KR970701920A - 나노 크리스탈의 전구 물질을 사용하여 낮은 온도에서 형성된 iv족 반도체 박막(group iv semiconductor thin films formed at low temperature using nanocrystal precursors) - Google Patents
나노 크리스탈의 전구 물질을 사용하여 낮은 온도에서 형성된 iv족 반도체 박막(group iv semiconductor thin films formed at low temperature using nanocrystal precursors)Info
- Publication number
- KR970701920A KR970701920A KR1019960705214A KR19960705214A KR970701920A KR 970701920 A KR970701920 A KR 970701920A KR 1019960705214 A KR1019960705214 A KR 1019960705214A KR 19960705214 A KR19960705214 A KR 19960705214A KR 970701920 A KR970701920 A KR 970701920A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- semiconductor material
- thin films
- group
- nanocrystals
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract 15
- 239000004065 semiconductor Substances 0.000 title claims abstract 11
- 239000002159 nanocrystal Substances 0.000 title claims abstract 7
- 239000002243 precursor Substances 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract 9
- 239000007788 liquid Substances 0.000 claims abstract 4
- 238000002844 melting Methods 0.000 claims abstract 4
- 230000008018 melting Effects 0.000 claims abstract 4
- 239000007787 solid Substances 0.000 claims abstract 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract 3
- 229910052710 silicon Inorganic materials 0.000 claims abstract 3
- 239000010703 silicon Substances 0.000 claims abstract 3
- 239000000758 substrate Substances 0.000 claims abstract 3
- 229910052732 germanium Inorganic materials 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims 8
- 238000001816 cooling Methods 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
- C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02601—Nanoparticles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- Recrystallisation Techniques (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
본 발명의 실리콘 및 게르마늄 Ⅳ족 반도체 물질의 박막은 나노크리스탈 전국 물질로부터 2.5 내지 25㎚의 범위에서 제조된다. 본 발명에 따라 실리콘 또는 게르마늄의 고체의 연속적인 박막은 기판상에 반도체 물질의 나노크리스탈의 인접층을 적층한 다음 반도체 물질의 벌크 용융 온도 이하의 온도지만 나노크리스탈을 용융하는데 적당한 온도로 층을 가열하여 연속적인 액체 박막을 냉각시킨다. 그에 따라 생성된 박막은 도핑되거나 또는 내부에 처리될 수 있다. 낮은 처리 온도는 하부층인 기판 및 다른 관련 구조물 상에서 덜 엄격한 열적 요구 조건으로 박막을 형성할 수 있도록 하기 때문에 전자제품 제조, 태양열 변환 기술등에 응용될 수 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (7)
- 표면에 Ⅳ족 반도체 물질의 연속적인 고체 박막을 형성하는 방법에 있어서, 기판 표면상에 반도체 물질의 나노크리스탈로된 얇은 인접하는 층을 적층하는 단계와; 반도체 물질의 벌크 용융 온도 이하의 온도에서 나노크리스탈을 용융하여 연속적인 액체 박막을 형성하는 단계와; 액체의 박막을 냉각하여 고체의 박막을 형성하는 단계를 포함하는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 반도체 물질을 실리콘인 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 반도체 물질은 게르마늄인 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 나노크리스탈은 1에서 6㎚까지의 평균 반경을 갖는 것을 특징으로 하는 방법.
- 연속적인 Ⅳ족 반도체 박막은 상기 청구항 1의 공정에 의해 형성되는 것을 특징으로 하는 방법.
- 연속적인 Ⅳ족 반도체 박막은 상기 청구항 2의 공정에 의해 형성되는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 액체 박막을 냉각하여 고체의 박막을 형성하는 단계는 2.5에서 25㎚의 범위에서 박막을 형성하는 것을 특징으로 하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/217,160 US5576248A (en) | 1994-03-24 | 1994-03-24 | Group IV semiconductor thin films formed at low temperature using nanocrystal precursors |
US08/217,160 | 1994-03-24 | ||
PCT/US1995/003509 WO1995026043A1 (en) | 1994-03-24 | 1995-03-20 | Group iv semiconductor thin films formed at low temperature using nanocrystal precursors |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970701920A true KR970701920A (ko) | 1997-04-12 |
Family
ID=22809904
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960705214A KR970701920A (ko) | 1994-03-24 | 1995-03-20 | 나노 크리스탈의 전구 물질을 사용하여 낮은 온도에서 형성된 iv족 반도체 박막(group iv semiconductor thin films formed at low temperature using nanocrystal precursors) |
Country Status (6)
Country | Link |
---|---|
US (1) | US5576248A (ko) |
EP (1) | EP0752157A4 (ko) |
JP (1) | JPH09510829A (ko) |
KR (1) | KR970701920A (ko) |
IL (1) | IL113094A0 (ko) |
WO (1) | WO1995026043A1 (ko) |
Families Citing this family (56)
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US5670279A (en) * | 1994-03-24 | 1997-09-23 | Starfire Electronic Development & Marketing, Ltd. | Lithography exposure mask derived from nanocrystal precursors and a method of manufacturing the same |
US6126740A (en) * | 1995-09-29 | 2000-10-03 | Midwest Research Institute | Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films |
US5711803A (en) * | 1995-09-29 | 1998-01-27 | Midwest Research Institute | Preparation of a semiconductor thin film |
US5850064A (en) * | 1997-04-11 | 1998-12-15 | Starfire Electronics Development & Marketing, Ltd. | Method for photolytic liquid phase synthesis of silicon and germanium nanocrystalline materials |
US8568684B2 (en) | 2000-10-17 | 2013-10-29 | Nanogram Corporation | Methods for synthesizing submicron doped silicon particles |
US20090075083A1 (en) | 1997-07-21 | 2009-03-19 | Nanogram Corporation | Nanoparticle production and corresponding structures |
US6599631B2 (en) | 2001-01-26 | 2003-07-29 | Nanogram Corporation | Polymer-inorganic particle composites |
US7226966B2 (en) | 2001-08-03 | 2007-06-05 | Nanogram Corporation | Structures incorporating polymer-inorganic particle blends |
US6780765B2 (en) | 1998-08-14 | 2004-08-24 | Avery N. Goldstein | Integrated circuit trenched features and method of producing same |
US6277740B1 (en) * | 1998-08-14 | 2001-08-21 | Avery N. Goldstein | Integrated circuit trenched features and method of producing same |
US6294401B1 (en) | 1998-08-19 | 2001-09-25 | Massachusetts Institute Of Technology | Nanoparticle-based electrical, chemical, and mechanical structures and methods of making same |
US6139626A (en) * | 1998-09-04 | 2000-10-31 | Nec Research Institute, Inc. | Three-dimensionally patterned materials and methods for manufacturing same using nanocrystals |
US6517995B1 (en) * | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
US6918946B2 (en) * | 2001-07-02 | 2005-07-19 | Board Of Regents, The University Of Texas System | Applications of light-emitting nanoparticles |
US8618595B2 (en) * | 2001-07-02 | 2013-12-31 | Merck Patent Gmbh | Applications of light-emitting nanoparticles |
US6846565B2 (en) | 2001-07-02 | 2005-01-25 | Board Of Regents, The University Of Texas System | Light-emitting nanoparticles and method of making same |
US6819845B2 (en) | 2001-08-02 | 2004-11-16 | Ultradots, Inc. | Optical devices with engineered nonlinear nanocomposite materials |
US7005669B1 (en) | 2001-08-02 | 2006-02-28 | Ultradots, Inc. | Quantum dots, nanocomposite materials with quantum dots, devices with quantum dots, and related fabrication methods |
US20030066998A1 (en) | 2001-08-02 | 2003-04-10 | Lee Howard Wing Hoon | Quantum dots of Group IV semiconductor materials |
US6710366B1 (en) | 2001-08-02 | 2004-03-23 | Ultradots, Inc. | Nanocomposite materials with engineered properties |
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US6887297B2 (en) * | 2002-11-08 | 2005-05-03 | Wayne State University | Copper nanocrystals and methods of producing same |
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DE2927086A1 (de) * | 1979-07-04 | 1981-01-22 | Siemens Ag | Verfahren zum herstellen von platten- oder bandfoermigen siliziumkristallkoerpern mit einer der kolumnarstruktur gleichwertigen saeulenstruktur fuer solarzellen |
DE3100776A1 (de) * | 1981-01-13 | 1982-08-12 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von folien aus gesintertem polykristallinen silizium |
US4897360A (en) * | 1987-12-09 | 1990-01-30 | Wisconsin Alumni Research Foundation | Polysilicon thin film process |
US5075257A (en) * | 1990-11-09 | 1991-12-24 | The Board Of Trustees Of The University Of Arkansas | Aerosol deposition and film formation of silicon |
US5262357A (en) * | 1991-11-22 | 1993-11-16 | The Regents Of The University Of California | Low temperature thin films formed from nanocrystal precursors |
-
1994
- 1994-03-24 US US08/217,160 patent/US5576248A/en not_active Expired - Lifetime
-
1995
- 1995-03-20 KR KR1019960705214A patent/KR970701920A/ko not_active Application Discontinuation
- 1995-03-20 JP JP7524769A patent/JPH09510829A/ja active Pending
- 1995-03-20 WO PCT/US1995/003509 patent/WO1995026043A1/en not_active Application Discontinuation
- 1995-03-20 EP EP95913785A patent/EP0752157A4/en not_active Withdrawn
- 1995-03-22 IL IL11309495A patent/IL113094A0/xx unknown
Also Published As
Publication number | Publication date |
---|---|
WO1995026043A1 (en) | 1995-09-28 |
IL113094A0 (en) | 1995-06-29 |
EP0752157A4 (en) | 1998-05-06 |
EP0752157A1 (en) | 1997-01-08 |
US5576248A (en) | 1996-11-19 |
JPH09510829A (ja) | 1997-10-28 |
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