AT517254B1 - Verfahren zur Handhabung aufeinander ausgerichteter Waferpaare - Google Patents

Verfahren zur Handhabung aufeinander ausgerichteter Waferpaare Download PDF

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Publication number
AT517254B1
AT517254B1 ATA50442/2016A AT504422016A AT517254B1 AT 517254 B1 AT517254 B1 AT 517254B1 AT 504422016 A AT504422016 A AT 504422016A AT 517254 B1 AT517254 B1 AT 517254B1
Authority
AT
Austria
Prior art keywords
wafers
end effector
bonder
bonding
movable
Prior art date
Application number
ATA50442/2016A
Other languages
German (de)
English (en)
Other versions
AT517254A3 (de
AT517254A2 (de
Original Assignee
Suss Microtec Lithography Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suss Microtec Lithography Gmbh filed Critical Suss Microtec Lithography Gmbh
Publication of AT517254A2 publication Critical patent/AT517254A2/de
Publication of AT517254A3 publication Critical patent/AT517254A3/de
Application granted granted Critical
Publication of AT517254B1 publication Critical patent/AT517254B1/de

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H01L2224/75302—Shape
    • H01L2224/7531—Shape of other parts
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    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H01L2224/75312—Material
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    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7565—Means for transporting the components to be connected
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    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75701—Means for aligning in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75702—Means for aligning in the upper part of the bonding apparatus, e.g. in the bonding head
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    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75703—Mechanical holding means
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    • H01L2224/757—Means for aligning
    • H01L2224/75743—Suction holding means
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    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/802—Applying energy for connecting
    • H01L2224/80201—Compression bonding
    • H01L2224/80203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
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    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/80905—Combinations of bonding methods provided for in at least two different groups from H01L2224/808 - H01L2224/80904
    • H01L2224/80907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
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    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L24/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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US20160336208A1 (en) 2016-11-17
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TW201712789A (zh) 2017-04-01
AT517254A3 (de) 2018-09-15
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AT517254A2 (de) 2016-12-15
CN106158706A (zh) 2016-11-23
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AT517258A3 (de) 2018-09-15
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US20210013079A1 (en) 2021-01-14
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US11651983B2 (en) 2023-05-16
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