ATE167977T1 - Herstellung und test eines integrierten schaltkreises unter verwendung von testpunkten hoher dichte - Google Patents

Herstellung und test eines integrierten schaltkreises unter verwendung von testpunkten hoher dichte

Info

Publication number
ATE167977T1
ATE167977T1 AT91908938T AT91908938T ATE167977T1 AT E167977 T1 ATE167977 T1 AT E167977T1 AT 91908938 T AT91908938 T AT 91908938T AT 91908938 T AT91908938 T AT 91908938T AT E167977 T1 ATE167977 T1 AT E167977T1
Authority
AT
Austria
Prior art keywords
transistor
wafer
testing
die
probe points
Prior art date
Application number
AT91908938T
Other languages
English (en)
Inventor
Glenn J Leedy
Original Assignee
Glenn J Leedy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Glenn J Leedy filed Critical Glenn J Leedy
Application granted granted Critical
Publication of ATE167977T1 publication Critical patent/ATE167977T1/de

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/006Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation at wafer scale level, i.e. wafer scale integration [WSI]
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/06711Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06716Elastic
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/073Multiple probes
    • G01R1/07307Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/073Multiple probes
    • G01R1/07307Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/0735Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card arranged on a flexible frame or film
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2886Features relating to contacting the IC under test, e.g. probe heads; chucks
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits
    • G01R31/3181Functional testing
    • G01R31/3185Reconfiguring for testing, e.g. LSSD, partitioning
    • G01R31/318505Test of Modular systems, e.g. Wafers, MCM's
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits
    • G01R31/3181Functional testing
    • G01R31/3185Reconfiguring for testing, e.g. LSSD, partitioning
    • G01R31/318505Test of Modular systems, e.g. Wafers, MCM's
    • G01R31/318511Wafer Test
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits
    • G01R31/3181Functional testing
    • G01R31/319Tester hardware, i.e. output processing circuits
    • G01R31/31903Tester hardware, i.e. output processing circuits tester configuration
    • G01R31/31905Interface with the device under test [DUT], e.g. arrangements between the test head and the DUT, mechanical aspects, fixture
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits
    • G01R31/3181Functional testing
    • G01R31/319Tester hardware, i.e. output processing circuits
    • G01R31/31903Tester hardware, i.e. output processing circuits tester configuration
    • G01R31/31912Tester/user interface
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70653Metrology techniques
    • G03F7/70658Electrical testing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/232Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising connection or disconnection of parts of a device in response to a measurement
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/073Multiple probes
    • G01R1/07307Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07314Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/286External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2863Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/286External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2868Complete testing stations; systems; procedures; software aspects
    • G01R31/287Procedures; Software aspects
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63Vias, e.g. via plugs
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155Manufacturing circuit on or in base
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49764Method of mechanical manufacture with testing or indicating

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Human Computer Interaction (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)
  • ing And Chemical Polishing (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
AT91908938T 1990-02-16 1991-02-14 Herstellung und test eines integrierten schaltkreises unter verwendung von testpunkten hoher dichte ATE167977T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/482,135 US5103557A (en) 1988-05-16 1990-02-16 Making and testing an integrated circuit using high density probe points

Publications (1)

Publication Number Publication Date
ATE167977T1 true ATE167977T1 (de) 1998-07-15

Family

ID=23914838

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91908938T ATE167977T1 (de) 1990-02-16 1991-02-14 Herstellung und test eines integrierten schaltkreises unter verwendung von testpunkten hoher dichte

Country Status (6)

Country Link
US (1) US5103557A (de)
EP (2) EP0515577B1 (de)
JP (2) JPH05507177A (de)
AT (1) ATE167977T1 (de)
DE (1) DE69129692D1 (de)
WO (1) WO1991012706A1 (de)

Families Citing this family (194)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5476211A (en) 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
US5829128A (en) 1993-11-16 1998-11-03 Formfactor, Inc. Method of mounting resilient contact structures to semiconductor devices
US5917707A (en) 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
US6288561B1 (en) * 1988-05-16 2001-09-11 Elm Technology Corporation Method and apparatus for probing, testing, burn-in, repairing and programming of integrated circuits in a closed environment using a single apparatus
US5539324A (en) * 1988-09-30 1996-07-23 Micron Technology, Inc. Universal wafer carrier for wafer level die burn-in
US5634267A (en) * 1991-06-04 1997-06-03 Micron Technology, Inc. Method and apparatus for manufacturing known good semiconductor die
US5640762A (en) 1988-09-30 1997-06-24 Micron Technology, Inc. Method and apparatus for manufacturing known good semiconductor die
US5160779A (en) * 1989-11-30 1992-11-03 Hoya Corporation Microprobe provided circuit substrate and method for producing the same
US7511520B2 (en) * 1990-08-29 2009-03-31 Micron Technology, Inc. Universal wafer carrier for wafer level die burn-in
US5663654A (en) 1990-08-29 1997-09-02 Micron Technology, Inc. Universal wafer carrier for wafer level die burn-in
US5679977A (en) * 1990-09-24 1997-10-21 Tessera, Inc. Semiconductor chip assemblies, methods of making same and components for same
US5148266A (en) * 1990-09-24 1992-09-15 Ist Associates, Inc. Semiconductor chip assemblies having interposer and flexible lead
US7198969B1 (en) 1990-09-24 2007-04-03 Tessera, Inc. Semiconductor chip assemblies, methods of making same and components for same
US5148265A (en) * 1990-09-24 1992-09-15 Ist Associates, Inc. Semiconductor chip assemblies with fan-in leads
US5528600A (en) * 1991-01-28 1996-06-18 Actel Corporation Testability circuits for logic arrays
US5541525A (en) * 1991-06-04 1996-07-30 Micron Technology, Inc. Carrier for testing an unpackaged semiconductor die
US6219908B1 (en) * 1991-06-04 2001-04-24 Micron Technology, Inc. Method and apparatus for manufacturing known good semiconductor die
US5495179A (en) * 1991-06-04 1996-02-27 Micron Technology, Inc. Carrier having interchangeable substrate used for testing of semiconductor dies
US6828812B2 (en) * 1991-06-04 2004-12-07 Micron Technology, Inc. Test apparatus for testing semiconductor dice including substrate with penetration limiting contacts for making electrical connections
US5716218A (en) * 1991-06-04 1998-02-10 Micron Technology, Inc. Process for manufacturing an interconnect for testing a semiconductor die
US5585282A (en) * 1991-06-04 1996-12-17 Micron Technology, Inc. Process for forming a raised portion on a projecting contact for electrical testing of a semiconductor
US5519332A (en) * 1991-06-04 1996-05-21 Micron Technology, Inc. Carrier for testing an unpackaged semiconductor die
US5487999A (en) * 1991-06-04 1996-01-30 Micron Technology, Inc. Method for fabricating a penetration limited contact having a rough textured surface
US6340894B1 (en) 1991-06-04 2002-01-22 Micron Technology, Inc. Semiconductor testing apparatus including substrate with contact members and conductive polymer interconnect
GB2263980B (en) * 1992-02-07 1996-04-10 Marconi Gec Ltd Apparatus and method for testing bare dies
US6714625B1 (en) * 1992-04-08 2004-03-30 Elm Technology Corporation Lithography device for semiconductor circuit pattern generation
KR940001341A (ko) * 1992-06-29 1994-01-11 디. 아이. 캐플란 전자 장치로의 빠른 전기 접근을 위한 순간 접속법
US5489538A (en) * 1992-08-21 1996-02-06 Lsi Logic Corporation Method of die burn-in
US5366906A (en) * 1992-10-16 1994-11-22 Martin Marietta Corporation Wafer level integration and testing
EP0615131A1 (de) * 1993-03-10 1994-09-14 Co-Operative Facility For Aging Tester Development Sonde für Halbleiterscheiben mit integrierten Schaltelementen
US5414371A (en) * 1993-03-25 1995-05-09 Probes Associates, Inc. Semiconductor device test probe ring apparatus and method of manufacture
WO1998011445A1 (en) * 1996-09-13 1998-03-19 International Business Machines Corporation Probe structure having a plurality of discrete insulated probe tips
US5396032A (en) * 1993-05-04 1995-03-07 Alcatel Network Systems, Inc. Method and apparatus for providing electrical access to devices in a multi-chip module
US5450414A (en) * 1993-05-17 1995-09-12 At&T Corp. Partial-scan built-in self-testing circuit having improved testability
US5420520A (en) * 1993-06-11 1995-05-30 International Business Machines Corporation Method and apparatus for testing of integrated circuit chips
EP0629867B1 (de) * 1993-06-16 1999-01-27 Nitto Denko Corporation Sondenkonstruktion
JPH0720208A (ja) * 1993-07-02 1995-01-24 Mitsubishi Electric Corp 被測定素子のテスト方法及びテストシステム
US5559446A (en) * 1993-07-19 1996-09-24 Tokyo Electron Kabushiki Kaisha Probing method and device
US5483741A (en) * 1993-09-03 1996-01-16 Micron Technology, Inc. Method for fabricating a self limiting silicon based interconnect for testing bare semiconductor dice
US5478779A (en) * 1994-03-07 1995-12-26 Micron Technology, Inc. Electrically conductive projections and semiconductor processing method of forming same
US5326428A (en) 1993-09-03 1994-07-05 Micron Semiconductor, Inc. Method for testing semiconductor circuitry for operability and method of forming apparatus for testing semiconductor circuitry for operability
US20020053734A1 (en) 1993-11-16 2002-05-09 Formfactor, Inc. Probe card assembly and kit, and methods of making same
US7064566B2 (en) * 1993-11-16 2006-06-20 Formfactor, Inc. Probe card assembly and kit
US20070228110A1 (en) * 1993-11-16 2007-10-04 Formfactor, Inc. Method Of Wirebonding That Utilizes A Gas Flow Within A Capillary From Which A Wire Is Played Out
US20030199179A1 (en) * 1993-11-16 2003-10-23 Formfactor, Inc. Contact tip structure for microelectronic interconnection elements and method of making same
US6835898B2 (en) * 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US7073254B2 (en) 1993-11-16 2006-07-11 Formfactor, Inc. Method for mounting a plurality of spring contact elements
US6727580B1 (en) 1993-11-16 2004-04-27 Formfactor, Inc. Microelectronic spring contact elements
US6482013B2 (en) 1993-11-16 2002-11-19 Formfactor, Inc. Microelectronic spring contact element and electronic component having a plurality of spring contact elements
US6624648B2 (en) 1993-11-16 2003-09-23 Formfactor, Inc. Probe card assembly
US6064213A (en) * 1993-11-16 2000-05-16 Formfactor, Inc. Wafer-level burn-in and test
US6525555B1 (en) * 1993-11-16 2003-02-25 Formfactor, Inc. Wafer-level burn-in and test
US6741085B1 (en) 1993-11-16 2004-05-25 Formfactor, Inc. Contact carriers (tiles) for populating larger substrates with spring contacts
US7200930B2 (en) 1994-11-15 2007-04-10 Formfactor, Inc. Probe for semiconductor devices
US7084656B1 (en) 1993-11-16 2006-08-01 Formfactor, Inc. Probe for semiconductor devices
US6246247B1 (en) 1994-11-15 2001-06-12 Formfactor, Inc. Probe card assembly and kit, and methods of using same
US7579269B2 (en) * 1993-11-16 2009-08-25 Formfactor, Inc. Microelectronic spring contact elements
JP2616413B2 (ja) * 1993-11-22 1997-06-04 日本電気株式会社 リペアデータの編集装置およびリペアデータの編集方法
DE69534124T2 (de) * 1994-04-18 2006-05-04 Micron Technology, Inc. Verfahren und Vorrichtung zum automatischen Positionieren elektronischer Würfel in Bauteilverpackungen
US6163866A (en) * 1994-07-29 2000-12-19 Sun Microsystems, Inc. System level IC testing arrangement and method
US5513430A (en) * 1994-08-19 1996-05-07 Motorola, Inc. Method for manufacturing a probe
US6577148B1 (en) 1994-08-31 2003-06-10 Motorola, Inc. Apparatus, method, and wafer used for testing integrated circuits formed on a product wafer
WO1996007921A1 (en) * 1994-09-09 1996-03-14 Micromodule Systems Membrane probing of circuits
EP0779989A4 (de) * 1994-09-09 1998-01-07 Micromodule Systems Inc Abtasten von schaltkreisen mit einem membranfühler
KR100384265B1 (ko) * 1994-10-28 2003-08-14 클리크 앤드 소파 홀딩스 인코포레이티드 프로그램가능한고집적전자검사장치
KR100366746B1 (ko) * 1994-11-15 2003-01-09 폼팩터, 인크. 2개의 전자 장치의 조립체
EP0792462B1 (de) * 1994-11-15 2004-08-04 Formfactor, Inc. Testkarte und ihre anwendung
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US5629617A (en) * 1995-01-06 1997-05-13 Hewlett-Packard Company Multiplexing electronic test probe
US5602490A (en) * 1995-03-14 1997-02-11 Genrad, Inc. Connector for automatic test equipment
US5991699A (en) * 1995-05-04 1999-11-23 Kla Instruments Corporation Detecting groups of defects in semiconductor feature space
JP3058919B2 (ja) * 1995-05-26 2000-07-04 フォームファクター,インコーポレイテッド 犠牲基板を用いた相互接続部及び先端の製造
US20100065963A1 (en) * 1995-05-26 2010-03-18 Formfactor, Inc. Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out
JP3608795B2 (ja) * 1995-05-26 2005-01-12 フォームファクター,インコーポレイテッド より大きな基板にばね接触子を定置させるための接触子担体(タイル)
US5971253A (en) 1995-07-31 1999-10-26 Tessera, Inc. Microelectronic component mounting with deformable shell terminals
US5600257A (en) * 1995-08-09 1997-02-04 International Business Machines Corporation Semiconductor wafer test and burn-in
US5905383A (en) * 1995-08-29 1999-05-18 Tektronix, Inc. Multi-chip module development substrate
US6483328B1 (en) * 1995-11-09 2002-11-19 Formfactor, Inc. Probe card for probing wafers with raised contact elements
FR2741476B1 (fr) * 1995-11-17 1998-01-02 Commissariat Energie Atomique Procede de realisation collective de puces avec des electrodes selectivement recouvertes par un depot
US8033838B2 (en) 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
US5888837A (en) * 1996-04-16 1999-03-30 General Electric Company Chip burn-in and test structure and method
KR100460470B1 (ko) * 1996-05-17 2005-02-28 폼팩터, 인크. 웨이퍼레벨번-인공정및시험
TW341747B (en) * 1996-05-17 1998-10-01 Formfactor Inc Techniques of fabricating interconnection elements and tip structures for same using sacrificial substrates
CN1145802C (zh) * 1996-05-17 2004-04-14 福姆法克特公司 微电子弹簧接触元件及电子部件
US6027958A (en) * 1996-07-11 2000-02-22 Kopin Corporation Transferred flexible integrated circuit
US5896038A (en) * 1996-11-08 1999-04-20 W. L. Gore & Associates, Inc. Method of wafer level burn-in
US5966022A (en) * 1996-11-08 1999-10-12 W. L. Gore & Associates, Inc. Wafer level burn-in system
US5886535A (en) * 1996-11-08 1999-03-23 W. L. Gore & Associates, Inc. Wafer level burn-in base unit substrate and assembly
US5804459A (en) * 1996-11-15 1998-09-08 International Business Machines Corporation Method for charge enhanced defect breakdown to improve yield and reliability
US6635514B1 (en) * 1996-12-12 2003-10-21 Tessera, Inc. Compliant package with conductive elastomeric posts
US6551844B1 (en) * 1997-01-15 2003-04-22 Formfactor, Inc. Test assembly including a test die for testing a semiconductor product die
US6690185B1 (en) 1997-01-15 2004-02-10 Formfactor, Inc. Large contactor with multiple, aligned contactor units
US6429029B1 (en) 1997-01-15 2002-08-06 Formfactor, Inc. Concurrent design and subsequent partitioning of product and test die
US6520778B1 (en) 1997-02-18 2003-02-18 Formfactor, Inc. Microelectronic contact structures, and methods of making same
US6025731A (en) * 1997-03-21 2000-02-15 Micron Technology, Inc. Hybrid interconnect and system for testing semiconductor dice
US5915167A (en) * 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
FR2762140B1 (fr) * 1997-04-10 2000-01-14 Mesatronic Procede de fabrication d'une carte a pointes de contact multiple pour le test des puces semiconductrices
US6147506A (en) * 1997-04-29 2000-11-14 International Business Machines Corporation Wafer test fixture using a biasing bladder and methodology
US6028437A (en) * 1997-05-19 2000-02-22 Si Diamond Technology, Inc. Probe head assembly
FR2764386B1 (fr) * 1997-06-06 1999-07-16 Commissariat Energie Atomique Support d'electrodes comportant au moins une electrode recouverte par un depot et systeme de lecture de ce support
US6329829B1 (en) 1997-08-22 2001-12-11 Micron Technology, Inc. Interconnect and system for making temporary electrical connections to semiconductor components
GB9800957D0 (en) 1998-01-17 1998-03-11 Process Intelligence Limited Test probe interface unit and method for manufacturing the same
US6807734B2 (en) 1998-02-13 2004-10-26 Formfactor, Inc. Microelectronic contact structures, and methods of making same
US6677776B2 (en) 1998-05-11 2004-01-13 Micron Technology, Inc. Method and system having switching network for testing semiconductor components on a substrate
US6337577B1 (en) 1998-05-11 2002-01-08 Micron Technology, Inc. Interconnect and system for testing bumped semiconductor components with on-board multiplex circuitry for expanding tester resources
US6246250B1 (en) 1998-05-11 2001-06-12 Micron Technology, Inc. Probe card having on-board multiplex circuitry for expanding tester resources
US6441315B1 (en) * 1998-11-10 2002-08-27 Formfactor, Inc. Contact structures with blades having a wiping motion
US6255126B1 (en) 1998-12-02 2001-07-03 Formfactor, Inc. Lithographic contact elements
US6491968B1 (en) 1998-12-02 2002-12-10 Formfactor, Inc. Methods for making spring interconnect structures
CN1276259C (zh) * 1998-12-02 2006-09-20 佛姆法克特股份有限公司 光刻接触元件
US6672875B1 (en) 1998-12-02 2004-01-06 Formfactor, Inc. Spring interconnect structures
EP1141735A2 (de) * 1998-12-31 2001-10-10 Formfactor, Inc. Testverfahren und -aufbau mit einem testchip zum testen eines halbleiter-produkchips
US6456099B1 (en) 1998-12-31 2002-09-24 Formfactor, Inc. Special contact points for accessing internal circuitry of an integrated circuit
JP3737899B2 (ja) * 1999-01-29 2006-01-25 日東電工株式会社 半導体素子の検査方法およびそのための異方導電性フィルム
US6980017B1 (en) * 1999-03-10 2005-12-27 Micron Technology, Inc. Test interconnect for bumped semiconductor components and method of fabrication
US7382142B2 (en) * 2000-05-23 2008-06-03 Nanonexus, Inc. High density interconnect system having rapid fabrication cycle
US7349223B2 (en) 2000-05-23 2008-03-25 Nanonexus, Inc. Enhanced compliant probe card systems having improved planarity
US7247035B2 (en) * 2000-06-20 2007-07-24 Nanonexus, Inc. Enhanced stress metal spring contactor
US20070245553A1 (en) * 1999-05-27 2007-10-25 Chong Fu C Fine pitch microfabricated spring contact structure & method
US6812718B1 (en) * 1999-05-27 2004-11-02 Nanonexus, Inc. Massively parallel interface for electronic circuits
US7215131B1 (en) 1999-06-07 2007-05-08 Formfactor, Inc. Segmented contactor
US7189077B1 (en) 1999-07-30 2007-03-13 Formfactor, Inc. Lithographic type microelectronic spring structures with improved contours
US6939474B2 (en) 1999-07-30 2005-09-06 Formfactor, Inc. Method for forming microelectronic spring structures on a substrate
US6888362B2 (en) 2000-11-09 2005-05-03 Formfactor, Inc. Test head assembly for electronic components with plurality of contoured microelectronic spring contacts
US6780001B2 (en) 1999-07-30 2004-08-24 Formfactor, Inc. Forming tool for forming a contoured microelectronic spring mold
JP2001230164A (ja) * 2000-02-18 2001-08-24 Mitsubishi Electric Corp 半導体装置の製造履歴情報搭載方法およびその方法により製造された半導体装置
US7262611B2 (en) * 2000-03-17 2007-08-28 Formfactor, Inc. Apparatuses and methods for planarizing a semiconductor contactor
JP3984773B2 (ja) * 2000-03-17 2007-10-03 株式会社ルネサステクノロジ 半導体装置
US6476630B1 (en) * 2000-04-13 2002-11-05 Formfactor, Inc. Method for testing signal paths between an integrated circuit wafer and a wafer tester
US6724209B1 (en) 2000-04-13 2004-04-20 Ralph G. Whitten Method for testing signal paths between an integrated circuit wafer and a wafer tester
US7579848B2 (en) * 2000-05-23 2009-08-25 Nanonexus, Inc. High density interconnect system for IC packages and interconnect assemblies
US7952373B2 (en) 2000-05-23 2011-05-31 Verigy (Singapore) Pte. Ltd. Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies
DE10029835C1 (de) 2000-06-16 2001-10-25 Infineon Technologies Ag Integrierte Schaltung mit Testbetrieb und Testanordnung zum Testen einer integrierten Schaltung
JP4250347B2 (ja) * 2000-08-21 2009-04-08 株式会社東芝 不良クラスタリング検索方法、不良クラスタリング検索装置、不良クラスタリング検索プログラムを格納した記録媒体、救済回路最適化方法、工程管理方法、クリーンルーム管理方法、半導体装置の製造方法、問題工程及び問題装置の抽出方法、問題工程及び問題装置の抽出プログラムを格納した記録媒体、問題工程及び問題装置の抽出装置、及び検索母体のスクラップ判断方法
DE10043731C2 (de) * 2000-09-05 2003-06-26 Infineon Technologies Ag Meßsonde, deren Verwendung und Herstellung und Meßsystem zum Erfassen von elektrischen Signalen in einer integrierten Halbleiterschaltung
DE10152490A1 (de) * 2000-11-06 2002-05-08 Ceramtec Ag Außenelektroden an piezokeramischen Vielschichtaktoren
US6830940B1 (en) * 2000-11-16 2004-12-14 Optical Communication Products, Inc. Method and apparatus for performing whole wafer burn-in
US6477095B2 (en) * 2000-12-28 2002-11-05 Infineon Technologies Richmond, Lp Method for reading semiconductor die information in a parallel test and burn-in system
US6753688B2 (en) * 2001-04-10 2004-06-22 International Business Machines Corporation Interconnect package cluster probe short removal apparatus and method
US6748994B2 (en) * 2001-04-11 2004-06-15 Avery Dennison Corporation Label applicator, method and label therefor
JP2004534957A (ja) * 2001-07-11 2004-11-18 フォームファクター,インコーポレイテッド プローブ・カードの製造方法
US6729019B2 (en) * 2001-07-11 2004-05-04 Formfactor, Inc. Method of manufacturing a probe card
US6772642B2 (en) * 2001-08-24 2004-08-10 Damian A. Hajduk High throughput mechanical property and bulge testing of materials libraries
US6650102B2 (en) * 2001-08-24 2003-11-18 Symyx Technologies, Inc. High throughput mechanical property testing of materials libraries using a piezoelectric
US7153399B2 (en) * 2001-08-24 2006-12-26 Nanonexus, Inc. Method and apparatus for producing uniform isotropic stresses in a sputtered film
US6673638B1 (en) * 2001-11-14 2004-01-06 Kla-Tencor Corporation Method and apparatus for the production of process sensitive lithographic features
JP4190269B2 (ja) * 2002-07-09 2008-12-03 新光電気工業株式会社 素子内蔵基板製造方法およびその装置
JP3816034B2 (ja) 2002-07-16 2006-08-30 松下電器産業株式会社 メモリ混載半導体集積回路
US7402897B2 (en) 2002-08-08 2008-07-22 Elm Technology Corporation Vertical system integration
US6822465B1 (en) * 2002-08-09 2004-11-23 Unisys Corporation Method of regulating the temperature of integrated circuit modules, using a heat exchanger with a face of a solid malleable metal and a release agent
US6764866B1 (en) * 2003-02-21 2004-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for qualifying multiple device under test (DUT) test head
US6900652B2 (en) * 2003-06-13 2005-05-31 Solid State Measurements, Inc. Flexible membrane probe and method of use thereof
DE602004013008T2 (de) * 2003-07-16 2009-05-14 3M Innovative Properties Co., St. Paul Laminate und deren herstellungsverfahren
US7111257B2 (en) * 2003-09-12 2006-09-19 International Business Machines Corporation Using a partial metal level mask for early test results
US20050167837A1 (en) * 2004-01-21 2005-08-04 International Business Machines Corporation Device with area array pads for test probing
US7883019B2 (en) * 2005-09-02 2011-02-08 Hynix Semiconductor Inc. Integrated circuit with embedded FeRAM-based RFID
EP1947539A4 (de) * 2005-09-27 2011-05-18 Advantest Corp Steuerverfahren und steuersystem
TWI263293B (en) * 2005-09-28 2006-10-01 Star Techn Inc Probe card for integrated circuits
US7956633B2 (en) * 2006-03-06 2011-06-07 Formfactor, Inc. Stacked guard structures
US7888955B2 (en) * 2007-09-25 2011-02-15 Formfactor, Inc. Method and apparatus for testing devices using serially controlled resources
US7977959B2 (en) 2007-09-27 2011-07-12 Formfactor, Inc. Method and apparatus for testing devices using serially controlled intelligent switches
US20090164931A1 (en) * 2007-12-19 2009-06-25 Formfactor, Inc. Method and Apparatus for Managing Test Result Data Generated by a Semiconductor Test System
US20090224793A1 (en) * 2008-03-07 2009-09-10 Formfactor, Inc. Method And Apparatus For Designing A Custom Test System
US8122309B2 (en) * 2008-03-11 2012-02-21 Formfactor, Inc. Method and apparatus for processing failures during semiconductor device testing
US7924035B2 (en) * 2008-07-15 2011-04-12 Formfactor, Inc. Probe card assembly for electronic device testing with DC test resource sharing
US8095841B2 (en) * 2008-08-19 2012-01-10 Formfactor, Inc. Method and apparatus for testing semiconductor devices with autonomous expected value generation
US7944225B2 (en) 2008-09-26 2011-05-17 Formfactor, Inc. Method and apparatus for providing a tester integrated circuit for testing a semiconductor device under test
US8205173B2 (en) * 2010-06-17 2012-06-19 Taiwan Semiconductor Manufacturing Company, Ltd. Physical failure analysis guiding methods
US9184012B2 (en) 2012-12-19 2015-11-10 Allegro Microsystems, Llc Integrated circuit fuse and method of fabricating the integrated circuit fuse
CN103366798B (zh) * 2013-07-10 2016-02-17 格科微电子(上海)有限公司 动态随机存取存储器及制造方法、半导体封装件及封装方法
US9672316B2 (en) 2013-07-17 2017-06-06 Arm Limited Integrated circuit manufacture using direct write lithography
US9435855B2 (en) 2013-11-19 2016-09-06 Teradyne, Inc. Interconnect for transmitting signals between a device and a tester
US9312199B2 (en) 2013-12-05 2016-04-12 International Business Machines Corporation Intelligent chip placement within a three-dimensional chip stack
US9568940B2 (en) 2013-12-05 2017-02-14 International Business Machines Corporation Multiple active vertically aligned cores for three-dimensional chip stack
US9594114B2 (en) 2014-06-26 2017-03-14 Teradyne, Inc. Structure for transmitting signals in an application space between a device under test and test electronics
US9799575B2 (en) 2015-12-16 2017-10-24 Pdf Solutions, Inc. Integrated circuit containing DOEs of NCEM-enabled fill cells
US10199283B1 (en) 2015-02-03 2019-02-05 Pdf Solutions, Inc. Method for processing a semiconductor wager using non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three parallel conductive stripes using a moving stage with beam deflection to account for motion of the stage
US10978438B1 (en) 2015-12-16 2021-04-13 Pdf Solutions, Inc. IC with test structures and E-beam pads embedded within a contiguous standard cell area
US10593604B1 (en) 2015-12-16 2020-03-17 Pdf Solutions, Inc. Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells
US9929063B1 (en) 2016-04-04 2018-03-27 Pdf Solutions, Inc. Process for making an integrated circuit that includes NCEM-Enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates
US9627371B1 (en) 2016-04-04 2017-04-18 Pdf Solutions, Inc. Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, GATE-short-configured, GATECNT-short-configured, and AA-short-configured, NCEM-enabled fill cells
US9905553B1 (en) 2016-04-04 2018-02-27 Pdf Solutions, Inc. Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATECNT-short-configured, and metal-short-configured, NCEM-enabled fill cells
US9748153B1 (en) 2017-03-29 2017-08-29 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second does of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including tip-to-side short configure
US9773774B1 (en) 2017-03-30 2017-09-26 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including chamfer short configured fill cells, and the second DOE including corner short configured fill cells
US9768083B1 (en) 2017-06-27 2017-09-19 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including snake open configured fill cells
US9786649B1 (en) 2017-06-27 2017-10-10 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including stitch open configured fill cells
US10096530B1 (en) 2017-06-28 2018-10-09 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including stitch open configured fill cells
US9865583B1 (en) 2017-06-28 2018-01-09 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including stitch open configured fill cells
US10677815B2 (en) 2018-06-08 2020-06-09 Teradyne, Inc. Test system having distributed resources
US11862901B2 (en) 2020-12-15 2024-01-02 Teradyne, Inc. Interposer
KR102892995B1 (ko) * 2021-03-24 2025-12-05 삼성전자주식회사 반도체 소자 검사용 프로브 및 이를 포함하는 프로브 카드
US20230247795A1 (en) 2022-01-28 2023-08-03 The Research Foundation For The State University Of New York Regenerative preheater for phase change cooling applications

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3405361A (en) * 1964-01-08 1968-10-08 Signetics Corp Fluid actuable multi-point microprobe for semiconductors
US3618201A (en) * 1968-02-19 1971-11-09 Hitachi Ltd Method of fabricating lsi circuits
US3702025A (en) * 1969-05-12 1972-11-07 Honeywell Inc Discretionary interconnection process
FR2128937A5 (de) * 1971-03-09 1972-10-27 Ragonot Ets
US4038599A (en) * 1974-12-30 1977-07-26 International Business Machines Corporation High density wafer contacting and test system
US4088490A (en) * 1976-06-14 1978-05-09 International Business Machines Corporation Single level masking process with two positive photoresist layers
JPS5376757A (en) * 1976-12-20 1978-07-07 Oki Electric Ind Co Ltd Photoetching method
JPS53145576A (en) * 1977-05-25 1978-12-18 Hitachi Ltd Measuring method of electrical characteristics of semiconductor wafers and probe card used in said method
US4115120A (en) * 1977-09-29 1978-09-19 International Business Machines Corporation Method of forming thin film patterns by differential pre-baking of resist
JPS5459267U (de) * 1977-10-03 1979-04-24
DE2833780A1 (de) * 1978-08-02 1980-02-21 Bosch Gmbh Robert Verfahren zur zuverlaessigkeitspruefung von halbleiterbauelementen
US4411719A (en) * 1980-02-07 1983-10-25 Westinghouse Electric Corp. Apparatus and method for tape bonding and testing of integrated circuit chips
US4409319A (en) * 1981-07-15 1983-10-11 International Business Machines Corporation Electron beam exposed positive resist mask process
US4409139A (en) * 1981-08-10 1983-10-11 The Salk Institute For Biological Studies Gonadostatin
US4585991A (en) * 1982-06-03 1986-04-29 Texas Instruments Incorporated Solid state multiprobe testing apparatus
US4564584A (en) * 1983-12-30 1986-01-14 Ibm Corporation Photoresist lift-off process for fabricating semiconductor devices
JPS60198838A (ja) * 1984-03-23 1985-10-08 Nec Corp プロ−ブカ−ド
US4649339A (en) * 1984-04-25 1987-03-10 Honeywell Inc. Integrated circuit interface
US4636722A (en) * 1984-05-21 1987-01-13 Probe-Rite, Inc. High density probe-head with isolated and shielded transmission lines
US4585727A (en) * 1984-07-27 1986-04-29 Probe-Tronics, Inc. Fixed point method and apparatus for probing semiconductor devices
JPS6225433A (ja) * 1985-07-25 1987-02-03 Fuji Electric Co Ltd 半導体素子特性測定装置
US4853627A (en) * 1985-12-23 1989-08-01 Triquint Semiconductor, Inc. Wafer probes
JPH0763064B2 (ja) * 1986-03-31 1995-07-05 株式会社日立製作所 Ic素子における配線接続方法
DE8617408U1 (de) * 1986-06-30 1986-08-21 Siemens AG, 1000 Berlin und 8000 München Kontaktiervorrichtung für zu prüfende Bauelemente der Mikroelektronik
EP0259163A3 (de) * 1986-09-05 1989-07-12 Tektronix, Inc. Sonde für Halbleiterwafer
KR880004322A (ko) * 1986-09-05 1988-06-03 로버트 에스. 헐스 집적회로 프로브시스템
US4764485A (en) * 1987-01-05 1988-08-16 General Electric Company Method for producing via holes in polymer dielectrics
JPS63208237A (ja) * 1987-02-25 1988-08-29 Hitachi Ltd 半導体装置の測定装置
JPS63152243U (de) * 1987-03-25 1988-10-06
EP0298219A3 (de) * 1987-06-08 1990-08-01 Tektronix Inc. Methode und Vorrichtung zum Prüfen von nicht-gekapselten integrierten Schaltkreisen in einem hybriden Schaltkreis
JPS6439559A (en) * 1987-08-06 1989-02-09 Nec Corp Probe card
JPH01128381A (ja) * 1987-11-12 1989-05-22 Fujitsu Ltd Lsiウエハの試験方法
US4820976A (en) * 1987-11-24 1989-04-11 Advanced Micro Devices, Inc. Test fixture capable of electrically testing an integrated circuit die having a planar array of contacts
FR2630588A1 (fr) * 1988-04-22 1989-10-27 Philips Nv Procede pour realiser une configuration d'interconnexion sur un dispositif semiconducteur notamment un circuit a densite d'integration elevee
JPH01285946A (ja) * 1988-05-13 1989-11-16 Matsushita Electric Ind Co Ltd パターン形成方法
US4924589A (en) * 1988-05-16 1990-05-15 Leedy Glenn J Method of making and testing an integrated circuit
JPH0244747A (ja) * 1988-08-04 1990-02-14 Tokyo Electron Ltd 検査装置
JPH02235374A (ja) * 1989-03-08 1990-09-18 Mitsubishi Electric Corp 不揮発性半導体メモリのテスト方法
US4983250A (en) * 1989-06-16 1991-01-08 Microelectronics And Computer Technology Method of laser patterning an electrical interconnect

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JP3323846B2 (ja) 2002-09-09
EP0515577A1 (de) 1992-12-02
DE69129692D1 (de) 1998-08-06
WO1991012706A1 (en) 1991-08-22
EP0515577A4 (en) 1993-08-11
JP2000200812A (ja) 2000-07-18
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JPH05507177A (ja) 1993-10-14
US5103557A (en) 1992-04-14

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