ATE167428T1 - Diamant auf substrat für elektronische anwendungen - Google Patents

Diamant auf substrat für elektronische anwendungen

Info

Publication number
ATE167428T1
ATE167428T1 AT91906651T AT91906651T ATE167428T1 AT E167428 T1 ATE167428 T1 AT E167428T1 AT 91906651 T AT91906651 T AT 91906651T AT 91906651 T AT91906651 T AT 91906651T AT E167428 T1 ATE167428 T1 AT E167428T1
Authority
AT
Austria
Prior art keywords
substrate
diamond
disclosed
electronic applications
polycrystalline diamond
Prior art date
Application number
AT91906651T
Other languages
German (de)
English (en)
Inventor
Diwakar Garg
Wilman Tsai
Paul Nigel Dyer
Fred M Kimock
Robert L Iampietro
Original Assignee
Monsanto Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monsanto Co filed Critical Monsanto Co
Application granted granted Critical
Publication of ATE167428T1 publication Critical patent/ATE167428T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/279—Diamond only control of diamond crystallography
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/271—Diamond only using hot filaments
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Carbon And Carbon Compounds (AREA)
AT91906651T 1990-03-20 1991-03-18 Diamant auf substrat für elektronische anwendungen ATE167428T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49716190A 1990-03-20 1990-03-20

Publications (1)

Publication Number Publication Date
ATE167428T1 true ATE167428T1 (de) 1998-07-15

Family

ID=23975715

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91906651T ATE167428T1 (de) 1990-03-20 1991-03-18 Diamant auf substrat für elektronische anwendungen

Country Status (6)

Country Link
US (1) US5126206A (enExample)
EP (1) EP0526468B1 (enExample)
JP (1) JP3136307B2 (enExample)
AT (1) ATE167428T1 (enExample)
DE (1) DE69129625T2 (enExample)
WO (1) WO1991014572A1 (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5370299A (en) * 1992-04-23 1994-12-06 Sumitomo Electric Industries, Ltd. Bonding tool having diamond head and method of manufacturing the same
US5575644A (en) * 1993-03-11 1996-11-19 American Orthodontics Orthodontic appliance
US5389400A (en) * 1993-04-07 1995-02-14 Applied Sciences, Inc. Method for making a diamond/carbon/carbon composite useful as an integral dielectric heat sink
US5837081A (en) * 1993-04-07 1998-11-17 Applied Sciences, Inc. Method for making a carbon-carbon composite
JPH0794303A (ja) * 1993-05-04 1995-04-07 Kobe Steel Ltd 高配向性ダイヤモンド薄膜サーミスタ
JP3549227B2 (ja) * 1993-05-14 2004-08-04 株式会社神戸製鋼所 高配向性ダイヤモンド薄膜
JPH0794805A (ja) * 1993-05-14 1995-04-07 Kobe Steel Ltd 高配向性ダイヤモンド薄膜磁気検出素子及び磁気検出装置
US5442199A (en) * 1993-05-14 1995-08-15 Kobe Steel Usa, Inc. Diamond hetero-junction rectifying element
JPH0786311A (ja) * 1993-05-14 1995-03-31 Kobe Steel Ltd 高配向性ダイヤモンド薄膜電界効果トランジスタ
US5371383A (en) * 1993-05-14 1994-12-06 Kobe Steel Usa Inc. Highly oriented diamond film field-effect transistor
JP3755904B2 (ja) * 1993-05-14 2006-03-15 株式会社神戸製鋼所 ダイヤモンド整流素子
EP0637078A1 (en) * 1993-07-29 1995-02-01 Motorola, Inc. A semiconductor device with improved heat dissipation
US5388027A (en) * 1993-07-29 1995-02-07 Motorola, Inc. Electronic circuit assembly with improved heatsinking
US5354717A (en) * 1993-07-29 1994-10-11 Motorola, Inc. Method for making a substrate structure with improved heat dissipation
US5541566A (en) * 1994-02-28 1996-07-30 Olin Corporation Diamond-like carbon coating for magnetic cores
EP0755460B1 (en) * 1994-04-06 1999-01-27 The Regents Of The University Of California Process to produce diamond films
US5559367A (en) * 1994-07-12 1996-09-24 International Business Machines Corporation Diamond-like carbon for use in VLSI and ULSI interconnect systems
US5525815A (en) * 1994-10-03 1996-06-11 General Electric Company Diamond film structure with high thermal conductivity
US5803967A (en) * 1995-05-31 1998-09-08 Kobe Steel Usa Inc. Method of forming diamond devices having textured and highly oriented diamond layers therein
US5858477A (en) * 1996-12-10 1999-01-12 Akashic Memories Corporation Method for producing recording media having protective overcoats of highly tetrahedral amorphous carbon
US6416865B1 (en) * 1998-10-30 2002-07-09 Sumitomo Electric Industries, Ltd. Hard carbon film and surface acoustic-wave substrate
US6120910A (en) * 1999-03-01 2000-09-19 Szenics; Jonathan M. Stringed musical instrument
KR20010039728A (ko) * 1999-07-22 2001-05-15 가와하라 하지메 이온 소스
JP2002338388A (ja) * 2001-02-15 2002-11-27 Ngk Insulators Ltd ダイヤモンドコート部材
US6541303B2 (en) * 2001-06-20 2003-04-01 Micron Technology, Inc. Method for conducting heat in a flip-chip assembly
US20040122515A1 (en) * 2002-11-21 2004-06-24 Xi Chu Prosthetic valves and methods of manufacturing
US20050025973A1 (en) * 2003-07-25 2005-02-03 Slutz David E. CVD diamond-coated composite substrate containing a carbide-forming material and ceramic phases and method for making same
EP1666413B1 (en) 2003-08-01 2015-12-09 Toyo Tanso Co., Ltd. Tantalum carbide, method for producing tantalum carbide, tantalum carbide wiring and tantalum carbide electrode
US20060024140A1 (en) * 2004-07-30 2006-02-02 Wolff Edward C Removable tap chasers and tap systems including the same
US8637127B2 (en) 2005-06-27 2014-01-28 Kennametal Inc. Composite article with coolant channels and tool fabrication method
US7687156B2 (en) 2005-08-18 2010-03-30 Tdy Industries, Inc. Composite cutting inserts and methods of making the same
US7550841B2 (en) * 2006-03-23 2009-06-23 Intel Corporation Methods of forming a diamond micro-channel structure and resulting devices
MX2008012771A (es) 2006-04-27 2008-11-28 Tdy Ind Inc Trepano modular para tierra con fresa fija, cuerpos de trepanos modulares para tierra con fresa fija, y metodos relacionados.
EP2078101A2 (en) 2006-10-25 2009-07-15 TDY Industries, Inc. Articles having improved resistance to thermal cracking
JP2009076694A (ja) * 2007-09-20 2009-04-09 Panasonic Corp 窒化物半導体装置およびその製造方法
US8790439B2 (en) 2008-06-02 2014-07-29 Kennametal Inc. Composite sintered powder metal articles
CN102112642B (zh) 2008-06-02 2013-11-06 Tdy工业有限责任公司 烧结碳化物-金属合金复合物
US8025112B2 (en) 2008-08-22 2011-09-27 Tdy Industries, Inc. Earth-boring bits and other parts including cemented carbide
US8272816B2 (en) 2009-05-12 2012-09-25 TDY Industries, LLC Composite cemented carbide rotary cutting tools and rotary cutting tool blanks
US8308096B2 (en) 2009-07-14 2012-11-13 TDY Industries, LLC Reinforced roll and method of making same
US9643236B2 (en) 2009-11-11 2017-05-09 Landis Solutions Llc Thread rolling die and method of making same
US8800848B2 (en) 2011-08-31 2014-08-12 Kennametal Inc. Methods of forming wear resistant layers on metallic surfaces
US9016406B2 (en) 2011-09-22 2015-04-28 Kennametal Inc. Cutting inserts for earth-boring bits
JP2016507902A (ja) 2013-02-07 2016-03-10 セラムテック ゲゼルシャフト ミット ベシュレンクテル ハフツングＣｅｒａｍＴｅｃ ＧｍｂＨ セラミック基板に設けられたマルチレベル金属被覆部
US20160161991A1 (en) * 2014-12-08 2016-06-09 Rubicon Technology, Inc. Ultra-Thin, Passively Cooled Sapphire Windows
US9558724B2 (en) * 2014-12-18 2017-01-31 Gerald T. Mearini Guitar pick having CVD diamond or DLC coating
GB201516814D0 (en) * 2015-09-23 2015-11-04 Element Six Technologies Ltd Method of fabricating a plurality of single crystal CVD synthetic diamonds

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4434188A (en) * 1981-12-17 1984-02-28 National Institute For Researches In Inorganic Materials Method for synthesizing diamond
JPS5930709A (ja) * 1982-08-13 1984-02-18 Toa Nenryo Kogyo Kk 炭素膜及び／又は炭素粒子の製造方法
JPS60191097A (ja) * 1984-03-08 1985-09-28 Mitsubishi Metal Corp 人工ダイヤモンドの析出生成方法
US4698256A (en) * 1984-04-02 1987-10-06 American Cyanamid Company Articles coated with adherent diamondlike carbon films
JPS60221395A (ja) * 1984-04-19 1985-11-06 Yoshio Imai ダイヤモンド薄膜の製造方法
JPS61106494A (ja) * 1984-10-29 1986-05-24 Kyocera Corp ダイヤモンド被膜部材及びその製法
US4643741A (en) * 1984-12-14 1987-02-17 Hongchang Yu Thermostable polycrystalline diamond body, method and mold for producing same
JPS61163276A (ja) * 1985-01-09 1986-07-23 Showa Denko Kk Ｃｖｄ法ダイヤモンド合成に使用する基板の処理法
JPS61163273A (ja) * 1985-01-14 1986-07-23 Sumitomo Electric Ind Ltd 被覆硬質部材
US4725345A (en) * 1985-04-22 1988-02-16 Kabushiki Kaisha Kenwood Method for forming a hard carbon thin film on article and applications thereof
JPS62119A (ja) * 1985-06-26 1987-01-06 Nec Corp 発振器
EP0221531A3 (en) * 1985-11-06 1992-02-19 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha High heat conductive insulated substrate and method of manufacturing the same
US4731296A (en) * 1986-07-03 1988-03-15 Mitsubishi Kinzoku Kabushiki Kaisha Diamond-coated tungsten carbide-base sintered hard alloy material for insert of a cutting tool
US4900628A (en) * 1986-07-23 1990-02-13 Sumitomo Electric Industries, Ltd. Gaseous phase synthesized diamond and method for synthesizing same
EP0308676A3 (de) * 1987-09-25 1990-01-10 Siemens Aktiengesellschaft Spannungsarme Umhüllung für elektrische und elektronische Bauelemente, insbesondere Hybridschaltungen
JP2694663B2 (ja) * 1989-01-26 1997-12-24 スズキ株式会社 微分相関器

Also Published As

Publication number Publication date
DE69129625D1 (de) 1998-07-23
US5126206A (en) 1992-06-30
DE69129625T2 (de) 1998-11-12
JPH05506064A (ja) 1993-09-02
JP3136307B2 (ja) 2001-02-19
WO1991014572A1 (en) 1991-10-03
EP0526468A1 (en) 1993-02-10
EP0526468A4 (enExample) 1994-02-09
EP0526468B1 (en) 1998-06-17

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