ES2102523T3 - Celula fotovoltaica que comprende un sistema de varios pozos cuanticos en la zona de empobrecimiento de la celula. - Google Patents
Celula fotovoltaica que comprende un sistema de varios pozos cuanticos en la zona de empobrecimiento de la celula.Info
- Publication number
- ES2102523T3 ES2102523T3 ES92921571T ES92921571T ES2102523T3 ES 2102523 T3 ES2102523 T3 ES 2102523T3 ES 92921571 T ES92921571 T ES 92921571T ES 92921571 T ES92921571 T ES 92921571T ES 2102523 T3 ES2102523 T3 ES 2102523T3
- Authority
- ES
- Spain
- Prior art keywords
- cell
- quantic
- empowerment
- wells
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000926 separation method Methods 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Photovoltaic Devices (AREA)
Abstract
UNA CELULA SOLAR FORMADA DE UN SEMICONDUCTOR QUE TIENE UNA RELATIVA ANCHURA DE SEPARACION DE BANDA EB, CARACTERIZADA POR UN SISTEMA DE FUENTE DE MULTI-CUANTOS INCORPORADO EN LA REGION DE AGOTAMIENTO DE LA CELULA, EN LA QUE LAS FUENTES DE CUANTOS CONSTAN DE REGIONES DE SEMICONDUCTORES CON UNA SEPARACION DE BANDA MAS PEQUEÑA SEPARADA POR PEQUEÑAS CANTIDADES DE SEPARACION DE BANDA (EB) DEL SEMICONDUCTOR MAS ANCHA, DE MODO QUE LA SEPARACION DE BANDA EFECTIVA PARA LA ABSORCION (EA) ES MENOR QUE EB.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB919122197A GB9122197D0 (en) | 1991-10-18 | 1991-10-18 | A concentrator solar cell |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2102523T3 true ES2102523T3 (es) | 1997-08-01 |
Family
ID=10703196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES92921571T Expired - Lifetime ES2102523T3 (es) | 1991-10-18 | 1992-10-19 | Celula fotovoltaica que comprende un sistema de varios pozos cuanticos en la zona de empobrecimiento de la celula. |
Country Status (7)
Country | Link |
---|---|
US (1) | US5496415A (es) |
EP (1) | EP0608310B1 (es) |
AU (1) | AU668365B2 (es) |
DE (1) | DE69218613T2 (es) |
ES (1) | ES2102523T3 (es) |
GB (1) | GB9122197D0 (es) |
WO (1) | WO1993008606A1 (es) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000077829A2 (es) * | 1999-06-09 | 2000-12-21 | Universidad Politecnica De Madrid | Celula solar fotovoltaica de semiconductor de banda intermedia |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6147296A (en) | 1995-12-06 | 2000-11-14 | University Of Houston | Multi-quantum well tandem solar cell |
US5851310A (en) * | 1995-12-06 | 1998-12-22 | University Of Houston | Strained quantum well photovoltaic energy converter |
US6150604A (en) * | 1995-12-06 | 2000-11-21 | University Of Houston | Quantum well thermophotovoltaic energy converter |
GB2313474A (en) * | 1996-05-24 | 1997-11-26 | Imperial College | Thermophotovoltaic cells |
US6423984B1 (en) * | 1998-09-10 | 2002-07-23 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride compound semiconductor |
JP2002057352A (ja) * | 2000-06-02 | 2002-02-22 | Honda Motor Co Ltd | 太陽電池およびその製造方法 |
US6437233B1 (en) * | 2000-07-25 | 2002-08-20 | Trw Inc. | Solar cell having multi-quantum well layers transitioning from small to large band gaps and method of manufacture therefor |
DE10139509A1 (de) | 2000-12-08 | 2002-06-27 | Daimler Chrysler Ag | Silizium Germanium Solarzelle mit hohem Wirkungsgrad |
GB0118150D0 (en) * | 2001-07-25 | 2001-09-19 | Imperial College | Thermophotovoltaic device |
US20050247339A1 (en) * | 2004-05-10 | 2005-11-10 | Imperial College Innovations Limited | Method of operating a solar cell |
GB0519599D0 (en) * | 2005-09-26 | 2005-11-02 | Imp College Innovations Ltd | Photovoltaic cells |
US10069026B2 (en) | 2005-12-19 | 2018-09-04 | The Boeing Company | Reduced band gap absorber for solar cells |
CA2665881A1 (en) | 2006-10-12 | 2008-10-30 | C-3 International, Llc | Methods for providing prophylactic surface treatment for fluid processing systems and components thereof |
US20100006143A1 (en) * | 2007-04-26 | 2010-01-14 | Welser Roger E | Solar Cell Devices |
US8623301B1 (en) | 2008-04-09 | 2014-01-07 | C3 International, Llc | Solid oxide fuel cells, electrolyzers, and sensors, and methods of making and using the same |
GB2459651A (en) * | 2008-04-28 | 2009-11-04 | Quantasol Ltd | Concentrator photovoltaic cell |
GB2476300B (en) | 2009-12-18 | 2012-11-07 | Eastman Kodak Co | Luminescent solar concentrator |
US8895838B1 (en) * | 2010-01-08 | 2014-11-25 | Magnolia Solar, Inc. | Multijunction solar cell employing extended heterojunction and step graded antireflection structures and methods for constructing the same |
GB2483276B (en) | 2010-09-02 | 2012-10-10 | Jds Uniphase Corp | Photovoltaic junction for a solar cell |
TWI420700B (zh) | 2010-12-29 | 2013-12-21 | Au Optronics Corp | 太陽能電池 |
US10283658B2 (en) * | 2011-02-09 | 2019-05-07 | The Board Of Regents Of The University Of Oklahoma | Interband cascade devices |
US9614108B1 (en) | 2012-04-20 | 2017-04-04 | Magnolia Solar, Inc. | Optically-thin chalcogenide solar cells |
US11367800B1 (en) | 2012-04-20 | 2022-06-21 | Magnolia Solar, Inc. | Optically-thin III-V solar cells and methods for constructing the same |
US9985160B2 (en) | 2012-09-14 | 2018-05-29 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
US11495705B2 (en) | 2012-09-14 | 2022-11-08 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
US11646388B2 (en) * | 2012-09-14 | 2023-05-09 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
US10903383B2 (en) | 2012-09-14 | 2021-01-26 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
US9997659B2 (en) | 2012-09-14 | 2018-06-12 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
US9099595B2 (en) | 2012-09-14 | 2015-08-04 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4250515A (en) * | 1978-06-09 | 1981-02-10 | The United States Of America As Represented By The Secretary Of The Army | Heterojunction superlattice with potential well depth greater than half the bandgap |
US4255211A (en) * | 1979-12-31 | 1981-03-10 | Chevron Research Company | Multilayer photovoltaic solar cell with semiconductor layer at shorting junction interface |
US4688068A (en) * | 1983-07-08 | 1987-08-18 | The United States Of America As Represented By The Department Of Energy | Quantum well multijunction photovoltaic cell |
JPS62282468A (ja) * | 1986-05-30 | 1987-12-08 | Mitsubishi Electric Corp | 太陽電池 |
JPH0756896B2 (ja) * | 1988-05-06 | 1995-06-14 | 三菱電機株式会社 | 太陽電池 |
US4975567A (en) * | 1989-06-29 | 1990-12-04 | The United States Of America As Represented By The Secretary Of The Navy | Multiband photoconductive detector based on layered semiconductor quantum wells |
-
1991
- 1991-10-18 GB GB919122197A patent/GB9122197D0/en active Pending
-
1992
- 1992-10-19 ES ES92921571T patent/ES2102523T3/es not_active Expired - Lifetime
- 1992-10-19 WO PCT/GB1992/001913 patent/WO1993008606A1/en active IP Right Grant
- 1992-10-19 AU AU27905/92A patent/AU668365B2/en not_active Expired
- 1992-10-19 DE DE69218613T patent/DE69218613T2/de not_active Expired - Lifetime
- 1992-10-19 EP EP92921571A patent/EP0608310B1/en not_active Expired - Lifetime
- 1992-10-19 US US08/211,850 patent/US5496415A/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000077829A2 (es) * | 1999-06-09 | 2000-12-21 | Universidad Politecnica De Madrid | Celula solar fotovoltaica de semiconductor de banda intermedia |
ES2149137A1 (es) * | 1999-06-09 | 2001-01-01 | Univ Madrid Politecnica | Celula solar fotovoltaica de semiconductor de banda intermedia. |
WO2000077829A3 (es) * | 1999-06-09 | 2001-04-12 | Univ Madrid Politecnica | Celula solar fotovoltaica de semiconductor de banda intermedia |
Also Published As
Publication number | Publication date |
---|---|
AU2790592A (en) | 1993-05-21 |
US5496415A (en) | 1996-03-05 |
DE69218613T2 (de) | 1997-07-03 |
EP0608310A1 (en) | 1994-08-03 |
GB9122197D0 (en) | 1991-11-27 |
EP0608310B1 (en) | 1997-03-26 |
DE69218613D1 (de) | 1997-04-30 |
WO1993008606A1 (en) | 1993-04-29 |
AU668365B2 (en) | 1996-05-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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