FR2679070B1 - Dispositif semiconducteur du type attaque par la tension en particulier mofset, ainsi que son procede de fabrication. - Google Patents

Dispositif semiconducteur du type attaque par la tension en particulier mofset, ainsi que son procede de fabrication.

Info

Publication number
FR2679070B1
FR2679070B1 FR9208634A FR9208634A FR2679070B1 FR 2679070 B1 FR2679070 B1 FR 2679070B1 FR 9208634 A FR9208634 A FR 9208634A FR 9208634 A FR9208634 A FR 9208634A FR 2679070 B1 FR2679070 B1 FR 2679070B1
Authority
FR
France
Prior art keywords
mofset
voltage
manufacturing
well
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9208634A
Other languages
English (en)
Other versions
FR2679070A1 (fr
Inventor
Yoshida Shigekazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2679070A1 publication Critical patent/FR2679070A1/fr
Application granted granted Critical
Publication of FR2679070B1 publication Critical patent/FR2679070B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR9208634A 1991-07-11 1992-07-10 Dispositif semiconducteur du type attaque par la tension en particulier mofset, ainsi que son procede de fabrication. Expired - Fee Related FR2679070B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3170873A JPH0521704A (ja) 1991-07-11 1991-07-11 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
FR2679070A1 FR2679070A1 (fr) 1993-01-15
FR2679070B1 true FR2679070B1 (fr) 1994-06-10

Family

ID=15912900

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9208634A Expired - Fee Related FR2679070B1 (fr) 1991-07-11 1992-07-10 Dispositif semiconducteur du type attaque par la tension en particulier mofset, ainsi que son procede de fabrication.

Country Status (3)

Country Link
JP (1) JPH0521704A (fr)
DE (1) DE4222785C2 (fr)
FR (1) FR2679070B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2719157B1 (fr) * 1994-04-20 1996-08-09 Rv Electronique Dispositif de puissance à semiconducteur à double isolation.
DE19725836C2 (de) 1997-06-18 2001-10-04 Infineon Technologies Ag Leistungshalbleiter-Anordnung auf DCB-Substrat
JP4601874B2 (ja) * 2001-07-30 2010-12-22 三菱電機株式会社 半導体装置
DE10200372A1 (de) * 2002-01-08 2003-07-24 Siemens Ag Leistungshalbleitermodul

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3241508A1 (de) * 1982-11-10 1984-05-10 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungstransistor-modul
JPS60154552A (ja) * 1984-01-23 1985-08-14 Mitsubishi Electric Corp 電力用半導体装置
CH668667A5 (de) * 1985-11-15 1989-01-13 Bbc Brown Boveri & Cie Leistungshalbleitermodul.
JPS6393126A (ja) * 1986-10-08 1988-04-23 Fuji Electric Co Ltd 半導体装置

Also Published As

Publication number Publication date
DE4222785A1 (de) 1993-01-21
JPH0521704A (ja) 1993-01-29
DE4222785C2 (de) 1997-01-30
FR2679070A1 (fr) 1993-01-15

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