ATE232647T1 - Sicherungsbank doppelter dichte für die programmierung einer integrierten schaltung durch laser durchgebrannte sicherungen - Google Patents
Sicherungsbank doppelter dichte für die programmierung einer integrierten schaltung durch laser durchgebrannte sicherungenInfo
- Publication number
- ATE232647T1 ATE232647T1 AT95117333T AT95117333T ATE232647T1 AT E232647 T1 ATE232647 T1 AT E232647T1 AT 95117333 T AT95117333 T AT 95117333T AT 95117333 T AT95117333 T AT 95117333T AT E232647 T1 ATE232647 T1 AT E232647T1
- Authority
- AT
- Austria
- Prior art keywords
- fuse
- integrated circuit
- bank
- fuse bank
- elements
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US36564194A | 1994-12-29 | 1994-12-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE232647T1 true ATE232647T1 (de) | 2003-02-15 |
Family
ID=23439715
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT95117333T ATE232647T1 (de) | 1994-12-29 | 1995-11-03 | Sicherungsbank doppelter dichte für die programmierung einer integrierten schaltung durch laser durchgebrannte sicherungen |
Country Status (7)
Country | Link |
---|---|
US (2) | US5773869A (de) |
EP (1) | EP0720229B1 (de) |
JP (1) | JP4263775B2 (de) |
KR (1) | KR100399448B1 (de) |
AT (1) | ATE232647T1 (de) |
DE (1) | DE69529602T2 (de) |
TW (1) | TW279229B (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW279229B (en) * | 1994-12-29 | 1996-06-21 | Siemens Ag | Double density fuse bank for the laser break-link programming of an integrated-circuit |
US5905295A (en) | 1997-04-01 | 1999-05-18 | Micron Technology, Inc. | Reduced pitch laser redundancy fuse bank structure |
US5636172A (en) * | 1995-12-22 | 1997-06-03 | Micron Technology, Inc. | Reduced pitch laser redundancy fuse bank structure |
JPH10163331A (ja) * | 1996-12-03 | 1998-06-19 | Texas Instr Japan Ltd | 半導体デバイス用フューズおよび半導体デバイス |
EP0887858A3 (de) * | 1997-06-26 | 1999-02-03 | Siemens Aktiengesellschaft | Schutzschicht für laserdurchbrennbare Sicherungen in Halbleitervorrichtungen |
JP3474415B2 (ja) | 1997-11-27 | 2003-12-08 | 株式会社東芝 | 半導体装置 |
US6130468A (en) | 1998-02-11 | 2000-10-10 | Micron Technology, Inc. | Fuse, memory incorporating same and method |
JP4390297B2 (ja) * | 1998-06-19 | 2009-12-24 | 株式会社ルネサステクノロジ | 半導体装置 |
DE19835263C2 (de) * | 1998-08-04 | 2000-06-21 | Siemens Ag | Integrierte Schaltung mit durch Energieeinwirkung auftrennbaren elektrischen Verbindungstellen |
JP3630999B2 (ja) | 1998-08-19 | 2005-03-23 | 富士通株式会社 | 半導体装置及びその製造方法 |
US6486526B1 (en) * | 1999-01-04 | 2002-11-26 | International Business Machines Corporation | Crack stop between neighboring fuses for protection from fuse blow damage |
JP2000269342A (ja) | 1999-03-12 | 2000-09-29 | Toshiba Microelectronics Corp | 半導体集積回路および半導体集積回路の製造方法 |
US6172929B1 (en) * | 1999-06-25 | 2001-01-09 | Micron Technology, Inc. | Integrated circuit having aligned fuses and methods for forming and programming the fuses |
DE10006243A1 (de) * | 2000-02-11 | 2001-08-23 | Infineon Technologies Ag | Schmelzbrückenanordnung in integrierten Schaltungen |
US6642084B2 (en) * | 2001-01-05 | 2003-11-04 | Micron Technology, Inc. | Methods for forming aligned fuses disposed in an integrated circuit |
DE10112543A1 (de) * | 2001-03-15 | 2002-10-02 | Infineon Technologies Ag | Integrierte Schaltung mit elektrischen Verbindungselementen |
JP4225708B2 (ja) * | 2001-06-12 | 2009-02-18 | 株式会社東芝 | 半導体装置 |
KR100480614B1 (ko) * | 2002-08-27 | 2005-03-31 | 삼성전자주식회사 | 퓨즈 뱅크의 크기를 줄이기 위한 반도체 메모리 장치의퓨즈 뱅크 |
KR100448909B1 (ko) * | 2002-09-27 | 2004-09-16 | 삼성전자주식회사 | 퓨즈 구조 및 그것을 이용한 집적 회로 장치 |
CN100490018C (zh) * | 2003-04-23 | 2009-05-20 | 富士通微电子株式会社 | 半导体存储装置 |
TWI366216B (en) * | 2004-06-18 | 2012-06-11 | Electro Scient Ind Inc | Semiconductor structure processing using multiple laser beam spots |
US8148211B2 (en) | 2004-06-18 | 2012-04-03 | Electro Scientific Industries, Inc. | Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously |
KR101257029B1 (ko) * | 2004-06-18 | 2013-04-22 | 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 | 다중 레이저 빔 스폿을 이용하는 반도체 구조 가공 |
US8049135B2 (en) * | 2004-06-18 | 2011-11-01 | Electro Scientific Industries, Inc. | Systems and methods for alignment of laser beam(s) for semiconductor link processing |
US7477130B2 (en) * | 2005-01-28 | 2009-01-13 | Littelfuse, Inc. | Dual fuse link thin film fuse |
US20070069330A1 (en) * | 2005-09-27 | 2007-03-29 | Jui-Meng Jao | Fuse structure for a semiconductor device |
KR100722934B1 (ko) * | 2005-11-18 | 2007-05-30 | 삼성전자주식회사 | 반도체소자의 퓨즈박스 및 퓨즈 커팅 방법 |
US7388421B1 (en) | 2006-08-23 | 2008-06-17 | National Semiconductor Corporation | Fused trim circuit with test emulation and reduced static current drain |
KR101043841B1 (ko) * | 2008-10-14 | 2011-06-22 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 퓨즈 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58169940A (ja) * | 1982-03-30 | 1983-10-06 | Fujitsu Ltd | 半導体装置の製造方法 |
US4491860A (en) * | 1982-04-23 | 1985-01-01 | Signetics Corporation | TiW2 N Fusible links in semiconductor integrated circuits |
US4935801A (en) | 1987-01-27 | 1990-06-19 | Inmos Corporation | Metallic fuse with optically absorptive layer |
US5260597A (en) * | 1988-07-21 | 1993-11-09 | Quick Technologies Ltd. | Routing structure for a customizable integrated circuit |
US5252844A (en) * | 1988-11-17 | 1993-10-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having a redundant circuit and method of manufacturing thereof |
US4910418A (en) | 1988-12-29 | 1990-03-20 | Gazelle Microcircuits, Inc. | Semiconductor fuse programmable array structure |
US5185291A (en) | 1989-06-30 | 1993-02-09 | At&T Bell Laboratories | Method of making severable conductive path in an integrated-circuit device |
US5025300A (en) | 1989-06-30 | 1991-06-18 | At&T Bell Laboratories | Integrated circuits having improved fusible links |
JPH0529467A (ja) * | 1991-07-24 | 1993-02-05 | Nec Corp | 冗長回路用ヒユーズ |
US5321322A (en) * | 1991-11-27 | 1994-06-14 | Aptix Corporation | Programmable interconnect architecture without active devices |
US5244836A (en) * | 1991-12-30 | 1993-09-14 | North American Philips Corporation | Method of manufacturing fusible links in semiconductor devices |
US5281868A (en) * | 1992-08-18 | 1994-01-25 | Micron Technology, Inc. | Memory redundancy addressing circuit for adjacent columns in a memory |
JPH06120349A (ja) * | 1992-10-09 | 1994-04-28 | Matsushita Electron Corp | 半導体装置の製造方法 |
US5285099A (en) * | 1992-12-15 | 1994-02-08 | International Business Machines Corporation | SiCr microfuses |
JPH06310603A (ja) * | 1993-04-27 | 1994-11-04 | Mitsubishi Electric Corp | 半導体記憶装置 |
TW279229B (en) * | 1994-12-29 | 1996-06-21 | Siemens Ag | Double density fuse bank for the laser break-link programming of an integrated-circuit |
-
1995
- 1995-11-01 TW TW084111544A patent/TW279229B/zh not_active IP Right Cessation
- 1995-11-03 AT AT95117333T patent/ATE232647T1/de not_active IP Right Cessation
- 1995-11-03 EP EP95117333A patent/EP0720229B1/de not_active Expired - Lifetime
- 1995-11-03 DE DE69529602T patent/DE69529602T2/de not_active Expired - Lifetime
- 1995-12-27 JP JP34122495A patent/JP4263775B2/ja not_active Expired - Lifetime
- 1995-12-29 KR KR1019950066811A patent/KR100399448B1/ko not_active IP Right Cessation
-
1997
- 1997-01-08 US US08/780,242 patent/US5773869A/en not_active Expired - Lifetime
-
1998
- 1998-04-02 US US09/053,922 patent/US5986321A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100399448B1 (ko) | 2004-02-25 |
TW279229B (en) | 1996-06-21 |
DE69529602T2 (de) | 2003-10-09 |
EP0720229A2 (de) | 1996-07-03 |
EP0720229A3 (de) | 1998-01-07 |
EP0720229B1 (de) | 2003-02-12 |
JPH08236631A (ja) | 1996-09-13 |
US5986321A (en) | 1999-11-16 |
DE69529602D1 (de) | 2003-03-20 |
US5773869A (en) | 1998-06-30 |
KR960026675A (ko) | 1996-07-22 |
JP4263775B2 (ja) | 2009-05-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |