ES2149137A1 - Celula solar fotovoltaica de semiconductor de banda intermedia. - Google Patents
Celula solar fotovoltaica de semiconductor de banda intermedia.Info
- Publication number
- ES2149137A1 ES2149137A1 ES009901278A ES9901278A ES2149137A1 ES 2149137 A1 ES2149137 A1 ES 2149137A1 ES 009901278 A ES009901278 A ES 009901278A ES 9901278 A ES9901278 A ES 9901278A ES 2149137 A1 ES2149137 A1 ES 2149137A1
- Authority
- ES
- Spain
- Prior art keywords
- intermediate band
- band
- solar cell
- electron
- photovoltaic solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000005611 electricity Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Célula solar conteniendo un semiconductor (1) con una banda intermedia (2) medio llena de electrones situado entre dos capas de semiconductores ordinarios de tipo n (3) y de tipo p (4). Al iluminarlo se crean pares electrón-hueco, ya sea por absorción de un fotón de la energía necesaria (5) o por la absorción de dos (6,7) de energía inferior que bombean un electrón desde la banda de valencia a la banda intermedia (8) y desde ella a la banda de conducción (9). Se establece una corriente eléctrica que sale por el lado p y vuelve por el lado n. Las capas n y p evitan también que la banda intermedia esté en contacto con las conexiones metálicas externas, lo que produciría un cortocircuito. Esta célula convierte la energía solar en electricidad más eficientemente que las células convencionales y contribuye a la mejora de los dispositivos fotovoltaicos.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES009901278A ES2149137B1 (es) | 1999-06-09 | 1999-06-09 | Celula solar fotovoltaica de semiconductor de banda intermedia. |
US09/762,438 US6444897B1 (en) | 1999-06-09 | 2000-06-09 | Intermediate band semiconductor photovoltaic solar cell |
PCT/ES2000/000209 WO2000077829A2 (es) | 1999-06-09 | 2000-06-09 | Celula solar fotovoltaica de semiconductor de banda intermedia |
EP00936909A EP1130657A2 (en) | 1999-06-09 | 2000-06-09 | Intermediate band semiconductor photovoltaic solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES009901278A ES2149137B1 (es) | 1999-06-09 | 1999-06-09 | Celula solar fotovoltaica de semiconductor de banda intermedia. |
Publications (2)
Publication Number | Publication Date |
---|---|
ES2149137A1 true ES2149137A1 (es) | 2001-01-01 |
ES2149137B1 ES2149137B1 (es) | 2001-11-16 |
Family
ID=8308772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES009901278A Expired - Fee Related ES2149137B1 (es) | 1999-06-09 | 1999-06-09 | Celula solar fotovoltaica de semiconductor de banda intermedia. |
Country Status (4)
Country | Link |
---|---|
US (1) | US6444897B1 (es) |
EP (1) | EP1130657A2 (es) |
ES (1) | ES2149137B1 (es) |
WO (1) | WO2000077829A2 (es) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012072839A1 (es) * | 2010-12-03 | 2012-06-07 | Universidad Complutense De Madrid | Método para la fabricación de una célula solar lateral de banda intermedia |
WO2021044072A1 (es) * | 2019-09-06 | 2021-03-11 | Universidad Autónoma de Madrid | Dispositivo semiconductor |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3753605B2 (ja) * | 2000-11-01 | 2006-03-08 | シャープ株式会社 | 太陽電池およびその製造方法 |
DE10139509A1 (de) * | 2000-12-08 | 2002-06-27 | Daimler Chrysler Ag | Silizium Germanium Solarzelle mit hohem Wirkungsgrad |
US6794265B2 (en) * | 2001-08-02 | 2004-09-21 | Ultradots, Inc. | Methods of forming quantum dots of Group IV semiconductor materials |
US6710366B1 (en) | 2001-08-02 | 2004-03-23 | Ultradots, Inc. | Nanocomposite materials with engineered properties |
US6819845B2 (en) | 2001-08-02 | 2004-11-16 | Ultradots, Inc. | Optical devices with engineered nonlinear nanocomposite materials |
KR100940530B1 (ko) * | 2003-01-17 | 2010-02-10 | 삼성전자주식회사 | 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치 |
DE10345736A1 (de) * | 2003-10-01 | 2005-05-04 | Wulf Naegel | Photovoltaikelement |
EP1709690A4 (en) * | 2004-01-20 | 2009-03-11 | Cyrium Technologies Inc | SOLAR CELL WITH EPITAXIAL GROWTH QUANTUM DOT MATERIAL |
US9018515B2 (en) | 2004-01-20 | 2015-04-28 | Cyrium Technologies Incorporated | Solar cell with epitaxially grown quantum dot material |
US7880255B2 (en) * | 2004-07-19 | 2011-02-01 | Micron Technology, Inc. | Pixel cell having a grated interface |
US7306963B2 (en) * | 2004-11-30 | 2007-12-11 | Spire Corporation | Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices |
US7514725B2 (en) * | 2004-11-30 | 2009-04-07 | Spire Corporation | Nanophotovoltaic devices |
US7790574B2 (en) | 2004-12-20 | 2010-09-07 | Georgia Tech Research Corporation | Boron diffusion in silicon devices |
ES2297972A1 (es) * | 2005-05-30 | 2008-05-01 | Universidad Politecnica De Madrid | Fotodetector de infrarrojos de banda intermedia y puntos cuanticos. |
US20070012355A1 (en) * | 2005-07-12 | 2007-01-18 | Locascio Michael | Nanostructured material comprising semiconductor nanocrystal complexes for use in solar cell and method of making a solar cell comprising nanostructured material |
US7750425B2 (en) * | 2005-12-16 | 2010-07-06 | The Trustees Of Princeton University | Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier |
EP1994565A4 (en) | 2006-02-27 | 2012-06-27 | Los Alamos Nat Security Llc | OPTOELECTRONIC DEVICES USING MATERIALS WITH IMPROVED ELECTRONIC TRANSITIONS |
WO2007131126A2 (en) * | 2006-05-03 | 2007-11-15 | Rochester Institute Of Technology | Multi-junction, photovoltaic devices with nanostructured spectral enhancements and methods thereof |
WO2008011152A2 (en) * | 2006-07-21 | 2008-01-24 | University Of Massachusetts | Longwave infrared photodetector |
US20080216894A1 (en) * | 2007-01-08 | 2008-09-11 | Plextronics, Inc. | Quantum dot photovoltaic device |
ES2277800B2 (es) * | 2007-02-16 | 2009-02-16 | Universidad Politecnica De Madrid | Dispositivo para acoplar la luz de forma optima a una celula solar de banda intermedia realizada mediante puntos cuanticos. |
US20100006143A1 (en) * | 2007-04-26 | 2010-01-14 | Welser Roger E | Solar Cell Devices |
DE102007043215A1 (de) * | 2007-09-11 | 2009-03-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photovoltaische Anordnung mit optisch aktiver Glaskeramik |
ES2293862B2 (es) * | 2007-10-17 | 2009-02-16 | Universidad Politecnica De Madrid | Celula solar de banda intermedia de puntos cuanticos con acoplamiento optimo de la luz por difraccion. |
ES2302663B2 (es) * | 2008-02-28 | 2009-02-16 | Universidad Politecnica De Madrid | Procedimiento para la obtencion de peliculas de materiales semiconductores incorporando una banda intermedia. |
ES2311431B2 (es) * | 2008-06-06 | 2009-07-21 | Universidad Politecnica De Madrid | Procedimiento de fabricacion de dispositivos optoelectronicos de banda intermedia basados en tecnologia de lamina delgada. |
US8927852B2 (en) | 2008-08-21 | 2015-01-06 | Seagate Technology Llc | Photovoltaic device with an up-converting quantum dot layer and absorber |
EP2166577A1 (en) * | 2008-09-23 | 2010-03-24 | Advanced Surface Technology B.V. | Solar cell and method of manufacturing a solar cell |
ES2324013A1 (es) * | 2009-02-19 | 2009-07-28 | Universidad Politecnica De Madrid | Metodo para la fabricacion de una celula solar de silicio de banda intermedia. |
US20110303281A1 (en) * | 2009-02-26 | 2011-12-15 | Tomoya Kodama | Method for manufacturing thin film compound solar cell |
GB0917747D0 (en) | 2009-10-09 | 2009-11-25 | Univ Glasgow | Intermediate band semiconductor photovoltaic devices, uses thereof and methods for their manufacture |
GB201016489D0 (en) | 2010-09-30 | 2010-11-17 | Imp Innovations Ltd | Improved devices and methods for absorbing light |
TWI418969B (zh) * | 2010-12-01 | 2013-12-11 | Ind Tech Res Inst | 自驅動型熱電電耗偵測裝置及方法 |
KR101918737B1 (ko) * | 2012-03-19 | 2019-02-08 | 엘지전자 주식회사 | 태양 전지 |
US8952478B2 (en) * | 2013-04-24 | 2015-02-10 | Infineon Technologies Austria Ag | Radiation conversion device and method of manufacturing a radiation conversion device |
US10428100B2 (en) | 2017-01-13 | 2019-10-01 | Uchicago Argonne, Llc | Substituted lead halide perovskite intermediate band absorbers |
PL443344A1 (pl) * | 2022-12-30 | 2023-06-19 | Politechnika Lubelska | Sposób wytwarzania krzemowego ogniwa fotowoltaicznego z dodatkowym poziomem energetycznym w paśmie zabronionym |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62128182A (ja) * | 1985-11-28 | 1987-06-10 | Mitsubishi Electric Corp | 太陽電池 |
US4688068A (en) * | 1983-07-08 | 1987-08-18 | The United States Of America As Represented By The Department Of Energy | Quantum well multijunction photovoltaic cell |
JPH06163962A (ja) * | 1992-11-26 | 1994-06-10 | Sumitomo Electric Ind Ltd | 太陽電池 |
JPH06302840A (ja) * | 1993-04-16 | 1994-10-28 | Agency Of Ind Science & Technol | 太陽電池 |
ES2102523T3 (es) * | 1991-10-18 | 1997-08-01 | Imperial College | Celula fotovoltaica que comprende un sistema de varios pozos cuanticos en la zona de empobrecimiento de la celula. |
JPH09237908A (ja) * | 1996-02-28 | 1997-09-09 | Oki Electric Ind Co Ltd | 太陽電池 |
US5851310A (en) * | 1995-12-06 | 1998-12-22 | University Of Houston | Strained quantum well photovoltaic energy converter |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0535293A1 (en) * | 1991-01-29 | 1993-04-07 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | A method of fabricating a compositional semiconductor device |
CN100350641C (zh) * | 1995-11-06 | 2007-11-21 | 日亚化学工业株式会社 | 氮化物半导体器件 |
-
1999
- 1999-06-09 ES ES009901278A patent/ES2149137B1/es not_active Expired - Fee Related
-
2000
- 2000-06-09 EP EP00936909A patent/EP1130657A2/en not_active Ceased
- 2000-06-09 WO PCT/ES2000/000209 patent/WO2000077829A2/es active Application Filing
- 2000-06-09 US US09/762,438 patent/US6444897B1/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4688068A (en) * | 1983-07-08 | 1987-08-18 | The United States Of America As Represented By The Department Of Energy | Quantum well multijunction photovoltaic cell |
JPS62128182A (ja) * | 1985-11-28 | 1987-06-10 | Mitsubishi Electric Corp | 太陽電池 |
ES2102523T3 (es) * | 1991-10-18 | 1997-08-01 | Imperial College | Celula fotovoltaica que comprende un sistema de varios pozos cuanticos en la zona de empobrecimiento de la celula. |
JPH06163962A (ja) * | 1992-11-26 | 1994-06-10 | Sumitomo Electric Ind Ltd | 太陽電池 |
JPH06302840A (ja) * | 1993-04-16 | 1994-10-28 | Agency Of Ind Science & Technol | 太陽電池 |
US5851310A (en) * | 1995-12-06 | 1998-12-22 | University Of Houston | Strained quantum well photovoltaic energy converter |
JPH09237908A (ja) * | 1996-02-28 | 1997-09-09 | Oki Electric Ind Co Ltd | 太陽電池 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012072839A1 (es) * | 2010-12-03 | 2012-06-07 | Universidad Complutense De Madrid | Método para la fabricación de una célula solar lateral de banda intermedia |
WO2021044072A1 (es) * | 2019-09-06 | 2021-03-11 | Universidad Autónoma de Madrid | Dispositivo semiconductor |
Also Published As
Publication number | Publication date |
---|---|
EP1130657A2 (en) | 2001-09-05 |
WO2000077829A2 (es) | 2000-12-21 |
WO2000077829A3 (es) | 2001-04-12 |
ES2149137B1 (es) | 2001-11-16 |
US6444897B1 (en) | 2002-09-03 |
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Legal Events
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PC2A | Transfer of patent |
Owner name: UNIVERSIDAD POLITECNICA DE MADRID Effective date: 20130123 |
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FD2A | Announcement of lapse in spain |
Effective date: 20190926 |