ZA837086B - Method of making amorphous semiconductor alloys and devices using microwave energy - Google Patents
Method of making amorphous semiconductor alloys and devices using microwave energyInfo
- Publication number
- ZA837086B ZA837086B ZA837086A ZA837086A ZA837086B ZA 837086 B ZA837086 B ZA 837086B ZA 837086 A ZA837086 A ZA 837086A ZA 837086 A ZA837086 A ZA 837086A ZA 837086 B ZA837086 B ZA 837086B
- Authority
- ZA
- South Africa
- Prior art keywords
- sub
- microwave energy
- amorphous semiconductor
- reaction gases
- added
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000000956 alloy Substances 0.000 title abstract 4
- 229910045601 alloy Inorganic materials 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000006243 chemical reaction Methods 0.000 abstract 6
- 239000007789 gas Substances 0.000 abstract 5
- 230000008021 deposition Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 229910000078 germane Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 abstract 1
- PPMWWXLUCOODDK-UHFFFAOYSA-N tetrafluorogermane Chemical compound F[Ge](F)(F)F PPMWWXLUCOODDK-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32266—Means for controlling power transmitted to the plasma
- H01J37/32275—Microwave reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Carbon And Carbon Compounds (AREA)
- Laminated Bodies (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/423,424 US4517223A (en) | 1982-09-24 | 1982-09-24 | Method of making amorphous semiconductor alloys and devices using microwave energy |
Publications (1)
Publication Number | Publication Date |
---|---|
ZA837086B true ZA837086B (en) | 1984-05-30 |
Family
ID=23678863
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ZA837086A ZA837086B (en) | 1982-09-24 | 1983-09-23 | Method of making amorphous semiconductor alloys and devices using microwave energy |
Country Status (16)
Country | Link |
---|---|
US (1) | US4517223A (ja) |
EP (2) | EP0104907B1 (ja) |
JP (2) | JPS5978528A (ja) |
KR (1) | KR910005370B1 (ja) |
AT (1) | ATE27186T1 (ja) |
AU (1) | AU560168B2 (ja) |
BR (1) | BR8305222A (ja) |
CA (1) | CA1219240A (ja) |
DE (1) | DE3371543D1 (ja) |
EG (1) | EG15981A (ja) |
ES (2) | ES525911A0 (ja) |
IE (1) | IE54688B1 (ja) |
IL (1) | IL69773A (ja) |
IN (1) | IN161892B (ja) |
PH (1) | PH20277A (ja) |
ZA (1) | ZA837086B (ja) |
Families Citing this family (79)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4504518A (en) * | 1982-09-24 | 1985-03-12 | Energy Conversion Devices, Inc. | Method of making amorphous semiconductor alloys and devices using microwave energy |
DE3429899A1 (de) * | 1983-08-16 | 1985-03-07 | Canon K.K., Tokio/Tokyo | Verfahren zur bildung eines abscheidungsfilms |
DE3330910A1 (de) * | 1983-08-27 | 1985-03-07 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zum herstellen eines reaktionsgefaesses fuer kristallzuchtzwecke |
US4619729A (en) | 1984-02-14 | 1986-10-28 | Energy Conversion Devices, Inc. | Microwave method of making semiconductor members |
EP0160202A3 (en) * | 1984-04-30 | 1988-09-21 | Ovonic Synthetic Materials Company, Inc. | Microwave plasma deposition of coatings and the microwave plasma applied coatings applied thereby |
US4678679A (en) * | 1984-06-25 | 1987-07-07 | Energy Conversion Devices, Inc. | Continuous deposition of activated process gases |
US4568614A (en) * | 1984-06-27 | 1986-02-04 | Energy Conversion Devices, Inc. | Steel article having a disordered silicon oxide coating thereon and method of preparing the coating |
US4663183A (en) * | 1984-09-10 | 1987-05-05 | Energy Conversion Devices, Inc. | Glow discharge method of applying a carbon coating onto a substrate |
US4759947A (en) * | 1984-10-08 | 1988-07-26 | Canon Kabushiki Kaisha | Method for forming deposition film using Si compound and active species from carbon and halogen compound |
US5476694A (en) * | 1984-10-24 | 1995-12-19 | Canon Kabushiki Kaisha | Method for forming deposited film by separately introducing an active species and a silicon compound into a film-forming chamber |
US4566403A (en) * | 1985-01-30 | 1986-01-28 | Sovonics Solar Systems | Apparatus for microwave glow discharge deposition |
US4726963A (en) * | 1985-02-19 | 1988-02-23 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4784874A (en) * | 1985-02-20 | 1988-11-15 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4778692A (en) * | 1985-02-20 | 1988-10-18 | Canon Kabushiki Kaisha | Process for forming deposited film |
US5244698A (en) * | 1985-02-21 | 1993-09-14 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4818563A (en) * | 1985-02-21 | 1989-04-04 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4853251A (en) * | 1985-02-22 | 1989-08-01 | Canon Kabushiki Kaisha | Process for forming deposited film including carbon as a constituent element |
US4801468A (en) * | 1985-02-25 | 1989-01-31 | Canon Kabushiki Kaisha | Process for forming deposited film |
JP2537175B2 (ja) * | 1985-03-27 | 1996-09-25 | キヤノン株式会社 | 機能性堆積膜の製造装置 |
US4637895A (en) * | 1985-04-01 | 1987-01-20 | Energy Conversion Devices, Inc. | Gas mixtures for the vapor deposition of semiconductor material |
DE3514094A1 (de) * | 1985-04-16 | 1986-10-23 | Schering AG, Berlin und Bergkamen, 1000 Berlin | Herstellung metallischer strukturen auf anorganischen nichtleitern |
JP2660243B2 (ja) * | 1985-08-08 | 1997-10-08 | 株式会社半導体エネルギー研究所 | 半導体装置作製方法 |
US4729341A (en) * | 1985-09-18 | 1988-03-08 | Energy Conversion Devices, Inc. | Method and apparatus for making electrophotographic devices |
US4818564A (en) * | 1985-10-23 | 1989-04-04 | Canon Kabushiki Kaisha | Method for forming deposited film |
US4837048A (en) * | 1985-10-24 | 1989-06-06 | Canon Kabushiki Kaisha | Method for forming a deposited film |
JPH0647727B2 (ja) * | 1985-12-24 | 1994-06-22 | キヤノン株式会社 | 堆積膜形成法 |
JPH0651906B2 (ja) * | 1985-12-25 | 1994-07-06 | キヤノン株式会社 | 堆積膜形成法 |
JPH0647730B2 (ja) * | 1985-12-25 | 1994-06-22 | キヤノン株式会社 | 堆積膜形成法 |
JPH084071B2 (ja) * | 1985-12-28 | 1996-01-17 | キヤノン株式会社 | 堆積膜形成法 |
JPH084072B2 (ja) * | 1986-01-14 | 1996-01-17 | キヤノン株式会社 | 堆積膜形成法 |
JP2636215B2 (ja) * | 1986-01-31 | 1997-07-30 | キヤノン株式会社 | 堆積膜形成装置 |
DE3622614A1 (de) * | 1986-07-05 | 1988-01-14 | Philips Patentverwaltung | Verfahren zur herstellung von elektrisch leitenden formkoerpern durch plasmaaktivierte chemische abscheidung aus der gasphase |
DE3742110C2 (de) * | 1986-12-12 | 1996-02-22 | Canon Kk | Verfahren zur Bildung funktioneller aufgedampfter Filme durch ein chemisches Mikrowellen-Plasma-Aufdampfverfahren |
US5138973A (en) * | 1987-07-16 | 1992-08-18 | Texas Instruments Incorporated | Wafer processing apparatus having independently controllable energy sources |
DE3873846T2 (de) * | 1987-07-16 | 1993-03-04 | Texas Instruments Inc | Behandlungsapparat und verfahren. |
US4893584A (en) * | 1988-03-29 | 1990-01-16 | Energy Conversion Devices, Inc. | Large area microwave plasma apparatus |
US5129359A (en) * | 1988-11-15 | 1992-07-14 | Canon Kabushiki Kaisha | Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate |
DE69030140T2 (de) * | 1989-06-28 | 1997-09-04 | Canon Kk | Verfahren und Anordnung zur kontinuierlichen Bildung einer durch Mikrowellen-Plasma-CVD niedergeschlagenen grossflächigen Dünnschicht |
US5502315A (en) * | 1989-09-07 | 1996-03-26 | Quicklogic Corporation | Electrically programmable interconnect structure having a PECVD amorphous silicon element |
US5989943A (en) * | 1989-09-07 | 1999-11-23 | Quicklogic Corporation | Method for fabrication of programmable interconnect structure |
US5214002A (en) * | 1989-10-25 | 1993-05-25 | Agency Of Industrial Science And Technology | Process for depositing a thermal CVD film of Si or Ge using a hydrogen post-treatment step and an optional hydrogen pre-treatment step |
JP3099957B2 (ja) * | 1990-01-17 | 2000-10-16 | 株式会社リコー | 光導電部材 |
JP2714247B2 (ja) * | 1990-10-29 | 1998-02-16 | キヤノン株式会社 | マイクロ波プラズマcvd法による大面積の機能性堆積膜を連続的に形成する方法及び装置 |
JP2824808B2 (ja) * | 1990-11-16 | 1998-11-18 | キヤノン株式会社 | マイクロ波プラズマcvd法による大面積の機能性堆積膜を連続的に形成する装置 |
US5629054A (en) * | 1990-11-20 | 1997-05-13 | Canon Kabushiki Kaisha | Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method |
JP2810532B2 (ja) * | 1990-11-29 | 1998-10-15 | キヤノン株式会社 | 堆積膜形成方法及び堆積膜形成装置 |
JP3101330B2 (ja) * | 1991-01-23 | 2000-10-23 | キヤノン株式会社 | マイクロ波プラズマcvd法による大面積の機能性堆積膜を連続的に形成する方法及び装置 |
US5637537A (en) * | 1991-06-27 | 1997-06-10 | United Solar Systems Corporation | Method of severing a thin film semiconductor device |
EP0611331B1 (en) * | 1991-11-05 | 1997-06-11 | Research Triangle Institute | Chemical vapor deposition of diamond films using water-based plasma discharges |
US5204272A (en) * | 1991-12-13 | 1993-04-20 | United Solar Systems Corporation | Semiconductor device and microwave process for its manufacture |
US5231048A (en) * | 1991-12-23 | 1993-07-27 | United Solar Systems Corporation | Microwave energized deposition process wherein the deposition is carried out at a pressure less than the pressure of the minimum point on the deposition system's paschen curve |
US5256576A (en) * | 1992-02-14 | 1993-10-26 | United Solar Systems Corporation | Method of making pin junction semiconductor device with RF deposited intrinsic buffer layer |
US5298086A (en) * | 1992-05-15 | 1994-03-29 | United Solar Systems Corporation | Method for the manufacture of improved efficiency tandem photovoltaic device and device manufactured thereby |
US5476798A (en) * | 1992-06-29 | 1995-12-19 | United Solar Systems Corporation | Plasma deposition process with substrate temperature control |
WO1994000869A1 (en) * | 1992-06-29 | 1994-01-06 | United Solar Systems Corporation | Microwave energized deposition process with substrate temperature control |
US5670224A (en) * | 1992-11-13 | 1997-09-23 | Energy Conversion Devices, Inc. | Modified silicon oxide barrier coatings produced by microwave CVD deposition on polymeric substrates |
US5334423A (en) * | 1993-01-28 | 1994-08-02 | United Solar Systems Corp. | Microwave energized process for the preparation of high quality semiconductor material |
US6255718B1 (en) | 1995-02-28 | 2001-07-03 | Chip Express Corporation | Laser ablateable material |
IL112826A (en) * | 1995-02-28 | 1998-09-24 | Chip Express Israel Ltd | Method for settling a deposited plasma polymer layer |
US6273955B1 (en) | 1995-08-28 | 2001-08-14 | Canon Kabushiki Kaisha | Film forming apparatus |
US6096389A (en) * | 1995-09-14 | 2000-08-01 | Canon Kabushiki Kaisha | Method and apparatus for forming a deposited film using a microwave CVD process |
US6667240B2 (en) | 2000-03-09 | 2003-12-23 | Canon Kabushiki Kaisha | Method and apparatus for forming deposited film |
US6610362B1 (en) | 2000-11-20 | 2003-08-26 | Intel Corporation | Method of forming a carbon doped oxide layer on a substrate |
US6951804B2 (en) * | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
US7396415B2 (en) * | 2005-06-02 | 2008-07-08 | Asm America, Inc. | Apparatus and methods for isolating chemical vapor reactions at a substrate surface |
US7789965B2 (en) * | 2006-09-19 | 2010-09-07 | Asm Japan K.K. | Method of cleaning UV irradiation chamber |
US20080241387A1 (en) * | 2007-03-29 | 2008-10-02 | Asm International N.V. | Atomic layer deposition reactor |
US20080289650A1 (en) * | 2007-05-24 | 2008-11-27 | Asm America, Inc. | Low-temperature cleaning of native oxide |
US7871937B2 (en) | 2008-05-16 | 2011-01-18 | Asm America, Inc. | Process and apparatus for treating wafers |
US20100266765A1 (en) * | 2009-04-21 | 2010-10-21 | White Carl L | Method and apparatus for growing a thin film onto a substrate |
US8101245B1 (en) | 2010-08-12 | 2012-01-24 | Ovshinsky Innovation, Llc | Plasma deposition of amorphous semiconductors at microwave frequencies |
US8048782B1 (en) | 2010-08-12 | 2011-11-01 | Ovshinsky Innovation Llc | Plasma deposition of amorphous semiconductors at microwave frequencies |
US8222125B2 (en) | 2010-08-12 | 2012-07-17 | Ovshinsky Innovation, Llc | Plasma deposition of amorphous semiconductors at microwave frequencies |
US8592060B2 (en) | 2010-12-21 | 2013-11-26 | HGST Netherlands B.V. | Perpendicular magnetic recording media having low medium noise and systems using the same |
US9299557B2 (en) | 2014-03-19 | 2016-03-29 | Asm Ip Holding B.V. | Plasma pre-clean module and process |
US9474163B2 (en) | 2014-12-30 | 2016-10-18 | Asm Ip Holding B.V. | Germanium oxide pre-clean module and process |
US10373850B2 (en) | 2015-03-11 | 2019-08-06 | Asm Ip Holding B.V. | Pre-clean chamber and process with substrate tray for changing substrate temperature |
CN105244251B (zh) * | 2015-11-03 | 2017-11-17 | 长飞光纤光缆股份有限公司 | 一种大功率等离子体微波谐振腔 |
CN105502918B (zh) * | 2015-12-25 | 2019-01-25 | 长飞光纤光缆股份有限公司 | 一种双腔型等离子体微波谐振腔 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE466622A (ja) * | 1943-01-14 | |||
US4058638A (en) * | 1974-12-19 | 1977-11-15 | Texas Instruments Incorporated | Method of optical thin film coating |
US4066037A (en) * | 1975-12-17 | 1978-01-03 | Lfe Corportion | Apparatus for depositing dielectric films using a glow discharge |
US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
GB2033355B (en) * | 1978-09-07 | 1982-05-06 | Standard Telephones Cables Ltd | Semiconductor processing |
JPS55151329A (en) * | 1979-05-14 | 1980-11-25 | Shunpei Yamazaki | Fabricating method of semiconductor device |
US4282267A (en) * | 1979-09-20 | 1981-08-04 | Western Electric Co., Inc. | Methods and apparatus for generating plasmas |
US4363828A (en) * | 1979-12-12 | 1982-12-14 | International Business Machines Corp. | Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas |
US4410558A (en) * | 1980-05-19 | 1983-10-18 | Energy Conversion Devices, Inc. | Continuous amorphous solar cell production system |
-
1982
- 1982-09-24 US US06/423,424 patent/US4517223A/en not_active Expired - Lifetime
-
1983
- 1983-09-20 IL IL69773A patent/IL69773A/xx unknown
- 1983-09-21 EG EG577/83A patent/EG15981A/xx active
- 1983-09-22 JP JP58176099A patent/JPS5978528A/ja active Granted
- 1983-09-22 AU AU19383/83A patent/AU560168B2/en not_active Ceased
- 1983-09-23 EP EP83305679A patent/EP0104907B1/en not_active Expired
- 1983-09-23 EP EP85111232A patent/EP0175223A1/en not_active Withdrawn
- 1983-09-23 CA CA000437438A patent/CA1219240A/en not_active Expired
- 1983-09-23 IE IE2238/83A patent/IE54688B1/en not_active IP Right Cessation
- 1983-09-23 DE DE8383305679T patent/DE3371543D1/de not_active Expired
- 1983-09-23 BR BR8305222A patent/BR8305222A/pt not_active IP Right Cessation
- 1983-09-23 AT AT83305679T patent/ATE27186T1/de not_active IP Right Cessation
- 1983-09-23 PH PH29583A patent/PH20277A/en unknown
- 1983-09-23 ZA ZA837086A patent/ZA837086B/xx unknown
- 1983-09-23 ES ES525911A patent/ES525911A0/es active Granted
- 1983-09-24 IN IN1169/CAL/83A patent/IN161892B/en unknown
- 1983-09-24 KR KR1019830004481A patent/KR910005370B1/ko not_active IP Right Cessation
-
1984
- 1984-05-16 ES ES532535A patent/ES532535A0/es active Granted
-
1989
- 1989-04-18 JP JP1098620A patent/JPH0234911A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
ATE27186T1 (de) | 1987-05-15 |
JPS5978528A (ja) | 1984-05-07 |
CA1219240A (en) | 1987-03-17 |
AU1938383A (en) | 1984-03-29 |
BR8305222A (pt) | 1984-05-02 |
ES8503892A1 (es) | 1985-03-01 |
ES8503453A1 (es) | 1985-02-16 |
US4517223A (en) | 1985-05-14 |
EP0175223A1 (en) | 1986-03-26 |
IE54688B1 (en) | 1990-01-03 |
ES525911A0 (es) | 1985-02-16 |
EP0104907A2 (en) | 1984-04-04 |
AU560168B2 (en) | 1987-04-02 |
DE3371543D1 (en) | 1987-06-19 |
EG15981A (en) | 1987-10-30 |
IL69773A (en) | 1986-07-31 |
EP0104907A3 (en) | 1984-07-25 |
JPH0234911A (ja) | 1990-02-05 |
IN161892B (ja) | 1988-02-20 |
KR840005915A (ko) | 1984-11-19 |
EP0104907B1 (en) | 1987-05-13 |
IE832238L (en) | 1984-03-24 |
ES532535A0 (es) | 1985-03-01 |
JPH0419703B2 (ja) | 1992-03-31 |
KR910005370B1 (ko) | 1991-07-29 |
PH20277A (en) | 1986-11-14 |
IL69773A0 (en) | 1983-12-30 |
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