KR970701920A - 나노 크리스탈의 전구 물질을 사용하여 낮은 온도에서 형성된 iv족 반도체 박막(group iv semiconductor thin films formed at low temperature using nanocrystal precursors) - Google Patents

나노 크리스탈의 전구 물질을 사용하여 낮은 온도에서 형성된 iv족 반도체 박막(group iv semiconductor thin films formed at low temperature using nanocrystal precursors)

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Publication number
KR970701920A
KR970701920A KR1019960705214A KR19960705214A KR970701920A KR 970701920 A KR970701920 A KR 970701920A KR 1019960705214 A KR1019960705214 A KR 1019960705214A KR 19960705214 A KR19960705214 A KR 19960705214A KR 970701920 A KR970701920 A KR 970701920A
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South Korea
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thin film
semiconductor material
thin films
group
nanocrystals
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KR1019960705214A
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English (en)
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골드스타인 애버리 엔
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매뉴엘 피. 셀든
스타파이어 일렌트로닉 디벨럽먼트 앤드 마켓팅, 리미티드
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Application filed by 매뉴엘 피. 셀든, 스타파이어 일렌트로닉 디벨럽먼트 앤드 마켓팅, 리미티드 filed Critical 매뉴엘 피. 셀든
Publication of KR970701920A publication Critical patent/KR970701920A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본 발명의 실리콘 및 게르마늄 Ⅳ족 반도체 물질의 박막은 나노크리스탈 전국 물질로부터 2.5 내지 25㎚의 범위에서 제조된다. 본 발명에 따라 실리콘 또는 게르마늄의 고체의 연속적인 박막은 기판상에 반도체 물질의 나노크리스탈의 인접층을 적층한 다음 반도체 물질의 벌크 용융 온도 이하의 온도지만 나노크리스탈을 용융하는데 적당한 온도로 층을 가열하여 연속적인 액체 박막을 냉각시킨다. 그에 따라 생성된 박막은 도핑되거나 또는 내부에 처리될 수 있다. 낮은 처리 온도는 하부층인 기판 및 다른 관련 구조물 상에서 덜 엄격한 열적 요구 조건으로 박막을 형성할 수 있도록 하기 때문에 전자제품 제조, 태양열 변환 기술등에 응용될 수 있다.

Description

나노 크리스탈의 전구 물질을 사용하여 낮은 온도에서 형성된 Ⅳ족 반도체 박막(GROUP Ⅳ SEMICONDUCTOR THIN FILMS FORMED AT LOW TEMPERATURE USING NANOCRYSTAL PRECURSORS)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (7)

  1. 표면에 Ⅳ족 반도체 물질의 연속적인 고체 박막을 형성하는 방법에 있어서, 기판 표면상에 반도체 물질의 나노크리스탈로된 얇은 인접하는 층을 적층하는 단계와; 반도체 물질의 벌크 용융 온도 이하의 온도에서 나노크리스탈을 용융하여 연속적인 액체 박막을 형성하는 단계와; 액체의 박막을 냉각하여 고체의 박막을 형성하는 단계를 포함하는 것을 특징으로 하는 방법.
  2. 제1항에 있어서, 상기 반도체 물질을 실리콘인 것을 특징으로 하는 방법.
  3. 제1항에 있어서, 상기 반도체 물질은 게르마늄인 것을 특징으로 하는 방법.
  4. 제1항에 있어서, 상기 나노크리스탈은 1에서 6㎚까지의 평균 반경을 갖는 것을 특징으로 하는 방법.
  5. 연속적인 Ⅳ족 반도체 박막은 상기 청구항 1의 공정에 의해 형성되는 것을 특징으로 하는 방법.
  6. 연속적인 Ⅳ족 반도체 박막은 상기 청구항 2의 공정에 의해 형성되는 것을 특징으로 하는 방법.
  7. 제1항에 있어서, 상기 액체 박막을 냉각하여 고체의 박막을 형성하는 단계는 2.5에서 25㎚의 범위에서 박막을 형성하는 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960705214A 1994-03-24 1995-03-20 나노 크리스탈의 전구 물질을 사용하여 낮은 온도에서 형성된 iv족 반도체 박막(group iv semiconductor thin films formed at low temperature using nanocrystal precursors) KR970701920A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/217,160 1994-03-24
US08/217,160 US5576248A (en) 1994-03-24 1994-03-24 Group IV semiconductor thin films formed at low temperature using nanocrystal precursors
PCT/US1995/003509 WO1995026043A1 (en) 1994-03-24 1995-03-20 Group iv semiconductor thin films formed at low temperature using nanocrystal precursors

Publications (1)

Publication Number Publication Date
KR970701920A true KR970701920A (ko) 1997-04-12

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KR1019960705214A KR970701920A (ko) 1994-03-24 1995-03-20 나노 크리스탈의 전구 물질을 사용하여 낮은 온도에서 형성된 iv족 반도체 박막(group iv semiconductor thin films formed at low temperature using nanocrystal precursors)

Country Status (6)

Country Link
US (1) US5576248A (ko)
EP (1) EP0752157A4 (ko)
JP (1) JPH09510829A (ko)
KR (1) KR970701920A (ko)
IL (1) IL113094A0 (ko)
WO (1) WO1995026043A1 (ko)

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Publication number Publication date
JPH09510829A (ja) 1997-10-28
WO1995026043A1 (en) 1995-09-28
IL113094A0 (en) 1995-06-29
EP0752157A4 (en) 1998-05-06
EP0752157A1 (en) 1997-01-08
US5576248A (en) 1996-11-19

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