DE69418976D1 - Schmelzsicherung für integrierte Schaltung - Google Patents

Schmelzsicherung für integrierte Schaltung

Info

Publication number
DE69418976D1
DE69418976D1 DE69418976T DE69418976T DE69418976D1 DE 69418976 D1 DE69418976 D1 DE 69418976D1 DE 69418976 T DE69418976 T DE 69418976T DE 69418976 T DE69418976 T DE 69418976T DE 69418976 D1 DE69418976 D1 DE 69418976D1
Authority
DE
Germany
Prior art keywords
fuse
integrated circuit
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69418976T
Other languages
English (en)
Other versions
DE69418976T2 (de
Inventor
Richard Fournel
Serge Fruhauf
Francois Taillet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Publication of DE69418976D1 publication Critical patent/DE69418976D1/de
Application granted granted Critical
Publication of DE69418976T2 publication Critical patent/DE69418976T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
DE69418976T 1993-11-30 1994-11-08 Schmelzsicherung für integrierte Schaltung Expired - Lifetime DE69418976T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9314330A FR2713398B1 (fr) 1993-11-30 1993-11-30 Fusible pour circuit intégré.

Publications (2)

Publication Number Publication Date
DE69418976D1 true DE69418976D1 (de) 1999-07-15
DE69418976T2 DE69418976T2 (de) 1999-10-07

Family

ID=9453378

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69418976T Expired - Lifetime DE69418976T2 (de) 1993-11-30 1994-11-08 Schmelzsicherung für integrierte Schaltung

Country Status (5)

Country Link
US (2) US5665627A (de)
EP (1) EP0655783B1 (de)
JP (1) JP3105753B2 (de)
DE (1) DE69418976T2 (de)
FR (1) FR2713398B1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19604776A1 (de) * 1996-02-09 1997-08-14 Siemens Ag Auftrennbare Verbindungsbrücke (Fuse) und verbindbare Leitungsunterbrechung (Anti-Fuse), sowie Verfahren zur Herstellung und Aktivierung einer Fuse und einer Anti-Fuse
DE19652325C1 (de) * 1996-12-16 1998-05-07 Siemens Ag Integrierte Halbleiterschaltung mit Kapazitäts-Redundanz
US6323534B1 (en) 1999-04-16 2001-11-27 Micron Technology, Inc. Fuse for use in a semiconductor device
US6344679B1 (en) 1999-11-19 2002-02-05 International Business Machines Corporation Diode with alterable conductivity and method of making same
US6246243B1 (en) * 2000-01-21 2001-06-12 Analog Devices, Inc. Semi-fusible link system
US6687168B2 (en) 2002-01-18 2004-02-03 Hewlett-Packard Development Company, L.P. Method for writing data bits to a memory array
JP4127678B2 (ja) 2004-02-27 2008-07-30 株式会社東芝 半導体装置及びそのプログラミング方法
KR101659834B1 (ko) * 2010-03-31 2016-09-27 삼성전자주식회사 반도체 퓨즈 회로, 상기 반도체 퓨즈 회로를 포함하는 반도체 장치, 및 상기 반도체 장치를 포함하는 반도체 모듈

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3955270A (en) * 1973-08-31 1976-05-11 Bell Telephone Laboratories, Incorporated Methods for making semiconductor devices
US4451839A (en) * 1980-09-12 1984-05-29 National Semiconductor Corporation Bilateral zener trim
US4403399A (en) * 1981-09-28 1983-09-13 Harris Corporation Method of fabricating a vertical fuse utilizing epitaxial deposition and special masking
US4517403A (en) * 1983-05-16 1985-05-14 Atlantic Richfield Company Series connected solar cells and method of formation
JPH0770599B2 (ja) * 1986-08-19 1995-07-31 富士通株式会社 半導体装置の製造方法
JPS6348837A (ja) * 1986-08-19 1988-03-01 Fujitsu Ltd 逆ヒユ−ズ素子
US4935645A (en) * 1988-03-02 1990-06-19 Dallas Semiconductor Corporation Fusing and detection circuit
NL8800846A (nl) * 1988-04-05 1989-11-01 Philips Nv Geintegreerde schakeling met een programmeerbare cel.
US5008855A (en) * 1989-07-18 1991-04-16 Actel Corporation Method of programming anti-fuse element
KR920007171A (ko) * 1990-09-05 1992-04-28 김광호 고신뢰성 반도체장치
US5334880A (en) * 1991-04-30 1994-08-02 International Business Machines Corporation Low voltage programmable storage element
US5327024A (en) * 1992-07-02 1994-07-05 Quicklogic Corporation Field programmable antifuse device and programming method therefor
US5110754A (en) * 1991-10-04 1992-05-05 Micron Technology, Inc. Method of making a DRAM capacitor for use as an programmable antifuse for redundancy repair/options on a DRAM
US5231316A (en) * 1991-10-29 1993-07-27 Lattice Semiconductor Corporation Temperature compensated cmos voltage to current converter
JPH05267415A (ja) * 1992-03-18 1993-10-15 Fujitsu Ltd 半導体装置
US5298784A (en) * 1992-03-27 1994-03-29 International Business Machines Corporation Electrically programmable antifuse using metal penetration of a junction
US5414364A (en) * 1993-09-08 1995-05-09 Actel Corporation Apparatus and method for measuring programmed antifuse resistance

Also Published As

Publication number Publication date
JP3105753B2 (ja) 2000-11-06
FR2713398B1 (fr) 1996-01-19
EP0655783B1 (de) 1999-06-09
EP0655783A1 (de) 1995-05-31
US5665627A (en) 1997-09-09
US5969403A (en) 1999-10-19
FR2713398A1 (fr) 1995-06-09
DE69418976T2 (de) 1999-10-07
JPH07221188A (ja) 1995-08-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition