DE3853919T2 - Plasmaeinschnürungssystem und dessen anwendungsverfahren. - Google Patents

Plasmaeinschnürungssystem und dessen anwendungsverfahren.

Info

Publication number
DE3853919T2
DE3853919T2 DE3853919T DE3853919T DE3853919T2 DE 3853919 T2 DE3853919 T2 DE 3853919T2 DE 3853919 T DE3853919 T DE 3853919T DE 3853919 T DE3853919 T DE 3853919T DE 3853919 T2 DE3853919 T2 DE 3853919T2
Authority
DE
Germany
Prior art keywords
plasma
fluid
pinch
establishing
incoherent light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3853919T
Other languages
English (en)
Other versions
DE3853919D1 (de
Inventor
John Asmus
Ralph Lovberg
Keith Boyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
Original Assignee
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California filed Critical University of California
Publication of DE3853919D1 publication Critical patent/DE3853919D1/de
Application granted granted Critical
Publication of DE3853919T2 publication Critical patent/DE3853919T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70016—Production of exposure light, i.e. light sources by discharge lamps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00—Gas-discharge or vapour-discharge lamps
    • H01J61/70—Lamps with low-pressure unconstricted discharge having a cold pressure < 400 Torr
    • H01J61/72—Lamps with low-pressure unconstricted discharge having a cold pressure < 400 Torr having a main light-emitting filling of easily vaporisable metal vapour, e.g. mercury
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/04—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using magnetic fields substantially generated by the discharge in the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/52—Generating plasma using exploding wires or spark gaps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/045—Electric field
DE3853919T 1987-12-07 1988-12-02 Plasmaeinschnürungssystem und dessen anwendungsverfahren. Expired - Fee Related DE3853919T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/129,152 US4889605A (en) 1987-12-07 1987-12-07 Plasma pinch system
PCT/US1988/004294 WO1989005515A1 (en) 1987-12-07 1988-12-02 Plasma pinch system and method of using same

Publications (2)

Publication Number Publication Date
DE3853919D1 DE3853919D1 (de) 1995-07-06
DE3853919T2 true DE3853919T2 (de) 1996-02-15

Family

ID=22438680

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3853919T Expired - Fee Related DE3853919T2 (de) 1987-12-07 1988-12-02 Plasmaeinschnürungssystem und dessen anwendungsverfahren.

Country Status (12)

Country Link
US (1) US4889605A (de)
EP (1) EP0390871B1 (de)
JP (1) JPH03501500A (de)
KR (1) KR930008523B1 (de)
CN (1) CN1043846A (de)
AT (1) ATE123371T1 (de)
AU (1) AU2941389A (de)
CA (1) CA1307356C (de)
DE (1) DE3853919T2 (de)
ES (1) ES2010381A6 (de)
IL (1) IL88546A0 (de)
WO (1) WO1989005515A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE127651T1 (de) * 1989-05-04 1995-09-15 Univ California Vorrichtung und verfahren zur behandlung von materialien.
US5102776A (en) * 1989-11-09 1992-04-07 Cornell Research Foundation, Inc. Method and apparatus for microlithography using x-pinch x-ray source
US6541786B1 (en) * 1997-05-12 2003-04-01 Cymer, Inc. Plasma pinch high energy with debris collector
US6452199B1 (en) * 1997-05-12 2002-09-17 Cymer, Inc. Plasma focus high energy photon source with blast shield
US6277202B1 (en) 1997-08-27 2001-08-21 Environmental Surface Technologies Method and apparatus for utilizing a laser-guided gas-embedded pinchlamp device
MY115490A (en) * 1998-06-26 2003-06-30 Meinan Machinery Works Apparatus and method for centering and feeding log
US6445134B1 (en) 1999-11-30 2002-09-03 Environmental Surface Technologies Inner/outer coaxial tube arrangement for a plasma pinch chamber
US7059249B2 (en) * 2001-01-23 2006-06-13 United Defense Lp Transverse plasma injector ignitor
US8633416B2 (en) * 2005-03-11 2014-01-21 Perkinelmer Health Sciences, Inc. Plasmas and methods of using them
US7557366B2 (en) * 2006-05-04 2009-07-07 Asml Netherlands B.V. Radiation generating device, lithographic apparatus, device manufacturing method and device manufactured thereby
JP2013519211A (ja) 2010-02-09 2013-05-23 エナジェティック・テクノロジー・インコーポレーテッド レーザー駆動の光源

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4007430A (en) * 1969-10-14 1977-02-08 Nasa Continuous plasma laser
US3946382A (en) * 1970-01-28 1976-03-23 The United States Of America As Represented By The Secretary Of The Navy Search radar adaptive video processor
US3946332A (en) * 1974-06-13 1976-03-23 Samis Michael A High power density continuous wave plasma glow jet laser system
US4369514A (en) * 1980-10-30 1983-01-18 Bell Telephone Laboratories, Incorporated Recombination laser
US4450568A (en) * 1981-11-13 1984-05-22 Maxwell Laboratories, Inc. Pumping a photolytic laser utilizing a plasma pinch
US4641316A (en) * 1982-03-01 1987-02-03 Applied Electron Corp. D.C. electron beam method and apparatus for continuous laser excitation
US4454835A (en) * 1982-09-13 1984-06-19 The United States Of America As Represented By The Secretary Of The Navy Internal photolysis reactor
JPS59129772A (ja) * 1983-01-18 1984-07-26 Ushio Inc 光化学蒸着装置
US4525381A (en) * 1983-02-09 1985-06-25 Ushio Denki Kabushiki Kaisha Photochemical vapor deposition apparatus
JPS60175351A (ja) * 1984-02-14 1985-09-09 Nippon Telegr & Teleph Corp <Ntt> Ｘ線発生装置およびｘ線露光法

Also Published As

Publication number Publication date
KR900701034A (ko) 1990-08-17
CN1043846A (zh) 1990-07-11
CA1307356C (en) 1992-09-08
US4889605A (en) 1989-12-26
WO1989005515A1 (en) 1989-06-15
EP0390871A4 (en) 1991-12-11
AU2941389A (en) 1989-07-05
IL88546A0 (en) 1989-06-30
DE3853919D1 (de) 1995-07-06
JPH03501500A (ja) 1991-04-04
KR930008523B1 (ko) 1993-09-09
EP0390871B1 (de) 1995-05-31
ATE123371T1 (de) 1995-06-15
ES2010381A6 (es) 1989-11-01
EP0390871A1 (de) 1990-10-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee