977-04-30 Hitachi Ltd Productin of semiconductor device
JPS5253666A (en) * 1975-10-29 1977-04-30 Hitachi Ltd Method of preventing impurity diffusion from doped oxide
US4464701A (en) * 1983-08-29 1984-08-07 International Business Machines Corporation Process for making high dielectric constant nitride based materials and devices using the same
KR940006682B1 (ko) * 1991-10-17 1994-07-25 삼성전자 주식회사 반도체 메모리장치의 제조방법
US5313089A (en) * 1992-05-26 1994-05-17 Motorola, Inc. Capacitor and a memory cell formed therefrom
JP3141553B2 (ja) * 1992-08-06 2001-03-05 日本電気株式会社 半導体装置の製造方法
JP2786071B2 (ja) * 1993-02-17 1998-08-13 日本電気株式会社 半導体装置の製造方法
US5471364A (en) * 1993-03-31 1995-11-28 Texas Instruments Incorporated Electrode interface for high-dielectric-constant materials
JPH0730077A (ja) * 1993-06-23 1995-01-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5504041A (en) * 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
US5488011A (en) * 1994-11-08 1996-01-30 Micron Technology, Inc. Method of forming contact areas between vertical conductors
JP2636755B2 (ja) * 1994-11-09 1997-07-30 日本電気株式会社 半導体装置および半導体装置の製造方法
JP2827958B2 (ja) * 1995-04-27 1998-11-25 日本電気株式会社 半導体記憶装置の容量素子の製造方法
US5654222A (en) * 1995-05-17 1997-08-05 Micron Technology, Inc. Method for forming a capacitor with electrically interconnected construction
US5663088A (en) * 1995-05-19 1997-09-02 Micron Technology, Inc. Method of forming a Ta2 O5 dielectric layer with amorphous diffusion barrier layer and method of forming a capacitor having a Ta2 O5 dielectric layer and amorphous diffusion barrier layer
KR0168338B1 (ko) * 1995-05-31 1998-12-15 김광호 랜딩 패드를 갖는 반도체 메모리 장치의 제조방법
US5597756A (en) * 1995-06-21 1997-01-28 Micron Technology, Inc. Process for fabricating a cup-shaped DRAM capacitor using a multi-layer partly-sacrificial stack
US5866453A (en) * 1995-09-14 1999-02-02 Micron Technology, Inc. Etch process for aligning a capacitor structure and an adjacent contact corridor
US5793076A (en) * 1995-09-21 1998-08-11 Micron Technology, Inc. Scalable high dielectric constant capacitor
US5786248A (en) 1995-10-12 1998-07-28 Micron Technology, Inc. Semiconductor processing method of forming a tantalum oxide containing capacitor
US5608249A (en) 1995-11-16 1997-03-04 Micron Technology, Inc. Reduced area storage node junction
KR100200299B1 (ko) * 1995-11-30 1999-06-15 김영환 반도체 소자 캐패시터 형성방법
KR0170308B1 (ko) * 1995-12-05 1999-02-01 김광호 강유전체 캐패시터의 제조방법
KR100253270B1 (ko) * 1995-12-30 2000-04-15 김영환 반도체소자의 자기정합 스택캐패시터 형성방법
US5843830A (en) 1996-06-26 1998-12-01 Micron Technology, Inc. Capacitor, and methods for forming a capacitor
JPH1022476A (ja) * 1996-07-02 1998-01-23 Sony Corp 容量素子
KR100246989B1 (ko) * 1996-09-09 2000-03-15 김영환 반도체소자의 캐패시터 형성방법
US6251720B1 (en) 1996-09-27 2001-06-26 Randhir P. S. Thakur High pressure reoxidation/anneal of high dielectric constant materials
US5783462A (en) 1997-01-22 1998-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making an external contact to a MOSFET drain for testing of stacked-capacitor DRAMS
US6218260B1 (en) * 1997-04-22 2001-04-17 Samsung Electronics Co., Ltd. Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby
US5910880A (en) 1997-08-20 1999-06-08 Micron Technology, Inc. Semiconductor circuit components and capacitors

Also Published As

Publication number Publication date
EP1042802B1 (de) 2004-12-01
JP3663128B2 (ja) 2005-06-22
AU2005999A (en) 1999-07-12
US6593183B1 (en) 2003-07-15
DE69827974D1 (de) 2005-01-05
WO1999033098A1 (en) 1999-07-01
EP1042802A1 (de) 2000-10-11
JP2002512435A (ja) 2002-04-23
EP1508914A3 (de) 2005-05-25
DE69827974T2 (de) 2005-11-24
KR20010033186A (ko) 2001-04-25
KR100455799B1 (ko) 2004-11-08
US6165833A (en) 2000-12-26
EP1508914A2 (de) 2005-02-23

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