ES2149137A1 - Celula solar fotovoltaica de semiconductor de banda intermedia. - Google Patents

Celula solar fotovoltaica de semiconductor de banda intermedia.

Info

Publication number
ES2149137A1
ES2149137A1 ES009901278A ES9901278A ES2149137A1 ES 2149137 A1 ES2149137 A1 ES 2149137A1 ES 009901278 A ES009901278 A ES 009901278A ES 9901278 A ES9901278 A ES 9901278A ES 2149137 A1 ES2149137 A1 ES 2149137A1
Authority
ES
Spain
Prior art keywords
intermediate band
band
solar cell
electron
photovoltaic solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES009901278A
Other languages
English (en)
Other versions
ES2149137B1 (es
Inventor
Lopez Antonio Luque
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universidad Politecnica de Madrid
Original Assignee
Consejo Superior de Investigaciones Cientificas CSIC
Universidad Politecnica de Madrid
Universidad Autonoma de Madrid
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consejo Superior de Investigaciones Cientificas CSIC, Universidad Politecnica de Madrid, Universidad Autonoma de Madrid filed Critical Consejo Superior de Investigaciones Cientificas CSIC
Priority to ES009901278A priority Critical patent/ES2149137B1/es
Priority to US09/762,438 priority patent/US6444897B1/en
Priority to PCT/ES2000/000209 priority patent/WO2000077829A2/es
Priority to EP00936909A priority patent/EP1130657A2/en
Publication of ES2149137A1 publication Critical patent/ES2149137A1/es
Application granted granted Critical
Publication of ES2149137B1 publication Critical patent/ES2149137B1/es
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Célula solar conteniendo un semiconductor (1) con una banda intermedia (2) medio llena de electrones situado entre dos capas de semiconductores ordinarios de tipo n (3) y de tipo p (4). Al iluminarlo se crean pares electrón-hueco, ya sea por absorción de un fotón de la energía necesaria (5) o por la absorción de dos (6,7) de energía inferior que bombean un electrón desde la banda de valencia a la banda intermedia (8) y desde ella a la banda de conducción (9). Se establece una corriente eléctrica que sale por el lado p y vuelve por el lado n. Las capas n y p evitan también que la banda intermedia esté en contacto con las conexiones metálicas externas, lo que produciría un cortocircuito. Esta célula convierte la energía solar en electricidad más eficientemente que las células convencionales y contribuye a la mejora de los dispositivos fotovoltaicos.
ES009901278A 1999-06-09 1999-06-09 Celula solar fotovoltaica de semiconductor de banda intermedia. Expired - Fee Related ES2149137B1 (es)

Priority Applications (4)

Application Number Priority Date Filing Date Title
ES009901278A ES2149137B1 (es) 1999-06-09 1999-06-09 Celula solar fotovoltaica de semiconductor de banda intermedia.
US09/762,438 US6444897B1 (en) 1999-06-09 2000-06-09 Intermediate band semiconductor photovoltaic solar cell
PCT/ES2000/000209 WO2000077829A2 (es) 1999-06-09 2000-06-09 Celula solar fotovoltaica de semiconductor de banda intermedia
EP00936909A EP1130657A2 (en) 1999-06-09 2000-06-09 Intermediate band semiconductor photovoltaic solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES009901278A ES2149137B1 (es) 1999-06-09 1999-06-09 Celula solar fotovoltaica de semiconductor de banda intermedia.

Publications (2)

Publication Number Publication Date
ES2149137A1 true ES2149137A1 (es) 2001-01-01
ES2149137B1 ES2149137B1 (es) 2001-11-16

Family

ID=8308772

Family Applications (1)

Application Number Title Priority Date Filing Date
ES009901278A Expired - Fee Related ES2149137B1 (es) 1999-06-09 1999-06-09 Celula solar fotovoltaica de semiconductor de banda intermedia.

Country Status (4)

Country Link
US (1) US6444897B1 (es)
EP (1) EP1130657A2 (es)
ES (1) ES2149137B1 (es)
WO (1) WO2000077829A2 (es)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012072839A1 (es) * 2010-12-03 2012-06-07 Universidad Complutense De Madrid Método para la fabricación de una célula solar lateral de banda intermedia
WO2021044072A1 (es) * 2019-09-06 2021-03-11 Universidad Autónoma de Madrid Dispositivo semiconductor

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3753605B2 (ja) * 2000-11-01 2006-03-08 シャープ株式会社 太陽電池およびその製造方法
DE10139509A1 (de) * 2000-12-08 2002-06-27 Daimler Chrysler Ag Silizium Germanium Solarzelle mit hohem Wirkungsgrad
US6794265B2 (en) * 2001-08-02 2004-09-21 Ultradots, Inc. Methods of forming quantum dots of Group IV semiconductor materials
US6710366B1 (en) 2001-08-02 2004-03-23 Ultradots, Inc. Nanocomposite materials with engineered properties
US6819845B2 (en) 2001-08-02 2004-11-16 Ultradots, Inc. Optical devices with engineered nonlinear nanocomposite materials
KR100940530B1 (ko) * 2003-01-17 2010-02-10 삼성전자주식회사 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치
DE10345736A1 (de) * 2003-10-01 2005-05-04 Wulf Naegel Photovoltaikelement
EP1709690A4 (en) * 2004-01-20 2009-03-11 Cyrium Technologies Inc SOLAR CELL WITH EPITAXIAL GROWTH QUANTUM DOT MATERIAL
US9018515B2 (en) 2004-01-20 2015-04-28 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
US7880255B2 (en) * 2004-07-19 2011-02-01 Micron Technology, Inc. Pixel cell having a grated interface
US7306963B2 (en) * 2004-11-30 2007-12-11 Spire Corporation Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices
US7514725B2 (en) * 2004-11-30 2009-04-07 Spire Corporation Nanophotovoltaic devices
US7790574B2 (en) 2004-12-20 2010-09-07 Georgia Tech Research Corporation Boron diffusion in silicon devices
ES2297972A1 (es) * 2005-05-30 2008-05-01 Universidad Politecnica De Madrid Fotodetector de infrarrojos de banda intermedia y puntos cuanticos.
US20070012355A1 (en) * 2005-07-12 2007-01-18 Locascio Michael Nanostructured material comprising semiconductor nanocrystal complexes for use in solar cell and method of making a solar cell comprising nanostructured material
US7750425B2 (en) * 2005-12-16 2010-07-06 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
EP1994565A4 (en) 2006-02-27 2012-06-27 Los Alamos Nat Security Llc OPTOELECTRONIC DEVICES USING MATERIALS WITH IMPROVED ELECTRONIC TRANSITIONS
WO2007131126A2 (en) * 2006-05-03 2007-11-15 Rochester Institute Of Technology Multi-junction, photovoltaic devices with nanostructured spectral enhancements and methods thereof
WO2008011152A2 (en) * 2006-07-21 2008-01-24 University Of Massachusetts Longwave infrared photodetector
US20080216894A1 (en) * 2007-01-08 2008-09-11 Plextronics, Inc. Quantum dot photovoltaic device
ES2277800B2 (es) * 2007-02-16 2009-02-16 Universidad Politecnica De Madrid Dispositivo para acoplar la luz de forma optima a una celula solar de banda intermedia realizada mediante puntos cuanticos.
US20100006143A1 (en) * 2007-04-26 2010-01-14 Welser Roger E Solar Cell Devices
DE102007043215A1 (de) * 2007-09-11 2009-03-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaische Anordnung mit optisch aktiver Glaskeramik
ES2293862B2 (es) * 2007-10-17 2009-02-16 Universidad Politecnica De Madrid Celula solar de banda intermedia de puntos cuanticos con acoplamiento optimo de la luz por difraccion.
ES2302663B2 (es) * 2008-02-28 2009-02-16 Universidad Politecnica De Madrid Procedimiento para la obtencion de peliculas de materiales semiconductores incorporando una banda intermedia.
ES2311431B2 (es) * 2008-06-06 2009-07-21 Universidad Politecnica De Madrid Procedimiento de fabricacion de dispositivos optoelectronicos de banda intermedia basados en tecnologia de lamina delgada.
US8927852B2 (en) 2008-08-21 2015-01-06 Seagate Technology Llc Photovoltaic device with an up-converting quantum dot layer and absorber
EP2166577A1 (en) * 2008-09-23 2010-03-24 Advanced Surface Technology B.V. Solar cell and method of manufacturing a solar cell
ES2324013A1 (es) * 2009-02-19 2009-07-28 Universidad Politecnica De Madrid Metodo para la fabricacion de una celula solar de silicio de banda intermedia.
US20110303281A1 (en) * 2009-02-26 2011-12-15 Tomoya Kodama Method for manufacturing thin film compound solar cell
GB0917747D0 (en) 2009-10-09 2009-11-25 Univ Glasgow Intermediate band semiconductor photovoltaic devices, uses thereof and methods for their manufacture
GB201016489D0 (en) 2010-09-30 2010-11-17 Imp Innovations Ltd Improved devices and methods for absorbing light
TWI418969B (zh) * 2010-12-01 2013-12-11 Ind Tech Res Inst 自驅動型熱電電耗偵測裝置及方法
KR101918737B1 (ko) * 2012-03-19 2019-02-08 엘지전자 주식회사 태양 전지
US8952478B2 (en) * 2013-04-24 2015-02-10 Infineon Technologies Austria Ag Radiation conversion device and method of manufacturing a radiation conversion device
US10428100B2 (en) 2017-01-13 2019-10-01 Uchicago Argonne, Llc Substituted lead halide perovskite intermediate band absorbers
PL443344A1 (pl) * 2022-12-30 2023-06-19 Politechnika Lubelska Sposób wytwarzania krzemowego ogniwa fotowoltaicznego z dodatkowym poziomem energetycznym w paśmie zabronionym

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62128182A (ja) * 1985-11-28 1987-06-10 Mitsubishi Electric Corp 太陽電池
US4688068A (en) * 1983-07-08 1987-08-18 The United States Of America As Represented By The Department Of Energy Quantum well multijunction photovoltaic cell
JPH06163962A (ja) * 1992-11-26 1994-06-10 Sumitomo Electric Ind Ltd 太陽電池
JPH06302840A (ja) * 1993-04-16 1994-10-28 Agency Of Ind Science & Technol 太陽電池
ES2102523T3 (es) * 1991-10-18 1997-08-01 Imperial College Celula fotovoltaica que comprende un sistema de varios pozos cuanticos en la zona de empobrecimiento de la celula.
JPH09237908A (ja) * 1996-02-28 1997-09-09 Oki Electric Ind Co Ltd 太陽電池
US5851310A (en) * 1995-12-06 1998-12-22 University Of Houston Strained quantum well photovoltaic energy converter

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0535293A1 (en) * 1991-01-29 1993-04-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. A method of fabricating a compositional semiconductor device
CN100350641C (zh) * 1995-11-06 2007-11-21 日亚化学工业株式会社 氮化物半导体器件

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4688068A (en) * 1983-07-08 1987-08-18 The United States Of America As Represented By The Department Of Energy Quantum well multijunction photovoltaic cell
JPS62128182A (ja) * 1985-11-28 1987-06-10 Mitsubishi Electric Corp 太陽電池
ES2102523T3 (es) * 1991-10-18 1997-08-01 Imperial College Celula fotovoltaica que comprende un sistema de varios pozos cuanticos en la zona de empobrecimiento de la celula.
JPH06163962A (ja) * 1992-11-26 1994-06-10 Sumitomo Electric Ind Ltd 太陽電池
JPH06302840A (ja) * 1993-04-16 1994-10-28 Agency Of Ind Science & Technol 太陽電池
US5851310A (en) * 1995-12-06 1998-12-22 University Of Houston Strained quantum well photovoltaic energy converter
JPH09237908A (ja) * 1996-02-28 1997-09-09 Oki Electric Ind Co Ltd 太陽電池

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012072839A1 (es) * 2010-12-03 2012-06-07 Universidad Complutense De Madrid Método para la fabricación de una célula solar lateral de banda intermedia
WO2021044072A1 (es) * 2019-09-06 2021-03-11 Universidad Autónoma de Madrid Dispositivo semiconductor

Also Published As

Publication number Publication date
EP1130657A2 (en) 2001-09-05
WO2000077829A2 (es) 2000-12-21
WO2000077829A3 (es) 2001-04-12
ES2149137B1 (es) 2001-11-16
US6444897B1 (en) 2002-09-03

Similar Documents

Publication Publication Date Title
ES2149137A1 (es) Celula solar fotovoltaica de semiconductor de banda intermedia.
EP0608310B1 (en) Concentrator solar cell having a multi-quantum well system in the depletion region of the cell
AU2001252013A1 (en) Photovoltaic cell
Licht et al. Light invariant, efficient, multiple band gap AlGaAs/Si/metal hydride solar cell
US8466582B2 (en) Method and apparatus for applying an electric field to a photovoltaic element
US5215599A (en) Advanced solar cell
CN114930542A (zh) 双面级联光伏电池和模块
US20100263713A1 (en) Four Terminal Monolithic Multijunction Solar Cell
Andreev et al. Tritium-powered betacells based on Al/sub x/Ga/sub 1-x/As
US4637969A (en) Photoelectro-chemical cell for conversion of solar energy to electricity and method of its manufacture
US4352868A (en) Double photoelectrochemical cell for conversion of solar energy to electricity
US20100263712A1 (en) Three terminal monolithic multijunction solar cell
EP3066696B1 (en) Photovoltaic cells
JP2019011502A (ja) 光電気化学デバイス
CN114762130B (zh) 直接半导体太阳能装置的改进
US20100116337A1 (en) Tandem Module Photovoltaic Devices Including An Organic Module
Baranov et al. New type of photoelectric converter based on an n-CdO/a-C/p-Si heterostructure
JPS58127385A (ja) 光電変換装置
JPS58106877A (ja) 太陽電池
RU2491681C1 (ru) Фотоэлемент
JPH0235472B2 (es)
Catchpole et al. Third generation photovoltaics
JPH0614469B2 (ja) 光レドックス反応装置
GB2341002A (en) A solar cell comprising clusters in the active region
US20120192938A1 (en) Method and apparatus involving high-efficiency photovoltaic with p-type oxidant

Legal Events

Date Code Title Description
EC2A Search report published

Date of ref document: 20001016

Kind code of ref document: A1

Effective date: 20001016

EC2A Search report published

Date of ref document: 20010101

Kind code of ref document: A1

Effective date: 20010101

PC2A Transfer of patent

Owner name: UNIVERSIDAD POLITECNICA DE MADRID

Effective date: 20130123

FD2A Announcement of lapse in spain

Effective date: 20190926