JPS57197888A - Method of forming protective film for end surface of semiconductor laser - Google Patents
Method of forming protective film for end surface of semiconductor laserInfo
- Publication number
- JPS57197888A JPS57197888A JP8330781A JP8330781A JPS57197888A JP S57197888 A JPS57197888 A JP S57197888A JP 8330781 A JP8330781 A JP 8330781A JP 8330781 A JP8330781 A JP 8330781A JP S57197888 A JPS57197888 A JP S57197888A
- Authority
- JP
- Japan
- Prior art keywords
- end surface
- semiconductor laser
- protective film
- forming protective
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Drying Of Semiconductors (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To prevent oxidation of the end surface by a method wherein the light emitting end surface of a semiconductor laser element is etched to be clean through the soft chemical processing, and then a protective film is coated thereon. CONSTITUTION:Ionized Ar<+> gas is made to impinge against a light emitting end surface F of a semiconductor laser element 10, so that the surface F is etched to be clean. Then, an Al2O3 film is coated on the end surface F. Thus coated Al2O3 film functions to prevent oxidation of the surface F.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8330781A JPS57197888A (en) | 1981-05-29 | 1981-05-29 | Method of forming protective film for end surface of semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8330781A JPS57197888A (en) | 1981-05-29 | 1981-05-29 | Method of forming protective film for end surface of semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57197888A true JPS57197888A (en) | 1982-12-04 |
Family
ID=13798754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8330781A Pending JPS57197888A (en) | 1981-05-29 | 1981-05-29 | Method of forming protective film for end surface of semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57197888A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01205588A (en) * | 1988-02-12 | 1989-08-17 | Mitsubishi Electric Corp | Semiconductor laser device for laser printer |
-
1981
- 1981-05-29 JP JP8330781A patent/JPS57197888A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01205588A (en) * | 1988-02-12 | 1989-08-17 | Mitsubishi Electric Corp | Semiconductor laser device for laser printer |
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