DE69203418D1 - Halbleiter-Vorrichtung und Methode zu deren Herstellung. - Google Patents

Halbleiter-Vorrichtung und Methode zu deren Herstellung.

Info

Publication number
DE69203418D1
DE69203418D1 DE69203418T DE69203418T DE69203418D1 DE 69203418 D1 DE69203418 D1 DE 69203418D1 DE 69203418 T DE69203418 T DE 69203418T DE 69203418 T DE69203418 T DE 69203418T DE 69203418 D1 DE69203418 D1 DE 69203418D1
Authority
DE
Germany
Prior art keywords
manufacture
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69203418T
Other languages
English (en)
Other versions
DE69203418T2 (de
Inventor
Yuji Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69203418D1 publication Critical patent/DE69203418D1/de
Publication of DE69203418T2 publication Critical patent/DE69203418T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69203418T 1991-09-20 1992-09-18 Halbleiter-Vorrichtung und Methode zu deren Herstellung. Expired - Fee Related DE69203418T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3241169A JP2982422B2 (ja) 1991-09-20 1991-09-20 半導体レーザおよびその製造方法

Publications (2)

Publication Number Publication Date
DE69203418D1 true DE69203418D1 (de) 1995-08-17
DE69203418T2 DE69203418T2 (de) 1996-01-11

Family

ID=17070275

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69203418T Expired - Fee Related DE69203418T2 (de) 1991-09-20 1992-09-18 Halbleiter-Vorrichtung und Methode zu deren Herstellung.

Country Status (4)

Country Link
US (1) US5274660A (de)
EP (1) EP0533485B1 (de)
JP (1) JP2982422B2 (de)
DE (1) DE69203418T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5208824A (en) * 1991-12-12 1993-05-04 At&T Bell Laboratories Article comprising a DFB semiconductor laser
US5418182A (en) * 1993-03-26 1995-05-23 Honeywell Inc. Method of fabricating diode lasers using ion beam deposition
DE4334525A1 (de) * 1993-10-09 1995-04-13 Deutsche Bundespost Telekom Optoelektronisches Bauelement mit verteilter Rückkopplung und variierbarem Kopplungskoeffizienten
FR2713350B1 (fr) * 1993-12-06 1995-12-29 Franck Delorme Composant optique à pluralité de réseaux de bragg et procédé de fabrication de ce composant.
US6194240B1 (en) * 1993-12-21 2001-02-27 Lucent Technologies Inc. Method for fabrication of wavelength selective electro-optic grating for DFB/DBR lasers
JPH07221392A (ja) * 1994-02-08 1995-08-18 Mitsubishi Electric Corp 量子細線の作製方法、量子細線、量子細線レーザ、及び量子細線レーザの作製方法、回折格子の作製方法、及び分布帰還型半導体レーザ
US6151351A (en) * 1994-09-28 2000-11-21 Matsushita Electric Industrial Co., Ltd. Distributed feedback semiconductor laser and method for producing the same
JPH08255954A (ja) * 1995-03-17 1996-10-01 Mitsubishi Electric Corp 半導体レーザの構造及びその製造方法
FR2743192B1 (fr) * 1995-12-28 1998-02-06 Alcatel Optronics Procede pour integrer un reseau de bragg localise dans un semi-conducteur
EP0782226A1 (de) * 1995-12-28 1997-07-02 Lucent Technologies Inc. Herstellungsverfahren für einen Halbleiterlaser mit Verteilter Rüchkopplung und entlang des Resonators varierender Gitterkopplung
JP4097950B2 (ja) * 2002-02-12 2008-06-11 三菱電機株式会社 分布帰還型レーザ装置、半導体光装置および分布帰還型レーザ装置の製造方法
US6638773B1 (en) * 2002-05-31 2003-10-28 Applied Optoelectronics, Inc. Method for fabricating single-mode DBR laser with improved yield
US7065123B2 (en) * 2002-06-27 2006-06-20 Anritsu Corporation Distributed feedback semiconductor laser for outputting beam of single wavelength
DE102008054217A1 (de) * 2008-10-31 2010-05-06 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
JP6588859B2 (ja) * 2016-05-13 2019-10-09 日本電信電話株式会社 半導体レーザ
JP6588858B2 (ja) * 2016-05-13 2019-10-09 日本電信電話株式会社 半導体レーザ
US10916915B2 (en) * 2018-12-21 2021-02-09 National Sun Yat-Sen University Distributed feedback semiconductor laser device
US20220302678A1 (en) * 2021-03-17 2022-09-22 Macom Technology Solutions Holdings, Inc. Semiconductor lasers

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5946083A (ja) * 1982-09-09 1984-03-15 Nippon Telegr & Teleph Corp <Ntt> 周期構造を有する半導体レ−ザの製法
JPS59119887A (ja) * 1982-12-27 1984-07-11 Fujitsu Ltd 半導体レ−ザ
JPS6284583A (ja) * 1985-10-08 1987-04-18 Nec Corp 分布帰還型半導体レ−ザ
JP2656248B2 (ja) * 1987-02-27 1997-09-24 三菱電機株式会社 半導体レーザ
JP2768940B2 (ja) * 1987-07-08 1998-06-25 三菱電機株式会社 単一波長発振半導体レーザ装置
JP2768672B2 (ja) * 1987-09-30 1998-06-25 株式会社日立製作所 面発光半導体レーザ
JPH0271573A (ja) * 1988-09-06 1990-03-12 Canon Inc 分布帰還型半導体アレーレーザ
GB8907304D0 (en) * 1989-03-31 1989-05-17 British Telecomm Distributed feedback lasers
JPH02298091A (ja) * 1989-05-12 1990-12-10 Mitsubishi Electric Corp 半導体レーザ装置
JP2619057B2 (ja) * 1989-05-22 1997-06-11 三菱電機株式会社 半導体レーザの製造方法
JPH03110885A (ja) * 1989-09-26 1991-05-10 Nippon Telegr & Teleph Corp <Ntt> 分布帰還型半導体レーザー
US5023198A (en) * 1990-02-28 1991-06-11 At&T Bell Laboratories Method for fabricating self-stabilized semiconductor gratings

Also Published As

Publication number Publication date
DE69203418T2 (de) 1996-01-11
EP0533485B1 (de) 1995-07-12
JP2982422B2 (ja) 1999-11-22
US5274660A (en) 1993-12-28
EP0533485A1 (de) 1993-03-24
JPH0582889A (ja) 1993-04-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee