Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70008—Production of exposure light, i.e. light sources
  • G03F7/70016—Production of exposure light, i.e. light sources by discharge lamps
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/26—Bombardment with radiation
  • H01L21/263—Bombardment with radiation with high-energy radiation
  • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J61/00—Gas-discharge or vapour-discharge lamps
  • H01J61/70—Lamps with low-pressure unconstricted discharge having a cold pressure < 400 Torr
  • H01J61/72—Lamps with low-pressure unconstricted discharge having a cold pressure < 400 Torr having a main light-emitting filling of easily vaporisable metal vapour, e.g. mercury
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
  • H05H1/00—Generating plasma; Handling plasma
  • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
  • H05H1/04—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using magnetic fields substantially generated by the discharge in the plasma
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
  • H05H1/00—Generating plasma; Handling plasma
  • H05H1/24—Generating plasma
  • H05H1/52—Generating plasma using exploding wires or spark gaps
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10S148/00—Metal treatment
  • Y10S148/045—Electric field

Landscapes

• Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Plasma & Fusion (AREA)
• Chemical & Material Sciences (AREA)
• Nanotechnology (AREA)
• Spectroscopy & Molecular Physics (AREA)
• General Physics & Mathematics (AREA)
• Optics & Photonics (AREA)
• Mathematical Physics (AREA)
• Theoretical Computer Science (AREA)
• Crystallography & Structural Chemistry (AREA)
• High Energy & Nuclear Physics (AREA)
• Health & Medical Sciences (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Toxicology (AREA)
• Electromagnetism (AREA)
• Drying Of Semiconductors (AREA)
• Plasma Technology (AREA)
• On-Site Construction Work That Accompanies The Preparation And Application Of Concrete (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=22438680

Family Applications (1)

Country Status (12)

Families Citing this family (11)

Family Cites Families (10)

• 1987
  • 1987-12-07 US US07/129,152 patent/US4889605A/en not_active Expired - Lifetime
• 1988
  • 1988-11-30 IL IL88546A patent/IL88546A0/xx unknown
  • 1988-12-02 EP EP89901826A patent/EP0390871B1/de not_active Expired - Lifetime
  • 1988-12-02 JP JP89501777A patent/JPH03501500A/ja active Pending
  • 1988-12-02 WO PCT/US1988/004294 patent/WO1989005515A1/en active IP Right Grant
  • 1988-12-02 DE DE3853919T patent/DE3853919T2/de not_active Expired - Fee Related
  • 1988-12-02 AT AT89901826T patent/ATE123371T1/de active
  • 1988-12-02 KR KR1019890701480A patent/KR930008523B1/ko not_active IP Right Cessation
  • 1988-12-02 AU AU29413/89A patent/AU2941389A/en not_active Abandoned
  • 1988-12-05 ES ES8803711A patent/ES2010381A6/es not_active Expired
  • 1988-12-06 CA CA000585143A patent/CA1307356C/en not_active Expired - Fee Related
  • 1988-12-31 CN CN88108991A patent/CN1043846A/zh active Pending

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