Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric CorpfiledCriticalMitsubishi Electric Corp
Priority to JP4900776ApriorityCriticalpatent/JPS52131472A/en
Publication of JPS52131472ApublicationCriticalpatent/JPS52131472A/en
PURPOSE: To shorten the manufacturing process of the semiconductor device by using Au layer, which was used for the diffusion source to control the life time of the semiconductor substate, for the mask for the succeeding mesa etching process.
COPYRIGHT: (C)1977,JPO&Japio
JP4900776A1976-04-271976-04-27Manufacture of semiconductor device
PendingJPS52131472A
(en)