DE69129625D1 - Diamant auf substrat für elektronische anwendungen - Google Patents
Diamant auf substrat für elektronische anwendungenInfo
- Publication number
- DE69129625D1 DE69129625D1 DE69129625T DE69129625T DE69129625D1 DE 69129625 D1 DE69129625 D1 DE 69129625D1 DE 69129625 T DE69129625 T DE 69129625T DE 69129625 T DE69129625 T DE 69129625T DE 69129625 D1 DE69129625 D1 DE 69129625D1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- diamond
- disclosed
- electronic applications
- polycrystalline diamond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/279—Diamond only control of diamond crystallography
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US49716190A | 1990-03-20 | 1990-03-20 | |
PCT/US1991/001828 WO1991014572A1 (en) | 1990-03-20 | 1991-03-18 | Diamond-on-a-substrate for electronic applications |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69129625D1 true DE69129625D1 (de) | 1998-07-23 |
DE69129625T2 DE69129625T2 (de) | 1998-11-12 |
Family
ID=23975715
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69129625T Expired - Fee Related DE69129625T2 (de) | 1990-03-20 | 1991-03-18 | Diamant auf substrat für elektronische anwendungen |
Country Status (6)
Country | Link |
---|---|
US (1) | US5126206A (de) |
EP (1) | EP0526468B1 (de) |
JP (1) | JP3136307B2 (de) |
AT (1) | ATE167428T1 (de) |
DE (1) | DE69129625T2 (de) |
WO (1) | WO1991014572A1 (de) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5370299A (en) * | 1992-04-23 | 1994-12-06 | Sumitomo Electric Industries, Ltd. | Bonding tool having diamond head and method of manufacturing the same |
US5575644A (en) * | 1993-03-11 | 1996-11-19 | American Orthodontics | Orthodontic appliance |
US5389400A (en) * | 1993-04-07 | 1995-02-14 | Applied Sciences, Inc. | Method for making a diamond/carbon/carbon composite useful as an integral dielectric heat sink |
US5837081A (en) * | 1993-04-07 | 1998-11-17 | Applied Sciences, Inc. | Method for making a carbon-carbon composite |
JPH0794303A (ja) * | 1993-05-04 | 1995-04-07 | Kobe Steel Ltd | 高配向性ダイヤモンド薄膜サーミスタ |
US5442199A (en) * | 1993-05-14 | 1995-08-15 | Kobe Steel Usa, Inc. | Diamond hetero-junction rectifying element |
JPH0786311A (ja) * | 1993-05-14 | 1995-03-31 | Kobe Steel Ltd | 高配向性ダイヤモンド薄膜電界効果トランジスタ |
JP3755904B2 (ja) * | 1993-05-14 | 2006-03-15 | 株式会社神戸製鋼所 | ダイヤモンド整流素子 |
US5371383A (en) * | 1993-05-14 | 1994-12-06 | Kobe Steel Usa Inc. | Highly oriented diamond film field-effect transistor |
JPH0794805A (ja) * | 1993-05-14 | 1995-04-07 | Kobe Steel Ltd | 高配向性ダイヤモンド薄膜磁気検出素子及び磁気検出装置 |
JP3549227B2 (ja) * | 1993-05-14 | 2004-08-04 | 株式会社神戸製鋼所 | 高配向性ダイヤモンド薄膜 |
EP0637078A1 (de) * | 1993-07-29 | 1995-02-01 | Motorola, Inc. | Eine Halbleiteranordnung mit verbesserter Wärmezerstreuung |
US5388027A (en) * | 1993-07-29 | 1995-02-07 | Motorola, Inc. | Electronic circuit assembly with improved heatsinking |
US5354717A (en) * | 1993-07-29 | 1994-10-11 | Motorola, Inc. | Method for making a substrate structure with improved heat dissipation |
US5541566A (en) * | 1994-02-28 | 1996-07-30 | Olin Corporation | Diamond-like carbon coating for magnetic cores |
WO1995027806A1 (en) * | 1994-04-06 | 1995-10-19 | The Regents Of The University Of California | Process to produce diamond films |
US5559367A (en) * | 1994-07-12 | 1996-09-24 | International Business Machines Corporation | Diamond-like carbon for use in VLSI and ULSI interconnect systems |
US5525815A (en) * | 1994-10-03 | 1996-06-11 | General Electric Company | Diamond film structure with high thermal conductivity |
US5803967A (en) * | 1995-05-31 | 1998-09-08 | Kobe Steel Usa Inc. | Method of forming diamond devices having textured and highly oriented diamond layers therein |
US5858477A (en) * | 1996-12-10 | 1999-01-12 | Akashic Memories Corporation | Method for producing recording media having protective overcoats of highly tetrahedral amorphous carbon |
US6416865B1 (en) * | 1998-10-30 | 2002-07-09 | Sumitomo Electric Industries, Ltd. | Hard carbon film and surface acoustic-wave substrate |
US6120910A (en) * | 1999-03-01 | 2000-09-19 | Szenics; Jonathan M. | Stringed musical instrument |
KR20010039728A (ko) * | 1999-07-22 | 2001-05-15 | 가와하라 하지메 | 이온 소스 |
JP2002338388A (ja) * | 2001-02-15 | 2002-11-27 | Ngk Insulators Ltd | ダイヤモンドコート部材 |
US6541303B2 (en) * | 2001-06-20 | 2003-04-01 | Micron Technology, Inc. | Method for conducting heat in a flip-chip assembly |
US20040122515A1 (en) * | 2002-11-21 | 2004-06-24 | Xi Chu | Prosthetic valves and methods of manufacturing |
US20050025973A1 (en) * | 2003-07-25 | 2005-02-03 | Slutz David E. | CVD diamond-coated composite substrate containing a carbide-forming material and ceramic phases and method for making same |
EP1666413B1 (de) * | 2003-08-01 | 2015-12-09 | Toyo Tanso Co., Ltd. | Tantalcarbid, verfahren zur herstellung von tantalcarbid, tantalcarbiddraht und tantalcarbidelektrode |
US20060024140A1 (en) * | 2004-07-30 | 2006-02-02 | Wolff Edward C | Removable tap chasers and tap systems including the same |
US8637127B2 (en) | 2005-06-27 | 2014-01-28 | Kennametal Inc. | Composite article with coolant channels and tool fabrication method |
US7687156B2 (en) | 2005-08-18 | 2010-03-30 | Tdy Industries, Inc. | Composite cutting inserts and methods of making the same |
US7550841B2 (en) * | 2006-03-23 | 2009-06-23 | Intel Corporation | Methods of forming a diamond micro-channel structure and resulting devices |
ES2386626T3 (es) | 2006-04-27 | 2012-08-23 | Tdy Industries, Inc. | Cabezas perforadoras de suelos modulares con cuchillas fijas y cuerpos de cabezas perforadoras de suelos modulares con cuchillas fijas |
BRPI0717332A2 (pt) | 2006-10-25 | 2013-10-29 | Tdy Ind Inc | Artigos tendo resistência aperfeiçoada à rachadura térmica |
JP2009076694A (ja) * | 2007-09-20 | 2009-04-09 | Panasonic Corp | 窒化物半導体装置およびその製造方法 |
JP2011523681A (ja) | 2008-06-02 | 2011-08-18 | ティーディーワイ・インダストリーズ・インコーポレーテッド | 超硬合金−金属合金複合体 |
US8790439B2 (en) | 2008-06-02 | 2014-07-29 | Kennametal Inc. | Composite sintered powder metal articles |
US8025112B2 (en) | 2008-08-22 | 2011-09-27 | Tdy Industries, Inc. | Earth-boring bits and other parts including cemented carbide |
US8272816B2 (en) | 2009-05-12 | 2012-09-25 | TDY Industries, LLC | Composite cemented carbide rotary cutting tools and rotary cutting tool blanks |
US8308096B2 (en) | 2009-07-14 | 2012-11-13 | TDY Industries, LLC | Reinforced roll and method of making same |
US9643236B2 (en) | 2009-11-11 | 2017-05-09 | Landis Solutions Llc | Thread rolling die and method of making same |
US8800848B2 (en) | 2011-08-31 | 2014-08-12 | Kennametal Inc. | Methods of forming wear resistant layers on metallic surfaces |
US9016406B2 (en) | 2011-09-22 | 2015-04-28 | Kennametal Inc. | Cutting inserts for earth-boring bits |
CN105074913B (zh) * | 2013-02-07 | 2018-05-22 | 陶瓷技术有限责任公司 | 陶瓷衬底上的多层金属化 |
US20160161991A1 (en) * | 2014-12-08 | 2016-06-09 | Rubicon Technology, Inc. | Ultra-Thin, Passively Cooled Sapphire Windows |
US9558724B2 (en) * | 2014-12-18 | 2017-01-31 | Gerald T. Mearini | Guitar pick having CVD diamond or DLC coating |
GB201516814D0 (en) * | 2015-09-23 | 2015-11-04 | Element Six Technologies Ltd | Method of fabricating a plurality of single crystal CVD synthetic diamonds |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4434188A (en) * | 1981-12-17 | 1984-02-28 | National Institute For Researches In Inorganic Materials | Method for synthesizing diamond |
JPS5930709A (ja) * | 1982-08-13 | 1984-02-18 | Toa Nenryo Kogyo Kk | 炭素膜及び/又は炭素粒子の製造方法 |
JPS60191097A (ja) * | 1984-03-08 | 1985-09-28 | Mitsubishi Metal Corp | 人工ダイヤモンドの析出生成方法 |
US4698256A (en) * | 1984-04-02 | 1987-10-06 | American Cyanamid Company | Articles coated with adherent diamondlike carbon films |
JPS60221395A (ja) * | 1984-04-19 | 1985-11-06 | Yoshio Imai | ダイヤモンド薄膜の製造方法 |
JPS61106494A (ja) * | 1984-10-29 | 1986-05-24 | Kyocera Corp | ダイヤモンド被膜部材及びその製法 |
US4643741A (en) * | 1984-12-14 | 1987-02-17 | Hongchang Yu | Thermostable polycrystalline diamond body, method and mold for producing same |
JPS61163276A (ja) * | 1985-01-09 | 1986-07-23 | Showa Denko Kk | Cvd法ダイヤモンド合成に使用する基板の処理法 |
JPS61163273A (ja) * | 1985-01-14 | 1986-07-23 | Sumitomo Electric Ind Ltd | 被覆硬質部材 |
US4725345A (en) * | 1985-04-22 | 1988-02-16 | Kabushiki Kaisha Kenwood | Method for forming a hard carbon thin film on article and applications thereof |
JPS62119A (ja) * | 1985-06-26 | 1987-01-06 | Nec Corp | 発振器 |
EP0221531A3 (de) * | 1985-11-06 | 1992-02-19 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Isoliertes gut wärmeleitendes Substrat und sein Herstellungsverfahren |
US4731296A (en) * | 1986-07-03 | 1988-03-15 | Mitsubishi Kinzoku Kabushiki Kaisha | Diamond-coated tungsten carbide-base sintered hard alloy material for insert of a cutting tool |
US4900628A (en) * | 1986-07-23 | 1990-02-13 | Sumitomo Electric Industries, Ltd. | Gaseous phase synthesized diamond and method for synthesizing same |
EP0308676A3 (de) * | 1987-09-25 | 1990-01-10 | Siemens Aktiengesellschaft | Spannungsarme Umhüllung für elektrische und elektronische Bauelemente, insbesondere Hybridschaltungen |
JP2694663B2 (ja) * | 1989-01-26 | 1997-12-24 | スズキ株式会社 | 微分相関器 |
-
1990
- 1990-09-06 US US07/578,637 patent/US5126206A/en not_active Expired - Lifetime
-
1991
- 1991-03-18 DE DE69129625T patent/DE69129625T2/de not_active Expired - Fee Related
- 1991-03-18 JP JP03507272A patent/JP3136307B2/ja not_active Expired - Lifetime
- 1991-03-18 EP EP91906651A patent/EP0526468B1/de not_active Expired - Lifetime
- 1991-03-18 AT AT91906651T patent/ATE167428T1/de not_active IP Right Cessation
- 1991-03-18 WO PCT/US1991/001828 patent/WO1991014572A1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
DE69129625T2 (de) | 1998-11-12 |
EP0526468B1 (de) | 1998-06-17 |
WO1991014572A1 (en) | 1991-10-03 |
ATE167428T1 (de) | 1998-07-15 |
JP3136307B2 (ja) | 2001-02-19 |
US5126206A (en) | 1992-06-30 |
JPH05506064A (ja) | 1993-09-02 |
EP0526468A4 (de) | 1994-02-09 |
EP0526468A1 (de) | 1993-02-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: MORGAN CHEMICAL PRODUCTS, INC., ROSELAND, N.J., US |
|
8339 | Ceased/non-payment of the annual fee |