FR2816330B1 - Monocristaux, procede de fabrication de monocristaux par croissance en solution et applications - Google Patents

Monocristaux, procede de fabrication de monocristaux par croissance en solution et applications

Info

Publication number
FR2816330B1
FR2816330B1 FR0014423A FR0014423A FR2816330B1 FR 2816330 B1 FR2816330 B1 FR 2816330B1 FR 0014423 A FR0014423 A FR 0014423A FR 0014423 A FR0014423 A FR 0014423A FR 2816330 B1 FR2816330 B1 FR 2816330B1
Authority
FR
France
Prior art keywords
single crystals
applications
manufacturing
growing solution
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0014423A
Other languages
English (en)
Other versions
FR2816330A1 (fr
Inventor
Vitali Tatartchenko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Luxium Solutions SAS
Original Assignee
Saint Gobain Cristaux and Detecteurs SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0014423A priority Critical patent/FR2816330B1/fr
Application filed by Saint Gobain Cristaux and Detecteurs SAS filed Critical Saint Gobain Cristaux and Detecteurs SAS
Priority to CNB018186386A priority patent/CN1318653C/zh
Priority to AU2002223766A priority patent/AU2002223766A1/en
Priority to RU2003117008/15A priority patent/RU2280719C2/ru
Priority to US10/415,351 priority patent/US6929693B2/en
Priority to CN2006101216460A priority patent/CN1924114B/zh
Priority to PCT/FR2001/003442 priority patent/WO2002038836A1/fr
Publication of FR2816330A1 publication Critical patent/FR2816330A1/fr
Application granted granted Critical
Publication of FR2816330B1 publication Critical patent/FR2816330B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/14—Phosphates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
FR0014423A 2000-11-09 2000-11-09 Monocristaux, procede de fabrication de monocristaux par croissance en solution et applications Expired - Fee Related FR2816330B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0014423A FR2816330B1 (fr) 2000-11-09 2000-11-09 Monocristaux, procede de fabrication de monocristaux par croissance en solution et applications
AU2002223766A AU2002223766A1 (en) 2000-11-09 2001-11-07 Single crystals, method for making single crystals by growth in solution and uses
RU2003117008/15A RU2280719C2 (ru) 2000-11-09 2001-11-07 Монокристаллы, способ получения монокристаллов путем выращивания в растворе и варианты применения
US10/415,351 US6929693B2 (en) 2000-11-09 2001-11-07 Single crystals, method for making single crystals by growth in solution and uses
CNB018186386A CN1318653C (zh) 2000-11-09 2001-11-07 溶液中生长单晶的制造方法
CN2006101216460A CN1924114B (zh) 2000-11-09 2001-11-07 单晶及其应用
PCT/FR2001/003442 WO2002038836A1 (fr) 2000-11-09 2001-11-07 Monocristaux, procede de fabrication de monocristaux par croissance en solution et applications

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0014423A FR2816330B1 (fr) 2000-11-09 2000-11-09 Monocristaux, procede de fabrication de monocristaux par croissance en solution et applications

Publications (2)

Publication Number Publication Date
FR2816330A1 FR2816330A1 (fr) 2002-05-10
FR2816330B1 true FR2816330B1 (fr) 2003-06-20

Family

ID=8856266

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0014423A Expired - Fee Related FR2816330B1 (fr) 2000-11-09 2000-11-09 Monocristaux, procede de fabrication de monocristaux par croissance en solution et applications

Country Status (6)

Country Link
US (1) US6929693B2 (fr)
CN (2) CN1924114B (fr)
AU (1) AU2002223766A1 (fr)
FR (1) FR2816330B1 (fr)
RU (1) RU2280719C2 (fr)
WO (1) WO2002038836A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7996901B2 (en) * 2006-03-31 2011-08-09 Lenovo (Singapore) Pte. Ltd. Hypervisor area for email virus testing
CN105256377B (zh) * 2015-11-10 2017-10-20 中国科学院上海光学精密机械研究所 Kdp类晶体生长的载晶架
CN107805844B (zh) * 2017-10-21 2020-10-16 中国科学院上海光学精密机械研究所 Kdp类晶体长籽晶限制生长方法
FR3087451B1 (fr) * 2018-10-17 2020-11-06 Commissariat Energie Atomique Procede de fabrication d'un monocristal par croissance en solution permettant un piegeage de cristaux parasites
CN109283769A (zh) * 2018-11-26 2019-01-29 山东大学 一种宽带倍频晶体器件
CN110055579B (zh) * 2019-04-10 2021-03-02 中国科学院上海光学精密机械研究所 Kdp类晶体长籽晶单锥生长方法
CN111876827B (zh) * 2020-07-21 2022-06-07 山东大学 一种磷酸二氢钾类单晶光纤及其生长方法与应用
CN113089074B (zh) * 2021-03-30 2023-01-20 中国科学院上海光学精密机械研究所 Dkdp晶体长籽晶二维运动生长方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4517048A (en) * 1983-10-31 1985-05-14 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for minimizing convection during crystal growth from solution
JPS61191588A (ja) * 1985-02-16 1986-08-26 Univ Osaka 電気透析法を用いた水溶性イオン結晶の育成法
AT398255B (de) * 1992-09-04 1994-11-25 Avl Verbrennungskraft Messtech Hydrothermalzuchtverfahren zum züchten von grossen kristallen oder kristallschichten aus einem metallorthophosphat unter verwendung einer keimplatte
CN2289806Y (zh) * 1996-03-13 1998-09-02 中国科学院福建物质结构研究所 磷酸二氢钾大单晶生长用的载晶架及其籽晶
FR2764909B1 (fr) * 1997-06-24 1999-07-16 Commissariat Energie Atomique Fabrication de monocristaux en forme de plaques par croissance en solution
US5904772A (en) * 1997-08-18 1999-05-18 The Regents Of The University Of California Device for isolation of seed crystals during processing of solution
CN2326617Y (zh) * 1997-10-28 1999-06-30 中国科学院福建物质结构研究所 用于快速生长大截面磷酸二氢钾晶体的载晶架

Also Published As

Publication number Publication date
CN1924114A (zh) 2007-03-07
CN1473211A (zh) 2004-02-04
RU2280719C2 (ru) 2006-07-27
AU2002223766A1 (en) 2002-05-21
US6929693B2 (en) 2005-08-16
CN1318653C (zh) 2007-05-30
CN1924114B (zh) 2010-05-12
US20040011278A1 (en) 2004-01-22
FR2816330A1 (fr) 2002-05-10
WO2002038836A1 (fr) 2002-05-16

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ST Notification of lapse

Effective date: 20160729